Document Document Title
US08766727B2 Power amplification circuit
A power amplification circuit amplifies and then outputs transmission signals of a first frequency and a second frequency, which are different from each other. When the transmission signal of the first frequency is input, a first switch is turned ON, a first LC parallel resonant circuit enters a resonant state and the transmission signal is transmitted using a line containing a first capacitor as a main line. When the transmission signal of the second frequency is input, a second switch is turned ON, a second LC parallel resonant circuit enters a resonant state and the transmission signal is transmitted using a line containing a second capacitor as a main line. Therefore, a transmission signal does not pass through, using as a main line, a line into which a switch has been incorporated.
US08766725B2 Apparatus and methods for frequency compensation of an amplifier
Apparatus and methods for frequency compensation of an amplifier are provided. In one embodiment, an integrated circuit (IC) includes an amplifier configured to amplify an input signal to generate an output signal. The IC further includes an output pad configured to receive an output signal from the amplifier and a control pad for controlling the closed-loop bandwidth of the amplifier. A compensation capacitor is electrically connected between an input of the inverting amplification block and an output of the inverting amplification block, and a switchable capacitor is electrically connected between the input of the inverting amplification block and the control pad. The control pad can be electrically connected to a DC voltage source or to the output pad to control the amplifier's closed-loop bandwidth.
US08766723B1 Methods and devices for folded push pull power amplifiers
Methods and devices provide for power amplification in a push pull power amplifier. A circuit comprises an input stage, a power amplifier stage and an output stage. The input stage provides a plurality of control voltages based on a control current. The input stage may include a transformer with a primary side and two secondary sides. A power amplifier stage comprises an NMOS transistor and a PMOS transistor arranged in a push-pull configuration to generate a plurality of amplified signals. The transistors may be in a common gate arrangement. The output stage combines the amplified signals and generates an output voltage. The output stage may include a transformer with two primary sides and a secondary side.
US08766722B2 Quiescent control circuit for providing control current for an amplifier
Disclosed is a Class-AB/B amplifier comprising a first output stage including a first plurality of amplification devices and a second output stage including a second plurality of amplification devices. According to one embodiment, the first output stage operates when the Class-AB/B amplifier is in a quiescent state and the second output stage operates when the Class-AB/B amplifier is in an active state. The Class-AB/B amplifier also comprises a level shifting circuit that adjusts a control voltage of the second output stage, where the level shifting circuit is adapted to activate the second output stage when the Class-AB/B amplifier enters the active state. Embodiments of the Class-AB/B amplifier may include a level shifting circuit that implements either a fixed or signal-dependent level shift, and a quiescent control circuit that substantially eliminates any systematic offset arising from the active feedback circuit inside the replica bias circuit.
US08766717B2 Systems and methods of RF power transmission, modulation, and amplification, including varying weights of control signals
Embodiments of the present invention include a method and system for control of a multiple-input-single output (MISO) device. For example, the method includes determining a change in power output level from a first power output level to a second power output level of the MISO device. The method also includes varying one or more weights associated with respective one or more controls of the MISO device to cause the change in power output. The one or more controls can include one or more of (a) a phase control of one or more input signals to the MISO device, (b) a bias control of the MISO device, and (c) an amplitude control of the input signals to the MISO device.
US08766716B2 Apparatus and method for interleaving switching in power amplifier
An apparatus of a hybrid power modulator using interleaving switching is provided. The apparatus includes a linear switching unit for generating an output signal by comparing an envelope input signal and a feedback signal, an interleaving signal generator for generating an interleaving switching signal arranged not to supply the signal to input stages of P-type Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FETs) and N-type MOS FETs of power cells at the same time by comparing the output signal and a reference signal, and a switching amplifying unit for determining a level of the switching signal using the interleaving switching signal. Hence, the hybrid power modulator using the interleaving switching method in the envelope signal of the wide bandwidth maintains high efficiency and high linearity. In addition, the buck converter can use the single inductor by preventing the simultaneous on/off of the power cells.
US08766712B2 Quality factor tuning for LC circuits
Apparatus and methods are also disclosed related to tuning a quality factor of an LC circuit. In some implementations, the LC circuit can be embodied in a low-noise amplifier (LNA). A quality factor adjustment circuit can increase and/or decrease conductance across the LC circuit. This can stabilize a parasitic resistance in parallel with the LC circuit. In this way, a gain of the LC circuit can be stabilized.
US08766711B2 Switching circuit with controlled driver circuit
A switching circuit device has a first transistor which has a drain coupled to a high-potential terminal, a source coupled to a low-potential power supply, and, a driving circuit, which outputs, to a gate of the first transistor in response to an input control signal, a pulse having a potential higher than a threshold voltage of the first transistor and a potential of the low-potential power supply, wherein the driving circuit has a first inverter including a second transistor provided between the gate and the source of the first transistor, wherein when the first transistor changes from on to off due to the pulse, the second transistor conducts and short-circuits the gate and the source of the first transistor.
US08766708B2 Semiconductor device and operating method thereof
A semiconductor device includes an internal voltage input buffer configured to determine voltage levels of a pull-up driving node and a pull-down driving node as a result of a comparison between a voltage level of an internal voltage node and a voltage level of a reference voltage node such that the pull-up driving node and the pull-down driving node to maintain a voltage level difference, and an internal voltage driving block configured to pull-up drive the internal voltage node in response to the voltage level of the pull-up driving node and pull-down drive the internal voltage node in response to the voltage level of the pull-down driving node.
US08766698B2 Return-type current-reuse mixer
A return-type current-reuse mixer having a transconductance/amplification stage, a mixing stage, and a high-pass and a low-pass filter network. The transconductance/amplification stage has a current-reuse CMOS topology wherein an input frequency signal is converted into a frequency current, low-frequency components are removed from the frequency current by the high-pass filter network, the frequency current is fed into the mixing stage, modulation occurs in the mixing stage, and then an intermediate-frequency signal is generated and output. Once high-frequency components are removed from the intermediate-frequency signal by the low-pass filter network, the intermediate-frequency signal is sent again for input into the transconductance/amplification stage, then amplified in the transconductance/amplification stage and output. The mixer transconductance/amplification stage employs a current-reuse technique. The input frequency and the output intermediate-frequency signal share a common transconductance/amplification stage. The mixer reduces power consumption, simplifies the circuit topology, and provides high conversion gain.
US08766696B2 Fast voltage level shifter circuit
A voltage level shifting circuit with an input terminal and an output terminal. The level shifting circuit has a field-effect transistor (FET) switch with a gate attached to the input terminal, a drain attached to the output terminal and a source attached to a current changing mechanism. The current changing mechanism includes a current mirror circuit having an output connected between the source and an electrical earth. The output of the current mirror circuit is preferably adapted to change a current flowing between the drain and the source based on an input voltage applied to the gate.
