序号 专利名 申请号 申请日 公开(公告)号 公开(公告)日 发明人
101 Single photon generator and single photon generating method JP2003043188 2003-02-20 JP2004253657A 2004-09-09 TAKEMOTO KAZUYA; USUKI TATSUYA; TAKATSU MOTOMU
<P>PROBLEM TO BE SOLVED: To provide a single photon generator that can surely generate a single photon. <P>SOLUTION: Composition gradient is formed in a quantum dot, and a photoexcited electron and a hole are respectively held in a spatially isolated position. When a single photon is generated, an electric field is applied to the quantum dot to recombine the held electron and hole. In this case, the recombination is set in such a timing that a time equivalent to the reuniting life of an exciton molecule formed in the quantum dot is lapsed after photoexcitation. <P>COPYRIGHT: (C)2004,JPO&NCIPI
102 Flat panel display JP2002533266 2001-10-03 JP2004511016A 2004-04-08 トラビス、エイドリアン ロバート リー
フラットパネルディスプレイは、赤外レーザのようなコリメート光源により照射されるプロジェクタ(21−23)と、光線の伝播軸に沿ってある距離に該光線を放つ導波路(1)と、該距離はパネルの縁部への入射に関係付けられることと、投影された画像を伝播軸と垂直なパネルの面における幅の大きさに拡大するための入厚板(3)と、赤外光を可視光に変換する蛍光体出力スクリーンとからなる。 導波路内において単色光を使用することにより散乱の問題を低減し、各々が異なる角度で進入する三つ組からなるプロジェクタを使用することによりレジストレーションが比較的簡単にできる。
103 Multiple optical modulator JP2000188507 2000-06-22 JP2002006277A 2002-01-09 KAWANISHI TETSUYA
PROBLEM TO BE SOLVED: To provide an optical modulator by multiple modulation capable of providing light intensity-modulated by a radio frequency even from a radio- frequency electric signal of a lower radio frequency, compared with a conventional configuration using intensity modulation by a higher radio-frequency electric signal. SOLUTION: This is a device having a configuration for obtaining high-order side band waves by guiding laser light into a kind of an optical reflection resonator and modulating the light plural times while it reciprocates therein, and a band-pass filter for transmitting side band waves of a desired frequency or higher among them, and is able to provide light intensity-modulated by an integral multiple frequency of the inputted radio frequency electric signal.
104 Optical image processing and pattern recognition device using an induction light echo JP50547690 1990-03-15 JP2784389B2 1998-08-06 KAKURUU RAUINDAA; FUU EMIRIII WAI; KURORU SUTEFUAN; HYUUSUTEISU DEIUITSUDO ERU; KIMU MYUNNKEUN
105 Fast response infrared target, and optical axis alignment test system JP22641690 1990-08-28 JP2716253B2 1998-02-18 ケン・エス・ベイツ; ジェームス・ダブリユ・リン; デイビッド・ビー・チャング
106 Infrared image converter JP52130295 1995-02-07 JPH09508720A 1997-09-02 エイハーン、ジョン・エス; リトル、ジョン・ダブリュー・ジェイアール
(57)【要約】 中間波赤外線または長波赤外線熱画像をコヒーレントな近赤外線画像に変換する。 この変換装置は、量子井戸を用いた光変調器の二次元アレー(500)と赤外線光変調器(100)とを備える。 各変調器は個別の光変調器により集積化またはハイブリッド化され、その組立体は電子回路に接続されている。 中間IRまたは長IRの光強度の変化は各光検出器によってその個別の変調器に印加されたバイアスの変化に変換される。 そのバイアスの変化は、変調器を照射する近赤外線光の強度および/または位相を変調する。
107 Spectrum modulation by the phase modulation with a spectral extent JP51031496 1995-09-13 JPH09505910A 1997-06-10 エクスタイン、ジェームズ・エヌ; バーシュップ、ガリー・エフ; ラジアット、マジド・エル
(57)【要約】 電気光学媒体(104)の光学ガイドで伝達する光学パルスが、RF移動波と相互作用し、共面の光学的波長を偏移する。 RF位相は、空間的州規制をもった光学パルスに再度同期され、RFと光学放射との間に所望の位相関係を与える。 一方向増分波長偏移器(104)が、ソリトン通信のための周波数マルチプレクサから成り、このタイプの対称側帯変調器(106)が、原子吸収分光器プローブビームでのプローブ発光の空間幅を変化させる。
108 Full-color upward conversion display JP10020591 1991-05-01 JPH04253087A 1992-09-08 SURABA EE PORATSUKU
PURPOSE: To form a color image display by forming color light by subjecting incident IR rays to upward conversion and to provide a full-color display suitable for provision of the large color image display. CONSTITUTION: This full-color upward conversion display includes an upward conversion screen 20 including a main material, such as calcium fluoride, and ≥1 rare earth ion dopant materials reacting with incident IR rays so as to radiate selective red, green and blue visible light when excited by IR rays of an adequate wavelength and intensity and a scanning means 30 for exciting the upward conversion screen 20 so as to limit the specific color images by exciting the desired pixel positions of the IR radiation of the adequate wavelength and intensity from, for example, a laser source 25. COPYRIGHT: (C)1992,JPO
109 Optical calculation system for terahertz repetition rate, communication system using optical processor based upon mixed phase modulation and logic element JP19283990 1990-07-20 JPH03165128A 1991-07-17 ROBAATO AARU ARUFUANO
