BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light-receiving member, an image forming apparatus having the member, and an image forming method utilizing the member, and more particularly to a light-receiving member with excellent characteristics free from causing drawbacks such as a faint image or a smeared image regardless of the ambient conditions and without heating the light-receiving member, and capable of maintaining such characteristics, also an image forming apparatus having such light-receiving member and an image forming method utilizing such light-receiving member.

2. Related Background Art

For the element member employed for a light-receiving member such as an electrophotographic photosensitive member, there have been proposed various materials such as selenium, cadmium sulfide, zinc oxide, phthalocyanine, amorphous silicon (hereinafter abbreviated as a-Si), etc. Among these materials, non-single-crystal deposited films containing silicon atoms as the main component, as represented by a-Si, for example amorphous deposited films such as a-Si compensated with hydrogen and/or halogen (for example fluorine or chlorine), have been proposed as the photosensitive member of high performance, high durability and no ecological problem, and some deposited films have been practically used. U.S. Pat. No. 4,265,991 discloses an electrophotographic photosensitive member of which a photoconductive layer is mainly composed of a-Si.

The a-Si photosensitive member has a high surface hardness, a high sensitivity to the light of long wavelength region such as of a semiconductor laser (770 nm to 800 nm) and exhibits little deterioration even after repeated use, and is widely employed as the electrophotographic photosensitive member for high-speed copying machines and laser beam printers (LBP).

For forming such deposited films, there have been known various methods such as sputtering, thermal CVD, photo CVD, plasma CVD, etc. Among these methods, the plasma CVD in which a raw material gas is decomposed by glow discharge caused by a DC current, a high frequency (RF, VHF) or a microwave to form a thin deposited film on a substrate such as glass, quartz, a heat-resistant plastic film, stainless steel or aluminum has been particularly advanced, for example, for the formation of an amorphous silicon deposited film for practical use in electrophotography, and various apparatus have also been proposed for executing such formation.

Also in recent years, there have been made various considerations for meeting the increasing demands for an improved film quality and for a higher throughput.

In particular, the plasma process utilizing the high frequency power has been adopted because of various advantages such as stability of discharge and applicability in the formation of insulating films such as an oxide film and a nitride film. Also recently a report on the plasma CVD method employing a high frequency power source of 50 MHz or higher in a plasma CVD apparatus with parallel flat electrodes (Plasma Chemistry and Plasma Processing, Vol. 7, No. 3 (1987), pp. 267-373) has shown a possibility of improving the deposition rate, without deteriorating the properties of the deposited film, by elevating the discharge frequency beyond the conventionally employed frequency of 13.56 MHz. Such elevation in the discharge frequency has also been tried in sputtering processes and is being investigated widely.

In applying the a-Si photosensitive member, produced by such methods, to an image forming apparatus employing so-called electrophotographic technology, a corona charger (corotron or scorotron) is mostly employed as the charging and charge eliminating means for the photosensitive member. Such corona discharge generates ozone (O

3

) which oxidizes nitrogen in the air to generate corona discharge products such as nitrogen oxides (NO

x

), and thus generated nitrogen oxides etc. react with the moisture in the air to generate nitric acid or the like. Such corona discharge products, for example nitrogen oxides and nitric acid, are deposited on the photosensitive member and surrounding devices and contaminate the surfaces thereof. As the corona discharge products exhibit a low electrical resistance by moisture absorption, the charge retaining ability is substantially lowered over the entire area or in local areas, leading to image defects such as a faint image or a smeared image (due to deformation or no formation of the electrostatic latent image by the charge on the photosensitive member leaking along the surface thereof).

Also the corona discharge products deposited on the internal surface of a shield plate of the corona charger evaporate and are liberated not only while the image forming apparatus is in operation but also while the apparatus is stopped—for example, during the night. The evaporated products deposit on the surface of the photosensitive member corresponding to the aperture of the corona charger and absorb moisture, whereby the surface of the photosensitive member is reduced in electrical resistance. For this reason, the first copy (output) or several copies at the initial stage when the apparatus is started after a pause tend to show a faint image or a smeared image in an area which is opposed to the aperture of the corona charger while the apparatus is stopped. Such image smear, appearing like the trace of the charger, is often called the charger trace smear. Such defect becomes conspicuous when the corona charger is an AC corona charger.

The faint image and the smeared image induced by the corona discharge products become more serious when the photosensitive member is an a-Si photosensitive member. In comparison with other photosensitive members, the a-Si photosensitive member tends to exhibit a lower efficiency of charging and charge elimination, so that the charging and the charge elimination by corona discharge to the a-Si photosensitive member are conducted with a higher voltage for applying to the charger in order to significantly increase the charging current in comparison with the cases of other photosensitive members. Since the amount of ozone generation is proportional to the corona charging current, a configuration employing an a-Si photosensitive member in combination with a corona charger particularly generates a large amount of ozone, thereby eventually enhancing the faint image and the smeared image resulting from the corona discharge products. Also in the case of the a-Si photosensitive member, due to the adverse effect of the very high surface hardness thereof, the corona discharge products deposited thereon tend to remain firmly for a long time.

For preventing such faint image or smeared image, there have been contemplated the following two methods.

The first method consists of reducing the relative humidity by heating (30° C. to 50° C.) the surface of the photosensitive member by use of a heater incorporated into the photosensitive member or by blowing warm air to the photosensitive member by use of a warm air blower. This method is capable of evaporating the corona discharge products and the moisture deposited on the surface of the photosensitive member, thereby substantially avoiding the reduction in resistance of the photosensitive member surface.