US08766693B2 Phase interpolator with independent quadrant rotation
The present invention provides an improvement of a 4-quadrant clock phase interpolator design to allow independent rotation of the output clocks in steps of 90°. This feature is useful in clock/data recovery where the 90° “jumps” can be used as a coarse control to re-align the data capture clock to achieve any desired data word alignment and/or receive bus clock alignment. The phase interpolator has a switching circuit comprising a single level of switches; a set of four transistor loads; and a set of four current sources operable to be switched by the switching circuit through to any of the set of four transistor loads.
US08766692B1 Supply voltage independent Schmitt trigger inverter
A Schmitt trigger inverter circuit can include a first inverter. The first inverter can include a first pull-up device, a first pull-down device and a second pull-down device. The first inverter can receive an input signal. The Schmitt trigger inverter circuit can include a second inverter coupled in series with the first inverter and including an output that generates an output signal. The Schmitt trigger inverter circuit further can include a switch coupled to the output of the second inverter circuit and that is selectively enabled by the output signal. The switch can couple a predetermined reference voltage to a source terminal of the first pull-down device when in an enabled state. Coupling the predetermined reference voltage to the source terminal of the first pull-down device can alter a threshold voltage of the Schmitt trigger inverter circuit.
US08766690B2 Device with automatic de-skew capability
A source driver with an automatic de-skew capability is configured to receive a data signal and a clock signal from a timing controller, which are configured to drive a liquid crystal display panel. The source driver includes a signal delay unit, a setup time register, a hold time register, a first signal delay unit, a second delay unit and a logic circuit. In one embodiment of the present disclosure, the first data delay signal is configured to sample the second clock delay signal and the second data delay signal is configured to sample the first clock delay signal.
US08766689B2 Phase-frequency detection method
The present invention relates to a method and device for phase-frequency detection in a phase-lock loop circuit. The method comprises receiving compare edge of a reference clock signal and compare edge of a feedback clock signal, maintaining a phase/frequency detector, PFD, state machine with three PFD states, UP, DOWN, and IDLE, based on the received compare edges of the reference and feedback clock signals, recording current and previous time the state machine stays in UP or DOWN states, generating an UP or DOWN signal based on transition of PFD states and the comparison between recorded current time and recorded previous time; and outputting a digital control signal to a feedback frequency control device based on the UP or DOWN signal. A device and system is arranged to execute the method according to the present invention.
US08766684B2 Charge pump, phase frequency detector and charge pump methods
A phase/frequency detector for controlling a charge pump includes: a core circuit arranged to output a first phase signal and a second phase signal according to a phase/frequency difference between a reference clock signal and an input clock signal; and a timing circuit coupled to the core circuit and arranged to generate a first control signal and a second control signal for controlling the charge pump according to the first phase signal and the second phase signal, wherein only one of the first control signal and the second control signal is indicative of an enabled operation when the reference clock signal and the input clock signal are substantially identical in phase.
US08766683B2 Double output linearized low-noise charge pump with loop filter area reduction
According to embodiments, dual path loop filter circuits are described which have, for example, a single charge pump. The current flow in the DPLF circuit is architected to source, during an injection time period, a first current to the loop filter, sink, also during the injection time period, a second current from the loop filter, wherein the first current has a magnitude of α*I and the second current has a magnitude of β*I, and sink, during a linearization time period, a third current from the loop filter, wherein the third current has a magnitude of (α−β)*I.
US08766678B2 Semiconductor apparatus and method for controlling the same
A semiconductor apparatus comprises a power-up signal generation section configured to generate a power-up signal, a driver configured to drive and output the power-up signal, and a main circuit block configured to perform predetermined functions in response to an output from the driver, wherein the power-up signal generation section and an input terminal of the driver are connected by a disconnectable element.
US08766677B2 Signal input circuit/chip
A signal input circuit and method and chip are disclosed. The signal input circuit includes a control signal input terminal configured for receiving a control signal; at least one common signal input terminal each configured for receiving a corresponding common signal; at least one first signal output terminal each configured for outputting a corresponding first signal; at least one first signal unit each configured for receiving said corresponding common signal and outputting said corresponding common signal as said corresponding first signal under control of said control signal; at least one second signal output terminal each configured for outputting a corresponding second signal; and at least one second signal unit each configured for receiving said corresponding common signal and outputting said corresponding common signal as said corresponding second signal under control of said control signal.
US08766675B1 Overvoltage protection circuit
A circuit includes: a pull down circuit including a first PFET and a second PFET connected in series between a pad of a USB circuit and ground; and a pull up circuit including a first NFET and a second NFET connected in series between the pad and a supply voltage. The circuit includes: a third PFET connected to a gate of the first PFET and a gate of the second PFET; a third NFET connected to a gate of the first NFET and a gate of the second NFET; a fourth PFET connected to the first NFET and the second NFET; and a fourth NFET connected to the first PFET and the second PFET. A pad voltage has a nominal minimum and maximum. Each of the first PFET, the second PFET, the first NFET, and the second NFET has a nominal voltage less than the pad voltage nominal maximum.
US08766667B2 Asynchronous digital circuits including arbitration and routing primatives for asynchronous and mixed-timing networks
Asynchronous digital circuits are described, including arbitration and routing primitives for asynchronous and mixed-timing networks. An asynchronous arbitration primitive has two data inputs and one data output. A mutual exclusion element is used to select the first-arriving data request from one of the two inputs to the output. A asynchronous routing primitive has one data input and two data outputs. The incoming data is routed to one of the two outputs based on a routing bit accompanying the data. The primitives use handshaking with request and acknowledge signals to ensure that data is passed when neighboring circuits are ready to receive or send data.
US08766666B2 Programmable device, hierarchical parallel machines, and methods for providing state information
Programmable devices, hierarchical parallel machines and methods for providing state information are described. In one such programmable device, programmable elements are provided. The programmable elements are configured to implement one or more finite state machines. The programmable elements are configured to receive an N-digit input and provide a M-digit output as a function of the N-digit input. The M-digit output includes state information from less than all of the programmable elements. Other programmable devices, hierarchical parallel machines and methods are also disclosed.
US08766664B2 Semiconductor device including output circuit constituted of plural unit buffer circuits in which impedance thereof are adjustable
The semiconductor device comprises an output circuit that includes a plurality of unit buffer circuits each of which has an adjustable impedance, a control circuit that selectively activates one or ones of the unit buffer circuits, and an impedance adjustment unit that adjusts the impedances of the unit buffer circuits and includes a power line, a replica circuit, which has a replica impedance that is substantially equal to the adjustable impedance of each of the unit buffer circuits, and a load current generation circuit, which changes current flowing therethrough in accordance with the number of activated the one or ones of the unit buffer circuits. The replica circuit and the load current generation circuit are connected in common to the power line.
