| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 1 | 检查系统和设备 | CN200680001263.8 | 2006-03-06 | CN101069092A | 2007-11-07 | M·布兰登·斯蒂勒; 杰弗里·A·豪索恩 |
| 一种用于识别样本表面上的缺陷或污染的方法和系统。该系统通过经由vCPD和nvCPD检测表面上功函数的改变而工作。它利用非接触电位差(nvCPD)传感器对整个样本上的功函数变化成像。数据是微分数据，因为它代表样本表面上的功函数(或几何形态或表面电压)的改变。vCPD探头被用来确定样本表面上的特定点的绝对CPD数据。振动和非振动CPD测量模式的结合实现对整个样本均匀性的快速成像以及检测在一点或多点上的绝对功函数的能力。 | ||||||
| 2 | 检查系统和方法 | CN200680001263.8 | 2006-03-06 | CN101069092B | 2011-04-27 | M·布兰登·斯蒂勒; 杰弗里·A·豪索恩 |
| 一种用于识别样本表面上的缺陷或污染的方法和系统。该系统通过经由vCPD和nvCPD检测表面上功函数的改变而工作。它利用非接触电位差(nvCPD)传感器对整个样本上的功函数变化成像。数据是微分数据，因为它代表样本表面上的功函数(或几何形态或表面电压)的改变。vCPD探头被用来确定样本表面上的特定点的绝对CPD数据。振动和非振动CPD测量模式的结合实现对整个样本均匀性的快速成像以及检测在一点或多点上的绝对功函数的能力。 | ||||||
| 3 | 半导体检查系统和设备 | CN200810096694.8 | 2008-03-07 | CN101266222A | 2008-09-17 | J·A·豪索尔尼; M·布兰登·斯蒂勒; 杨业元; M·舒尔泽 |
| 本发明提供一种利用非振动接触电位差传感器和可控照明的半导体检查系统和设备，用于识别半导体表面或半导体内的缺陷或污染。该方法和系统包括：提供具有表面的半导体，例如半导体晶片；提供非振动接触电位差传感器；提供具有可控的强度或波长分布的照明源；在非振动接触电位差传感器探针头下方或附近使用该照明源来提供晶片表面的可控照明；在可控照明照射时用非振动接触电位差传感器扫描晶片表面；产生代表横跨晶片表面的接触电位差变化的数据；以及处理该数据以识别缺陷或污染的图案特性。 | ||||||
| 4 | Σ-Δ模数转换器 | CN201480071729.6 | 2014-12-15 | CN105874399A | 2016-08-17 | A.达斯特海布; B.奥蒂斯 |
| 一种恒电势器包括电压调节器、电流镜、电容器、比较器、电流源和计数器。电压调节器保持电化学传感器的工作电极上的电压。电流镜产生与来自工作电极的输入电流成镜像的镜像电流。电容器交替地被镜像电流充电从而使得电容器电压以与电流的大小相关的速率增加以及被控制电流放电从而使得电容器电压减小。比较器基于电容器电压的变化输出包括向上转变和向下转变的波形。电流源基于波形产生控制电流。计数器对在预定采样时段期间在波形中的向上转变或向下转变的数量进行计数以产生数字输出。所述数字输出代表输入电流的大小。 | ||||||
| 5 | 校准接触电势差测量的方法和系统 | CN200980115697.4 | 2009-04-28 | CN102017117B | 2014-06-11 | 马克·A·舒尔策; 威廉·R·厄斯里 |
| 一种利用非振动式接触电势差探头和振动式接触电势差探头确定晶片表面接触电势差的方法和系统。所述方法和系统涉及利用非振动式接触电势差传感器扫描晶片表面，将产生的数据积分并缩放，并向个别数据轨迹应用偏移量，从而将积分并缩放的数据与利用振动式接触电势差传感器获得的测量结果匹配。 | ||||||
| 6 | 校准非振动式接触电势差测量结果以检测垂直于传感器运动方向的表面变化 | CN200980115697.4 | 2009-04-28 | CN102017117A | 2011-04-13 | 马克·A·舒尔策; 威廉·R·厄斯里 |
| 一种利用非振动式接触电势差探头和振动式接触电势差探头确定晶片表面接触电势差的方法和系统。所述方法和系统涉及利用非振动式接触电势差传感器扫描晶片表面，将产生的数据积分并缩放，并向个别数据轨迹应用偏移量，从而将积分并缩放的数据与利用振动式接触电势差传感器获得的测量结果匹配。 | ||||||
| 7 | Calibration of the non-vibrating contact potential difference measurements for detecting the vertical surface variations in the movement direction of the sensor | JP2011507577 | 2009-04-28 | JP2011523038A | 2011-08-04 | ウィリアム アール アスリー; マーク エイ シュルツェ |
| 非振動式接触電位差プローブおよび振動式接触電位差プローブを使用して、ウエハ表面の接触電位差を決定するための方法およびシステムが提供される。 この方法およびシステムは、非振動式接触電位差センサを用いてウエハ表面を走査するステップと、得られたデータを積分およびスケーリングするステップと、積分およびスケーリングされたデータを振動式接触電位差センサを使用して行われた測定に整合させるために、データの個々のトラックにオフセットを適用するステップと、を含む。
【選択図】図１ |
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| 8 | Semiconductor inspection system and apparatus utilizing non-vibrating contact potential difference sensor and controlled illumination | JP2008057715 | 2008-03-07 | JP2008304452A | 2008-12-18 | HAWTHORNE JEFFREY ALAN; STEELE M BRANDON; YANG YEYUAN; SCHULZE MARK |
| <P>PROBLEM TO BE SOLVED: To identify defects or contamination on the surface of a semiconductor or in a semiconductor by high speed scanning of the semiconductor surface. <P>SOLUTION: The method and system involves providing a semiconductor, with a surface 106 such as a semiconductor wafer 105, providing a non-vibrating contact potential difference sensor 101 that provides a source of illumination 109 with controllable intensity or distribution of wavelengths; using the illumination source to provide controlled illumination of the surface of the wafer underneath or close to the non-vibrating contact potential difference sensor probe tip 102; using the non-vibrating contact potential difference sensor, to scan the wafer surface during controlled illumination; generating data representative of changes in contact potential difference across the wafer surface; and processing that data to identify a pattern characteristic of a defect or contamination. <P>COPYRIGHT: (C)2009,JPO&INPIT | ||||||
