专利汇可以提供ELEMENTARY ELEMENT专利检索,专利查询,专利分析的服务。并且The present invention designs an elementary element which operates by low-energy particles less susceptible to influence on an S/N ratio by the particles pseudo-one-dimensionally structuring a particle movement portion of particles including electromagnetic waves, electrons, holes, atoms, and molecules between emission and absorption sources of the particles. The present invention designs an elementary element which comprises a modification portion for allowing the particle movement portion coming and going of particles between another elementary element and the elementary element, an interaction, a chemical reaction, and the like between these particles, and time dependent mechanical/electromagnetic force, and controls the emission/absorption of low-energy particles less susceptible to the influence of atomic/molecular species of a constituent material of the particle movement portion, the stereo structure or lattice thereof, the disorders thereof, or the heat of the device thereof on the S/N ratio, and a device constructed from a plurality of elementary elements, which enables much better readiness of a catalytic action not only to control electrons and holes of a transistor and the oxidation-reduction reaction of a fuel cell but also to control the input/output of neutral or ionized atoms than conventional catalysts, tolerance to external field noise including external radiation, and a reduction in energy consumption required to operate the transistor and the like at low temperatures. A device, a module, and a system are constructed from elements including the elementary elements and others.,下面是ELEMENTARY ELEMENT专利的具体信息内容。
The present invention relates to that in an elementary element having an emission source and an absorption source of particles including electromagnetic waves, electrons, holes, atoms, molecules and the like, the elementary element comprises modification portions for allowing the particles of the elementary elements coming and going among other emission sources and other absorption sources of other elementary elements, for allowing an interaction, a chemical reaction, and the like among two or more these particles of the elementary element and the other elementary elements and for allowing time dependent mechanical/electromagnetic force, on the modification portions which face with either emission sources or absorption sources of the other elementary elements and/or in a space which is constructed from either the emission sources or the absorption sources of the other one or more elementary elements, controls the emission/absorption of low-energy particles less susceptible to the influence on an S/N ratio of atomic/molecular species of a constituent material of particle movement portions between the emission source and the absorption source, the stereo structure or lattice thereof, the disorders thereof, or the heat of the device thereof, and a device constructed from a plurality of the elementary elements, moreover, a device, a module, and a system constructed from elements including the elementary elements and others.
Electromagnetic waves or particles, etc. (thereafter, if particle species are not specified, those are abbreviated referred particles) beams use to analyze the physical and chemical structure of a sample by irradiating these beams, to perform a physical or chemical process by exposing to and/or irradiating a substance or as an energy source.
To analyze structures of materials, an electron beam is used in a scanning electron microscope, a transmission electron microscope, an electron beam lithography exposure, a thermionic emission electron gun, a field emission electron gun or the like. In the field emission electron gun, an electron emission area can be reduced in heating a radius 0.4µm of the cathode tip sphere to 1800K, what is more, an electric field applied to the electron emission area is ∼108 V/m, the electron beam is three orders of magnitude higher brightness compared to the thermionic emission electron gun. Moreover in the field emission (Schottky) electron gun cathode as well as the thermionic emission type, Schottky shield, a first and a second anodes have to be heated. And using a pierce type electron gun structure having a self-focusing characteristic electron stream of concave shaped cathode, a thermal electron stream of the concave shaped cathode is focused as a laminar flow. The thermal electrons emitted from heated cathode of the pierce type electron gun, by applying an acceleration voltage between the concave shaped cathode and an anode, are drawn from a hole of the anode, but like as a thermionic cathode electron gun, the concave shaped cathode has to be heated. (NPL1, NPL 2)
According to NPL 3, in the field emission (Schottky) electron gun using single walled or multi walled carbon nanotubes, a distance from the anode terminal to the cathode surface which is a tip of the single walled carbon nanotube at 1.6µm height from a cathode terminal and of 7.5nm radius is 2.13µm, and applying voltage ~30V between the anode terminal and the tip of single walled carbon nanotube makes a current up to ∼10-7 A per single walled carbon nanotube.
And particle beams have been utilized to perform the physical or the chemical processes, examples of those beams are in a molecular beam epitaxy, an ion beam lithography, an ion implantation and so on. For a focused ion beam, it is possible to process target materials in nano-order. The particle beams are also used to excite gases, control a discharge or use a plasma ignition.
Atomic/molecular particle beams are named as ion beams or radical beams according to way of charging. In the character of some beams, electromagnetic waves such as light waves and the like can be thinkable. As such beams polarization beams exist. Positrons can be in particle beams. It is conjecture in PTL 1 that the positrons are generated from ikosolids composed from plurality of trisoctahedrons.
As lower a temperature of conductor is, scattering of conduction electrons due to lattice vibrations or the conduction electron-conduction electron interactions is negligibly low. And a residual resistivity of the conduction electrons dominated by impurity scattering is usually remained. And an electric resistivity of perfect crystals having no impurity also varies greatly due to constituent atoms and crystal structures.