US08766660B2 Method of testing solar cells
A method of measuring the efficiency with which a solar cell converts incident photons into charge carriers, including the following steps: (a) illuminating the solar cell with a broadband light source; (b) illuminating the solar cell with the broadband light source of which the intensity of a selected range of wavelengths has been reduced; (c) determining the change in the number of photons incident on the cell and the change in the number of charge carriers produced by the cell between steps (a) and (b); and (d) using the changes determined in step (c) to calculate the said efficiency measure.
US08766658B2 Probe
A probe includes a contact member brought into contact with an object to be tested. Contact particles having conductivity are uniformly distributed in the contact member. A part of the contact particles protrude from a surface of the contact member on the side of the object to be tested. A conductive member having elasticity is placed on a surface of the contact member on the opposite side to the object to be tested. The probe further includes an insulating sheet including a through hole and the contact member is so positioned as to penetrate the through hole. An upper part of the contact member is formed of a conductor which does not include the contact particles. An additional conductor is placed on a surface of the conductor on the side opposite to the object to be tested.
US08766657B2 RF proximity sensor
A sensor has a strip resonator filter that energizes an emitter patch which emits an electric field out from the strip resonator filter (away from the strip resonator filter). The capacitance of the filter, or specifically the coupling capacitance and radiation pattern of the slotted patch, is altered when an object such as a finger is near the sensor. Resulting changes in a signal outputted by the filter can be used to determine how close the object is to the sensor. The strip resonator filter may be a half wavelength strip resonator coupled filter having three separate strips. The patch may have a slot and two accompanying strips. An arrangement of multiple sensors may detect the position of an object in two or three dimensions.
US08766653B2 Measuring device for measuring insulation resistance of an electric vehicle
A measuring device for measuring insulation resistance of an electric vehicle includes a measuring unit, a voltage detecting unit, and a control unit. The measuring unit includes a first tap, a second tap, a switch, and a measuring resistor. The first tap is to be electrically coupled to a high potential side of a high voltage system. The second tap is to be electrically coupled to a ground side of a low voltage system. The switch and the measuring resistor are connected in series between the first tap and the second tap. The voltage detecting unit is for detecting a voltage formed between the first tap and the second tap. The control unit is operable for controlling ON and OFF states of the switch, and is configured to determine the high potential insulation resistance and the low potential insulation resistance after operating the switch in the ON and OFF states.
US08766652B2 Method and apparatus for measuring the grain angle of a round wood object
This invention provides a method and apparatus for determining the grain angle of a wood object which has a circular cross section of constant or varying radius along the object's length. This apparatus may be hand-held or fixed mounted as testing circumstances dictate. The resulting grain angle may be displayed in real time, as perceived by the user, or transmitted to a processing unit for data collection or interpretation.
US08766646B2 Calibration method and apparatus for clock signal and electronic device
An embodiment of the invention provides a clock calibration method to calibrate an internal clock signal of a computer. The method comprises: receiving an external clock signal from an external clock source; generating a pulse signal with a first duration according to the external clock signal; counting the internal clock signal according to the pulse signal to get a first count value; and calibrating the internal clock according to the first count value.
US08766643B2 Method for monitoring remaining service life of a battery
A method for monitoring the remaining service life of a battery used for operating a field device in automation technology. The present power consumption of the battery is ascertained. Then, during a first phase of life, power consumption of the battery ascertained during operation of the field device is compared with a predetermined threshold value. In the case of exceeding the predetermined threshold value, during a second phase of life, the battery is exposed to defined load spikes at predetermined time intervals. Voltage collapses corresponding to the defined load spikes are detected, and a warning report is generated when the voltage collapses reach a predetermined maximum limit value.
US08766642B2 Electrochemical cell
An electrochemical cell is provided. The electrochemical cell comprises a cathode compartment, wherein a metal in a solid form is disposed in the cathode compartment. The electrochemical cell further comprises a separator, an anode compartment, and at least one contact device disposed in the cathode compartment or in the anode compartment. The contact device is suspended from the top of the electrochemical cell in the cathode compartment or in the anode compartment. The electrochemical cell is in a ground state. An electrochemical cell during its working is also provided. Methods for using and manufacturing the electrochemical cell are also provided. The electrochemical cell is used to determine a state-of-charge of a source.
US08766638B2 Locate apparatus with location tracking system for receiving environmental information regarding underground facility marking operations, and associated methods and systems
In a locate operation to detect a presence or absence of at least one underground facility using a locate device, an applied signal is transmitted to the at least one underground facility, and/or a magnetic field emitted from the at least one underground facility is detected. Based on the indication of the location provided by a location tracking system, environmental information is obtained regarding at least one environmental condition of an environment in which the locate device is used, and logged into local memory of the locate device.
US08766634B2 Method and device of estimating a dose of ionizing radiation
A device of estimating a dose of ionizing radiation absorbed in an intra bone volume. The device comprises a static magnetic field source adapted to generate a substantially static magnetic field in a probing space having a volume of less than 2 cubic millimeter (mm3), the probing space being placed in front of a distal end of static magnetic field source, a micro resonator mounted in adjacent to the distal end, and at least one transmission line which feeds the resonator so as to generate an microwave magnetic field at the probing space and to transmit a signal returned from said microwave magnetic field and indicative of radiation induced paramagnetic defects in said probing space so as to allow a spectrometer to compute a dose of ionizing radiation absorbed in a portion of a bone placed in the probing space according to an analysis of the signal. The static magnetic field source being sized and shaped to maneuver the probing space to overlap with an intra bone volume of the bone.
US08766632B2 Magnetic resonance device, reflector array and high-frequency shield system for a magnetic resonance device
A magnetic resonance device with a measurement chamber, an antenna arrangement that has a plurality of antenna elements arranged at least in certain areas around the measurement chamber, a gradient coil system arranged outside the antenna arrangement as seen from the measurement chamber, and a high-frequency shield system arranged between the antenna arrangement and the gradient coil system are provided. The high-frequency shield system has a reflector array with a plurality of passive reflector resonance circuits, each of which is configured such that resonance frequencies of the plurality of passive reflector resonance circuits lie below an operating magnetic resonance frequency of the magnetic resonance device and that the plurality of passive reflector resonance circuits has an inductive overall impedance.
US08766627B2 Angle position sensor
The present invention discloses an angular position sensor, which includes a rotor core as well as a stator core coaxially around this rotor core. Between the rotor core and the stator core is a first air gap, and inside the rotor core a second air gap, which is provided inside with a hard magnet. The stator core has a third air gap inside, which is provided inside with a magnetic flux sensing element. It is obvious that the present invention, by substituting the combination of the hard magnet and the rotor core for the design of ring magnet in the prior art, obtains the good linearity within a wider range.
US08766626B2 Rotation path detection device
The invention relates to a rotation path detection device for vehicles of public transportation having a drive device (20) for an entry/exit apparatus, which is mounted so it can be pivoted and/or displaced. Said apparatus has a drive unit (22), an electric drive motor (44), and a first reduction gear (26) and a second reduction gear (72), which is connected to the drive motor (44), having a sensor for ascertaining the position of the reduction gear.