The second method consists of increasing the water repellent property of the surface of the photosensitive member, thereby rendering the deposition of the corona discharge products more difficult and thus preventing the smeared image. For example, the Japanese Patent Application Laid-Open No. 61-289354 discloses an a-C surface layer subjected to plasma treatment with a fluorine-containing gas. Also the Japanese Patent Application Laid-Open No. 60-12554 discloses an electrophotographic photosensitive member having a surface layer composed of an amorphous material containing carbon and halogen atoms, and a producing method therefor. Furthermore, the Japanese Patent Application Laid-Open No. 63-65447 discloses the technology on a fluorine-containing organic polymer film defined by the relationship of an absorption coefficient of infrared absorption spectra, though it is principally intended for use as a charge transporting layer and has not been explained for use as a surface layer.

However, though the first method can solve the drawback of smeared image by the use of a heating device for the photosensitive member, it is preferable not to heat the photosensitive member by such heating device as a drum heater, in consideration of the energy saving and the ecology.

Also, when the a-Si drum of high image quality is adopted in a full-color copying machine and the photosensitive member is thus heated, the possibility of melt-adhesion, i.e., melting of toners to attach to the surface of the photosensitive drum, becomes higher since color toners are low-melting. Furthermore, the image density may locally become higher or lower at the interval of rotation of the cylindrical developer. Such fluctuation in the image density is induced by the expansion of the developer by the heat of the photosensitive member while the apparatus is stopped, and then the distance of the photosensitive member from an opposed portion thereof is reduced, thereby facilitating the transfer of the developer in comparison with the ordinary state. From these facts, there has been desired a photosensitive member which can avoid the faint image or the smeared image without heating.

On the other hand, with respect to the second method utilizing the improvement of the water repellent property, the aforementioned patent application describes the improvement of the water repellent property in case of exposure to ozone, but does not describe whether a durability test by a copying operation using a large number of papers has been practically conducted. The present inventors conducted a confirming test according to the method disclosed in the Japanese Patent Application Laid-Open No. 61-289354 and it proved to be an improvement on the smeared image in the initial period, but still showed smeared image after a continuous copying operation using a large number of papers.

A confirming test was also conducted on the method disclosed in the Japanese Patent Application Laid-Open No. 60-12554.

In this test it was proved that the fluorine-containing amorphous film or the organic polymer film was superior in preventing the smeared image from the initial period in comparison with the conventional surface layers and maintained such performance even after a continuous copying test.

However since the surface layer which is softer than the conventional surface layer gradually abraded by friction with paper and components arranged around the photosensitive member, the surface layer is required to have a higher hardness in order to maintain the performance of the surface layer up to the number of copying papers which is required for the a-Si surface layer with the ordinary thickness. It was also found that when a larger thickness was made larger in consideration of such abrasion, drawbacks such as an increased retentive potential and a lowered sensitivity were generated.

A confirming test was furthermore conducted on the method disclosed in the Japanese Patent Application Laid-Open No. 63-65447. In this prior technology, the physical properties are defined by the values of infrared absorption spectrum, but such definition is given in consideration of the properties for the charge transporting layer, and it proved to be insufficient in specific resistivity and in hardness for use as a surface layer.

In consideration of the foregoing, there is desired a photosensitive member (light-receiving member) provided with a surface layer of highly water-repellent property enough for preventing the faint image and the smeared image without heating, in which the water-repellent property is not deteriorated for a prolonged period, even after a copying operation using a large number of papers.

Also there is desired a technology capable of realizing high image quality in stable manner, in order to meet the recent requirement for the improvement of the copy image quality, in addition to the requirement for solving the drawback of smeared image. More specifically, a higher sensitivity and a thinner structure are requested for the light-receiving member (electrophotographic photosensitive member), in order to meet the various requirements, such as a higher definition, a higher operating speed, introduction of digital technologies, compactization, a lower cost etc. for the image forming apparatus such as the copying machine and the printer.

For meeting such requirements, the surface layer for protecting the surface of the photosensitive member is required to have a lower loss for the incident light and a thinner structure, but a thinner structure is in fact not practical in the conventional material for the surface layer. For this reason there is desired a novel material for the surface layer, having a wide band gap for realizing a low loss to the incident light and a high breakdown voltage, and allowing to form a thin film.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a light-receiving member which can provide a high quality image without faint image or smeared image without employing heating means for the light-receiving member (photosensitive member) under any ambient condition, and which has high durability capable of maintaining such property.

Another object of the present invention is to provide a light-receiving member, without using the heating means, which can prevent the adhesion of low-melting toners such as color toners, and which also prevent the unevenness in the image density resulting at the rotating interval of the developer.

Still another object of the present invention is to provide a light-receiving member which is provided with a high sensitivity, is free from image defects resulting from the charge leaking, and is capable of providing a high quality image in stable manner, without time-dependent change.

Still another object of the present invention is to provide an image forming apparatus comprising a light-receiving member which meets the above-mentioned objects, and an image forming method utilizing such light-receiving member.

Still another object of the present invention is to provide an image forming apparatus which can provide a high quality image without using an additional structural component such as the heating means for the light-receiving member, thereby achieving a lower cost, a compacter size and a lower energy consumption.

Still another object of the present invention is to provide an image forming method capable of expanding the range of selection of the toners, e.g., enabling the use of low-melting toners, and capable of conducting more stable image development and realizing stable image forming cycle.

More specifically, the object of the present invention is to provide a light-receiving member comprising a photoconductive layer provided on an electroconductive substrate, and a surface layer provided on the photoconductive layer, the surface layer comprising non-single-crystal carbon containing at least fluorine, wherein the surface layer has a ratio of the area of a peak having the center in the vicinity of 1200 cm

−1

or 1120 cm

−1

in an infrared absorption spectrum to the area of a peak having the center in the vicinity of 2920 cm

−1

being in a range from 0.1 to 50.

