BACKGROUND OF THE INVENTION

&null;0002&null; 1. Field of the Invention

&null;0003&null; The present invention relates to plasma assisted chemical processing and, in particular to the use of non-thermal capillary discharge plasma (NT-CDP) or a non-thermal slot discharge plasma (NT-SDP) (collectively referred to as &null;NT-CDP/SDP&null;) to energize specific chemical species in a more homogeneous manner than traditional discharge technologies (e.g., Arc, gliding Arc, Dielectric Barrier Discharge (DBD) and Corona) allowing for higher yield and greater energy efficient chemical conversion. Unlike traditional discharge technologies which tend to create filamentary discharges that are spatially and temporally inhomogeneous a NT-CDP/SDP device generates a diffuse stable plasma with a minimum of volume inefficiencies to help insure equivalent treatment. The NT-CDP/SDP device can also be specifically tuned to selectively initiate certain rate determining chemical reactions, which readily cascade toward the desired product. Adding energy to the system in this specific manner enables chemical reactions to take place under ambient conditions that ordinarily would only be possible at higher temperatures and pressures. Tuning is accomplished by varying: the power, reactant composition and concentration, carrier gas composition and flow rate, temperature, pressure and/or reactor geometry.

&null;0004&null; 2. Description of Related Art

&null;0005&null; The use of an electrical discharge to initiate chemical reactions of industrial importance has been known and used for a long time. One of the oldest and most efficient chemical transformations that occur in the presence of an electrical discharge is the generation of ozone. The generated ozone may be reacted with unsaturated hydrocarbons to synthesize ozonides, aldehydes, and ketones. Typical early gas discharge devices operate by exposing different reactant gases to an electrical Arc (thermal plasma), as described by Knight, Henry de Boyne, The arc discharge, its application to power control, London, Chapman & Hall (1960).

&null;0006&null; Recent advances have made use of both thermal and non-thermal plasma in chemical processing. U.S. Pat. No.6,372,192 to Paulauskas et al. describes a process for carbon fiber manufacturing using plasma. In this patented process, stabilized polyacrylonitrile (PAN) fiber, the first step in carbon fiber processing, is converted to carbon graphite fiber using GHz frequency plasma in a low-pressure oxygen free atmosphere. This patent, however, does not disclose or suggest using oxygen rich plasma to stabilize PAN fibers in the initial step of the process. Does this patent teach the use of non-thermal plasma&null;

&null;0007&null; Research and development in the field of plasma assisted fuel reforming and fuel conversion has also made significant progress in recent years, due predominantly to renewed interest in hydrogen fuel cells. For instance, U.S. Pat. No. 6,322,757 to Cohn et al. and the references cited therein disclose a plasma fuel converter such as a plasmatron to reform hydrocarbons to produce a hydrogen rich gas. U.S. Pat. No. 6,395,197 to Detering et al. describes a high temperature apparatus and method for the thermal conversion of light hydrocarbons (natural gas) to desired end products, particularly diatomic hydrogen and elemental carbon. Yet another patented invention, U.S. Pat. No. 6,375,832 to Eliasson et al., teaches a method for the chemical transformation of a hydrogen (such as methane) and carbon (such as carbon dioxide) rich gas into a normally liquid fuel. This plasma assisted Fischer-Tropsch synthesis is conducted by using a dielectric barrier discharge in conjunction with a solid zeolite catalyst.

&null;0008&null; Another area of plasma processing that has received significant attention is plasma activated surface treatment of polymeric materials to increase wetability and/or surface adhesion, for example, as described in the publication by L. A. Rosenthal and D. A. Davis entitled &null;Electrical Characterization of a Corona Discharge for Surface Treatment&null;, IEEE Transaction on Industry Applications, vol. 1A-11 No. 3, pp. 328-335 (May/June 1975), the publication by S. Han, Y. Lee, H. Kim, G. Kim, J. Lee, J. Yoon, G. Kim, entitled &null;Polymer Surface Modification by Plasma Source Ion Implantation&null;, Surfaces & Coatings Technology, vol. 93, pp. 261-264 (1997), and U.S. Pat. No. 6,399,159 to Grace et al.

&null;0009&null; It is therefore desirable to optimize chemical processing through the use of a NT-CDP/SDP, as described in U.S. patent Ser. Nos. 09/738,923, filed on Dec. 15, 2000 and 60/358,340, filed on Feb. 19, 2002, each of which are hereby incorporated by reference in their entirety.

