Avalanche photodiode
专利汇可以提供Avalanche photodiode专利检索，专利查询，专利分析的服务。并且PURPOSE:To expand a region to be used to low amplification region by forming an n type pi-junction in a photodetector, expanding a depletion layer without operational amplification, forming a p type layer remote from the junction to raise the field value only for the photodetector, thereby obtaining a multiplying action. CONSTITUTION:An Al-added layer 2 is formed on the back surface which opposes the photodetecting region of a pi-type Si wafer 1, a high density B-added Si layer 3 is superposed, is heat treated at a high temperature, and an Al diffused layer 4 having approx. 20mum of thickness is formed. The surface is etched, thereby forming the thickness of the pi-layer in approx. 50mum. B is diffused in the surface to form a p type channel stopper 5, P is diffused to form an n type protective ring 6, Al is diffused oppositely to the layer 4 to form a p type layer 7, an Si3N4 non-reflection film 8 and a protective film 9 of Si3N4-SiO2 is formed except the photodetector are formed. An Al electrode 10 and an Au-Si electrode 11 are respectively attached eventually to the front and back surfaces. When a voltage is applied to the element, the depletion layer is first expanded to the pi-layer in the state that the amplification factor M=1, thereby forming a PIN-type photodiode. When the voltage is further raised, the depletion layer punches through the layer 7-4, thereby exhibiting the amplifying phenomenon to become M>1. Thus, the region to be used can be largely expanded as compared with the conventional M>=10.，下面是Avalanche photodiode专利的具体信息内容。
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