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The present general inventive concept relates to a method of manufacturing an inkjet printhead, and an inkjet printhead manufactured using the method, and more particularly, to a method of manufacturing an inkjet printhead in which formation of a reaction layer at the bottom of a nozzle layer is prevented, and an inkjet printhead prepared using the method.
Inkjet printheads eject tiny droplets of print ink onto a predetermined portion of a to-be-printed sheet so as to produce a predetermined color image, and are categorized into thermal driving type inkjet printheads and piezoelectric driving type inkjet printheads according to an ejection mechanism of ink droplets. As for the thermal driving type inkjet printheads, ink droplets are ejected by an expansion force of bubbles generated when a heat source is applied to the generated bubbles within the ink. As for the piezoelectric driving type inkjet printheads, ink droplets are ejected by a pressure to ink due to a deformation of a piezoelectric device using the device.
Referring to
An ink droplet ejection mechanism of the conventional thermal driving type inkjet printhead will now be described in detail. Ink is fed from an ink container (not illustrated) into the ink chamber 53 through the ink feed hole 51 and the restrictor 52. The ink filled within the ink chamber 53 is then heated by the heater 41 which is formed of a heat-generating resistance and which is located within the ink chamber 53. Once the ink boils, ink generates bubbles, and the generated ink bubbles apply pressure to the ink filled within the ink chamber 53. Therefore, the ink within the ink chamber 53 is ejected through the nozzle 54 to the outside of the ink chamber 53 in the form of droplets.
A conventional inkjet printhead has a protrusion 55, hereinafter referred to as a reaction layer, at the bottom of a nozzle layer, as illustrated in
The present general inventive concept provides a method of manufacturing an inkjet printhead according to claim 1, in which a solvent included in a positive photoresist composition or in a non-photosensitive soluble polymer composition which is used to form a sacrificial layer has a different polarity from that of a solvent included in a negative photoresist composition that is used to form at least one of a channel forming layer and a nozzle layer.
A resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may include a different polarity from a resin included in the negative photoresist composition.
A difference between dipole moments of the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition and dipole moments of the solvent included in the negative photoresist composition that is used to form at least one of the channel forming layer and the nozzle layer may be about 1.5 Debye or more.
The solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may include a lower polarity than the solvent included in the negative photoresist composition.
A dipole moment of the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be about 1 Debye or less.
A dipole moment of the solvent included in the negative photoresist composition may be about 2.5 Debye or more.
A resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may include a lower polarity than a resin included in the negative photoresist composition.
A resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be a prepolymer having a bisphenol-A based backbone, represented by Formula 1a:
, where n is an integer ranging from 2 to 10, and R1 to R24 are each independently a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20alkynyl group, a C6-C30aryl group, or a C7-C30arylalkyl group.
A resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be a prepolymer having a bisphenol-A based backbone, represented by Formula 2a:
, where n is an integer ranging from 2 to 10, and R1 to R4 and R21 to R24 are each independently a C1-C20 alkyl group.
The solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may include a higher polarity than the solvent included in the negative photoresist composition.
A dipole moment of the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be about 2.5 Debye or more.
A dipole moment of the solvent included in the negative photoresist composition may be about 1 Debye or less.
A resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may include a higher polarity than a resin included in the negative photoresist composition.
The solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may include one or more compounds selected from the group consisting of gamma-butyrolactone, propylene glycol methyl ethyl acetate, tetrahydrofurane, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone and xylene.
A resin included in the negative photoresist composition may be an epoxy-based resin.
The method of manufacturing an inkjet printhead includes disposing a heater for heating an ink and an electrode for supplying a current to the heater on a substrate, disposing a channel forming layer which defines an ink channel by coating a first negative photoresist composition on the substrate on which the heater and the electrode are disposed and then patterning the coated composition using a photolithography process, disposing a sacrificial layer by coating a positive photoresist composition or a non-photosensitive soluble polymer composition on the substrate on which the channel forming layer is disposed such that the coated composition completely covers the channel forming layer, planarizing top surfaces of the channel forming layer and the sacrificial layer using a polishing process, disposing a nozzle layer having a nozzle by coating a second negative photoresist composition on the channel forming layer and the sacrificial layer and patterning the coated composition using a photolithography process, forming an ink feed hole in the substrate, and removing the sacrificial layer.