In random potential fields, if a size of two or less spacial dimensional conductors is large, its electric conductivity becomes zero according to Anderson localization (NPL 4).
Pseudo-one-dimensional systems having a narrow cross-section area perpendicular to a conduction direction described below are in a three-dimensional system, therefore no Anderson localization occurs.
Increasing an impurity concentrationcin the three-dimensional system and closing a temperature of the system to absolute zero, wave-functions of the conduction electrons in the three-dimensional systems are usually localized, so the wave-functionΨcan be approximated withexp(-r/ξ (c)). Hereris a position variable of the wave-function, and ξ(c) is an attenuation coefficient atc. The conduction electrons moving along a system sizeLconduct electrically without localization when L is smaller thenξ(c).
In case that, at the absolute zero temperatureT = 0, a density of state of the conduction electrons in the three-dimensional conductor is assumed to be that of free electrons, a correlation wave-function, which is represented by off-diagonal r' = 0andr > 0positions for two different wave-functions of the free electron times the density of state for the free electron multiplied by Fermi distribution function at T = 0, is that of a spherical wave for the free electron which decays as inverse square of a sphere radiusr, but the spherical wave-function of free electron is not disturbed by the temperature. Herer'is the position variable for one of the two wave-functions. But ways of attenuation manner for the correlation wave-function are more greatly varied by the density of state for the conductor which depends on atomic species making up the conductor. A wave-functionΨpseof the conduction electron in the pseudo-one-dimensional system similarly attenuates as the ways of attenuation manner for the correlation wave-function. Ψpsedepends on the density of states of the conduction electrons for the conductor in the pseudo-one-dimensional system, however, when cis large, Ψpsealso decays asexp(-x/ξpse (c)). Herexis a variable along a conducting direction of the conduction electron. The correlation wave-functionΨof the conduction electron in the pseudo-one-dimensional system is attenuated in same way asΨpse.
When the temperature of the pseudo-one-dimensional system is increased, the electric resistivity of the conductor is subjected to scattering of the electron-electron interactions that depend on the lattice vibrations and differences in the constituent atoms, so that the decay of amplitude for the correlation wave-function of the conduction electron occurs. Therefor ξ(c)is a function ξ(c,T) of the temperatureT(NPL 5). As a result, values of the electrical resistivity for the conduction electron vary greatly in magnitude relation among ξ(c, T) , Land an elastic scattering length leof the conduction electron. But considering about ξ(c,T), in which the elastic scattering among the conduction electrons has been considered in the density of state used in numerical calculation for the correlation wave-function of the conduction electron, following cases can be considered.
{Math. 1}
{Math. 2}
{Math. 3}
It is, moreover, necessary to consider a similar comparison betweenLand
As described above, attenuations of the conduction electron depend on the atomic species and stereo structures constituting the conductor except the particle beams and on the temperature of the conductor, and on the impurity concentration of the conductor, therefore, in the above mentioned system, the attenuation coefficient of the wave-function of the particle beams in the conductors dependingcis determined.
Electromagnetic waves, neutral/charged atoms or electron beams emitted from a beam emission/absorption element (hereafter, an element is used in order to specify differences from the elementary element of the present invention) are in a bad S/N ratio of the particle beams, because flows of the particle beams are disturbed by lattice vibrations due to the heat in the particle beam emission/absorption element. In addition, through disturbances due to Coulomb and correlation interactions between charged/neutral particles in the particle beams, due to impurities in the particle beam emission/absorption element, and due to external fields and other particle flows around in the particle beam emission/absorption element the S/N ratio becomes worse, but flow rates of the particle beams are determined by depending on the atomic species constituting the particle beam emission/absorption element. Through the lattice vibrations in the particle beam emission/absorption element or the disturbances due to the impurities and disorders of the atomic/molecular configurational structures in the particle beam emission/absorption element, each energy state of the particle in the particle beams has a width, which is calculated in the quantum mechanics. A thermal noise of the particle beam emission/absorption element causes a transition between energy levels of each particle in the particle beams. An influence of the S/N ratio owing to the heat of the particle beam emission/absorption element is determined by the temperature of the particle beams emission/absorption element and is small at low temperature.
A negative Electron Affinity(NEA) device, whose interface easily emits electrons as low-kinetic-energy particles, is found. It can be used as NEA photoelectric surface, secondary electron surfaces, cold cathodes and so on. According to NPL 6, it is possible to decrease the emission area size of NEA cold cathode to an extreamely small one, moreover, to place many NEA cold cathodes adjacent each other and to control emitting electron flows by bias currents, for the sake of this flow control, the NEA cold cathode can control the electron beam quickly and an energy consumption of the NEA cold cathode is much less than that of the thermoionic cathode electron gun having parts applying an acceleration voltage between the cathode and the anode to thermoelectrons emitted from the heat cathode. Because of stable the NEA surfaces being required, an emission efficiency and a life-time of NEA device becomes many problems awaiting solution.
