Semiconductor switching and storage device
阅读：838发布：2022-06-21
专利汇可以提供Semiconductor switching and storage device专利检索，专利查询，专利分析的服务。并且A Schottky barrier non-volatile bistable switch and memory device, such as a rhodium contact on gallium arsenide. In one embodiment, a field effect transistor with bistable Schottky contact is made. The latter is employed in storage cell arrangement.，下面是Semiconductor switching and storage device专利的具体信息内容。
2. The device as set forth in claim 1 wherein said metal is rhodium and said semiconductor material is gallium arsenide.
3. The bistable switch and memory cell as set forth in claim 1 wherein said field-effect transistor arrangement forms a memory cell including potential means coupled to said Schottky contact and to said at least first and second electrodes, said potential means coupled to said Schottky contact by impedance means so that the potential applied to said Schottky contact changes in dependence upon which of said either of two stable impedance states exist between said Schottky contact and one of the said at least first and second electrodes whereby the current path between said at least first and second electrodes varies in accordance with the said potential applied to said Schottky contact.
4. The bistable switch and memory cell as set forth in claim 3 including both means to apply pulses to said Schottky contact to switch said cell between said either of two stable impedance states and means to apply pulses to one of the said at least first and second electrodes such that the resultant level of current flow between said at least first and second electrodes is indicative of one or the other of the said two stable impedance states existing in said memory cell.
5. The device as set forth in claim 1 wherein said semiconductor material comprises silicon doped with a substance which creates deep energy traps.
6. The device as set forth in claim 5 wherein said silicon is doped with at least one substance of the group platinum, nickel, gold, iron, manganese, mercury, chromium, silver, copper, zinc, and cobalt.
7. The device as set forth in claim 4 wherein said metal is rhodium and said semiconductor material is gallium arsenide.
8. A field effect transistor including a source and drain electrode, the improvement comprising a gate electrode forming a Schottky barrier with the semiconductor substrate region thereof, said semiconductor substrate region including semiconductor material at least within reach of said Schottky barrier exhibiting a sufficient density of deep energy traps such that the interaction between the charge carriers thereof and said traps may assume either of two stable states to thereby provide non-volatile bistable impedance characteristics between said gate electrode and one of said source and drain electrodes.
9. A storage cell, comprising bistable field effect transistor means including a source, drain and gate electrode with said gate electrode arranged to form a Schottky contact with the semiconductor substrate of said transistor means, said semiconductor substrate exhibiting at least within the semiconductor region thereof which may be affected by potentials applied to said gate electrode, a sufficient density of deep energy traps such that the interaction between the charge carriers thereof and said traps may assume either of two stable states so as tO thereby provide a non-volatile bistable impedance characteristic between said gate electrode and one of said source and drain electrodes.
10. The storage cell as set forth in claim 9 including control means coupled to said gate electrode so that when the impedance between said gate electrode and said one of said source and drain electrodes is switched to one stable state thereof a first potential is applied to said gate electrode to provide a first impedance between said source and drain electrodes and when the impedance between said gate electrode and the said one of said source and drain electrodes is switched to the second stable state thereof a second potential is applied to said gate electrode to provide a second impedance between said source and drain electrode.
11. The storage cell as set forth in claim 10 wherein said control means includes both resistance means coupled between a source of potential and said gate electrode and pulse source means coupled to said gate electrode to control the impedance state thereof.
12. The storage cell as set forth in claim 9 wherein said gate electrode is rhodium and said semiconductor substrate is gallium arsenide.
13. The storage cell as set forth in claim 9 wherein said semiconductor substrate comprises silicon doped at least within the said semiconductor region which may be affected by potentials applied to said gate electrode, with a substance which creates said deep energy traps.
14. The storage cell as set forth in claim 13 wherein said silicon is doped at least within said region with at least one substance of the group platinum, nickel, gold, iron, manganese, mercury, chromium, silver, copper, zinc, and cobalt.
15. The storage cell as set forth in claim 11 wherein said semiconductor substrate comprises silicon doped at least within the said semiconductor region which may be affected by potentials applied to said gate electrode, with at least one substance of the group platinum, nickel, gold, iron, manganese, mercury, chromium, silver, copper, zinc, and cobalt.
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种动态抑制功率半导体器件关断过电压的电路 | 2020-05-08 | 961 |
| 用于臭氧气体传感器的气敏传感器件以及制备方法 | 2020-05-08 | 118 |
| 标准制造工艺的光调制器 | 2020-05-11 | 387 |
| 双选导电类型双括号栅控源漏阻变式晶体管及其制造方法 | 2020-05-12 | 266 |
| 一种变频器故障保护装置及变频器 | 2020-05-11 | 935 |
| 混合升压转换器 | 2020-05-12 | 243 |
| 结晶性半导体膜和板状体以及半导体装置 | 2020-05-13 | 212 |
| 具有源极镇流的碳化硅金属氧化物半导体场效应晶体管 | 2020-05-11 | 54 |
| N型半导体器件及其制造方法 | 2020-05-12 | 120 |
| 一种基于氮化镓/铝镓氮异质结的磁场传感器 | 2020-05-14 | 72 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
分析报告
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
肖特基晶体管热门专利
QQ群二维码
意见反馈
意见反馈