US08766624B2 Position detector and position detection method
In a position detector having two sensors, a first sensor detects a position indicated by a first indicator by electromagnetic induction and a second sensor detects a position indicated by a second indicator by a detection method other than electromagnetic induction. The position detector reduces adverse effects of the transmission signal supplied to the second sensor on the electromagnetic induction position detection circuit. The position indication state of the first and second indicators is determined based on a signal output from the first sensor according to the position indication by the first indicator on the first sensor and a signal output from the second sensor according to the position indication by the second indicator on the second sensor. According to the determination results of the position indication state, the level of the transmission signal provided to the second sensor to detect the position indication by the second indicator is controlled.
US08766621B2 Analog input module for a programmable logic controller
An analog input module for a programmable logic controller, wherein the analog input module has a ground potential, and includes a channel output configured at a first electrical potential, a first channel input configured at a second electrical potential where the absolute value of the second electrical potential is less than the absolute value of the first electrical potential and greater than the absolute value of the ground potential. The analog input module also includes a second channel input, and a third channel input, where the ground potential of the analog input module is the ground potential of the channel output, of the first channel input, of the second channel input and of the third channel input.
US08766619B2 Coax ribbonizing header
Disclosed herein is a system and method for identifying individual coaxial cables in a bundle of coaxial cables. The system includes a coaxial cable header that is configured for receiving one or more coaxial cables and establishing electrical conductive contact with only a conductive shield on a first end of each cable. The system also includes an electrical tester that is electrically connected to the coaxial cable header such that the electrical tester is configured to transmit signals through the conductive shields of each cable. The electrical tester includes a test probe that is configured to be selectively connected to a second end of each cable. The electrical tester is configured to identify whether the second end of a particular cable that is connected to the test probe corresponds with the first end of a pre-determined cable that is within the coaxial cable header.
US08766613B2 Method of operating voltage regulator
A method of operating a voltage regulator circuit includes generating a control signal by an amplifier of the voltage regulator circuit. The control signal is generated based on a reference signal at an inverting input of the amplifier and a feedback signal at a non-inverting input of the amplifier. A driving current flowing toward an output node of the voltage regulator circuit is generated by a driver responsive to the control signal, and the driver is coupled between a first power node and the output node. The feedback signal is generated responsive to a voltage level at the output node. A transistor, coupled between the output node and a second power node, is caused to operate in saturation mode during a period while the voltage regulator circuit is operating.
US08766612B2 Error amplifier with built-in over voltage protection for switched-mode power supply controller
An error amplifier includes a first amplification circuit with a reference signal input and a feedback signal input representing the amplitude of a load voltage of a switched mode power supply. The error amplifier includes a difference amplifier providing a difference signal representing a difference between the reference signal and the feedback signal, provided for determining the duty cycle of a switching signal in the switched mode power supply. The first amplification circuit further includes a control circuit providing a control signal generated as a function of the difference between the reference signal and the feedback signal.The error amplifier also includes a second amplification circuit, included in a compensation circuit. The second amplification circuit receives the control signal, and the operating current of the second amplification circuit is adjusted by an amount indicated by the control signal.
US08766610B2 Multi-stage voltage regulator
Provided is a voltage regulator capable of reducing an influence of an offset to obtain an accurate output voltage. The voltage regulator includes: a first stage amplifier for amplifying and outputting a difference between a reference voltage and a divided voltage obtained by dividing a voltage output by an output transistor, to thereby control a gate of the output transistor; and a cascode amplifier circuit, in which the first stage amplifier includes: a first high breakdown voltage NMOS transistor as an input transistor; and an NMOS transistor as a tail current source, and in which the cascode amplifier circuit includes a second high breakdown voltage NMOS transistor as a cascode transistor.
US08766608B2 Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.
US08766607B2 Power conversion device using a wave propagation medium and operating method thereof
The present solution relates operation of a power conversion device (200, 500). A first gate (205, 505) is operated (901) to provide a voltage pulse (309,609) travelling from an input (201,501) to a wave propagation medium (105) through the first gate (205,505). The voltage pulse has duration (307,607) less than the propagation time through the medium (105) to one end of the medium (105) and back to the input (201,501). The pulse generates a reflected wave. The first gate (205,505) is operated (902) periodically providing a voltage pulse in synchronization with the reflected wave to accumulate the reflected wave travelling in the medium (105), performing the accumulation through an accumulation interval (303,603). A second gate (207,507) is operated (903) periodically to provide a discharge pulse (312,612) in synchronization with the reflected wave to discharge the wave travelling in the medium (105), performing the discharge through a discharge interval (310,610).
US08766606B2 Power array for high power pulse load
A controlled power supply comprising: a) an array of low voltage current sources; b) a plurality of switch power supplies coupled to each of the storage capacitors and respective ones of the pulse loads being coupled to each of the switch power supplies; c) each of the storage capacitors being configured for storing energy during an inactive portion of a load switching cycle of the respective switch power supply to which the corresponding storage capacitor is coupled when the pulse loads are inactive; d) a respective output capacitor in association with each of the switch power supplies for feeding voltage to the respective pulse loads during an active portion of the load switching cycle; and e) the respective storage capacitor being configured for supplying the stored energy via the respective to the respective switch power supply to which the storage capacitor is coupled to each of the pulse loads coupled to switch power supply during an active portion of the load switching cycle.
US08766601B2 Multi-mode power management unit
According to one exemplary embodiment, a multi-mode power management unit (PMU) includes a number of switchable conductive paths, where each of the switchable conductive paths corresponds to at least one of a number of power modes. The multi-mode PMU further includes a shared inductor residing in each of the switchable conductive paths. A current can flow through the shared inductor in a same direction in each of the power modes. The multi-mode PMU further includes a controller configured to set one of the power modes using one of the switchable conductive paths. The power modes can include a battery-to-electronic system power mode and a charge-battery power mode. The power modes can further include a battery-to-electronic system/camera flash power mode, a power port-to-electronic system/battery power mode, and a battery-to-electronic system/backlight LED power mode.
US08766590B2 Energy storage system of apartment building, integrated power management system, and method of controlling the system
An energy storage system of an apartment building, an integrated power management system, and a method of controlling the integrated power management system. Power may be efficiently consumed by supplying remaining power stored in an energy storage system of each apartment to a common load.
US08766588B2 Rate limited common mode control for pulse-width modulation drives
A method for pulse width modulation control of a multiple phase drive includes identifying at least one phase from the plurality of phases for the drive as eligible for clamping to one of a plurality of extreme power supply voltages, selecting a phase of the eligible phases having a largest magnitude driving current, determining a first offset signal as a difference between a control signal level for the selected phase and an extreme control signal level corresponding to one of the extreme power supply voltages, limiting a rate of change of the first offset signal to form a second offset signal, and determining a modified control signal for each of the phases for the drive including forming for each of a plurality of the phases a combination of the second offset signal and a control signal level for the phase to determine the modified control signal for the phase.