Although a photoelectric surface dose not respond to a long wavelength limit, the NEA device has no longer the long wavelength limit. In the case of the heated cathode a negative voltage control electrode, an accelerating electrode and a beam limiting aperture, which are not required in the NEA device, are necessary. The NEA device, however, needs the stable NEA surface, so that the NEA device rises problems about the efficiency and the life-time of it. High brightness and low emitance photo cathode for a spin-polarized electron source, in which the NEA surface is required, has the above mentioned problems. On the other hand, a photo cathode for spin-polarized electron source using GaAs crystal of PEA (Positive Electron Affinity) surface of pyramid, that dose not require the NEA surface, is found. The GaAs crystal of the PEA surface of the pyramid is irradiated by a circularly polarized laser, particular spin electrons are excited selectively from a valence band into a conduction band. While the particular spin electron group are disturbed by thermal noise in the GaAs crystal before being emitted from the PEA surface, a quantum efficiency and a spin polarization of the particular spin electron are enhanced by the tunnel (NPL 7).
A thermoelectric conversion that utilizes each working substance having a polarity of charged particle in its own conductor both carring its own thermal energy and changing an electromotive force difference in its own conductor and is an element by converting the thermal energy into an electrical energy and vice verse. It is possible for the element to generate the electrical energy from a waste heat, or to heat or to cool materials by applying an electric current to the element. Thermoelectric conversion element, which improves a figure of merit of the thermoelectric conversion, utilizes the electromotive force due to thermoelectric materials in the thermoelectric conversion element and is aimed to control a thermal noise distribution occurring only in velocity distributions of the working substance moving in the psedo-one-dimensional motion through the psedo-one-dimensional parts(PTL 2, PTL 3). The sources of the working substance are conductors and semiconductors in an electric circuit.
An environmental and energy technology represented in a fuel cell and a purification for automobile exhaust gas, where the source of particles being not a conductor is taken as an example, are essential to the human society in the 21st century, in order to achieve both an energy supply and an environmental conservation. An electrolyte used in the fuel cells is classified into five such as an alkaline type, a solid polymer type, a phosphoric acid type, a molten carbonate type and solid oxide type fuel cells, and features and drawbacks in each electrolyte are different. It is having been atracting that with multifunctional advances of portable small electronic devices a power source of the portable small electronic devices is going to replace a lithium battery with micro polymer electrolyte fuel cell (PEFC) of about several tens Ws.
In direct methanol fuel cells (DMFC) making use of a very high net energy density of methanol, on a membrane electrode assembly(MEA) in contact with a methanol aqueous using the methanol aqueous and an oxygen gas, a methanol oxidation rate is slow evenwhen a large amount of precious metal anode catalyst is used. And a reduction of the life for an alkaline electrolyte because productions at CO2 emission in the anode contact with the alkaline electrolytes using solutions of potassium hydroxide and the like, those of a resistance overvoltage, a concentration overvoltage and an activation overvoltage and so on due to poisoning or a penetration reduction of the methanol into the alkaline electrolyte and the like are required.
Both PEFC, which operates from the room temperature to 100°C, and a methanol fuel cell (MFC) have MEA that is a constructed polymer electrolyte membrane (PEM) sandwiched in two electrodes made from a porous support layer + anode catalyst layer and a porous support layer + cathode catalyst layer. Of sandwiching the MEA in the separator a fuel cell unit is composed. In PEM of PEFC operating with a hydrogen gas and oxygen in air at the MEA, it is necessary to be humidified in order to maintain a proton conductivity of the polymer electrolytes, an improvement of the PEM operating in no or low humidification, that of isolation properties of the hydrogen gas crossing over PEM and management of produced water in MEA contacting with the air, however, have been required.
Thus, for the catalyst layer being one of the most important factor materials in MEA, higher catalytic activities for a reaction of interest, higher electrical conductivity, lower corrosion, and less poisoning are required.
Since it has been shown that metal nanoclusters having a diameter up to several nanometers activate oxidation reactions using oxygen, catalyst of the oxidation reactions, in which the oxygen is an oxidizer, is vigorously developed. It is found that an active point being 10nm or less diameter of precious metal nano-particles becomes "metal catalyst". Oxidizers such as metal oxides, which have been conventionally used, are generally highly toxic, so more untoxic oxidizer has been required. In the oxidation reaction using an oxygen gas as the oxidizer, a by-product is water only, so the cleaner reaction can be realized. Moreover, the catalyst of the oxidation reaction of alcohol with the oxygen gas, in which gold catalyst is immobilized to or included in polymers, is not only easy to handle at high activity, but also has advantages such as recovery, re-used and the like. That makes the advantages of the catalyst be in green (environmentally friendly) ones. Further, by taking advantage of the property that a variety of metals by mixing two kinds of metals obtain new characteristics, a bimetallic nanocluster catalyst composed of gold and platinum is immobilized to a polymer, so more highly activity catalysts are synthesized. In a combination of gold and platinum and that of gold and palladium, even when a same alcohol is used as a raw material, in the former an aldehyde, and in the latter an ester are obtained selectively (NPL 8).