Another object of the present invention is to provide an image forming apparatus comprising: a light-receiving member comprising a photoconductive layer provided on an electroconductive substrate, and a surface layer provided on the photoconductive layer, the surface layer comprising non-single-crystal carbon containing at least fluorine, wherein the surface layer has a ratio of the area of a peak having the center in the vicinity of 1200 cm

−1

or 1120 cm

−1

in an infrared absorption spectrum to the area of a peak having the center in the vicinity of 2920 cm

−1

is within a range from 0.1 to 50; and a charging unit, a developing unit and a cleaner provided in this order around the light-receiving member.

Still another object of the present invention is to provide an image forming method comprising the steps of: charging a light-receiving member comprising a photoconductive layer provided on an electroconductive substrate, and a surface layer provided on the photoconductive layer, the surface layer comprising non-single-crystal carbon containing at least fluorine, wherein the surface layer has a ratio of the area of a peak having the center in the vicinity of 1200 cm

−1

or 1120 cm

−1

in an infrared absorption spectrum to the area of a peak having the center in the vicinity of 2920 cm

−1

is within a range from 0.1 to 50; irradiating a desired area with light to form an electrostatic image; and forming a toner image on the light-receiving member corresponding to the electrostatic image.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B

are schematic cross-sectional views showing examples of the preferred layered configuration of the light-receiving member of the present invention;

FIGS. 2 and 3

are schematic cross-sectional views showing examples of the producing apparatus advantageously employed for the light-receiving member of the present invention;

FIG. 4

is a schematic cross-sectional view showing a preferred example of the image forming apparatus provided with the light-receiving member of the present invention; and

FIG. 5

is a schematic infrared absorption spectrum chart showing a preferred example of the method for determining the area ratio according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The above-mentioned configuration of the present invention has been reached from the following investigation.

At first, several kinds of non-single-crystal carbon films containing fluorine were prepared and investigated. (The non-single-crystal carbon film often called diamond-like carbon is neither graphite nor diamond and indicates amorphous carbon exhibiting an intermediate bonded state between graphite and diamond. It may also contain polycrystals or microcrystals instead of being completely amorphous.) As a result of intensive investigation, it was found that a non-single-crystal carbon film formed utilizing the areas of the absorption peaks obtained by the infrared absorption spectroscopy of the film as an index in such a manner that the ratio of areas of specified peaks was within a specified range, could simultaneously satisfy the durability of the water repellent property and the abrasion resistance of the film.

More specifically, the peaks having the center in the vicinity of 1200 cm

−1

and 1120 cm

−1

respectively indicate the elongating vibrations of CF

2

bond and CF bond, and these peaks have been found effective as an index indicating the difficulty of detachment of bonded fluorine, namely indicating the durability of the water repellent effect. On the other hand, the peak having the center in the vicinity of 2920 cm

−1

is an absorption band based on the elongating vibration of sp

3

-bonded CH or the asymmetrical elongating vibration of CH

2

, and has been found effective as an index indicating the hardness. It has also been found that a film formed in such a manner that a ratio of the area of the peak in the vicinity of 1200 cm

−1

or 1120 cm

−1

to the area of the peak in the vicinity of 2920 cm

−1

is within a range from 0.1 to 50, maintains the water repellent effect even after copying operation using a large number of papers and exhibits a slight amount of abrasion.

It was found that when the ratio of the peak area became less than 0.1, the film exhibited a higher hardness and became less abradable, but resulted in a lower durability of the water repellent effect, thus causing the smeared image after copying operation using a large number of papers. It was also found that when the ratio was higher than 50, the water repellent effect was improved but the film became easily abraded and becomes unable to satisfactorily maintain the function as the surface layer after copying operation using a large number of papers.

In the fluorine-containing non-single-crystal carbon film formed in the range of the present invention, the reason for the improved durability of the water repellent effect and for the reduced tendency of abrasion is not yet fully clarified but is estimated as follows.

The durability of the water repellent effect of such fluorine-containing non-single-crystal carbon film is not necessarily proportional to the absolute amount of fluorine. Thus the durability of the water repellent effect is more strongly influenced by a factor based on the strength of the fluorine bonds on a surface, than by the absolute amount of fluorine. The spectral peaks employed in the present invention indicate the elongating vibrations of CF

2

and CF bonds, and are considered to represent fluorine atoms which are incorporated in the network of the film and are bonded in a stable state. On the other hand, the fluorine atoms in other bonded states such as CF

3

at the terminal portion of a carbon skeleton, or interlattice F

2

or HF molecules, are considered to be relatively easily removed by abrasion, in comparison with fluorine atoms present in the skeleton such as —CF

2

—. Based on these facts, the water repellent effect is made durable even after copying operation using a large number of papers, in the fluorine-containing non-single-crystal carbon film in which the bonded state of fluorine is defined in the range of the present invention.

Also with respect to the film hardness, as it is also influenced significantly by the bonded state, the effect of the present invention is estimated to be derived from the film defined by the indexes obtained from the infrared absorption spectrum. More specifically, when fluorine atoms are introduced into the non-single-crystal carbon film, the film tends to become a polymer-like film instead of developing a three-dimensional network structure. It is therefore necessary to suppress the amount of fluorine atoms bonded in such positions as to hinder the development of the three-dimensional network, thereby avoiding the loss in strength of the skeleton. For this reason, the absorption peak resulting from a strong skeleton, namely indicating the elongating vibration of sp

3

-bonded CH, is assumed to have to be present above a certain level in order to maintain the hardness while incorporating fluorine atoms into the network in a stable state. It is therefore presumed, based on these facts, that the hardness and the durability of water repellent effect can be obtained at the same time only when the film is formed with a delicate balance of the peak in the vicinity of 2920 cm

−1

and that in the vicinity of 1200 cm

−1

or 1120 cm

−1

in the infrared absorption spectrum.

