专利汇可以提供Forming method of film of fine pattern专利检索,专利查询,专利分析的服务。并且PURPOSE: To form the film of fine pattern, by forming the resist mask in eaves shape for the cross section and by using the difference of width of the pattern section for up and down surface of mask.
CONSTITUTION: When the glass plate 1 is laminated with the Cr film 2 for photo mask, Ta film 3 greater in atomic weight than the film 2, and positive type electron ray resist 4, backward scattering of electron beam is increased and the resist mask of the eaves cross section can easily be formed. The acceleration energy, dose, film thickness of resist, photo sensitivity of electron beam, and material and development method of the film 3 are determined so that the difference between the cross section widths l
1 and l
2 can be desired value. Next, the films 3, 2 are removed by etching with the mask 4a. Further, the same or differnt material 6 as the film 2 is evaporated, forming the film 6b l
1 in width. The mask 4a is lifted off, the film 6a is peeled off, and the film 3 is selectively removed, than the photo mask arranged with the films 2 and 6b in the distance of (l
2 -l
1 )/2 can be obtained. Thus, fine pattern can be formed with good accuracy.
COPYRIGHT: (C)1979,JPO&Japio,下面是Forming method of film of fine pattern专利的具体信息内容。
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