Hence the metal nanocluster and the anode and the cathode catalyst layers used in a fuel cell have been mainly described, Hidehiro Sakurai associated professor of Moleculare Science Institute reports that the metal nanoclusters may have typically three kinds of following characteristics, exactly:
On the other hand, oxide ionic electrolytes used in typical solid oxide fuel cells (SOFC) are often in a fluorite structure. CeO2, ThO2, CaF2, ZrO2, HfO2 and the like take the fluorite structure from room temperature to their melting points. Alkaline earth oxides such as CaO and the like or rare earth oxides such as Y2O2 and the like, that are guests in the solid oxide hosts, maintain solid solutions in wide ranges of guest concentration. Even if various types of lattice defects occur in basic fluorite type structures, it is known that the basic fluorite structures probable maintains each original structure (NPL 9).
Under the assumption that even if some ions of the host in the oxide ionic electrolytes being in the fluorite structure are replaced with the guests, the oxide ionic electrolytes maintain the fluorite structure, a first approximation Helmholtz free energy from which concentrations of vacancies in the oxide ionic electrolytes concerned with oxygen ion conductions are obtained, dependence of the nearest neighbor interactions among constituting atoms and by using the first approximation Helmholtz free energy the various concentrations of the oxygen vacancies are numerically calculated (NPL 10, NPL 11).
Unlike the conduction mechanism of conventional oxide ion conductors, as an electrolyte material for SOFC the oxygen ion conductor is expected to operate in an intermediate temperature range between 400 and 600°C. Oxygen ions in 2a sites arranged in the c-axis direction of an apatite lanthanum silicon oxide being the oxigen ion conductors contribute to an oxygen ion conduction. From electrical transport properties at high temperatures and a defect chemical model, an equilibrium of opposite Frenkel defects which affect the ion conduction properties is investigated. The apatite type lanthanum silicon oxide is found to be an ideal solid electrolyte. Partially replacing lanthanum with neodymium in the apatite type lanthanum oxide, moreover, an electronic conduction appears, that is not founded to be understand only by the classic defects equilibrium theory (NPL 12). And in non-experience method of band calculation of a single crystal of Nd9.20(SiO4)6 replacing lantern with neodymium by using WIEN2k, whose method is (L)APW+lo extend linear expansion plane wave method to localized orbitals, it is confirmed that very small electronic conductions occur.
Unlike the fuel cell, batteries and accumulators are as examples of a storing energy. In the batteries of the former two electrodes, in which the several electrolytes are put, are furnished with circuits of external loads and with those to cause oxidation and reduction.
On the other hand, the diamond has so large band gap(5.5eV) that it becomes in a negative electron affinity (NEA) state where the bottom of its conduction band can be easy to exceed the vacuum level. In cause that electrons excited in the conduction band can freely pop into a vacuum, an electron emission state can be apt to occur. Hydrogen termination on the diamond surface makes the conduction electrons become in NEA, and oxygen termination makes the conduction electrons in the positive electron affinity (PEA).
As examples of the particle beams applying Math. 1 to 3 to the three-dimensional system; - the devices, which control electrons and holes by using the electric fields, are existing many such as a field effect transistor, a transistor, a diode, a condenser, and the like. The device that controls the spin polarization by using magnetic field is in PTL 4. In this patent litterateur, the spin polarization in materials jointing a ferromagnetic layer and a ferroelectric layer together to lattice mismatch ratio of 5% or less can be varied by applying a voltage to the materials.
A particle beam except the particle beams which are determined by Math. 1 to 3 described above do exist in the elements. Physical properties of the elements are greatly changed by species of atoms and/or molecules included in the element. In forming parts for the particle beams, which are surrounded by their respective outer wall of the element in order to block external disturbances, volumes of the forming parts for the particle beams may change. The movement portions where particles of the particle beams move are made of,
Taking account of considering each volume change_of the composition portions in A-1 described above, its respective concentration change of atoms and molecules contained therein, change of temperature and the like, an investigation for the particle beam flow in the system is analyzed by using (Math. 4) described below (NPL. 13).
In a transport equation of irreversible process for neutral and/or charged atoms, heat and electrons, the following equation between phenomenological responses for all the fluxesJiof an i specie for the neutral or the charged atoms, the heat, the electrons and so on, and its generalized thermodynamical force xjis assumed as
A gradient of an applied temperature causes the generalized thermodynamical force associated with a heat flow, or again a gradient of chemical potential does a generalized thermodynamical diffusion force; the heat flow which is diffusion responses corresponding to the former is the thermal conductivity, the latter is diffusion coefficients of the material flows. That is, parts of the matrixLwhich consist of Lij are composed of diagonally which link respective each generalized thermodynamical force with its conjugate flux. Off-diagonal coefficientsLijdetermine effects of the generalized thermodynamical force on a nonconjugated flux (examples: electromigrations, the thermoelectric material).