SUMMARY OF THE INVENTION

&null;0010&null; The present invention is directed to a method for enhancing chemical processing. Specifically, the present invention relates to a method for activating chemical reactions using a NT-CDP/SDP unit. The NT-CDP/SDP unit in accordance with the present invention includes a first electrode disposed between two dielectric layers, wherein the first electrode and dielectric layers having at least one opening (e.g., capillary or a slot) defined therethrough. At least one second electrode (e.g., in the shape of a pin, ring, metal wire, or tapered metal blade) is disposed in fluid communication with an associated opening. A non-thermal plasma discharge is emitted from the opening when a voltage differential is applied between the first and second electrodes. Chemical feedstock to be treated is then exposed to the non-thermal plasma. This processing is suited for the following exemplary chemical reactions as (i) partial oxidation of hydrocarbon feedstock to produce functionalized organic compounds; (ii) chemical stabilization of a polymer fiber (e.g., PAN fiber precursor in carbon fiber production); (iii) pre-reforming of higher chain length petroleum hydrocarbons to generate a feedstock suitable for reforming; (iv) natural gas reforming in a chemically reducing atmosphere (e.g., ammonia or urea) to produce carbon monoxide and Hydrogen gas; or (v) plasma enhanced water gas shifting.

BRIEF DESCRIPTION OF THE DRAWINGS

&null;0011&null; The foregoing and other features of the present invention will be more readily apparent from the following detailed description and drawings of illustrative embodiments of the invention wherein like reference numbers refer to similar elements throughout the similar views and in which:

&null;0012&null; FIG. 1a is a side perspective view of an exemplary annular NT-CDP treatment device for the chemical stabilization (oxidation) of a PAN fiber in accordance with the present invention;

&null;0013&null; FIG. 1b is a cross-sectional lateral view perpendicular to the longitudinal axis of the device of FIG. 1a;

&null;0014&null; FIG. 1c is an expanded cross-sectional longitudinal view of a single capillary ring electrode in the device of FIG 1b;

&null;0015&null; FIG. 2a is a cross-sectional view of an exemplary gas phase NT-CDP assisted chemical processing unit in accordance with the present invention;

&null;0016&null; FIG. 2b is an enlarged view of a single capillary of the device of FIG. 2a;

&null;0017&null; FIG. 3a is an exemplary graphical representation of time versus hydrogen detector reading for the formation of H2 from NH3;

&null;0018&null; FIG. 3b is an exemplary graphical representation of time versus hydrogen gas concentration;

&null;0019&null; FIG. 4a is a side perspective view of an exemplary annular NT-SDP treatment device for the chemical stabilization (oxidation) of a PAN fiber in accordance with the present invention;

&null;0020&null; FIG. 4b is a cross-sectional lateral view perpendicular to the longitudinal axis of the device of FIG. 4a; and

&null;0021&null; FIG. 4c is an expanded cross-sectional longitudinal view of a single longitudinal wire electrode in the device of FIG. 4b.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

&null;0022&null; The present invention is directed to a method for activating (catalyzing) chemical reactions. A chemical feedstock exposed to the electrical discharge provided in the plasma volume may improve the yield and/or energy efficiency of a specific chemical transition.

&null;0023&null; Gaseous, liquid, aqueous and/or solid precursors can be treated. Some illustrative types of exemplary chemical reactions that are enhanced when exposed to the NT-CDP/SDP are provided below, wherein each process is accompanied by a specific exemplary reaction:

&null;0024&null; (i) Partial oxidation of hydrocarbon feedstock to produce functionalized organic compounds, such as alcohols, aldehydes, ketones and carboxcylic acids.

Example

&null;0025&null;

1

&null;0026&null; (ii) Chemical stabilization &null;oxidation&null; of PAN precursor in route to carbon fiber production.

Example

&null;0027&null;

2

&null;0028&null; (iii) Pre-reforming (&null;cracking&null;) of higher chain length petroleum hydrocarbons in order to generate a feedstock suitable for reforming.

Example

&null;0029&null;

3

&null;0030&null; (iv) Natural gas reforming in a chemically reducing (ammonia or urea) atmosphere to produce carbon monoxide and Hydrogen gas.

