Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To highly integrate an IC in a high density by removing a single crystal silicon substrate by polishing from the bottom of the substrate until the polycrystalline silicon layer in a U-shaped slot is exposed and forming an insular region of single crystal silicon isolated to polycrystalline silicon layers. CONSTITUTION:An SiO2 insulating film 30 is formed on a substrate surface by high voltage oxidizing method. Then, a thick polycrystalline Si layer is grown on a single crystal Si substrate 21 by a normal CVD method, the surface of the polycrystalline Si layer is planely polished, V-shaped slots 26 and U-shaped slots 27 are buried on the substrate 21, thereby forming a polycrystalline Si layer 31. Then, the substrate 21 is planely polished by normal copper-plating polishing technique until the substrate 21 is exposed at the polycrystalline Si layer 31 of the entire substrate surface in the U-shpaed slot 27 from the bottom. In the state that the substrate is inverted upon completing of polishing, a plurality of single crystal Si insular region 21' in which an N type b layer 29 is formed and isolated from each other through the film 30 on the surface of the layer 31 to complete the buried insulating layer isolating substrate 32.，下面是Manufacture of semiconductor device专利的具体信息内容。
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