Features of the irreversible process are in an entropy production. With the aid of an entropy production rateσ, a heat generation rate of energy dissipation is represented as
In addition, each of theispecie charged or neutral charged atoms and/or molecules receives the forceFidue to its respective amount of electric chargeqiin electromagnetic fields and the force generated by concentration gradients.
Elastic deformations and the flows in the above A-1 and A-2 have been studied in Rheology, and fluids containing turbulent flows in the above A-2 have been studied in fluid mechanics of liquid or gas. For example,
In PTL 5, after positive ion particles being in a monochromatic kinetic energy and a mono direction motion, the neutral charged particle beams are tried to have been made from the positive ion particles efficiently combined with electrons in eliminating most of a relative speed between the positive ion particles and the electrons. Here, it is exhibited that both a charge exchange and an elastic scattering cross-sections between the positive ion particle and the electron depend on the value of the positive ion particle energy, it have been used that the relative lower speed makes the probability of the charge exchange reaction or a combination reaction higher. In NPL 14, by using the fact that less energy is needed to neutralization of negative ion particles, the charge exchange between the negative ion particles and the neutral charged gaseous molecules creates the neutral particle beams. - Moreover, particles in the particle beams of low-kinetic-energy are scattered by target atoms, molecules and the like and affect only marked surfaces of the target sample. Using these they are utilized to examine a state of the marked surface, but it has been used that the particles in the particle beams examining the state of the marked surface have a different kinetic energy which is said to be the low-kinetic-energy, for example, the kinetic energy in ISS is less than a few keV, in this case the particle beam direction is close parallel to the marked surface of the target sample, in lEED is about 100rev, in the plasma is about 50eV, and in the cold neutron is about 5meV.
The particle beams are used to examine physical properties of a sample which is exposed to and/or irradiated by them, or to modify physicochemical properties and/or shapes of a material with the same way. Devices in which parts adjusting a flow amount of an emitted particle are included and in which parts controlling the flow of particles near an absorption part are included as in a tunneling microscope, a transistor in which an input/output of the particle beams are controlled by equipping an emission source end another absorption source end and a part to control of the particle beam flow, and photoelectric devices having emission source ends secondary particles by absorbing incident particles and/or absorption source ends of emitting secondary particles exist. The common part of those operations in the devices, the transistor and the photoelectric devices are an element used in many areas.
By being in better S/N ratio of the particle beams which have passed through elements, it is possible to determine even more detail the physicochemical properties of objects which are exposed to and/or irradiated by the particle beams or those of the source emitting the particle beams. Moreover, irradiation damages of sample exposed to and/or irradiated by the particle beams can be reduced, and energy required in order to manufacture high quality materials in cryogenic temperature can be also more reduced.
Through the elements, moreover, transistors controlling the input/output control due to having input/output controls of diffusion flows for electrons and holes between absorption source and emission source ends and fuel cells doing hydrogen, oxygen and the like ions which are controlled by, needless to say, catalytic actions doing neutral charged or ionized atoms and molecules are in much more rapid responsiveness and durability for external noise including external radiant rays than the conventional catalytic action and the like. And it is also possible to much more reduce energy required to control than the conventional transistor or the like in being at low temperatures.
The present invention, without causing poor S/N ratio by complex controls and overheating of the cathode portions such as a thermal electron beam generator, makes errs lower due to a particle number distribution caused in a process of a low-energy-particle emission or absorption end and/or errs in the cause of angular directional and kinetic energy distributions for particle beams, due to the constituent atoms and/or molecules of the elements and due to their heat alternatively, makes the elements (hereafter, as in the Technical Field, the elements are represented by the elementary element), controlling emission and absorption of low-energy particles much suppress an influence to S/N ratio such as high quantum efficiency and the spin polarization. By use of devices, modules made of plural the elementary elements and systems composed of the devices, the modules, and/or an elementary element module composed of the elementary element constructions are intended economically to be created.
Conventional particle beams require a heat source in order to create the particle beams, and do not reduce their thermal energies in a movement portion to the emission source end. Owing to large values of area for the emitting and the absorption source ends of the particle beams, the S/N ratio of the particle beams become worse by worse S/N ratio due to controls of the particle beams and like.
The emission source or the absorption source of electrons or holes flowing in electronic devices made of a transistors and the like are made of a conductor or a semiconductor or the like, those of a working substance flowing in a thermoelectric conversion element do conductors, semiconductors, a macroscopic quantum system or the like, or those of reaction and/or generation species of metal nanocluster and so on are the metal nanoclusters and the like, for instance. So many types of emission source or absorption source of particles are in so many different.
In a particle movement portion in which Particles of Particle Beams flow, flows of Particle Beams splinting, mixed with other Particle Beams, modified by a shape processing and/or changed by a chemical reaction are protected by an outer wall of the particle movement portion from external materials, form poisoning such as reaction and generation species and the like and external disturbances. The above reformations of the splinting, the mixing, the shape processing and/or the chemical reaction could be protected by the outer wall deforming with time. Collections of atoms and/or molecules and the like in which flows of Particle Beams develop are defined as assembly.
