Semiconductor optical amplifier device
专利汇可以提供Semiconductor optical amplifier device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain an optical amplifier device which operates with high output by setting the reflection factor of each waveguide end to less than a specific percentage, increasing injected carrier density from an input end to an output end, and increasing the carrier density of the optical amplifying device toward the output side.
CONSTITUTION: When the reflection factor of each waveguide end is ≤1%, the injected carrier density dependency of a gain spectrum increases in the injected carrier density and the wavelength λ
p at which the gain by band filling becomes maximum shifts to the short-wavelength side. When incident light is denoted as λ
in , the relative wavelength difference Δλ=λ
in -
λp from λ
p increases as the injected carrier density n
c is increased. Then, the gain saturation coefficient is decreased as Δλ increases. Namely, the least saturation is obtained when the carrier density is maximum, so high output is expected. For the purpose, the injection density is made small on the light input side where the light intensity is low and increased toward the output end where the light is intense to generate a light output which is saturated in gain by using an optical amplifier 11, a diffraction grating 12, and a power meter 13. Therefore, the optical amplifier device which outputs with high output is obtained.
COPYRIGHT: (C)1991,JPO&Japio，下面是Semiconductor optical amplifier device专利的具体信息内容。
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