专利汇可以提供Liquid phase epitaxial growth专利检索,专利查询,专利分析的服务。并且PURPOSE: To contrive the easy and reliable removal of an unnecessary fused melt by a method wherein after an epitaxial crystal is grown on a substrate, an ampule is rotated while the temperature of a melt is made to drop and a fused melt is moved to the inner wall of the ampule by a centrifugal force.
CONSTITUTION: While the temperature of a melt subsequent to an epitaxial growth is made to drop, an ampule 11 is rotated with a pipe axis 12 of this ampule 11 as a center and the melt subsequent to an epitaxial growth is moved to the direction of the inner wall of the ampule 11 by a centrifugal force generated by the rotation. As the temperature of the melt is made to drop at a constant temperature gradient, an unnecessary melt, which is moved to the inner wall by the centrifugal force and is adhered on the inner wall, is finally solidified on the inner wall of the ampule 11 and are adhered on the inner wall. Thereby, the melt, which intrudes into the gap between a substrate 1 for epitaxial growth use and a substrate holder 2, or the unnecessary melt remaining on the substrate after an epitaxial growth can be reliably removed.
COPYRIGHT: (C)1990,JPO&Japio,下面是Liquid phase epitaxial growth专利的具体信息内容。
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