Avalanche photodiode
专利汇可以提供Avalanche photodiode专利检索，专利查询，专利分析的服务。并且PURPOSE:To provide an avalanche photodiode having a less dark current with respect to a long light wave length by a method wherein N layer and P layer having a high prohibitive band width larger than that of N layer on N base plate are piled up in sequence on N layer of N base plate, and ohm electrodes are attached to both frot and rear surfaces of the layers. CONSTITUTION:N epitaxial layer 3 is overlapped on N type base plate 1 of a compound semiconductor, N layer 22 and P layer 24 having a larger prohibitive band width than that of the epitaxial layer 3 are piled in sequence, and an ohm electrode is arranged on the base plate 1 and P layer. When a P-N junction 23 is reverse baised, a hole layer 25 terminating in N layer 3 is produced. When the light 9 is incident to the P layer, electron 10 is energized in P layer 24, a positive hole 11 is energized in N layers 3 and 22, accelerated by a high electric field in the vacant layer 25, resulting in producing an avalanche multiplying area 26 so as to make a photoelectric current. At this time, the layers 22 and 24 have a higher prohibitive band width than that of the layer 3, the layer 3 acts as a light absorbing layer, so that a high photoelectric transducing function may be made with respect to a light having a long wave length and further a dark current may be made small compared to the photoelectric current whatever a biasing voltage may be applied.，下面是Avalanche photodiode专利的具体信息内容。
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