Photoelectric type encoder
专利汇可以提供Photoelectric type encoder专利检索，专利查询，专利分析的服务。并且PURPOSE:To reduce current consumption for light emittance, to reduce light diffraction, and to reduce noises, by arranging thin belt shaped films on a light receiving surface of a P-N junction, thereby forming optical gratings. CONSTITUTION:The light from a light emitting device 18 passes the first optical grating 10 and reaches the second optical grating. In the second optical grating 12 which moves in correspondence with the measured value, an N type semiconductor substrate 28 and a P type semiconductor layer 30 are formed on a glass substrate 26, and a photodiode is formed by the P-N junction plane. A light transmitting insulating layer 32 whose main component is silicon oxide is formed on the semiconductor layer 30, and the secular change of the P-N junction is prevented. Furthermore, the thin belt shaped opaque films 34 are formed on the surface of the insulating layer 32 and act as the optical grating.，下面是Photoelectric type encoder专利的具体信息内容。
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