Dry etching device
专利汇可以提供Dry etching device专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain the dry etching device having high treating capacity by arranging a cylindrical etching chamber having a gas supply tube and a gas exhaust tube with its axis horizontally and mounting covers holding semiconductor wafers at both opening ends inside while sealing the covers. CONSTITUTION:The cylindrical etching chamber 1 having the gas supply tube 2 internally projected and the gas exhaust tube 3 at a cylindrical wall confronting the tube 2 is arranged with its axis horizontally, and the covers 4 holding the semiconductor wafers 5 at both the opening ends by means such as electromagnetic chucks or the like are mounted with the wafers 5 disposed inside. Thereafter, the chamber 1 is evacuated to a vacuum, a high frequency voltage from the power source 6 is applied to the confronting covers 4 to thereby produce reactive ions, and the wafers 5 are etched. Or the voltage is applied from the power source 6 to a plasma exciting coil 7 wound on the outside of the chamber 1 without applying the voltage to the covers 4, and the wafers 5 are etched by the plasmas thus produced in the chamber 1.，下面是Dry etching device专利的具体信息内容。
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