In addition, the present invention provides unexpected effects of minimizing a sensitivity loss due to the presence of the surface layer and further reducting in the thickness of the surface layer by the improved breakdown voltage of the film.

These two unexpected effects are presumed as follows. The fluorine-containing non-single-crystal carbon film of the present invention has proved to have a wider band gap in comparison with the conventional amorphous carbon (a-C) film. This is presumably because the C—F bond which is stronger than C—C or C—H bond widens the difference between the bonding energy and antibonding energy, thereby resulting in a widening of the optical band gap. Such widened band gap is presumed to reduce the sensitivity loss and to lead to an improved sensitivity, in comparison with the conventional a-C film, with respect the same thickness.

Also the fluorine-containing non-single-crystal carbon film in general has a low free energy of the film and therefore exhibits good wettability to the surface of the photosensitive member, thereby improving coverage. Further in the range of the present invention, the denseness of the film is significantly improved in addition to good coverage. Such high level of denseness is presumably based on the bonded state of fluorine atoms, but is not yet fully clarified. Good coverage allows to uniformly cover defects formed on the surface of a photoconductive layer, for example caused by spherical projections, and the high denseness prevents the movement of the charge around the defects. Therefore, the breakdown voltage of the film is improved and it is unlikely to generate white spots or the like which are caused by the charge leaking in the surface layer. The present invention has been reached through these investigations.

As described in the foregoing, the surface layer of the present invention is formed in such a manner that a ratio of the area of a peak having a center in the vicinity of 1200 cm

−1

or 1120 cm

−1

in the infrared absorption spectrum to the area of a peak having a center in the vicinity of 2920 cm

−1

is within a range from 0.1 to 50. Such configuration allows to effectively solve the above-described drawbacks.

The photoconductive layer on which the surface layer is to be provided preferably comprises a non-single-crystal material containing silicon as a matrix, and more preferably amorphous silicon containing hydrogen or halogen.

Also in the light-receiving member of the present invention, the non-single-crystal carbon surface layer preferably contains at least hydrogen.

Furthermore, according to the present invention, the surface layer is desirably formed by using a fluorine-substituted hydrocarbon gas as a part of raw material gases and by utilizing a plasuma obtain by the raw material gases, and such fluorine-substituted hydrocarbon gas is preferably a gas obtained by replacing all the hydrogen atoms of a hydrocarbon with fluorine atoms. A preferred example of the fluorine-substituted hydrocarbon gas is CF

4

gas.

Furthermore, the surface layer of the present invention is preferably formed by decomposing raw material gases by a plasma CVD method employing a high frequency of 1 to 450 MHz, more preferably 50 to 450 MHz.

Also between the photoconductive layer and the surface layer, there is desirably formed a buffer layer having an intermediate composition of these two layers.

In the following the present invention will be clarified further with reference to the attached drawings.

FIGS. 1A and 1B

are schematic cross-sectional views showing examples of the configuration of the light-receiving member of the present invention.

FIG. 1A

shows a photosensitive member called single layer type, in which the function of the photoconductive layer is not separated. The photosensitive member has a multilayered structure comprising a charge injection inhibiting layer

102

which is provided if necessary, a photoconductive layer

103

comprising a-Si containing at least hydrogen, and a surface layer

104

of non-single-crystal carbon containing at least fluorine stacked on a substrate

101

in this order.

FIG. 1B

shows a photosensitive member called function separation type, in which the photoconductive layer is separated in function into a charge generating layer and a charge transporting layer. It has a multilayered structure comprising a charge injection inhibiting layer

102

provided if necessary, a photoconductive a-Si layer

103

containing at least hydrogen which is separated in function into a charge transporting layer

105

and a charge generating layer

106

, and a surface layer

104

of non-single-crystal carbon containing at least fluorine stacked on a substrate

101

in the order. Either of the charge transporting layer

105

and the charge generating layer

106

may be positioned at the side of the substrate

101

, and the order of these layers may be suitably determined according to the desired characteristics and physical properties. Also, when the separation of the functions is achieved by a change in the composition, such change in the composition may be realized by continuous composition change and a single layer is divided into regions which each execute the respective functions. The change of the layer composition in the direction of thickness of the layer may be suitably designed according to the requirement regardless whether the layer is separated in functions or formed into a single layer or plural layers.

Thus, in the photosensitive members shown in

FIGS. 1A and 1B

, each layer may involve a continuous change in the composition and may lack distinct interfaces. Also the charge injection inhibiting layer

102

may be omitted if unnecessary. Furthermore, an intermediate layer may be provided between the photoconductive layer

103

and the surface layer

104

of non-single-crystal carbon, for example for improving the adhesion. The intermediate layer can be composed, for example, of SiC having an intermediate composition between the compositions of the photoconductive layer

103

and the surface layer

104

, but it may also be composed of SiO, SiN or the like. Also the intermediate layer may include continuous change in the composition.

The non-single-crystal carbon mentioned in this specification principally indicates, as explained in the foregoing, amorphous carbon having the intermediate property between graphite and diamond, but it may partially contain microcrystals or polycrystals. Such material can be formed for example by plasma CVD, sputtering or ion plating, but a film formed by plasma CVD exhibits a high transparency and a high hardness and is suitable for use as the surface layer of the light-receiving member such as the electrophotographic photosensitive member.

In the plasma CVD method for producing the non-single-crystal carbon film, there may be employed any discharge frequency as long as the desired plasma can be generated. Industrially there can be advantageously employed a high frequency of frequency band of 1 to 450 MHz, particularly a high frequency of the RF band of 13.56 MHz. Also use of a high frequency of the VHF band of 50 to 450 MHz is more preferable for the production of the surface layer, since both transparency and hardness of the surface layer can be made higher.