The polishing process may be a chemical mechanical polishing (CMP) process.
The present general inventive concept also provides an inkjet printhead manufactured using the method of manufacturing the inkjet printhead.
Additional aspects and/or utilities of the present general inventive concept will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the general inventive concept.
The above and/or other features and utilities of the present general inventive concept will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
An exemplary embodiment of a method of manufacturing an inkjet printhead and an exemplary embodiment of an inkjet printhead manufactured using the method will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated.
Reference will now be made in detail to the exemplary embodiments of the present general inventive concept, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. The exemplary embodiments are described below in order to explain the present general inventive concept by referring to the figures.
The general inventive concept of the present application may be embodied in many different forms and should not be construed as being limited to the exemplary embodiments set forth herein; rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the general inventive concept of the present invention to those of ordinary skill in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present
Exemplary embodiments of the present general inventive concept set forth herein will be described based on a thermal driving type inkjet printhead. However, the present general inventive concept may also be applied to a piezoelectric driving type inkjet printhead. Also, the present general inventive concept may also be applied to a monolithic type of inkjet printhead and a contact type of inkjet printhead. The drawings of the present application illustrate only a part of a silicon wafer, and the inkjet printhead according to the present general inventive concept may be manufactured in a form of tens to hundreds of chips on a single wafer.
In the exemplary embodiment of a method of manufacturing an inkjet printhead according to the present general inventive concept, a solvent included in a positive photoresist composition or non-photosensitive soluble polymer composition which is used to form a sacrificial layer may have a different polarity from that of a solvent included in a negative photoresist composition which is used to form a channel forming layer and a nozzle layer. In this regard, the terminology 'soluble' means solubility with respect to a specific solvent.
According to another exemplary embodiment of the present general inventive concept, a resin included in a positive photoresist composition or a non-photosensitive soluble polymer composition has a different polarity from that of a resin included in a negative photoresist composition. In exemplary embodiments, the resin may be a prepolymer, an oligomer, or a polymer. However, the present general inventive concept is not limited thereto. When a resin includes many functional groups having a high polarity, the resin may be a polar polymer, and when a resin only includes functional groups having a low polarity, such as an ether group, the resin may be a relatively non-polar polymer.
When a negative photoresist composition that includes a resin and/or a solvent having a different polarity from a resin and/or solvent included in a composition which is used to form a sacrificial layer that fills an inside of the channel forming layer is used to form a nozzle layer, the sacrificial layer does not react with the nozzle layer. As a result, a reaction layer may not be formed at a bottom of the nozzle layer.
According to another exemplary embodiment of the present general inventive concept, a difference between dipole moments of a resin and/or solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition and dipole moments of a resin and/or solvent included in the negative photoresist composition which is used to form the channel forming layer and the nozzle layer may be about 1.5 Debye or more. When the difference is less than 1.5 Debye, the formation of the reaction layer cannot be prevented since the difference in polarity is small. In general, as the dipole moment increases in value, a degree of polarity increases. On the other hand, as the dipole moment decreases in value, a degree of non-polarity decreases. For example, the dipole moment of hydrocarbon, such as pentane, is 0 Debye, and the dipole moment of dimethylketone including a carbonyl group is 2.69 Debye (at 20°C).
According to another exemplary embodiment of the present general inventive concept, the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may have a lower polarity than that of the solvent included in the negative photoresist composition. In an exemplary embodiment, the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be xylene (dipole moment of 0.45 Debye), and the solvent included in the negative photoresist composition may be cyclopentanone (dipole moment of 2.7 Debye.) However, the present general inventive concept is not limited thereto.
Specifically, the dipole moment of the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be about 1 Debye or less, and specifically, about 0.5 Debye or less. When the dipole moment of the solvent is more than 1 Debye, the solvent may not be suitable as a non-polar solvent. The dipole moment of the solvent included in the negative photoresist composition may be about 2.5 Debye or more, and specifically, about 3.0 Debye or more. When the dipole moment of the solvent is less than 2.5 Debye, the solvent may not suitable as a polar solvent
According to another exemplary embodiment of the present general inventive concept, the resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may have a lower polarity than that of the resin included in the negative photoresist composition. In an exemplary embodiment, the resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be a non-polar resin and the resin included in the negative photoresist composition may be a polar resin. In exemplary embodiments, the non-polar resin only includes functional groups having a low polarity, and the polar resin includes functional groups having high polarity. In further exemplary embodiments, a functional group having a low polarity may be an ether group, a hydrocarbon group, or the like, and a functional group having a high polarity may be a carbonyl group, an ester group, or the like. However, the present general inventive concept is not limited thereto.