US08766583B1 Voltage mode using pseudo current limit
According to an aspect of the invention, an apparatus includes: a spindle motor; and circuitry configured to spin up the spindle motor by increasing a command voltage in small steps while monitoring a current flowing through the spindle motor. According to another aspect of the invention, a method includes: spinning up a spindle motor from a stationary state to a target speed using a voltage mode of operation for the spindle motor, wherein the spinning up includes supplying to the spindle motor a series of multiple discrete voltage levels ranging from a first voltage level to a second voltage level; and maintaining the spindle motor at the target speed.
US08766582B2 Trash can with power operated lid
A trash can with a power operated lid can include a sensor assembly and a lifting mechanism. The sensor assembly can include at least one light emitter and at least one light receiver, the viewing area of the at least one light receiver being limited in size. The lifting mechanism can include a controller, a drive motor, and a lifting member. The trash can with power operated lid can further include at least one position sensor for detecting the position of the lid.
US08766577B2 Three-phase rotary machine control apparatus
A first inverter and a second inverter supply two coil sets forming a three-phase motor with AC voltages, which are the same in amplitude but shifted by 30° in phase. Current detectors detect phase currents supplied from the inverters to the coil sets. Temperature estimation sections estimate temperatures of the inverters or the coil sets based on an integration value of the phase current detection values. A current command value limitation section limits upper limits of current command values of both coil sets based on the estimated temperatures Tm1 and Tm2. Thus, the inverters and the coils sets are protected from overheating without increasing torque ripple.
US08766574B2 Method and control device for operating a three-phase brushless direct current motor
A method and a control device operate a three-phase brushless direct current motor with phase windings that are fed by an inverter connected to a voltage source having a high potential and a low potential. The semiconductor switches of the inverter are arranged in a bridge circuit and are controlled such that current always flows through two phase windings during motor operation. The motor is operated with normal commutation when the rotational speed is greater than or equal to a minimum rotational speed, wherein the angles are shifted by 60°. During start-up operation, up to the minimum rotational speed, a high-potential-side commutation angle of a phase winding is shifted toward a low-potential-side commutation angle of the phase winding by an angle greater than 0° and less than or equal to 60° with respect to the normal commutation.
US08766573B2 Systems for heating, ventilation, and air conditioning applications
A motor control system for heating, ventilation, and air conditioning (HVAC) applications is described. The motor control system includes a thermostat and an electronically commutated motor (ECM) coupled to the thermostat. The ECM is configured to retrofit an existing non-ECM electric motor included in an HVAC application and to operate in one of a plurality of HVAC modes. The HVAC modes include at least one of a heating mode, a cooling mode, and a continuous fan mode. The HVAC mode is determined based at least partially on outputs provided by the thermostat.
US08766572B2 Method and apparatus for controlling pulse-width modulation in an electric motor
In a method of controlling current in a control circuit of an electric motor, pulse-width modulation (PWM) pulses are applied to a stator of the electric motor, via a plurality of transistors of the control circuit, using a first control mode when a rotational speed of a rotor of the electric motor is within a first range. At least one PWM pulse is applied to the stator, via a subset of the plurality of transistors, using a second control mode when the rotational speed of the rotor is within a second range. When it is determined that the rotational speed of the rotor has changed from being within the second range to being within the first range, additional PWM pulses are applied to the stator such that, for each of the plurality of transistors, a current through the transistor does not exceed a maximum current capacity of the transistor.
US08766571B2 Method and apparatus for controlling an electrical machine
An observer (404), operating during a time when open loop control (402) is being used to drive a synchronous motor (401), the output of the observer (404) being a signal, E_I_angle, related to the angle between a rotational EMF vector and the current excitation vector, the observer (404) determining the angle by an iterative calculation incorporating a summation term, the summation term summing the variation of the quadrature component of a rotational EMF vector relative to an estimated EMF position vector, and using the angle output of the observer to update the estimate of the rotational EMF position vector. In a further aspect of the invention the observer output signal, E_I_angle, can be used to determine the transition to closed loop control (405), when the observer output signal reaches a value indicating conditions close to pull out conditions.
US08766567B2 Battery control and protective element validation method
A method, system and device for discharging power or validating protective elements of a power source to ensure proper functioning of a tool at various temperatures. The power source communicates with a switch using handshake signals to establish a scheme for power distribution depending on the temperature of the power source. The power source can discharge power at a normal start-up rate or a slower start-up rate depending on the temperature of the power source. Handshake signals can also be used to validate protective elements, where the protective elements respond to wake-up signals with respective handshake signals indicating that the protective elements are functioning property.
US08766562B2 Adjustment device for adjusting a relative rotational angle position of two shafts and method for operating an actuator, particularly of such an adjustment device
An adjustment device for adjusting a relative rotational angle position of two shafts (particularly a cam shaft and a crank shaft of an internal combustion engine) that has an adjusting gear which is designed as triple shaft gear and has a drive part connected to a first shaft (crank shaft), a driven part connected to a second shaft (cam shaft), and an adjustment shaft connected to a servomotor shaft of an electric servomotor in a rotationally fixed manner. In order to implement a wide temperature range for the operation of the adjustment device, a temperature sensor is arranged in the servomotor. In a method for operating an adjustment device or an actuator, the current of the servomotor or the actuator is controlled depending on the temperature that was determined earlier.
US08766561B2 LED lighting device with output impedance control
An LED lighting device is provided with output impedance control to stabilize an optical output across a wide current range. A switching power supply generates the output current, with switching control circuitry to determine switching frequency and an ON period for an associated switch, and to turn on/off the switch according to the determined frequency and ON period. An impedance element is coupled across output terminals for the lighting device, with an impedance value set so that a load current is larger than a current flowing to the impedance element at maximum on-duty of the switch and a current flowing to the impedance element is larger than the load current at minimum on-duty. The impedance element may be a variable impedance element, wherein an impedance control circuit adjusts the variable impedance such that an impedance value for minimum on-duty of the switch is smaller than that for a maximum on-duty.
US08766559B2 Constant power limiter and illumination device having same
A constant power limiter includes a control circuit and a power source circuit thereof, and the control circuit includes a voltage detection circuit configured for detecting a voltage of power source; a current detection circuit configured for detecting a load current; a zero-cross detection circuit configured for detecting a zero-cross point of AC power; a load driving circuit including a controlled silicon; and a micro control unit (MCU) configured for receiving output signals from the voltage detection circuit, the current detection circuit, and the zero-cross detection circuit, and outputting a control signal respectively to the load driving circuit to control a load power, wherein when the load power is less than or equal to a set power value, the load driving circuit has the controlled silicon fully open, when load power is no less than the set power value, the load driving circuit has the controlled silicon conduction angle decreased to stabilize the load power at the set power value.
