Ion implantation
专利汇可以提供Ion implantation专利检索，专利查询，专利分析的服务。并且PURPOSE:To avoid the waste of work in processes afterwards by removing defective substrates by detecting the mixed ratio of O2 ions imcluded in p beams when implanting phosphor ions to a silicon substrate to be processed using characteristic X- rays generated from the substrate. CONSTITUTION:In a sample chamber 1, a component of an ion implantation device, a target 2 to which a silicon substrate 3 to be processed is attached is arranged and a p ion beam a is irradiated to the substrate 3. In an ion source chamber 4, PH3 gas or PF5 is filled and p ions are generated by plasma discharge, and passing an accelerating tube 5, a mass spectrometer 6 and a scanner 7, the ions are irradiated to the substrate 3. At this time, characteristic X-rays b resulting from O2 ions included in the beam a are monitored by an X-ray measuring system consisting of a proportional counter 8, a high voltage power source 9, a preamplifier 10, a linear amplifier 11, a crest analyser 12, a teletypewriter 13, etc., and if the mixed ration of O2 ions exceeds an allowed limit, a mark is put on the substrate and the substrate is hardled as defective after that.，下面是Ion implantation专利的具体信息内容。
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