For obtaining the effect of the present invention, there can be employed any fluorinated gas that can generate active fluorine radicals by plasma formation, such as CF

4

, CHF

3

, CH

2

F

2

, CH

3

F, C

2

F

6

, C

2

F

4

or CH

2

CF

2

. Though some gasses can singly form a film, these gasses are preferably used, in general, in combination with a hydrocarbon such as CH

4

or hydrogen since the latitude can be increased. It is also possible to form a film by employing a carbon-free fluorine source such as ClF

3

, F

2

, SF

6

or HF in combination with a hydrocarbon or hydrogen. It is furthermore possible to use a mixture of the above-mentioned gasses or such gasses diluted with another gas such as a rare gas.

FIG. 2

is a schematic view showing the configuration of an example of the deposition apparatus for producing the photosensitive member of the present invention by plasma CVD employing a high frequency power supply.

The apparatus is principally composed of a deposition apparatus

2100

a raw material gas supply apparatus

2200

and a vacuum apparatus (not shown in the drawing) for evacuating the interior of a reaction chamber

2110

. In the reaction chamber

2110

of the deposition apparatus

2100

, there are provided a grounded cylindrical substrate

2112

on which a film is to be formed, a heater

2113

for the cylindrical substrate, and a raw material gas introducing pipe

2114

, and a high frequency power source

2120

is connected via a high frequency matching box

2115

to a cathod

2111

. There are also provided substrate holders

2121

,

2122

.

The raw material gas supply apparatus

2200

is composed of raw material gas containers and etching gas containers

2221

to

2226

such as for SiH

4

, H

2

, CH

4

, NO, B

2

H

6

, CF

4

etc., valves

2231

to

2236

,

2241

to

2246

,

2251

to

2256

and mass flow controllers

2211

to

2216

, and these gas containers are connected via a valve

2260

to the gas introducing pipe

2114

in the reaction chamber

2110

.

The high frequency power source to be employed in the present invention can have any output electric power suitable for an apparatus to be used in a range of 10 to 5000 W or higher. Also the high frequency power source may have any output fluctuation rate for attaining the effect of the present invention.

Also the matching box

2115

having any configuration may be advantageously employed as long as it can match the high frequency power source

2120

in a load. Automatic matching is advantageous for this purpose, but manual matching can also be employed without influencing the effect of the present invention at all.

A cathode

2111

receiving the high frequency power can be composed, for example, of copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, an alloy containing at least one of these elements, stainless steel or a composite material composed of two or more of these materials. The cathod is preferably shaped as a cylindrical shape but also as an oval shape or a polygonal shape if necessary. A cathode

2111

may be provided with cooling means if necessary. The cooling means can be selected for example from water, air, liquid nitrogen and Peltier element according to the requirement.

The cylindrical substrate

2112

on which a film to be formed in the present invention can be formed of a desired material and have a desired shape according to the purpose of use. For example, when an electrophotographic photosensitive member is produced, its shape is desirably cylindrical but may also assume a flat plate-like shape or other shapes according to the requirement. As the material of the substrate, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, or a composite material composed of two or more of the foregoing materials can be used. An insulating material coated with a conductive material can be also used, for example polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, glass, quartz, ceramics and paper which are coated with a conductive material. The surface may also be subjected to bite polishing or dimple forming for example in order to prevent interference.

In the following there will be explained an example of the method of producing the photosensitive member by the apparatus shown in FIG.

2

.

The cylindrical substrate

2112

on which a film is formed is placed in the reaction chamber

2110

, and the interior thereof is evacuated by a vacuum apparatus not shown in the drawing (for example, a vacuum pump). Then the cylindrical substrate

2112

is controlled by the substrate heater

2113

is controlled at a desired temperature within a range of 20° C. to 500° C.

In order to introduce raw material gasses for forming a photosensitive member into the reaction chamber

2110

, it is at first confirmed that the valves

2231

to

2236

of the gas containers and a leak valve

2117

of the reaction chamber are closed and that inlet valves

2241

to

2246

, outlet valves

2251

to

2256

and an auxiliary valve

2260

are opened, and a main valve

2118

is opened to evacuate the interior of the reaction chamber

2110

and the gas supply pipe

2116

.

Then the auxiliary valve

2260

and the outlet valves

2251

to

2256

are closed when the indication of a vacuum gauge 2119 reaches 5×10

−6

Torr. Then the valves

2231

to

2236

are opened to introduce gasses from the gas containers

2221

to

2226

, and each pressure of the gases is adjusted to 2 kg/cm

2

by pressure controllers

2261

to

2266

. Then the inlet valves

2241

to

2246

are gradually opened to introduce the gasses into the mass flow controllers

2211

to

2216

.

After the above-described preparation for film formation, a photoconductive layer is formed on the cylindrical substrate

2112

.

When the cylindrical substrate

2112

reaches a predetermined temperature, the predetermined valve(s) among the outlet valves

2251

to

2256

and the auxiliary valve

2260

are gradually opened to introduce predetermined raw material gasses from the gas containers

2221

to

2226

into the reaction chamber

2110

through the gas introduction pipe

2114

. Then the raw material gasses are controlled at predetermined flow rates by the mass flow controllers

2211

to

2216

. Also the aperture of the main valve

2118

is so controlled, under the observation of the vacuum gauge

2119

, that the interior of the reaction chamber

2110

is maintained at a predetermined pressure not exceeding 1 Torr. When the internal pressure is stabilized, the high frequency power source

2120

is set at a desired power to supply the power through the high frequency matching box

2115

to the cathode

2111

, thereby inducing high frequency glow discharge. The energy of the discharge decomposes the raw material gasses introduced into the reaction chamber

2110

, whereby a predetermined deposited film composed of silicon atoms as a main component is formed on the cylindrical substrate

2112

. After the formation of a film having a desired thickness, the supply of the high frequency power is stopped, and the outlet valves

2251

to

2256

are closed to interrupt the supply of the raw material gasses into the reaction chamber

2110

, whereby the formation of the deposited film is completed.