In case that structural phase transitions and/or dislocations and so on., large changes such as compositions, structures, placements and the like do not occur in the assembly, allowed energy states of Particles of Particle Beams for the assembly in the outer wall of a certain shape are determined by the quantum mechanics.
Particles of Particle Beams are distributed in the allowed energy states, if energy intervals of the allowed energy states are wider, it is difficult for Particles to change between the states(See Math. 1 to Math. 3). In addition, a high speed diffusion path of a grain boundary, a columnar layered porous structure, a lamellar structure and the like or the outer wall formed such as a polymer electrolyte membrane(PEM) or cell membranes make movements of Particle Beams limit to one direction.
Particle Beams in the outer wall of the elementary element as described above are in the geometric shape characterized by the lengthLparallel to a flow direction of Particle Beams and the cross-section areaSperpendicular to the flow direction. In the outer wall
Since Particle Beams may be made of neutral charged atoms and/or molecules, on the outer wall
In the "Background Art", field effect transistors, transistors and the like in electrical components are described as examples of the modification of Particle Beams on the route, however, one or more embodiments are illustrated as the examples of Particle Beams in the modification portion in accordance with the principles of the present invention, and are intended to illustrate the embodiments schematically together with the specification. Although these conceptional examples are described with an emphasis upon the nature of the invention, of course they are not intended to identify the invention.
Near-by reaction fields at the emission source and/or the absorption source and/or at the modification portions of each assembly, if necessary
are equipped with.
A plurality of the elementary elements, in some which the above described respective zero or more of Particle Beams reach its emission source and/or are emitted from the emission sources to its each respective aimed reactive fields as its aimed reactive species in its respective minimum distances and moreover in an optimal spatial arrangement of the other elementary elements where the productive and the raw species getting away from each aimed reactive fields do not interact each other, and in all of which the above described respective zero or more of Particle Beams and the productive and the raw species getting away beams flow in its each respective elementary element withSandLmaking the S/N ratio of its Particle Beam optimize, are defined as a device,
In the device
On an outer wall of the module
It is desirable that the support and/or connection members on the outer wall of the above mentioned modules are preferably common with the elementary elements, devices and systems.
In the "Background Art", catalytic reaction systems, field effect transistors or other kinds of transistors and so on which are made from electronic parts, a thermoelectric conversion element, fuel cells, batteries, an electron gun and so on have been described, the device or the module corresponding to these illustrate one or more embodiments in accordance with the principles of the present invention, and together with the present specification, are illustrated such an embodiment schematically. The conceptual example of the present invention is in the description that emphasizes an essence of the invention but are not intended to identify the present invention.
The outer wall and the assembly described above are the elementary element, designs of controlling Particle Beams flow limited in the outer wall of the elementary element can be classified as follows.
The assemblies in the above mentioned a ~ d can be designed as follows.
In the assembly including impurities, disturbances of atoms and/or molecules and disorders existing in an interface of the crystalline structure near-by touching both inner-parts of the outer wall protecting and separating Particle Beams from the external world and so on, and the thermal motion of the assembly make the allowed energy levels of Particles in Particle Beams have complicately wide.
In the assembly disturbed only by the thermal motion, even if the structures of the constituent atoms and/or molecules touching near-by the inner parts for the outer wall of the cross-section perpendicular to direction of Particle Beam flow, are in disorder, the energy states allowed for Particle of Particle Beams flows are completely determined by the quantum mechanics.
The lowest energy level for the assembly of the elementary element having the lengthLparallel to the pseudo-one-dimensional ballistic conduction and having the cross-sectional areaSperpendicular to that determines the value ofSat the center of which existence probabilities of Particle are large and at that of which the lowest energy level is less susceptible to influence of disturbance by the disorder of the constituent atoms and/or the molecules at a periphery of the cross-section area.
In case that the intervals between the unoccupied states and the occupied states of the energy levels of Particle in Particle Beams moving in the assembly being in size ofLandSis larger than thermal energy of the elementary elements, the energy state of Particle in Particle Beams is better S/N ratio than that of Particle Beams in the assembly that square root ofSis grater than nano-order.
At the particle movement portions in the assembly, Particles of Particle Beams interacting each other and with lattice vibrations and so on are in diffusive conductions, but the cross-sectional area becomes narrow so the motion of Particles of Particle Beams is in the pseudo-one-dimensional movement.
In case that the cross-sectional area becomes still more narrower and that attenuation coefficients of Particle moving parallel to the lengthLare one or more orders of figures shorter than those, Particle Beams may be in the pseudo-one-dimensional ballistic conduction. In the ballistic conduction effects on Particle Beams by impurities which are constituent atoms, molecules and so on in the periphery of the cross-section, are negligible, the S/N ratio is further more improved.
