Rectifier element
专利汇可以提供Rectifier element专利检索，专利查询，专利分析的服务。并且PURPOSE: To improve efficiency by using an IGFET as a rectifier element and reducing the loss of a MOSFET type rectifier element than a usual transistor.
CONSTITUTION: If a voltage and polarity detecting circuit 30 which detects the potential difference between a source terminal 5 and a drain terminal including its polarity and sends signals corresponding to the plus or minus of the potential difference to a terminal 10 and a circuit 9 which changes the substrate potential 8 to the source potential or the drain potential according to the signals electrically are provided in the same pellet with a MOSFET, and the correspondence of the signals of the detecting circuit 30 and the operations of the changeover circuit 9 is set previously, the circuits function as a rectifier element. In this case, the connecting point 31 of the detecting circuit 30 with the terminal 5 and the connecting point of the circuit with a terminal 6 are insulated with each other. If an enhancement MOSFET and the drain current line type area of an IGFET are used in this construction, forward loss is little and switching loss is also little. Further, the drain voltage has positive temperature dependence and thermorunaway rarely occurs.
COPYRIGHT: (C)1980,JPO&Japio，下面是Rectifier element专利的具体信息内容。
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