According to another exemplary embodiment of the present general inventive concept, the resin having a low polarity and which is included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be a prepolymer having a bisphenol-A based backbone represented by Formula 1 a:
,where n is an integer ranging from 2 to 10, and R1 to R24 are each independently a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C6-C30 aryl group, or a C7-C30 arylalkyl group. However, the present general inventive concept is not limited thereto.
In an exemplary embodiment, such a resin may be a prepolymer having a bisphenol-A based backbone represented by Formula 2a:
, where n is an integer ranging from 2 to 10, and R1 to R4 and R21 to R24 are each independently a C1-C20 alkyl group. However, the present general inventive concept is not limited thereto.
The viscosity of the positive photoresist composition or of the non-photosensitive soluble polymer composition which includes the prepolymer represented by either Formulae 1a or 2a may be about 1500 cps or more, and more specifically, in a range of about 1500 to 3000 cps. In an exemplary embodiment, the viscosity of such compositions may be about 2000 cps. When the viscosity of such compositions is less than 1500 cps, a fill-up process should be performed several times due to such a low viscosity of the compositions and thus the manufacturing costs and time associated therewith may be increased.
According to another exemplary embodiment of the present general inventive concept, the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may have a higher polarity than that of the solvent included in the negative photoresist composition. In an exemplary embodiment, the solvent included in the photoresist composition or in the non-photosensitive soluble polymer composition may be cyclopentanone (dipole moment of 2.7 Debye) and the solvent included in the negative photoresist composition may be xylene (dipole moment of 0.45 Debye). However, the present general inventive concept is not limited thereto.
Specifically, the dipole moment of the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be about 2.5 Debye or more, and more specifically, about 3.0 Debye or more. When the dipole moment of the solvent included in the positive photoresist composition or in the non-photosensitive soluble polymer composition is less than 2.5 Debye, the solvent may not be suitable as a polar solvent. The dipole moment of the solvent included in the negative photoresist composition may be about 1.0 Debye or less, and more specifically, about 0.5 Debye or less. When the dipole moment of the solvent included in the negative photoresist composition is more than 1 Debye, the solvent may not be suitable as a non-polar solvent.
According to another exemplary embodiment of the present general inventive concept, a resin included in the positive photoresist composition or in the non-photosensitive soluble polymer composition may have a higher polarity than that of a resin included in the negative photoresist composition. In an exemplary embodiment, the positive photoresist composition may include a polar resin, and the negative photoresist composition may include a non-polar resin. However, the present general inventive concept is not limited thereto.
The viscosity of the positive photoresist composition or of the non-photosensitive soluble polymer composition which includes the prepolymer represented by either Formulae 1 b or 2b may be about 1500 cps or more, and more specifically, in a range of about 1500 to about 3000 cps. In an exemplary embodiment, the viscosity of such compositions may be about 2000 cps. When the viscosity of such compositions is less than 1500 cps, a fill-up process should be performed several times due to such a low viscosity of the compositions and thus the manufacturing costs and time associated therewith may be increased.
According to another exemplary embodiment of the present general inventive concept, a solvent that is used in the positive photoresist composition or in the non-photosensitive soluble polymer composition may be gamma-butyrolactone, propylene glycol methyl ethyl acetate, tetrahydrofurane, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, xylene and/or a mixture thereof. However, the present general inventive concept is not limited thereto. In an exemplary embodiment, the solvent may be any solvent that is used or conventionally known in the art. When the positive photoresist composition or the non-photosensitive soluble polymer composition has a higher polarity than that of the negative photoresist composition, the positive photoresist composition or the non-photosensitive soluble polymer composition may use a solvent having a large dipole moment value. On the other hand, when the positive photoresist composition or the non-photosensitive soluble polymer composition has a lower polarity than that of the negative photoresist composition, the positive photoresist composition or the non-photosensitive soluble polymer composition may use a solvent having a small dipole moment value. However, the present general inventive concept is not limited thereto.