US08766553B2 Serial-type light-emitting diode (LED) device
A serial-type LED device includes p light source units and a dimming circuit. Each light source unit includes first and second terminals, m light strings and m current balance units. Each light string includes LEDs coupled in series to have a first terminal coupled to the first terminal of a corresponding light source unit and a second terminal coupled to the second terminal of the corresponding light source unit through a corresponding current balance unit. The first terminal of the first light source unit is coupled to a second DC voltage, and the second terminal of the i-th light source unit is coupled to the first terminal of the (i+1)-th light source unit, where m and p are integers greater than or equal to 2 and i is any integer from 1 to (p−1). The dimming circuit coupled to the second terminal of the p-th light source unit controls the second DC voltage according to a current outputted from the p-th light source unit.
US08766551B2 Projector
A projector that outputs a first image and a second image alternately while performing switching between the first image and the second image, includes: a discharge lamp driving section that supplies, to a discharge lamp, a drive current that drives the discharge lamp; a state detecting section that detects a deteriorating state of the discharge lamp; and a control section that controls the discharge lamp driving section, wherein the control section controls the discharge lamp driving section so that the absolute value of the drive current becomes relatively small in a first period and relatively large in a second period and controls the discharge lamp driving section so that the ratio of the absolute value of the drive current in the second period to the absolute value of the drive current in the first period is increased with the progress of the deteriorating state.
US08766550B1 AC LED lighting apparatus using voltage edge detector
An AC LED lighting apparatus using a voltage edge detector is provided. The AC LED lighting apparatus includes: a rectification unit configured to rectify an AC voltage to output a DC rectified voltage; an LED unit including a first light emitting group and a second light emitting group each including at least one LED; and an LED driving control unit configured to control a serial/parallel connection relationship between the first light emitting group and the second light emitting group by comparing a voltage level of the rectified voltage input from the rectification unit with a reference voltage. The LED driving control unit sets the reference voltage by detecting a slope of the rectified voltage and simultaneously detecting the voltage level of the rectified voltage and the detected slope of the rectified voltage.
US08766549B2 HID lighting system
A low-cost HID lighting system (100) comprises: —an HID lamp (1) having an aspect ratio less than 6; and —a resonant electronic driver (10) for driving the HID lamp, the driver being designed for providing alternating current to the lamp and including a control device (30) for determining the current frequency. The lamp has a frequency spectrum containing at least one arc-shaping acoustic resonance frequency as well as unwanted acoustic resonance frequencies. During normal operation, the lamp is provided with frequency-modulated lamp current so that the lamp current has a relatively broad power spectrum within a range between kHz and 200 kHz, so that said arc-shaping acoustic resonance is triggered while said unwanted acoustic resonances are avoided, irrespective of lamp orientation.
US08766546B2 LED drive device and LED illuminating device
An LED drive device whose power dissipation can be effectively reduced without halting current supply to an LED row as well as an LED illuminating device with the LED drive device incorporated therein. When an LED 21A making up an LED row 3A has developed a short-circuit fault, a voltage corresponding to a forward voltage which has been applied to the faulty LED 21A is impressed additionally to an FET 31A for electric power consumption thereof to increase to not less than a certain value. At this time, a power limiting circuit 6A varies a potential, being a reference value of a constant current circuit 7A, at a connecting point between voltage dividing resistors 46A, 47A and then continues to supply a certain level of a current IF1 to the LED row 3A so as to keep the remaining fault-free LEDs 22A to 26A lighting. Consequently, in the event of a short-circuit fault of the LED 21A, the adverse effect caused by discontinuing the current supply to the LED row 3A can be swept away.
US08766537B2 Infrared halogen lamp with improved efficiency
Methods for improving the efficiency of infrared (IR) halogen lamps and IR halogen lamps having improved efficiency are disclosed. In a method of aligning a filament in a lamp body, the lamp body having the filament therein is rotated, and tubular end portions are heated and necked down which may assist in positioning the filament within the lamp and reduce end losses. IR halogen lamps formed from glass tubes having an OD less than 5 mm are also disclosed. The reduced diameter of the glass tubing increases the surface area for IR energy reflection and reduces end losses. Spuds or beads may be used to position the filament within the lamp.
US08766532B2 Flexible display device and method for using the same
A flexible electrode array substrate includes a flexible base and a plurality of pixel electrodes. The pixel electrodes are disposed on the flexible base and arranged in an array. The size of one of the pixel electrodes is different from that of another of the pixel electrodes. In addition, another flexible electrode array substrate including a flexible base and a plurality of bar electrodes is also provided. The bar electrodes are disposed on the flexible base and arranged in an array. The size of one of the bar electrodes is different from that of another of the bar electrodes. Besides, a flexible display device having one of the said flexible electrode array substrates is also provided.
US08766529B2 Metal complexes of cyclometallated imidazo[1,2-ƒ]phenanthridine and diimidazo[1,2-a:1',2'-c]quinazoline ligands and isoelectronic and benzannulated analogs thereof
Compounds comprising phosphorescent metal complexes comprising cyclometallated imidazo[1,2-f]phenanthridine and diimidazo[1,2-a:1′,2′-c]quinazoline ligands, or isoelectronic or benzannulated analogs thereof, are described. Organic light emitting diode devices comprising these compounds are also described.
US08766528B2 Phosphor and LEDs containing same
There is herein described a phosphor for use in white pc-LED applications. The phosphor has a composition represented by (Y1-x-yGdxCey)3(Al1-zScz)5O12 wherein 0
US08766526B2 Light-emitting device package providing improved luminous efficacy and uniform distribution
Disclosed is a light-emitting device package including; a body having a cavity formed therein, a light source mounted in the cavity, a resin layer which fills the cavity and is transmissive, and at least one optical sheet provided on the resin layer, wherein the optical sheet includes a first layer, and a second layer which is provided on the first layer and has a plurality of linear prisms, wherein the first layer has a first refractive index and the resin layer has a second refractive index, and wherein the first refractive index is equal to or greater than the second refractive index. Accordingly, the light-emitting device package may have improved luminous efficacy, enable uniform distribution of emitted light, and prevent degradation of a phosphor.
US08766522B1 Carbon nanotube fiber cathode
Improved field emission cathodes comprise a fiber of highly aligned and densely packed single-wall carbon nanotubes, double-wall carbon nanotubes, multi-wall carbon nanotubes, grapheme nanoribbons, carbon nanofibers, and/or carbon planar nanostructures. The fiber cathodes provide superior current carrying capacity without degradation or adverse effects under high field strength testing. The fibers also can be configured as multi-fiber field emission cathodes, and the use of low work function coatings and different tip configurations further improves their performance.