The surface layer of the present invention can also be formed by supplying the film-forming gasses and starting the discharge similarly to the above-described procedure. The fluorine-containing non-single-crystal carbon film providing the effects of the present invention can only be formed by the appropriate selection of the conditions such as the kind and mixing ratio of gasses to be used, film-forming pressure, high frequency electric power and frequency thereof, and film forming temperature, but can be formed in a conventional plasma CVD apparatus without a special apparatus.

The mixing ratio of the gasses is variable depending on the gas species, but, in general, satisfactory results can be obtained by increasing the amount of dilution with a gas of hydrocarbon or hydrogen for a strongly etching gas and decreasing such amount of dilution for a weakly etching gas. The film-forming pressure can be within the pressure range in the conventional film formation. Though it is variable depending on the gas species, a lower pressure for film formation tends to suppress the polymerization in gaseous phase. As regards the high frequency electric power, a discharge energy above a certain level is supplied to generate the fluorine radicals by dissociating the C—F bonds or the like. On the other hand, an excessive discharge energy is not desirable because the film-forming rate becomes extremely low due to the use of the etching gas. In case of concentric film formation apparatus, a power not exceeding 2000 W is preferred. As regards the frequency, a higher frequency generally provides a film of a higher hardness and a lower loss, but the film thickness becomes uneven when the frequency is excessively high. The film forming temperature can be within the temperature range in the conventional film formation conditions, but an excessively high temperature is not preferred because the band gap tends to become narrower to increase the loss.

As explained in the foregoing, the value set in each condition is not much different from that employed in the conventional film formation, but an appropriate film has not been produced with good reproductivity because the ratio of the peak areas is significantly dependent on the film forming parameters.

In the following there will be explained the film forming procedure in a more specific manner. Necessary ones of the outlet valves

2251

to

2256

and the auxiliary valve

2260

are gradually opened to introduce the raw material gasses required for the surface layer, for example, CF

4

gas and CH

4

gas, from the gas containers

2221

to

2226

into the reaction chamber

2110

through the gas introduction pipe

2114

. Then the gasses are adjusted to predetermined flow rates by the mass flow controllers

2211

to

2216

. At the same time the aperture of the main valve

2118

is so adjusted, under the observation of the vacuum gauge

2119

, that the interior of the reaction chamber

2110

reaches a predetermined pressure not exceeding 1 Torr. When the internal pressure is stabilized, the high frequency power source

2120

is set to a desired power to supply the power through the high frequency matching box

2115

to the cathode

2111

, thereby inducing high frequency glow discharge. The energy of the discharge decomposes the raw material gasses introduced into the reaction chamber

2110

, thereby a surface layer. After the formation of a film having a desired thickness, the supply of the high frequency power is stopped, and the outlet valves

2251

to

2256

are closed to interrupt the supply of the raw material gasses into the reaction chamber

2110

, whereby the formation of the surface layer is completed.

During the film formation, the cylindrical substrate

2112

may be rotated at a predetermined speed by a driving device (not shown in the drawing). When a still higher hardness is required in the film, a DC bias voltage may be supplied to the high frequency power by an low-pass filter not shown in the drawing.

FIG. 3

is a schematic view showing an example of the apparatus (of mass production type) for producing a light-receiving member by a plasma CVD method, which is different from that shown in FIG.

2

. Specifically,

FIG. 3

shows the schematic cross-sectional view for showing a reaction chamber section.

In

FIG. 3

, there are shown a reaction chamber

301

of a hermetically sealed structure; an exhaust pipe

302

having one end thereof opened in the reaction chamber

301

and the other end connected to a vacuum apparatus (not shown in the drawing); a discharge space

303

surrounded by cylindrical substrates

304

on which a film is to be formed; and a high frequency power source

305

connected electrically to an electrode

307

via a high frequency matching box

306

. The cylindrical substrate

304

is placed on a rotary shaft

309

in a state set on holders

308

a

and

308

b

, and may be rotated by a motor

310

if necessary.

The raw material gas supply apparatus (not shown in the drawing) can be similar to the apparatus

2200

shown in FIG.

2

. The raw material gasses are mixed and supplied, through a valve

312

, to a gas introducing pipe

311

in the reaction chamber

301

.

The high frequency power source to be employed in the present film forming apparatus can have any output electric power suitable for an apparatus to be used in a range of 10 to 5000 W or higher.

Also the high frequency power source may have any output fluctuation rate for attaining the effect of the present invention.

Also the matching box

306

of any configuration may be advantageously employed as long as it can match the high frequency power source

305

in a load. Automatic matching is advantageous for this purpose, but manual matching can also be employed without influencing the effect of the present invention at all.

An electrode

307

receiving the high frequency power can be composed of the same material as that constituting the cathode shown in FIG.

2

. Also its shape is the same or can be further adjustable if necessary. The electrode

307

may be provided with cooling means if necessary, similarly to the cathode shown in FIG.

2

.

Also the cylindrical substrate

304

on which a film is to be formed is the same as the substrate

2112

of

FIG. 2

as explained in relation to FIG.

2

.

FIG. 4

is a schematic view showing an example of the configuration of an electrophotographic apparatus, wherein a photosensitive member

401

rotates in a direction of an arrow X. Along the periphery of the photosensitive member

401

, there are provided a main charging unit

402

, an electrostatic latent image forming portion

403

, a developing unit

404

, a transfer sheet (transfer material) supply system

405

, a transfer charging unit

406

(

a

), a separation charging unit

406

(

b

), a cleaner

407

, a conveyor system

408

, a charge eliminating light source

409

, a blank exposure light source

420

, etc.

