专利汇可以提供Apparatus and a method for employing said apparatus to determine the low field resistance of dc-biased gunn diodes专利检索,专利查询,专利分析的服务。并且A Gunn diode is DC-biased to its operating point. A negative pulse having an amplitude equal to the bias voltage is applied across the Gunn diode. A first sinewave signal having a given frequency and a selected magnitude is applied across the Gunn diode. A voltage probe is coupled by a switch to one input of a dual-trace oscilloscope to display the waveform of the voltage across the Gunn diode on the oscilloscope. A second sinewave signal having the given frequency is applied to the other input of the dual-trace oscilloscope. The displayed waveform of the second signal is adjusted in magnitude until it is superimposed upon the first waveform on the oscilloscope. A RMS voltmeter is coupled across the second input of the oscilloscope to measure the value of the voltage of the second signal and, hence, the voltage across the Gunn diode, after the two sinewave signals are superimposed. The switch is moved to a second position so that the output of an AC current probe is coupled to the first input of the oscilloscope. The current probe converts the current through the Gunn diode to a voltage and has a known calibration or ampere to voltage conversion factor. The voltage waveform produced by the current probe is displayed on the oscilloscope and the magnitude of the second sinewave signal is adjusted until it is superimposed upon this displayed waveform. The RMS voltmeter measures the value of this second sinewave signal after these two sinewave signals are superimposed. This latter value is equal to the voltage at the output of the current probe. This latter reading of the voltmeter is multiplied by the calibration factor to provide the value of the current flowing through the Gunn diode. Then the first reading of the voltmeter is divided by the second reading of the voltmeter to determine the low field resistance of the Gunn diode.,下面是Apparatus and a method for employing said apparatus to determine the low field resistance of dc-biased gunn diodes专利的具体信息内容。
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