Semiconductor laser
专利汇可以提供Semiconductor laser专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain a modulated output having high power and high extinction ratio by a method wherein a region cyclicly changing no refractive index is provided on the extended line of a part changing refractive index in a distribution feedback-type semiconductor laser providing an active layer or a layer adjoining the active layer with a part cyclicly changing refractive index along the travelling direction of light.
CONSTITUTION: An N type Ga
u In
1-u As
v P
1-v waveguide path layer 2, an undoped Ga
x In
1-x As
y P
1-y active layer 3, a P type Ga
p In
1-p As
q P
1-q buffer layer 4, a P type InP layer 5, and a P type GaInAsP cap layer 6 are grown on an N type InP substrate 1 while forming x>u, p, y>v, q. At that time, corrugation 7 giving a cyclic change in refractive index is provided on a part of the surface of a substrate 1 and no corrugation 7 is provided on the extended surface. After that, an electrode 9 for laser is provided on the location of the layer 6 conforming to the corrugation 7 and a light amplifier or an electrode 10 for light modulation is provided at the position having no corrugation 7 and the end face of the electrode 10 side is covered with a nonreflective sealing film 8.
COPYRIGHT: (C)1983,JPO&Japio，下面是Semiconductor laser专利的具体信息内容。
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