According to another exemplary embodiment of the present general inventive concept, a resin included in the negative photoresist composition may be an epoxy-based resin. However, the type of the resin may not be limited to the epoxy-based resin, and therefore can be any resin that is used in a negative photoresist composition or conventionally known in the art.
An exemplary embodiment of a method of manufacturing the inkjet printhead according to the present general inventive concept includes forming a heater for heating an ink and an electrode for supplying a current to the heater which is disposed on a substrate, forming a channel forming layer defining an ink channel by coating a first negative photoresist composition on the substrate on which the heater and the electrode are formed and then patterning the coated composition using a photolithography process, forming a sacrificial layer by coating a positive photoresist composition or a non-photosensitive soluble polymer composition on the substrate on which the channel forming layer is formed such that the coated composition completely covers the channel forming layer, planarizing top surfaces of the channel forming layer and the sacrificial layer by using a polishing process, forming a nozzle layer having a nozzle by coating a second negative photoresist composition on the channel forming layer and the sacrificial layer and patterning the coated composition using a photolithography process, forming an ink feed hole in the substrate, and removing the sacrificial layer.
In an exemplary embodiment of the method, the substrate may be a silicon wafer, and the forming of a channel forming layer may include completely coating a first negative photoresist composition on the surface of the substrate to form a first photoresist layer, exposing the first photoresist layer using a first photomask having an ink channel pattern, and developing the first photoresist layer to remove the unexposed portion of the first photoresist layer so as to form the channel forming layer.
In an exemplary embodiment of the method of forming of the sacrificial layer, the sacrificial layer is formed to a thickness larger than a thickness of the channel forming layer. In an exemplary embodiment, the sacrificial layer may be formed using a spin coating process. However, the present general inventive concept is not limited thereto.
In an exemplary embodiment of the method of planarizing, top portions of the channel forming layer and the sacrificial layer are planarized using a polishing process until the ink channel has a predetermined height. In an exemplary embodiment, the polishing process may be a chemical-mechanical-polishing (CMP) process. However, the present general inventive concept is not limited thereto.
In an exemplary embodiment, the method of forming a nozzle layer may include coating the second negative photoresist composition on the channel forming layer and the sacrificial layer to form a second photoresist layer, exposing the second photoresist layer using a second photomask having a nozzle pattern, and developing the second photoresist layer to remove unexposed portions of the second photoresist layer so as to form a nozzle and a nozzle layer. In an exemplary embodiment, the forming of an ink feed hole may include coating photoresist on a bottom surface of the substrate, patterning the photoresist to form an etch mask for forming the ink feed hole, and etching portions of the bottom surface of the substrate that are exposed through the etch mask to form the ink feed hole. In this regard, the bottom surface of the substrate may be etched using a dry etching method using plasma or a wet etching method using tetramethyl ammnonium hydroxide (TMAH) or KOH as an etchant. However, the present general inventive concept is not limited thereto.
In exemplary embodiments, the first and second negative photoresist compositions may include, in addition to an acrylate-based resin, a variety of resins. In an exemplary embodiment, the first and second negative photoresist compositions may further include, in addition to the resin, a cationic photo initiator and a solvent. However, the present general inventive concept is not limited thereto.
In an exemplary embodiment, the resin included in the negative photoresist composition may be cross-linked when exposed to actinic radiation, such as ultraviolet (UV) radiation.
According to the present general inventive concept, a top surface of a sacrificial layer may be planarized, thereby allowing the shape and dimensions of an ink channel to be easily controlled, and thus, the uniformity of the ink channel can be improved.
First, referring to
Specifically, the heater 141 is formed by depositing a heat-generating resistance, such as a tantalum-nitride alloy or a tantalum-aluminum alloy, on the substrate 110 by using a sputtering method or a chemical vapor deposition method, and then patterning the deposited material. However, the present general inventive concept is not limited thereto.
The electrode 142 is formed by depositing a conductive metal, such as aluminum or aluminum alloy, on the substrate 110 by using a sputtering method and then patterning the deposited material. In addition, although not illustrated, a protective layer formed of silicon oxide or a silicon nitride may be formed on the heater 141 and on the electrode 142. However, the present general inventive concept is not limited thereto.