In the following there will be given a detailed explanation on the image forming process. The photosensitive member

401

is uniformly charged by the main charging unit

402

receiving a high voltage. The light emitted from a lamp

410

is reflected on an original

412

placed on an original supporting glass

411

, then guided by mirrors

413

,

414

,

415

, focused by a lens

418

of a lens unit

417

, further guided by a mirror

416

and projected onto the charged surface of the photosensitive member

401

, thereby forming an electrostatic latent image thereon. The projected light may also be a light from a laser or an LED, bearing image information over the surface. Negatively charged toner is supplied to the latent image from the developing unit

404

to form a toner image.

On the other hand, a transfer material P, supplied toward the photosensitive member

401

through the transfer sheet supply system

405

under the adjustment of timing of the front end by registration rollers

422

, is given a positive electric field, which is opposite in polarity to the toner, from the rear surface in the gap between the transfer charging unit

406

(

a

) receiving a high voltage and the photosensitive member

401

, whereby the negatively charged toner image on the surface of the photosensitive member is transferred onto the transfer material P. Then by the function of the separation charging unit

406

(

b

) receiving a high AC voltage, the transfer material P is separated and transported through the conveyor system

408

to a fixing device

424

, in which the toner image is fixed. Then the transfer material P is conveyed from the apparatus to the outside.

The toner remaining on the photosensitive member

401

is recovered by a magnet roller

427

of a cleaning unit

407

and a cleaning blade

421

maintained in contact with the photosensitive member

401

, and the remaining charge is eliminated by the charge eliminating light source

409

.

In the following there will be explained a method for determining the area ratio in the present invention.

FIG. 5

shows an example of the infrared (IR) absorption spectrum, which has peaks having the respective centers in the vicinity of 1120 cm

−1

, 1200 cm

−1

and 2920 cm

−1

. The spectrum shown in

FIG. 5

has a wave form corresponding to the synthesis of a wave form having the center at about 1120 cm

−1

and another wave having the center at about 1200 cm

−1

. Thus the entire spectrum shows a large peak portion composed of wave forms having the centers in the vicinity of 1120 cm

−1

and 1200 cm

−1

, and a small peak portion composed of a wave form having the center in the vicinity of 2920 cm

−1

.

The area of a peak having the center at a specified wave number can be determined in the following manner. In the case of a wave form composed of a single peak having the center at a wave number, for example, the peak having the center in the vicinity of 2920 cm

−1

shown in

FIG. 5

, a Gaussian distribution curve having the vertex in the vicinity of 2920 cm

−1

is fitted to the IR absorption wave form, and the area of a portion surrounded by such Gaussian distribution curve and the base line (which is indicated by a hatched area in

FIG. 5

) is determined.

In the case of the IR absorption wave form composed of synthesis of two wave forms, it is approximated by a wave form obtained by synthesizing two Gaussian distribution curves. More specifically, in the example shown in

FIG. 5

, a Gaussian distribution curve having the vertex in the vicinity of 1120 cm

−1

and another Gaussian distribution curve having the vertex in the vicinity of 1200 cm

−1

determined such that both curves are used to obtain a synthesized Gaussian distribution curve closest to the IR absorption spectrum. Then there are respectively calculated an area surrounded by the Gaussian distribution curve having the vertex in the vicinity of 1120 cm

−1

and the base line, and an area surrounded by the Gaussian distribution curve having the vertex in the vicinity of 1200 cm

−1

and the base line.

In the present invention, thus calculated areas can be utilized to determine the ratio of the area corresponding to 1120 cm

−1

or the area corresponding to 1200 cm

−1

and the area corresponding to 2920 cm

−1

.

In the case of the spectrum not having a synthesized wave form as shown in the left-hand side of

FIG. 5

, the Gaussian fitting is no longer necessary and there can be simply calculated the area surrounded by the IR absorption wave form and the base line.

In the following there will be explained preferred examples of the present invention, but it is to be understood that the present invention is by no means limited by such examples.

EXAMPLE 1

The plasma CVD apparatus shown in

FIG. 2

was employed to deposit, on a cylindrical Al substrate, a lower inhibition layer and a photoconductive layer under the conditions shown in Table 1, and then a surface layer under the conditions shown in Table 2, in this order, thereby completing a photosensitive member (drum). In this operation, the CF

4

flow rate was varied in five levels in a range of 20 to 100 sccm as shown in Table 4 while the high frequency power was varied in three levels within a range of 800 to 1200 W to obtain five photosensitive members. The measurements on the samples produced in advance confirmed that, within the above-mentioned ranges of CF

4

flow rate and the high frequency power, the ratio of the peak area of 1120 cm

−1

/2920 cm

−1

was within a range from 0.14 to 47.8 while the peak ratio of the peak area of 1200 cm

−1

/2920 cm

−1

was within a range from 0.31 to 48.3.

In order to evaluate the abrasion resistance of the five drums produced in the above-described manner, each drum was rotated at a process speed of 450 mm/sec, and a SiC polishing tape of an average particle size of 8 &mgr;m (LT-C2000 produced by Fuji Film Co., Ltd.) was maintained in contact and was pressed with parallel pins of 3 &phgr;, a width of 20 mm, thereby effecting polishing under a load. The polishing tape was constantly fed with a speed of about 1 mm/sec, thereby always supplying a new polishing surface, thus maintaining a constant polishing power and avoiding the influence of polishing debris. Such forced abrasion was conducted for 60 minutes and the difference in film thickness before and after the polishing test was measured with an optical film thickness meter. The change in film thickness is indicated by a relative amount to the abrasion amount of the SiC surface layer.

The characteristics obtained in the above-described evaluation tests are summarized in Table 4.

