专利汇可以提供Optical memory device专利检索,专利查询,专利分析的服务。并且An optical memory device comprising a compound film formed of two materials adjacent to each other; one material being such that its threshold voltage of current controlled differential negative resistance decreases with the light applied, and the other being an amorphous chalcogenide system. This amorphous chalcogenide system includes a substance selected from the group consisting of chalcogenide systems As-Te-Ge, Te-Ge-Sb-S, Te-Ge-SAs, Te-Ge-S-P, Te-Ge-Sb, Te-Ge-Sb-As, Se-Te-Ge, and S-Se-Te, and Zn-As. When a voltage is applied across said compound film, and a specific area of the compound film is irradiated by light, changes are introduced into the amorphous chalcogenide and thus a memory is fixed therein. The device is further characterized in that the material of which the threshold voltage of current controlled differential negative resistance decreases with the light applied, is a control material selected from the group consisting of CdS, CdSe, ZnSe, CdTe, SiO, Nb2O5, TiO2, SbSI, PbZrO3, NiO, VO2, Fe2O3 doped with 1-20% Cu, Fe3O4, MoO, TiO2, Cu2O, yttrium iron garnet doped with silicon Si and also the amorphous chalcogenide systems As-Te-Ge-S, As-Te-Ge-Si, and AsTe-Ge. Also, avalanche photodiode and light actuated silicon controlled rectifier (LASCR) having the same property can be used as the control materal.,下面是Optical memory device专利的具体信息内容。
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