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Semiconductor integrated circuit

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专利汇可以提供Semiconductor integrated circuit专利检索,专利查询,专利分析的服务。并且PURPOSE:To accomplish a higher speed of I L gate by specifying the degree of the diffusion and the concentration of the impurities in arrnaging a hrizontal element having the I L gate and a normal vertical pipolar element each on two sections of an epitaxial layer separated after it grows on the semiconductor substrate. CONSTITUTION:Two N -type buried regions 4 are formed by diffusion on a P-type Si substrate 1, and a N-type layer is epitaxially grown entirely on the regions. Then, the layer 3 is separated into two islands by a P -type region 3. An I L gate is provided on one island and a normal bipolar element on the other island. Here, an emitter 11 and an external base of an injector horizontal element for I L gate is made higher in the centration of impurities than an internal base 14 immediately below a collector of the vertical element. Thus, a double base construction is formed with a larger degree of the diffusion. On the other hand, the bipolar element also is developed as a double base construction by forming an external base 15, an external base of the I L gate and shallow internal base 16. Here, the concentration of impurities of the internal base 16 is made higher than that of the internal base 14.,下面是Semiconductor integrated circuit专利的具体信息内容。

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