Example

&null;0031&null;

4

&null;0032&null; ;and

&null;0033&null; (v) Plasma enhanced water gas shift reaction.

Example

&null;0034&null;

5

&null;0035&null; In processes (i) and (ii) described above, non-thermal partial oxidation (&null;cold combustion&null;) of hydrocarbon feedstock is activated using NT-CDP/NT-SDP. The plasma generates the following oxidizing species from ambient air: oxygen atoms (O (1D)), hydroxyl radicals (OH), ozone (O3) and peroxide radicals (HO2) into the gas stream. These highly reactive species then selectively oxidize hydrocarbon molecules to produce the desired product from the reaction. In the case of example (i) the desired outcome is CH3(CH2)nCH2OH.

&null;0036&null; The reaction described in (iii) above is preferably conducted in a chemically neutral plasma. The term &null;chemically neutral&null; refers to environments that have carrier gases that are chemically inert such as (but not limited to) Helium and is the result of direct electron impact dissociation. Process iv) and v), described above, occur preferentially in a chemically reducing plasma, that is a plasma that tends to increase the number of electrons to the target chemicals. (Reduction is the opposite to that of oxidation.) Ammonia or urea may be added to the gas stream to produce an electron rich plasma suitable to enhance the chemical reduction of the hydrogen in methane (process (i)) and water (process (ii)) to hydrogen gas.

&null;0037&null; FIGS. 1a-1c show different views of an exemplary annular NT-CDP processing unit that is particularly well suited for the chemical stabilization (oxidation) of polymer fibers such as PAN fibers. The processing unit includes a secondary electrode 2 disposed between two insulating dielectric layers 8, 9 to form a hollow tube. The secondary electrode 2 is selected to have a desired expansion coefficient. Although the processing unit is shown and described as being cylindrical in shape alternative geometric shapes are contemplated and within the scope of the invention. A high voltage bus 5, for example, a wire mesh or an outer metallic sheath, is disposed about the outer dielectric layer 9.

&null;0038&null; FIG. 1b is a cross-sectional lateral view perpendicular to the longitudinal axis of the processing unit of FIG. 1a. As is clearly shown in FIG. 1b, a plurality of capillaries 4 are preferably defined radially outward through the dielectric layer 8, secondary electrode 2 and opposite dielectric layer 9. A dielectric sleeve 3 made, for example, from quartz, is inserted into each capillary 4 and a pin electrode 1 is embedded in each dielectric sleeve 3 so as to insulate the pin electrode 1 from the secondary electrode 2. The high voltage bus 5 connects the array of pin electrodes 1 to a common high voltage source (HV). In an alternative configuration, the electrode may have a different geometric shape and need not necessarily be embedded in the capillary so long as the electrode is in fluid communication with the capillary. Some alternative configurations of the capillary discharge arrangement are shown and described in U.S. patent application Ser. No. 09/738,923. FIG. 1c is an expanded view of a single capillary shown in FIG. 1b.

&null;0039&null; In operation, the PAN fiber 6 is received though the channel of the tube and subjected to the NT-CDP generation. While in the processing unit 10 the PAN fiber 6 is subject to the NT-CD plasma discharge and what emerges from the opposite end is a stabilized PAN fiber 7.

&null;0040&null; FIGS. 2a and 2b show two views of an NT-CDP gas phase chemical processing unit in accordance with the present invention. Referring to the cross-sectional view in FIG. 2a, a series of capillaries 20 are defined through a dielectric sheet 11. A dielectric sleeve 12 is inserted into each capillary 20 to form a high dielectric current limiting capillary. Embedded in each capillary 20 is a pin or needle electrode 10. Electrically connecting the array of pin or needle electrodes 10 to a common high voltage source is a high voltage bus 13 such as a wire mesh or metallic sheath. A dielectric plate 14 made, for example, from quartz, glass or ceramic, is used to insulate the electrode plate 15. The entrance and exit transitions 16,17, respectively, allow the gas to be processed to pass substantially transverse to the array of capillary plasma jets with the reactor volume 21. A sealed manifold 18 permits gaseous chemical reagents to be ejected into the process stream after passing directly through the plasma jet via the needle electrode 10 and capillary 20. Element 19 is an auxiliary reagent gas entry port. In a preferred embodiment, the system may be readily scaled from a range of approximately 500 watts through approximately 10 KW of plasma power. The processing unit is preferably optimized to use a Radio Frequency power supply. The peak-to-peak voltage required across the reactor gap preferably ranges from approximately 5 KV to approximately 50 KV, depending on the carrier gas.

