METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES
专利汇可以提供METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES专利检索，专利查询，专利分析的服务。并且A method is described for forming gate structures with different metals on a single substrate. A thin semiconductor layer (26) is formed over gate dielectric (24) and patterned to be present in a first region (16) not a second region (18). Then, metal (30) is deposited and patterned to be present in the second region not the first. Then, a fully suicided gate process is carried out to result in a fully suicided gate structure in the first region and a gate structure in the second region including the fully suicided gate structure above the deposited metal (30).，下面是METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES专利的具体信息内容。
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