| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 21 | Interference measuring instrument | JP27621893 | 1993-10-07 | JPH07110215A | 1995-04-25 | MORI TETSUZO |
| PURPOSE: To prevent measurement errors due to the complicated change of a diffraction efficiency caused by the differences of the material, film thickness, etc., among wafers by providing a variable gain amplifier and gain control section which controls the gain of the amplifier. CONSTITUTION: Two laser beams having difference frequencies and planes of polarization intersecting each other at right angles are emitted from a two- frequency laser 1. The laser beam made incident on a young-leaf type prism is divided into two luminous fluxes through a polarization beam splitter section 4a and reflecting sections 4b and 4c and the luminous fluxes irradiate a mark 6 for measuring superimposing accuracy on a wafer 5 at prescribed angles. The primary diffracted light rays of the luminous fluxes reflected from the mark 6 interfere with each other in a Glan-Thompson prism 9 after passing through a mirror 7 and lens 8. Variable gain amplifiers 17 and 18 set gains in accordance with gain adjusting commands from a gain control section 20 and amplify beat signals from the amplifiers 15 and 16. The phase difference between two beat signals outputted from a phase detector 19 corresponds to the relative deviation between diffraction gratings 6a and 6b. COPYRIGHT: (C)1995,JPO | ||||||
| 22 | Positional dislocation detecting method and positional dislocation detecting device employing the method | JP34881493 | 1993-12-27 | JPH07190722A | 1995-07-28 | OTSU YOSHIAKI; CHITOKU KOICHI |
| PURPOSE: To cancel change in phase due to the change of material or shape if diffraction lattices, and detect positional dislocation with high accuracy by making use of a phase difference between beat signals detected by the use of two light beams which are different in the plane of polarization by 90°. CONSTITUTION: S polarization with frequency f 0 from a light source 1 is divided into two light beams LR and LT by a half mirror 2, they are modulated into lights f 1(p) and f 2(s) having frequencies f 1 and f 2 respectively which are fairly different by acoustic light modulators 27 a and 27 b, and they are then injected to diffraction lattices 15 a and 15 b over a wafer surface 16 via mirrors 4 a and 4 b. After that, the (-) primary diffracting light of light f 1(p) and the (+) primary diffracting light of light f 2(s) are vertically reflected with respect to the wafer 16 so as to be diffracted, they are converged by a lens 6, and they are divided into two lights by a Glan-Thompson prism 7 and an edge mirror 8 thereafter, so that they are then led to sensors 10a and 10b respectively. A first and a second beat signal which are transformed by photoelectric conversion by the sensor 10 a and 10 b, are inputted into a phase difference meter 11 through a gate circuit 29 which is opened/closed by a clock signal from an oscillator 28, so that the phase difference between both the beat signals is thereby measured. COPYRIGHT: (C)1995,JPO | ||||||
| 23 | Evaluation method of constituent material for semiconductor element | JP15220190 | 1990-06-11 | JPH0443661A | 1992-02-13 | IIZUKA JUNICHI; YOSHIDA MASAMICHI |
| PURPOSE: To execute an in-line evaluation operation by a method wherein, at a Raman spectroscopic apparatus used to measure a constituent polycrystalline material for a semiconductor element, a crystal particle size is detected from the degree of a change in the Raman peak intensity obtained by changing the diameter of a laser beam with which its specimen is irradiated. CONSTITUTION: An argon laser of a light source 10 is passed through a filter 11; it is incident on a tube at a microscope 12; it is made perpendicular to a specimen 3 by using a half-mirror 13; it is condensed by an objective lens 2. A Raman scattering beam radiated from the specimen 3 is passed through the objective lens 2 and is radiated from a half-mirror 14. A Raman beam obtained by passing the Raman scattering beam through a Glan-Thompson prism 15 is separated into its spectral components by using a monochromator 16; it is incident on a photomultiplier 20. A thermal oxide film is formed on a silicon substrate; polysilicon is deposited on it and annealed. This is used as a specimen. When the size of its crystal particle is evaluated at laser beam diameters of 1 μm and 2 μm, it is possible to obtain a result which coincides which the size of the actually measured crystal particle. Thereby, the size of the crystal particle in a semiconductor film can be measured in a nondestructive manner, in the air and in a short time. COPYRIGHT: (C)1992,JPO&Japio | ||||||
| 24 | Method and device for analyzing contamination degree of metal surface | JP15862597 | 1997-06-16 | JPH116795A | 1999-01-12 | OKUBO AKIKO; WATANABE MASAO |
| PROBLEM TO BE SOLVED: To make it possible to measure the presence of contaminated material of the junction part of an electronic device by comparing the ratio of the P-polarized component and the S-polarized component in the reflected light when the metal surface that is the sample with the predetermined threshold value is irradiated with the light of the specified wavelength. SOLUTION: The output light of a light source 11, which is, e.g. He-Ne laser (wavelength of 633 nm) is expanded by a beam expander 12, condensed by a condenser lens 13 after homogeneous action and irradiated on a sample 21 mounted on an X-Y stage 17. The reflected light at the sample 21 passes through a polarization plate 14 for selecting the P-polarized component or the S-polarized component in the reflected light and a pinhole 15 and then applied into a photodetector 16. As the polarization plate, a Glan-Thompson prism is used, and a rotary mechanism is attached. Then, it is irradiated with the P-polarized wave and the S-polarized wave respectively. The intensity of the reflected light of the respective polarized wave is measured. The ratio of the P-polarized component and the S-polarized component is compared with the predetermined threshold value. Thus, the contamination degree of the rough metal surface is evaluated. | ||||||
| 25 | Method and apparatus for detecting position deviation | JP27710494 | 1994-10-17 | JPH07174517A | 1995-07-14 | MATSUMOTO TAKAHIRO; SAITO KENJI; CHITOKU KOICHI |
| PURPOSE:To detect position deviation highly accurately by casting two luminous fluxes into diffraction gratings, utilizing a plurality of the diffracted lights generated in the diffraction gratings and correcting the phase difference between a plurality of beat signals based on the property of the diffraction gratings. CONSTITUTION:Two luminous fluxes in linear polarization, which are intersected at a right angle and have the different frequencies, are emitted from a double- frequency orthogonal polarization laser 1 into diffraction gratings 15a and 15b through a lighting means. The diffracted lights from the gratings 15a and 15b are cast into a Glan-Thompson prism 7 so as to generate heterodyne interference. The light beams are further divided into two portions with an edge mirror 8. The diffracted light from the grating 15a (15b) undergoes photoelectric conversion with a sensor 10a (10b), and the first (second) beat signal is formed. The phase difference between both beat signals is detected with a phase difference meter 11. Then, a rotary stage 17 is turned by 180 degrees, and (x) and (y) stages 19 and 18 are driven. The gratings 15a and 15b are matched to the positions of the beam spots. The phase difference between the third and fourth beat signals is by the same way. The relative position deviation of the gratings 15a and 15b is obtained with an operator 13 based on two phase differences. | ||||||
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