TABLE 1

Conditions for producing photosensitive member (lower

inhibition layer and photoconductive layer)

Lower inhibition layer

SiH

4

260

sccm

H

2

500

sccm

NO

7

sccm

B

2

H

6

2100

ppm

Power

110

W

Internal pressure

0.43

Torr

Film thickness

1.5

&mgr;m

Photoconductive layer

SiH

4

510

sccm

H

2

450

sccm

B

2

H

6

10

ppm (with respect to

SiH

4

)

Power

450

W

Internal pressure

0.55

Torr

Film thickness

20

&mgr;m

TABLE 2

Conditions for producing surface layer

CH

4

100 sccm

CF

4

variable (20-100 sccm)

Power

variable (800-1200 W)

Frequency

13.56 MHz

Internal pressure

0.4 Torr

Film thickness

0.1 &mgr;m

TABLE 2

Conditions for producing surface layer

CH

4

100 sccm

CF

4

variable (20-100 sccm)

Power

variable (800-1200 W)

Frequency

13.56 MHz

Internal pressure

0.4 Torr

Film thickness

0.1 &mgr;m

TABLE 4

Results of evaluation of abrasion (Example 1,

Comparative Example 1 produced at 13.56 MHz)

Abrasion

CH

4

CF

4

IR peak

IR peak

amount

flow

flow

ratio

ratio

(rela-

rate

rate

Power

1120 cm

−1

1200 cm

−1

tive

(sccm)

(sccm)

(W)

2920 cm

−1

2920 cm

−1

amount)

Ex. 1

100

40

800

7.4

9.1

AA

100

80

1000

25.6

34.8

A

100

20

1200

0.15

0.31

AA

100

60

1200

10.2

12.3

A

100

100

1200

47.8

48.3

B

Comp.

100

100

800

53.6

89.1

C

Ex. 1

AA: no abrasion observed

A: very little abrasion

B: comparable to SiC surface layer

C: all surface layer abraded

Comparative Example 1

The plasma CVD apparatus shown in

FIG. 2

was employed to deposit, on a cylindrical Al substrate, a lower inhibition layer and a photoconductive layer under the conditions shown in Table 1, and then a surface layer under the conditions shown in Table 2, in this order. In this operation, the surface layer was produced with a CF

4

flow rate of 100 sccm and a high frequency power of 800 W as shown in Table 4. The surface layer showed respective peak ratios of 53.6 and 89.1.

There were conducted evaluations similar to those in the Example 1, and the results of evaluations are summarized in Table 4 together with those of Example 1.

In Example 1 conducted within the range of the present invention, the amount of abrasion is smaller than or comparable to that in the SiC surface layer. The SiC surface layer is scarcely abraded by copying operation using the number of papers required for the a-Si photosensitive member, but the abrasion was observed because of a harsh evaluating condition for clarifying the difference. On the other hand, in Comparative Example 1 which is outside the range of the present invention, the surface layer showed a larger abrasion than in the SiC surface layer and was almost abraded off. In this case a considerable abrasion is anticipated in the actual copying conditions, resulting in a practical problem. These results indicate that the area ratio of the peak at 1120 cm

−1

or 1200 cm

−1

to the peak at 2920 cm

−1

should not exceed 50.

EXAMPLE 2

The plasma CVD apparatus shown in

FIG. 2

was employed to deposit, on a cylindrical Al substrate, a lower inhibition layer and a photoconductive layer under the conditions shown in Table 1, and then the plasma CVD apparatus shown in

FIG. 3

employed to deposit a surface layer under the conditions shown in Table 3, in this order. In this operation, the CF

4

flow rate was varied in five levels in a range of 20 to 100 sccm as shown in Table 5 while the high frequency power was varied in three levels within a range of 800 to 1200 W to obtain five photosensitive members. The measurements on the samples produced in advance confirmed that, within the above-mentioned ranges of CF

4

flow rate and the high frequency power, the ratio of the peak area of 1120 cm

−1

/2920 cm

−1

was within a range from 0.17 to 46.7 while the ratio of the peak area of 1200 cm

−1

/2920 cm

−1

was within a range from 0.22 to 47.5.

In order to evaluate the durability of water repellent effect of the five drums produced in the above-described manner, each drum was subjected to the polishing test as in Example 1, and the amount of fluorine was measured before and after the polishing test to determine the remaining ratio of fluorine with respect to the initial amount. The amount of fluorine was measured by X-ray photoelectron spectroscopy (XPS) in an area very close to the surface (about 50 Å). Also the water repellent property before and after the polishing was evaluated by the contact angle with deionized water, measured by a contact angle meter (CA-S-roll type, produced by Kyowa Kaimen Kagaku Co.). Also for confirming the effect of fluorine remaining after the polishing test, the photosensitive member after the polishing test was mounted on a Canon NP-5060 copying machine modified for experimental purpose, and was subjected to idle rotation of an amount corresponding to 20,000 A4-sized sheets under a high-temperature high-humidity atmosphere of 32° C. and 88% without any heating means such as a drum heater such that the ozone products could sufficiently reach the surface. Then the photosensitive member was left standing for 3 hours in the same high-temperature and high-humidity atmosphere while the copying machine is stopped. Thereafter, generation of the smeared image was evaluated by copying a Canon test chart (part number FY9-9058) and judging line-and-space patterns and contours of characters on the chart.

The results of these evaluations are summarized in Table 5.

TABLE 5

Fluorine before and after polishing (Example 2, Comparative Example 2

produced with 105 MHZ)

CH

4

CF

4

Remaining

flow

flow

Image smear

fluorine ratio

rate

rate

Power

Contact angle(°)

under high

after/before

(sccm)

(sccm)

(W)

before polish

after polish

temp/humidity

polishing