专利汇可以提供Material working method with photo resist专利检索,专利查询,专利分析的服务。并且PURPOSE: To perform fine working by softening the photo resist film having been made in eaves form to allow the same to be contacted to the material being worked and working the material being worked at least twice in a self-alignment manner.
CONSTITUTION: An oxide film 2, phosphorus-doped poly-Si 3 and an oxide thin film 4 are laminated on a p type Si substrate 1 and a resist mask 5 is made. When etching is performed by keeping a NH
2 F/HF solution of 6:1 at 20°C, then side etching size and variations in shape may be made sufficiently small and the fil m 4 is etched. Following to this, the substrate is treated for 10 minutes at 140°C to soften the resist 5, after which the film 3 is plasma-etched to remove the mask 5. Next, n
+ layers 6-1, 6-2 are provided by implanting As and the film 3 is plasma- etched through the mask 4, after which As is driven to provide n layers 7-1, 7-2, whereby a MOSFET is created. Then, working more than twice in a self-alignment manner becomes possible with one kind of mask and fine working may be formed with good controllability of working and working shape
COPYRIGHT: (C)1979,JPO&Japio,下面是Material working method with photo resist专利的具体信息内容。
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