Then, referring to
Then, referring to
Then, the first negative photoresist layer 121 is developed in order to remove the unexposed portion of the first negative photoresist layer 121 so as to form the channel forming layer 120 defining an ink channel, as illustrated in
Then, referring to
Then, referring to
The second negative photoresist layer 131 is for forming the nozzle layer 130 (refer to
In addition, since the top surfaces of the sacrificial layer S and the channel forming layer 120 are planarized to be flush with each other in the previous process, deformation or melting of an edge portion of the sacrificial layer S due to a reaction between a material forming the second negative photoresist layer 131 and the material forming the sacrificial layer S may not occur. Therefore, in exemplary embodiments, the second photoresist layer 131 may closely contact the top surface of the channel forming layer 120.
Then, referring to
Then, referring to
An inkjet printhead manufactured using methods according to exemplary embodiments of the present general inventive concept, as described above, do not include a reaction layer at a lower end of a nozzle layer since a composition for forming a sacrificial layer and a composition for forming the nozzle layer have different polarities.
The present general inventive concept will now be described in further detail with reference to the following examples. These examples are for illustrative purposes only and are therefore not intended to limit the scope of the present general inventive concept.
Toluene-4-sulfonic acid methyl ester as represented by Formula 13 was synthesized according to Reaction Scheme 1.
A compound, having a bisphenol-A based backbone, represented by Formula 3 was synthesized according to Reaction Scheme 2.
, where n is an integer ranging from 2 to 4.
30 g of cyclopentanone and 1 g of SP-172, produced by Asahi Denka Korea Chemical Co., were added to a jar to prepare a photoresist solution, and then 35 g of an epoxy resin (EPON SU-8 RESIN, FROM HEXION) was added to the jar. The resultant mixture was mixed using a roller for about 24 hours in order to prepare a negative photoresist composition.
A negative photoresist composition was prepared in the same manner as in Preparation Example 1 except that xylene was used as the solvent instead of cyclopentanone.
30 g of xylene and 1 g of SP-172, produced by Asahi Denka Korea Chemical Co., were added to a jar to prepare a photoresist solution, and 35 g of prepolymer having a bisphenol-A based backbone substituted with a methyl group at its terminal and prepared according to Synthesis Example 2, was added to the jar. The resultant mixture was mixed using a roller for about 24 hours in order to prepare a positive photoresist composition.
A positive photoresist composition was prepared in the same manner as in Preparation Example 3 except that cyclopentanone was used instead of xylene and ODUR 1010A TOK was used instead of the prepolymer prepared according to Synthesis Example 2.
30 g of xylene was added to a jar to prepare a photoresist solution, and then 35 g of prepolymer having a bisphenol-A based backbone substituted with a methyl group at its terminal and prepared according to Synthesis Example 2 was added to the jar. The resultant mixture was mixed using a roller for about 24 hours in order to prepare a non-photosensitive soluble polymer composition.
A tantalum nitride heater pattern 141 having a thickness of about 500 Å and an electrode pattern 142 formed of an AlSiCu alloy (Si and Cu each in an amount of 1 wt.% or less) having a thickness of about 500 Å were formed on a 6-inch silicon wafer 110 using a conventional sputtering process and a photolithography process (see
Then, as illustrated in
Then, a CMP process was performed to planarize top surfaces of the channel forming layer 120 and the sacrificial layer S, as illustrated in
As illustrated in
An SEM image of a cross-section of the nozzle layer 130 of the inkjet printhead is illustrated in
An inkjet printhead was manufactured in the same manner as in Example 1, except that the negative photoresist composition prepared according to Preparation Example 2 was used as first and second negative photoresist compositions and the positive photoresist composition prepared according to Preparation Example 4 was used as a positive photoresist composition.
A SEM image of a cross-section of a nozzle layer of the inkjet printhead is illustrated in
An inkjet printhead was manufactured in the same manner as in Example 1, except that the negative photoresist composition prepared according to Preparation Example 2 was used as first and second negative photoresist compositions and the positive photoresist composition prepared according to Preparation Example 5 was used as a positive photoresist composition. The manufactured inkjet printhead was identified using an electronic microscope and it was found that a reaction layer was not formed at a bottom of a nozzle layer.
As illustrated in
While the present general inventive concept has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by one of ordinary skill in the art that various changes in form and details may be made therein without departing from the scope of the present general inventive concept as defined by the following claims.
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