Therefore, an optimal design of nano-order or more the assembly inside which the impurity concentrationcexists and in which the pseudo-one-dimensional ballistic conduction for such as hydrogens, electrons, holes, and so on occur is as follows
In the above described b, taking the direction along L as the X-axis direction and from the equilibrium balance between a time depending concentration Cd (x, t + τ)of diffusive Particles located in the plane perpendicular toLat a positionxalong the X-axis at a timet + τand Cd (x - X, t)located at a positionx - Xat timet, a diffusion equation or a master equation is derived. In case that diffusive Particles are in quasi-ballistic conduction, but the other constituent particles except Particles only move in more movements than the thermal vibration but not in movements of gaseous and/or liquid states, by the use of the time depending concentrationCd (x, t)of the diffusive Particles, the design of optimal nano-order or more geometrical form of the assembly is as follows,
Here,
In the above c,
In the elementary elements described in the above c-a. ~ c-c., a concentrationCdfor Particles of Particle Beams, micro-Particles composed of Particles corresponding to such as Particle or molecules chemically bonded with other atoms/molecules are determined by Math. 12. The particles except Particles of Particle Beams, moreover, suppressing their influence on an S/N ratio of Particles Beams in the assembly ofSand the quasi-one-direction alongLcan be estimated by solving by Math. 11, by considering the boundary condition atLandS.
In the direction alongLin each assembly, conditions for respective Particles in a group of Particles of Particle Beams having a setting up energyE, in which the other particles except Particles of Particle Beams suppress their influence on the S/N ratio of Particle Beams maximally conducting along the quasi-one-direction, and those for optimal designs of nano or more orders of each assembly are:
In the above d., the dispersion motion of Particle Beams is only determined by the concentrationCdin Math. 11. Optimal design of the assembly having nano or more orderLand space-time variations ofS at the location ofLis:
In general, the assemblies can not be distinctly categorized in the above a ~ c. Moreover the above optimized design of nano or more order assemblies in such as a ~ c as well as d are merely examples, the above optimized design is changed together with developing computer simulation and is not intended to be fixed.
As to Particles of Particle Beams which are in through the assembly 10 and/or from the emission source end to the absorption source end of the outer wall in
In illustration of the elementary element making less susceptible to the influence on the S/N ratio in accordance with principle of the present invention, the accompanying drawing, in which it is omitted to illustrate the outer wall, the emission source and/or the absorption source ends, the modification portions, electromagnetic sources, mechanical parts and the like in the outer wall, the support and/or the connecting members in the outer wall and/or associated with other of the elementary elements or other parts, the reaction fields and the like, and in which the elementary element is watched mainly illustrated only the assembly, together with this specification, is intended to briefly, clearly and schematically explaining such one or more embodiments which construct this specification. Although the following conceptual diagrams of the present invention emphatically explains principles of the present invention, of course it is not intended to identify the present invention.
In turn, such as an apatite type lanthanum silicon oxide, structures of the high-speed-diffusion-path or columnar-layer-porous, which are atoms, ions and/or molecules can move only through a hollow styloid structure direction in the assemblies made of spatial constructions having the hollow styloid structures. It is possible that interactions between the materials constituting the assembly and Particles of Particle Beams make Particle Beams a selective flow. As illustrated in
The form of the quasi-one-dimensional assembly 30 varies with the kind of Particles of Particle Beams. As described in the above a., for electrons and/or holes the degree of each thermal noise depends on disorders around the cross-section of the assembly and the temperature of the elementary element.
The smaller the square root of the cross-section areaSbecomes, even if the temperature of the elementary element is the room temperature, the less transitions from the highest states of the electrons and/or the holes to the respective lowest states due to the thermal noise dose occur, moreover, if the electrons and/or the holes are in the macroscopic quantum states, the S/N ratio of the elementary element is further improved.
As described in the above b., for Particles being atoms, ions, and/or molecules, interaction forces among Particles of Particle Beams in the assembly 30 made of spatial constructions having the hollow styloid structures, and/or among Particles of Particle Beams, the particles except Particle Beams in the assembly 30, the particles of the outer wall, the particles of the modification portions and Particles of Particle Beams through other the elementary elements and so on make the S/N ratio of its own the elementary element improve.
As described in the above c., in case that the diameter of the hollow styloid structures is large, the flow in the hollow syloid structures is also controlled by taking account of laminar including turbulent flows. As a result energy consumptions of the cooling maintenance for the device can be reduced. In case that Particles of Particle Beams are charged particles, through a protuberance 31 built on the emission source end and/or the absorption source end, the electric fields near-by charges on the electrode facing with it or the emission source end and/or near-by the absorption source end facing with 33 due to target charges enlarge, moreover those bring a result on Particles of Particle Beams being easy to be emitted and/or absorbed.
