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Optical storage device using piezoelectric read-out

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专利汇可以提供Optical storage device using piezoelectric read-out专利检索,专利查询,专利分析的服务。并且Apparatus and methods are described which utilize the dimensional changes of a piezoelectric material in response to an electric field impressed thereacross to retrieve optically an information pattern. In a preferred embodiment, a crystal such as bismuth germanium oxide is used because it has both a photoconductive, field-storage capabiltiy and a large piezoelectric effect. Information can be read into such a material optically, stored by means of a spatially varying internal electric field impressed thereacross, and subsequently optically read-out using the piezoelectric effect. Read-out is accomplished by sensing the modulation of read-out light caused by surface deformations on the crystal due to the internal electric field.,下面是Optical storage device using piezoelectric read-out专利的具体信息内容。

1. A light readable device comprising: a. a piezoelectric medium which undergoes dimensional change in response to an electric field impressed thereacross; b. means for impressing an electric field across said piezoelectric medium, said electric field being representative of information; c. means for illuminating said piezoelectric medium with readout light; and, d. means for sensing modulations of the read-out light caused by dimensional changes in said piezoelectric medium.
2. A device of claim 1 wherein said means for impressing an electric field includes a photoconductive medium, means for impressing an electric field across said photoconductive medium and said piezoelectric medium, and means to illuminate said photoconductive medium with a pattern of light representative of said information.
3. A device of claim 2 wherein said means for illuminating with read-out light comprises means for reflecting collimated light from the surface of said piezoelectric medium.
4. A device of claim 3 wherein said photoconductive medium and said piezoelectric medium comprise separate materials positioned in electrical contact with each other.
5. A device of claim 4 wherein said photoconductive medium and said piezoelectric medium are positioned in a contacting, continuous, face-to-face relationship.
6. A device of claim 5 wherein said device has the capability of storing the electric field representative of information.
7. A device of claim 6 wherein said photoconductive medium has field-storage capability.
8. A device of claim 6 wherein said piezoelectric medium serves as a blocking layer to store an internal electric field thereacross.
9. A device of claim 2 wherein said photoconductive medium and said piezoelectric medium comprise the same material.
10. A device of claim 9 wherein said photoconductive, piezoelectric medium comprises bismuth silicon oxide or bismuth germanium oxide.
11. A device of claim 10 having an insulating layer on each side of the piezoelectric, photoconductive, field-storage material.
12. A storage device comprising: a. a piezoelectric, photoconductive, field-storage medium; b. a reflecting electrode positioned on the read-out side of said medium; c. an insulating layer in intimate contact with one face of said medium; d. a transparent electrode positioned on the read-in side of said medium; and, e. means to apply a voltage across said medium.
13. A device of claim 12 wherein said piezoelectric, photoconductive, field-storage medium comprises bismuth silicon oxide or bismuth germanium oxide.
14. A device of claim 13 having an insulating layer positioned between said reflecting electrode and said piezoelectric, photoconductive, field-storage medium.
15. A device of claim 13 having an insulating layer positioned between said transparent electrode and said piezoelectric, photoconductive, field-storage medium.
16. A device of claim 13 having insulating layers positioned between both of the reflecting electrode and the transparent electrode and Said photoconductive, piezoelectric, field-storage material.
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