专利汇可以提供Semiconductor light emitting device专利检索,专利查询,专利分析的服务。并且PURPOSE: To realize an integrated light source wherein electric isolation resistance between a laser and a modulator is sufficiently large, and light loss caused by the structure for isolation is extremely small, in a distributed feedback type laser and an absorption type optical modulator bar voltage application, and obtain a semiconductor light emitting device capable of remarkably increasing the capacity of an optical communication channel.
CONSTITUTION: Two conductive semiconductor layers 2, 3 spacially isolated are formed in the vicinity of the surface of a semi-insulating semiconductor substrate. On the conductive semiconductor layer 2 of one side, a distributed feedback type laser composed of the following is formed; a waveguide layer 5, an active layer 6 of a first multiple quantum well structure, a waveguide layer 8 having a diffraction grating on the surface, and a clad layer 9. On the conductive semiconductor layer 3 of the other side, an absorption type optical modulator by voltage application composed of the following is formed; a waveguide core layer 7 of a second multiple quantum well structure, and a clad layer 9. The above feedback type laser and optical modulator are constituted so as to form a common stripe, thus obtaining the title semiconductor light emitting device.
COPYRIGHT: (C)1992,JPO&Japio,下面是Semiconductor light emitting device专利的具体信息内容。
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