PURPOSE: To obtain an optical communication system by depending upon a phenomenon of mixed phase modulation which varies and controls one or both at the same time of temporal, spatial or both characteristics of spectra of ultra- short light pulses for processing information at a fast repetition rate. CONSTITUTION: A 1st beam 15 includes a group of pulses of a 1st frequency, a 2nd beam 17 includes a group of pulses of a 2nd frequency and a beam having higher luminance than pulses of the 2nd beam 17 is generated with the pulses of the 1st beam 15. With specific information the pulses of the 1st beam 15 are modulated 18, the 2nd beam is combined to form 25 a 3rd beam 27, a 4th beam 31 is made from a nonlinear material 29 and includes pulses of 1st to 3rd frequencies and pulses of the 3rd frequency are generated from a special effect of mixed phase modulation. The pulses of the 1st frequency are removed through a filter 33, the 4th beam 31 is separated 35 into a 5th beam 37 and a 6th beam 39 and pulses existing in those beams are detected 45 and 47. Consequently, an optical communication system is obtained by using a principle of mixed phase modulation. COPYRIGHT: (C)1991,JPO
110 Method and apparatus for controlling transmission of radiation energy JP19471085 1985-09-02 JPS61129621A 1986-06-17 TOMU HENINGUSEN; TERESA AN GUURUDO
111 JPS61500195A - JP50367684 1984-09-25 JPS61500195A 1986-01-30
112 Bidirectional wavelength conversion element JP10954982 1982-06-25 JPS59977A 1984-01-06 OKUDA HIROSHI
PURPOSE:To enable to efficiently convert wavelengths between two difference wavelengths by a bidirectional wavelength conversion element by composing of p-n-p (or n-p-n) type transistor structure of direct transient semiconductor material. CONSTITUTION:A bidirectional wavelength conversion element is composed in a p-n-p type transistor of a p type Ga1-xAlxAs layer 1, an n type Ga1-yAlyAs layer 2 and a p type Ga1-zAlzAs layer 3. An external bias voltage V is applied between the electrodes 4 and 5 so that a reverse bias is applied between the layers 1 and 2 and a forward bias is applied between the layers 2 and 3. The incident light of wavelength lambda1 is introduced to the layer 1 of a band gap Eg1, thereby generating photons. The generated photons are flowed to the layer 2 by a reverse bias electric field applied between the layes 1 and 2. The flowed electrons are injected to the layer 3, and light is emitted to be recombined in this region.
113 Optical wavelength converter JP6987482 1982-04-26 JPS58186725A 1983-10-31 IKEDA MASAHIRO
PURPOSE:To obtain an optical wavelength converter which converts an input light signal directly to an output light signal differing in wavelength by providing a semiconductor P-N junction element having a special function and an optical filter. CONSTITUTION:A source voltage VB is applied to a semiconductor P-N junction element 4 such as semiconductor laser and the element is grounded through a load resistor RL, whereby the implantation current I0 larger than an oscillation threshold is supplied to the element 4. An input light signal of a wavelength lambdai is implanted into the active layer of the element 4 from one terminal thereof and an output light signal is drawn out from the other terminal. The output light signal is passed through an optical filter 5 using, for example, an optical demultiplexer, so that only the light signal of the oscillation wavelength lambdam of the element 4 among the output signals is passed therethrough, whereby the conversion of the optical wavelength is accomplished. Here the phases of the input light signal lambdai and the output light signal are inverted, but the output signal of the same phase is obtainable by performing the similar conversion of the optical wavelength again.
114 JPS563530B2 - JP6495977 1977-06-03 JPS563530B2 1981-01-26
115 JPS5433240B2 - JP9603874 1974-08-21 JPS5433240B2 1979-10-19
116 Zairyochunikogakutekifukinitsuseiodonyusurutamenohohooyobisorenyotsuteseizosarerukogakusoshi JP786476 1976-01-27 JPS51102657A 1976-09-10 UIN KERII SUEINSON; SUCHIIBUN DEII KURAMAA
117 JPS5051098A - JP9603874 1974-08-21 JPS5051098A 1975-05-07
118 JPS4842392B1 - JP3224070 1970-04-16 JPS4842392B1 1973-12-12
119 발광 장치 KR20187003652 2016-06-30 KR20180028477A 2018-03-16
본발명은발광장치에관한것이다. 장치는제1 파장의광(10)을방출하도록구성되는고 세기광원(102); 고세기광원에의해방출된제1 파장의광을공간적으로평탄한광 분포를갖는원시야빔 단면프로파일을갖는출사광 빔으로재분배하도록구성되는빔 성형광학요소(104); 및공간적으로평탄한광 분포를갖는출사광 빔에노출되고, 제1 파장의광의적어도일부를제2 파장의광(20)으로변환하고, 제2 파장의광을방출하도록구성되는광 변환부재(206)를포함한다.
120 전자소자 KR20160100917 2016-08-08 KR20180016902A 2018-02-20 JANG EUN JOO; CHUNG CHIL HEE; KIM TAE HYUNG; MIN JI HYUN; JANG HYO SOOK; CHUNG DAE YOUNG
서로마주보는애노드와캐소드; 상기애노드와캐소드사이에위치하고복수개의양자점을포함하는양자점발광층; 그리고여기발광원을포함하는전자소자로서, 상기양자점은상기애노드와상기캐소드로부터제공된전기에너지를받아들여제1 파장의광을방출하며, 상기양자점발광층과상기여기발광원은, 상기여기발광원이 300 내지 490 nm 의범위인제2 파장의광을상기양자점에제공하고상기양자점이상기제2 파장의광에의해여기되어상기제2 파장보다큰 제3 파장의광을방출하도록구성되며, 상기애노드와상기캐소드중 적어도하나는투광전극이고, 상기제1 파장의광 및상기제3 파장의광은, 상기투광전극을통해나오는전자소자에대한것이다.
QQ群二维码
意见反馈