&null;0041&null; FIGS. 3a and 3b are experimental graphical results for NT-CDP assisted hydrogen formation from iso-octane and ammonia vapors in nitrogen carrier gas. The discharge was initiated after a 300 second equilibration time to insure a steady state reduction. Specifically, FIG. 3a shows a graphical representation of time versus hydrogen detector reading (mA) during an experiment of the formation of H2 from NH3. The experiment was conducted at a power of 200W, a concentration of 15M of NH4OH and at a flow rate of 11L/min N2. FIG. 3b depicts the graphical results of time versus H2 gas concentration in ppm. This experiment was performed at a power of 2000W, a concentration of 15M of NH3(aq)OH and at a flow rate of 11L/min N2

&null;0042&null; These experimental results establish that little, if any, interference is present due solely to plasma (N2 trace) and only a minimum amount of hydrogen formation from iso-octane reforming in chemically neutral plasma (iso-octane trace) when using the NT-CDP configuration in accordance with the present invention. The ammonia trace, shows a significant amount (&null;1000 ppmV) of hydrogen formation due to the auto-catalytic disproportionation of ammonia. The largest amount of hydrogen (&null;1500 ppmV) was produced by the synergic effect found when iso-octane is used in the presence of ammonia. GC/MS analysis of the product stream also shows a significant amount of plasma assisted pre-reforming (cracking) in conjunction with this hydrogen formation. These results when optimized may provide a cost effective method of generating hydrogen gas from condensed fuels.

&null;0043&null; The NT-CDP chemical processing methods in accordance with the present invention are advantageous over conventional thermal and/or catalytic methods in that they significantly lower power consumption and minimizes the depletion of the catalyst over time. The lower power consumption is due to the fact that the bulk gas does not have to be heated in order for the conversion to occur. In addition, NT-CDP chemical processing is also favorable compared with other plasma processes, such as dielectric barrier discharge (DBD) and corona discharge (CD). The reason being that a relatively large volume of diffuse plasma that is realized using NT-CDP allows for substantially homogeneous and efficient chemical processing. The chemical processes disclosed are for illustrative purposes only and are not meant in any way to limit the scope of the present invention to other chemical processing applications.

&null;0044&null; FIGS. 4a through 4c show an exemplary embodiment of an NT-SDP gas phase chemical processing unit in accordance with the present invention. This embodiment is similar to that shown and described with respect to FIGS. 2a through 2c with the exception that the unit employs a slot discharge configuration instead of a capillary discharge arrangement. The slot discharge configuration in FIGS. 4a-4c is particularly well suited for chemical stabilization of polymer fibers such as PAN fibers. The same reference element numbers denote the same reference elements described with respect to the unit shown in FIGS. 2a-2c. Slots 4 are shown in FIG. 4a as being arranged substantially parallel to the longitudinal axis. Alternatively, the slots 4 may be disposed in a spiral direction or substantially perpendicular to the longitudinal axis of the reactor. An electrode 4 is inserted in each slot. By way of example, the electrode 4 may be a metallic wire arranged to complement the shape of the associated slot and partially inserted, embedded or proximate the slot. In yet another embodiment, the slot may be a tapered blade. Alternative configurations for the slot discharge configuration are described in U.S. patent application Ser. No. 60/358,340, which is hereby incorporated by reference in its entirety. This slot discharge configuration exposes a wider surface area of plasma emissions than that of a capillary discharge configuration.

&null;0045&null; Thus, while there have been shown, described, and pointed out fundamental novel features of the invention as applied to a preferred embodiment thereof, it will be understood that various omissions, substitutions, and changes in the form and details of the devices illustrated, and in their operation, may be made by those skilled in the art without departing from the spirit and scope of the invention. For example, it is expressly intended that all combinations of those elements and/or steps which perform substantially the same function, in substantially the same way, to achieve the same results are within the scope of the invention. Substitutions of elements from one described embodiment to another are also fully intended and contemplated. It is also to be understood that the drawings are not necessarily drawn to scale, but that they are merely conceptual in nature. It is the intention, therefore, to be limited only as indicated by the scope of the claims appended hereto.

&null;0046&null; All of the references, publications and patents referred to herein are each incorporated by reference in their entirety.