| 9 | Surface inspection using a non-vibrating contact potential probe | JP2006552094 | 2004-08-05 | JP2007520721A | 2007-07-26 | キム，チュンホ; スティール，エム・ブランドン; ソーウェル，デイヴィッド・シー; ホーソーン，ジェフリー・アラン |
| 材料の表面上の欠陥または汚染を特定する方法およびシステム。 この方法およびシステムでは、半導体ウェハなどの材料を提供し、非振動式接触電位差センサを用いてウェハを走査し、接触電位差データを発生し、このデータを処理して、欠陥または汚染の特性を示すパターンを特定する。
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| 10 | Wafer inspection system | JP2006503271 | 2004-02-03 | JP2006517349A | 2006-07-20 | キム，チュンホ; スティール，エム・ブランドン; ソーウェル，デイヴィッド・シー; ホーソーン，ジェフリー・アラン |
| 材料の表面上にある欠陥または汚染を特定するための方法およびシステム。 この方法およびシステムは、半導体ウェハなどの材料を提供することと、ウェハを走査するための非振動接触電位差センサを用いることと、接触電位差データを発生し、欠陥または汚染の特徴を示すパターンを特定するためにそのデータを処理することとを含む。 | ||||||
| 11 | Method of determining the concentration of gases in the vapor | JP32928794 | 1994-12-05 | JP3653293B2 | 2005-05-25 | イアン・ウィルアード・ソレンセン; ウィリアム・グラウンシンガー; ケナン・エル・エバンス; ヤング・サー・チャン |
| 12 | How to investigate the coated metal surface | JP51053291 | 1991-06-12 | JP2609024B2 | 1997-05-14 | シュトラートマン、マルティン; シュトレッケル、ハインツ |
| 13 | Thermoelectric material, manufacture thereof and sensor | JP14929892 | 1992-06-09 | JPH05343747A | 1993-12-24 | GYOTEN HISAAKI; NAKAGIRI YASUSHI; YAMAMOTO YOSHIAKI |
| PURPOSE:To enhance availability of a sensor using a Seebeck effect by improving performance of a thermoelectric material and quantitatively detecting gas pressure and concentration of a special substance. CONSTITUTION:Fine particles 1 formed of a thermoelectric material are not fusion-bonded to each other as a sectional fine structure of a material, but solidified in a pressure contact state, and special substance is adsorbed by atmospheric gas, ferment reaction with fine powder surfaces 3 and a pressure contact part 4 via air gaps 2. When the substance is adhered to the surface (boundary), thermal electromotive force is varied in response to the adsorbed amount to operate as a sensor. | ||||||
| 14 | JPS6140062B2 - | JP5921079 | 1979-05-16 | JPS6140062B2 | 1986-09-06 | JEEMUZU HYUUSUTON ROOJII; CHAARUZU EDOWAADO SUNEEBURII; KUREITON DAGURASU RUUSU |
| 15 | Method and apparatus for measuring concentration of silicon in fused iron | JP17154384 | 1984-08-20 | JPS6150047A | 1986-03-12 | HAIDA OSAMU; KAKIO YASUHIRO |
| PURPOSE:To measure the concentration of silicon in a short time, by measuring thermoelectromotive force accompanied by the temperature difference caused by the difference in places of samples during the cooling process, after fused iron, which is inputted in a sample container, is solidified. CONSTITUTION:A sample container 1 is composed of fire resisting shell mold, electrodes (copper rings) 2 and 3 and a temperature measuring thermocouple 4. Of an iron sample, a part contacting the electrode 3 is close to the end part, whose diameter is small. The cooling speed of said part is higher than that of a part contacting the electrode 2, which is provided at the central part. Therefore, the temperature difference is yielded between the surface of the iron contacting the electrode 2 and the surface of the iron contacting the electrode 3. Electromotive force is generated between both electrodes. The concentration of silicon in the fused iron is obtained based on the electromotive force and the calibration curve of the concentration of the silicon. | ||||||
| 16 | Method for measuring gelation time of thermosetting resin | JP8008584 | 1984-04-23 | JPS60224052A | 1985-11-08 | ITOU YASUHIRO; ITOU YOSHIJI; SAKAMOTO KATSUJI |