US08766519B2 Electrode material for a spark plug
An electrode material for use with spark plugs and other ignition devices, where the electrode material includes ruthenium (Ru), plus one or more additional constituents like precious metals, refractory metals, active elements, metal oxides, or a combination thereof. In one example, the electrode material is a multi-phase material that has a matrix phase including ruthenium (Ru) and one or more precious metals, refractory metals and/or active elements, and a dispersed phase including a metal oxide. The metal oxide may be provided in particle form or fiber/whisker form, and is dispersed throughout the matrix phase. A powder metallurgy process for forming the electrode material into a spark plug electrode is also provided.
US08766517B2 Organic light emitting device with conducting cover
The claimed invention was made by, on behalf of, and/or in connection with one or more of the following parties to a joint university corporation research agreement: Princeton University, The University of Southern California, The University of Michigan and Universal Display Corporation. The agreement was in effect on and before the date the claimed invention was made, and the claimed invention was made as a result of activities undertaken within the scope of the agreement.
US08766510B2 Actuator
The invention relates to a method of making an actuator comprising a plurality of force elements and an actuator made according to the method. The method comprises providing a coupler for coupling force from the force elements to a load; calculating a transfer function for each force element wherein the transfer functions allow the force provided to the load to be predicted; determining an error functional which is indicative of any undesired dips in the predicted force; calculating the parameters of the force elements which minimize the error functional, and coupling force elements having the calculated parameters to the coupler to make the actuator.
US08766508B2 Rotor for a motor and connecting pin for the rotor
A rotor for a motor is provided including: a rotor core including at least one a first coupling portion on an outer circumference thereof, wherein the first coupling portion includes a first coupling groove or a first coupling projection; at least one division core spaced apart from the rotor core and including a second coupling portion on an outer circumference thereof, the second coupling portion including a second coupling groove or a second coupling projection; and a connecting pin including a third coupling portion and a fourth coupling portion, the third coupling portion to be coupled to the first coupling portion and the fourth coupling portion to be coupling to the second coupling portion.
US08766505B2 Rotating electrical machine and method for manufacturing rotating electrical machine
Provided are a rotating electrical machine and a method for manufacturing the rotating electrical machine, wherein the tapered surface of a plate-side tapered section and the tapered surface of a shaft-side tapered section are bonded with pressure by having forces operate between a plurality of plate-side protruding sections and a plurality of shaft-side protruding sections n the directions wherein the plate-side protruding sections and the shaft-side protruding sections are separated from each other. Thus, a ring core is fixed to a shaft.
US08766498B2 Electric generator with cooling system and hybrid vehicle incorporating electric generator
An electric generator incorporated into a hybrid vehicle including an engine and an electric drive motor and actuated by the engine, comprises a rotor mounted to one end portion of a crankshaft of the engine such that the rotor is rotatable integrally with the crankshaft; a cylindrical accommodating member surrounding an outer periphery of the rotor; and an air outlet provided on a peripheral wall portion of the accommodating member such that the air outlet opens in the vicinity of the outer periphery of the rotor and is tilted in a forward direction of a rotational direction of the rotor and in a radially outward direction.
US08766497B2 Rotating electrical machine
A motor-generator which is a rotating electrical machine is provided with a coil end cover and a plurality of connecting wires. The coil end cover forms a cooling oil passage around a coil end portion and a cooling oil passage around a coil end portion, and a cooling oil communicating passage that communicates the cooling oil passage with the cooling oil passage on the inside of the stator core. The plurality of connecting wires are provided in the cooling oil passage. The direction in which the cooling oil flows in the cooling oil passage is the same as the direction in which the connecting wires extend at an angle from the radial outside to the radial inside of the stator core. The flowrate of cooling oil in the cooling oil passage is set larger than the flowrate of cooling oil in the cooling oil passage.
US08766495B2 Power generation element and power generation apparatus including the power generation element
A power generation element includes: a first nnagnetostrictive rod made of a nnagnetostrictive material; a rigid rod made of a magnetic material and disposed in parallel with the first nnagnetostrictive rod, the magnetic material having rigidity and a shape that enable uniform application of a compression or tensile force to the first nnagnetostrictive rod; a first coil wound around the first nnagnetostrictive rod; and two connecting yokes, each of which is provided at one end of each of the first nnagnetostrictive rod and the rigid rod to connect the first nnagnetostrictive rod and the rigid rod; wherein the power generation element generates power through expansion or contraction of the first nnagnetostrictive rod due to vibration in a direction perpendicular to a longitudinal axis of the first nnagnetostrictive rod.
US08766493B2 Magnetic stator assembly
An electric device including: a stator assembly; and an actuator including a coil having an axis, wherein the stator assembly includes: a stator core arranged along a linear axis, the stator core made up of a plurality of magnets each characterized by a magnetic moment, the plurality of magnets arranged in a stack along the linear axis with the magnet moments of the plurality of magnets being co-linearly aligned parallel to the linear axis, wherein the plurality of magnets includes a first magnet and a second magnet positioned adjacent to each other in the stack separated by a gap and with their magnetic moments in opposition to each other, and wherein the actuator is arranged on the stator core with the coil of the actuator encircling the linear axis with the axis of the coil parallel to the linear axis.
US08766491B2 Load control apparatus with peak reduction in aggregate behavior
When load control is activated by a local or remote mechanism to control a load, the method and system use a usage profile of the load and one or more of (1) interval start times, (2) ON/OFF or OFF/ON cycling and (3) predefined periods during which load must not be allowed to run (e.g., dead zones) to determine when a particular piece of equipment is allowed to shed or run thereby reducing the probability of occurrence of cyclical and non-cyclical aggregate peaking of usage wherein cyclical peaking is manifested as an artifact of the local load control rules during a load control event.
US08766489B2 Active transfer time delay for automatic transfer switch
An automatic transfer switch includes first and second inputs inputting first and second voltages; a first output outputting a start signal; a first timer timing a first time after the second voltage is available; a second timer delaying for up to a second time before outputting a transfer signal, the second time being reduced by the first time when the second voltage is available; a transfer mechanism selectively electrically connecting one of the inputs to a second output; and a circuit cooperating with the inputs and the transfer mechanism, causing the start signal to be output responsive to the voltages not being available, and causing the transfer mechanism to electrically connect the second input to the second output in response to the transfer signal.
US08766484B2 Magnetic positioning for inductive coupling
A magnetic positioning system for use in inductive couplings. The magnetic positioning system having a magnet that provides sufficient magnetic force, but does not have enough electrical conductivity to overheat in the presence of the anticipated electromagnetic field. The magnet may be a bonded magnet or a shielded magnet. In another aspect a plurality of magnets are used to provide magnetic attraction forces and said magnetic repulsion forces that cooperate to align the inductive power supply and the remote device. In another aspect, a sensor allows differentiation between different positions of the remote device or inductive power supply. In another aspect, multiple magnets in the inductive power supply interact with multiple magnets in the remote device to position the remote device in different positions.
