Internal supply voltage generating circuit in semiconductor integrated circuit
专利汇可以提供Internal supply voltage generating circuit in semiconductor integrated circuit专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable to reduce the power consumption and the output impedance in a semiconductor integrated circuit by a method wherein the cascade connecting point of the N-channel MOS transistor (Tr) and the P-channel MOS transistor (Tr) is used as the internal power output terminal.
CONSTITUTION: In the initial state, the reference potential of 1/2 VCC is generated in the node 7 of a reference potential generating circuit 8 while current runs slightly on an N-channel MOS Tr 10 and a node 11 is stabilized at a potential of 1/2 VCC+VTH (The VTH is the threshold voltage of the MOS Tr.). Similarly, current runs slightly on a P-channel MOS Tr 13, a node 15 is stabilized at a potential of 1/2VCC-VTH, and both potentials thereof are respectively impressed on the respective gates of an N-channel MOS Tr 17 and a P-channel MOS Tr 19, whereby the transistors 17 and 19 make a pentode operation. As a result, the current to flow from a power potential point 1 to the earth potential point through the transistor 17 and a transistor 18 is reduced to zero because the transistors 17 and 18 are in a critical condition between a conducted state and a non-conducted state. Moreover, the current in the transistors 11 and 13 is also reduced to zero, resistors 5 and 6 are in a high-resistance state and the current therein is slight.
COPYRIGHT: (C)1986,JPO&Japio，下面是Internal supply voltage generating circuit in semiconductor integrated circuit专利的具体信息内容。
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6 电池单元