When a temperature difference between the particle movement portion and the emission source or absorption source end is large, for example
A particle changes its momenta but it is difficult to alter its energies in case of colliding with large mass than it. A concrete example of claim 2 characterizes that the low-energy Particles of Particle Beams, which are in the better against the depreciation of S/N ratio due to disorder of the stereo structures and lattices of the constituent materials and the heat of the elementary element, are strongly oozed out to a localized and nano-order absorption end 41, so that the low-kinetic-energy Particles of Particle Beams interact at the area 43 with a shooting particle 45 emitted from a shooting particle emitting source 44. The low-kinetic-energy Particle being in good S/N ratio prepared from the elementary element combines with the shooting particle 45 being the large mass than that of the low-kinetic-energy Particle to produce an energy state of a cojioning shooting particle in good S/N ratio.
Or a charge transfer occurs, and the flows of charge transferred shooting particle and/or particle beams are produced to be in good S/N ratio. Using the low-kinetic-energy Particles in good S/N ratio of the elementary element as electrons, charges of the shooting charged massive particles in good S/N ratio are neutralized, so that the neutral charge massive cojioning shooting particles in good S/N ratio are able to be obtained even in low-kinetic energy. On the other hand, for the the neutral charged massive conjioning shooting particles with the high energy, because the thermal energy is negligible to the high energy, they are always in good S/N ratio.
Using atoms, ions and/or molecules as Particles of Particle Beams, electrons, holes, atoms, ions, and molecules can be reacted with them after the leaving point or before the starting point of the particle movement portion in the elementary element. Claim 3 is possible to control reactions by control of Particle Beams passing through the assembly. In
Though the above described device can be applied to porous support layers of polymer electrolyte membranes (PEM) + anode catalyst layers, in order to completely understand various aspects of models being connected with the claims in the above description in
Claim 4 is able to allow that through an assemblage of the elementary elements the assemblage of the elementary elements modifies their respective original functions of the elementary elements and/or has other functions from their functions of the elementary elements. A pair for the assembly of an elementary element and the assembly of another one dose not need to be combined with one-to-one, it is also possible that some assembly of the elementary elements are combined with the assemblies for a plurality of other elementary elements in multi correspondence. Moreover, since kinds of Particle Beams moving through the each assemble may change on its way, an assembly of an elementary element is need not to correspond to an assembly of another elementary element in one-to-one correspondence.
Claim 5 characterizes that, in Particles of Particle Beams moving through the particle movement portion 60 in
The emission source end and/or the absorption source end 31 is stained with and/or deformed by charged particles and the like use. By arranging source heating parts in 33 near-by 31, it is possible to reduce the absorption of atoms and molecules, and the deformations by using the emission source end and/or the absorption source end 31.
In case of the emission source and/or the absorption source acting as the source of Particle Beams with good S/N ratio, in claim 6 it is possible to create a device requiring no parts except controlling parts of Particle Beams and having both higher responsiveness and better S/N ratio than the conventional elements. And by lowering an energy consumption for cooling the device, it is possible to improve an efficiency of a system combining modules incorporating series or parallel, or their complex array of the devices with a load in the external world by connection wires. As such devices, a photoelectric surface, a thermoelectric device, a transistor, a diode, a cold cathode tube, a fuel cell and so on are considered. In addition it may be considered to incorporate the devices into the module and/or the system.
The cases that a device is made from series, parallel, or complex hybrids of series and parallel of the elementary elements as described in claim 6. that a device dose them of the elementary elements which are removed the controlling part of Particle Beam in the elementary element or that the devices are made of the elementary elements with or without the controlling part of Particle Beams in claim 6 and the conventional elements except claim 6 are considered.
Obviously, a module being combination of those devices, devices and other the elementary elements is also constructed in accordance of the scope and spirit of the present invention. Therefore a system is able to be made of the low-energy particle emission sources and/or absorption sources having less influence on an S/N ratio than systems including modules according to only the conventional elementary elements. Obviously, to provide a method for implementing devices constructed from the elementary elements, modules, and systems, may be employed in numerous embodiments.
Claim 7 makes it possible to store an energy by absorbing particles in a particle reservoir by using the elementary element connecting with the particle reservoirs, or utilize the energy of the particles by releasing the particles from the particle reservoirs through the connected elementary element connecting with the particle reservoirs. For elementary elements used here are in a good S/N ratio, so the energy efficiency of the above system is much higher.
Any actuators, modules, and systems in the description of the present application, unless warning is especially noted, are not to be considered as importantly or decisively essential for the present invention.
The present invention can reduce an influence of the S/N ratio due to the heat of the elementary element by decreasing the cross-sectional area of the emission source end or the absorption source end. Because that emitting electron flows can be controlled by bias currents if an area of the emitting source end is very small and the emitting source ends for a large number of the elementary elements can be closely arranged each other, then a reduction in energy consumption required to operate a cooling a system at low temperatures can occur much more significantly than that for the negative voltage control electrode, and the system is also able to have the quick responsibility. Furthermore, by adding magnetic atoms or molecules in quasi-one-dimensional system in the assembly, high-spin-polarization having less depolarization of electron spin by an external magnetic field and a high quantum efficiency are obtained.
A double quantum dots used in quantum computer is in having a stable charge state that an excess electron tunnels between two quantum dots (
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