Semiconductor integrated circuit device
专利汇可以提供Semiconductor integrated circuit device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain switching transistors connected in an anti-parallel manner and reduced in an element occupying area by forming the transistors and diodes in a sole isolated insular region.
CONSTITUTION: A parasitic diode is composed in a region interposed between a channel diffused region 32 and a drain wall 31 to perform as a function of a diode 19 reversely biased as it is. That is, the region 32 and a high concentration P-type diffused region 34 has the function of the anode region of the diode 19, and an isolated insular region 4a and the wall 31 have the function of the cathode region of the diode 19. Accordingly, a MOSFET 18' is formed in the region 4a thereby to substantially form the diode 19. Thus, since two elements are formed in the region 4a, its occupying area is reduced by half.
COPYRIGHT: (C)1990,JPO&Japio，下面是Semiconductor integrated circuit device专利的具体信息内容。
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