3. A capacitive circuit comprising an input electrode including a semiconductor region of a first conductivity-type semiconductor material in a substrate of a different conductivity-type semiconductor material, a capacitor having a fixed plate disposed over a region of the substrate and insulated therefrom, a second plate comprising an inversion layer in the substrate region subjacent said fixed plate, means for electrically connecting said inversion layer with the semiconductor region of said input electrode for connecting said capacitor in electrical series with said input electrode and producing a proportional increase in the voltage on said fixed plate and producing a proportional increase in the voltage on said fixed plate in response to a voltage applied to said input electrode, said capacitive circuit including means for operating in a clocking sequence of multiple phase signals, means for applying a first voltage to said fixed plate during one interval of said multiple phase signals, said voltage having a magnitude for inducing a change in the substrate region subjacent said fixed plate for forming said inversion layer having electrical characteristics substantially equivalent to the semiconductor region of said input electrode; logic function means connected to said fixed plate during a second interval of said multiple phase signals; means for conditionally connecting said fixed plate to electrical ground during said second interval of said multiple phase signals as a function of the logic state of said logic function; and means for applying a second voltage to said input electrode during a third interval of said multiple phase signals for boosting the voltage on said plate as a function of the logic condition of said logic function during said second interval.

5. A field effect circuit having semiconductor regions in a substrate, said circuit comprising a capacitor including metal plate means disposed over a semiconductor region of one conductivity type in said substrate having the same conductivity as said semiconductor region; circuit means for inverting said semiconductor region for forming a second plate of the capacitor; and a semiconductor region of a different conductivity type in said substrate, an electrical contact on said region of different conductivity type for providing voltage levels thereto, said region being contiguous with the inverted semiconductor region, means for electrically connecting said inverted semiconductor region with said semiconductor region of a different conductivity type only without directly connecting said semiconductor region of a different conductivity type electrically with other semiconductor regions of said difference conductivity type and for producing a proportional increase in the voltage on said metal plate in response to a voltage level applied to said semiconductor region of different conductivity type.