Production for gate layer of longiiudinal field effect transistor
专利汇可以提供Production for gate layer of longiiudinal field effect transistor专利检索，专利查询，专利分析的服务。并且PURPOSE: To prevent impurity from invading the groove side face to enlarge the dielectric strength of FET by providing mesh-shaped grooves in a semiconductor substrate and forming the gate area, whose conductive type is different from the substrate, in the substrate thickness direction at the bottom of these grooves by ion injection.
CONSTITUTION: Si
3 N
4 film 12 and low-temperature SiO
2 film 13 laminated and are caused to adhere onto Si substrate 11 where a N type layer is grown on a N
+ type layer, and the substrate is subjected to selective etching by the photo process so that the substrate may be exposed in a mesh shape. Next, exposed part 14 is etched to provide grooves 15 while measuring by a microscope, and simultaneously, eaves 16 of a layer-built film is protruded at the top edge of groove 15. After that, P type impurity ions are injected to the bottom of groove 15 while using eaves 16 as a shield, thereby forming P
+ type gate area 17. Next, after removal of the layer- built film and heat treatment, area 17 is subjected to drive-in diffusion, and the exposed surface of substrate 11 is covered with oxide film 18. After that, an open hole is provided in film 18, and N
+ type source area 19 is formed by diffusion. Thus, high-dielectric strength gate area 17 can be formed simply.
COPYRIGHT: (C)1979,JPO&Japio，下面是Production for gate layer of longiiudinal field effect transistor专利的具体信息内容。
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