Semiconductor laser array and manufacture thereof
专利汇可以提供Semiconductor laser array and manufacture thereof专利检索，专利查询，专利分析的服务。并且PURPOSE: To prevent the deterioration in the laser characteristics due to the slips in the oscillation wavelength and the gain peak from occurring by a method wherein mesastripes in different widths are formed on multiple regions on a substrate while active layers etc., including quantum well layers are formed cn the mesastripes by specific process.
CONSTITUTION: A diffraction lattice 100 in specific thickness is formed on an n-type InP substrate 11. Next, multiple mesa stripes 35, 36 in different widths of S
1 , S
2 are formed by photolithography in the perpendicular direction to the lattice 100. Next, an InGaAsP photowaveguide layer 12, an InGaASPMQW active layers 31, 32 and a P-InP layer 14 are successively formed on the mesa substrate by liquid epitaxial deposition process. At this time, the thickness of the layers on the mesastripes 35, 36 thinner than that of flat parts is notably dependent upon the widths of the mesastripes 35, 36 while the thickness of the quantum well layers included in the active layers is also differentiated in respec tive regions on the substrate 11. Through these procedures. the slips in the oscillation wavelength and the gain peak can be prevented from occurring so that the laser array in the least dispersion in characteristics may be displayed.
COPYRIGHT: (C)1990,JPO&Japio，下面是Semiconductor laser array and manufacture thereof专利的具体信息内容。
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