| PURPOSE:To improve accuracy and to eliminate the need for monitoring by bringing different metals spaced at two points in a resin under curing reaction into contact with the resin, measuring the inter-electrode voltage with lapse of time and measuring the time from the point of the time when the curing conditions hold unitl the voltage drops to zero. CONSTITUTION:A pair of the different metallic electrodes 2, 3 spaced from each other are disposed to the sample piece 1 consisting of a thermosetting resin in contact therewith and a thermocouple 5 embedded into the piece 1 is conneted via a temp.-signal converter 6 to a recorder 4 connecting the electrodes 2, 3. The voltage between the electrodes 2 and 3 and the resin temp. based on the temp. signal from the converter 6 are measured with lapse of time. The time from the point of the time when the curing conditions hold substantially till the point of the time when the voltage between the electrodes 2 and 3 drops substantially to zero is measured and the measured time is discriminated as gelation time. | ||||||
| 17 | Apparatus for discriminating metal material | JP4928984 | 1984-03-16 | JPS60194341A | 1985-10-02 | IMAI YOSHIHARU |
| PURPOSE:To facilitate the judgement of a metal steel kind, by preliminarily registering discrimination data in a discrimination data memory part as a digital signal corresponding to a material to be discriminated and performing the comparative judgement of said signal in a judge processing part. CONSTITUTION:The output of an amplifier circuit part 4 for taking out thermal electromotive forces from two heated copper rods 2, 3 contacted with a metal material 1 to be discriminated and amplifying the same is converted to a digital signal by an A/D converter part 6. A judge processing part 8 inputs the digital signal and performs the comparative judgement thereof with discrimination data preliminarily inputted to a setting part 9 and stored in a discrimination data memory part 7 to output digital discrimination judge data which is, in turn, displayed by a display part 10 as the judgement data of a steel kind. | ||||||
| 18 | Humidity detector | JP9467981 | 1981-06-18 | JPS57208442A | 1982-12-21 | MURATA MITSUHIRO; KUMADA AKIRA |
| PURPOSE:To detect humidity and state of dew formation depending on a thermoelectromotive force by forming a hygroscopic substance at one end of a semiconductor substrate while a heater is provided to heat the semiconductor substrate. CONSTITUTION:A pair of electrodes 2 and 3 are formed at both ends of a semiconductor substrate 1 such as ferrite, and barium titanate based and strontium titanate based ones. For example, a hydrophilic organic high polymer film such as polyvinyl alcohol with a property of dewatering easily by heating owing to a large adsorption heat generated due to a water adsorption, carbon and a hygroscopic material 4 such as hygroscopic inorganic compound including lithium salt are provided on the side of the electrode 3 of the substrate 1. A heater 5 is arranged about the semiconductor substrate 1. When a voltage is intermittently applied to the heater 5, a temperature difference develops between a part with the hygroscopic material 4 and that without it of the semiconductor substrate 1 thereby generating a thermoelectromotive force. | ||||||
| 19 | Piezo-electric oscillation element | JP14041781 | 1981-09-08 | JPS5782756A | 1982-05-24 | KAARUUHAINTSU BESOTSUKE; JIIKUFURIIDO BERUGERU |
| 20 | 流体密度を判定する方法およびシステム | JP2017514918 | 2015-09-15 | JP2017527818A | 2017-09-21 | コーネリアス ローレンス ピーターズ、 |
| 流体の密度を判定する方法およびシステム(1)が提供される。方法は、システム(1)内に接続されたエレクトロスプレー機器(3)を使用して実施される。第1のステップにおいて、エレクトロスプレー機器(3)のエミッタ(5)内に流体が導入される。エミッタ(5)とエミッタ(5)から間隙を空けられた対向電極(11)との間に、複数の断続的な期間にわたって電圧が印加され、電圧が印加される期間のうちの少なくとも一部の期間の持続時間は漸減する。電圧が印加される各期間についてエミッタ(5)と対向電極(11)との間の電流が測定され、それらの期間について電流読み取り値が得られた、最短の期間が記録される。最短の期間は、エミッタ内の流体の密度を計算するために使用される。 | ||||||
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