US08766483B2 Wireless power range increase using parasitic antennas
Wireless power transfer is created using a first antenna that is part of a magnetic resonator, to create a magnetic field in an area of the first antenna. One or more parasitic antennas repeats that power to create local areas where the power is more efficiently received.
US08766481B2 Reduction of inrush current due to voltage sags with switch and shunt resistance
Various systems and methods are provided for minimizing an inrush current to a load after a voltage sag in a power voltage. In one embodiment, a method is provided comprising the steps of applying a power voltage to a load, and detecting a sag in the power voltage during steady-state operation of the load. The method includes the steps of adding an impedance to the load upon detection of the sag in the power voltage, and removing the impedance from the load when the power voltage has reached a predefined point in the power voltage cycle after the power voltage has returned to a nominal voltage.
US08766479B2 System and method for paralleling electrical power generators
A plurality of generators can be connected in parallel to a common electrical bus. Each generator has a controller that regulates the voltage and frequency of the electricity being produced. Before a given generator connects to the electrical bus, its controller senses whether electricity is present on the bus and if not, the connection is made. Otherwise, the controller synchronizes the electricity being produced to the electricity is present on the bus before the connection occurs. The controller in each generator may also implement a load sharing function which ensures that the plurality of generators equitably share in providing the total amount of power demanded by the loads. The load sharing can be accomplished by controlling the generators to operate a substantially identical percentages of their individual maximum power generation capacity.
US08766475B2 System and method for a redundant and keyed power solution
In accordance with the present disclosure, a system and method a power deliver system is presented. The power delivery system includes at least two power supplies with a bridge connecting an output of each of the at least two power supplies. The bridge may be made of busbars, each of which including an integral attachment point. Each of the attachment points may correspond to a lug which has been specifically keyed to the shape of the attachment point. The lugs may be attached to conductor cables that provide power from the power supplies to components in an information handling system. In some embodiments, each end of a conductor cable may include lugs of the same shape, to ensure that the correct voltage is supplied to the components of the information handling system.
US08766472B2 Apparatus for shutting off power supply for vehicle
An apparatus for shutting off a power supply for construction equipment or a vehicle driven by an engine, including a power supply, functional electrical devices connected to the power supply, a key switch managing the power supply, and a main relay applying or shutting off the power supply to the functional electrical devices in accordance with the state of the key switch, which includes a manipulation sensing means, a control relay installed between the key switch and the main relay to apply a key switch signal to a driving unit of the main relay if the electricity is not applied to its driving unit and to shut off the key switch signal to the driving unit of the main relay if the electricity is applied to its driving unit, and a controller receiving a manipulation signal from the manipulation sensing means and shutting off the power by driving the control relay if there is no manipulation signal for a predetermined time. If the equipment is not used for a predetermined time, the engine is stopped even under the condition that the engine is being driven, and even if the key switch is in a turned-on state, the power that is supplied to the functional electrical devices can be stably intercepted by the controller.
US08766469B2 Method and installation for producing supplementary electrical energy
An installation for producing supplementary electrical energy for an electricity network includes at least first and second water reservoirs, the first water reservoir being situated at a first level and the second water reservoir being situated at a second level lower than the first level, a communicating pipe between the first water reservoir and the second water reservoir being provided with a remote-controlled valve, and a hydro-electric generating system being provided with a pumping installation. The first and/or second water reservoir is integrated in the foundations in the lower portion of an artificial building that needs to be built for a primary function independently of a secondary function of producing electricity. The first water reservoir or the second water reservoir may constitute a common body of water in the vicinity of ground level. The water reservoirs integrated in foundations of buildings may in particular cooperate with installations for air-conditioning or heating the buildings at the base of which they are constructed, or associated buildings.
US08766468B1 Rotor for a permanent magnet electrical machine of a mobile working machine
A rotor for a permanent magnet electrical machine includes a ferromagnetic core structure having cavities which divide the ferromagnetic core structure into pole regions (103), a yoke region (104), and bridges (105, 106) between them. The rotor includes permanent magnets (107, 108) located in the cavities and arranged to produce magnetic fluxes penetrating the pole regions so as to form magnetic poles of the rotor. The cavities have portions which extend towards the quadrature-axis (Q) and are free from the permanent magnets. Thus, non-ferromagnetic regions for reducing leakage fluxes of the permanent magnets are being formed. Furthermore, the portions of the cavities have a shape curving towards the geometrical rotation axis of the rotor. As the portions of the cavities have the shape curving towards the rotation axis, the cavities can be made longer and the routes of the leakage.
US08766467B2 Wind turbine with a generator
A wind turbine with a generator is provided. The wind turbine includes a rotor comprising permanent magnets; a stator comprising stator coils mounted in or on a stator housing structure; a generator contactor electrically connected to the stator and to a converter, the generator contactor disposed in or on the stator housing structure.
US08766465B2 Systems, apparatuses and methods for the transmission and recovery of energy and power
Systems and apparatuses for delivering power and energy using deflecting beams or other oscillating members motivated to oscillate a beam assembly using an eccentrically balanced rotating body that induces deflections in the elastic beam or other oscillating member. One or more rotors may be used on the elastic beams and a mechanical output or outputs are connected to the elastic beams. The rotating body is advantageously maintained in rotation by pulses of electro-magnetic force. The oscillating beam or members are preferably driven at a natural resonant frequency to minimize losses and render more efficient the output which can be obtained. The pulse motor or motors can be powered using stored electrical energy, such as may be generated from solar panels, wind generators or other energy storage devices. One or more outputs may be used to drive heat pumps, compressors, pumps or other equipment to assist in independent energy systems.
US08766463B2 Package carrier
A package carrier includes a metal substrate, a pad, a dielectric layer, and a circuit layer. The metal substrate has a first surface and a second surface opposite to the first surface. The pad is disposed on the first surface. The dielectric layer is disposed on the first surface and covers the pad. A thickness of the dielectric layer is less than 150 μm. The circuit layer is embedded in the dielectric layer and connected to the pads.
US08766462B2 Dicing tape-integrated wafer back surface protective film
The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.
US08766460B2 Package with interposer frame and method of making the same
Embodiments of mechanisms of utilizing an interposer frame to form a package using package on package (PoP) technology are provided in this disclosure. The interposer frame is formed by using a substrate with one or more additives to adjust the properties of the substrate. The interposer frame has through substrate holes (TSHs) lined with conductive layer to form through substrate vias (TSVs) with solder balls on adjacent packages. The interposer frame enables the reduction of pitch of TSVs, mismatch of coefficients of thermal expansion (CTEs), shorting, and delamination of solder joints, and improves mechanical strength of the PoP package.
US08766458B2 Surface depressions for die-to-die interconnects and associated systems and methods
Stacked microelectronic dies employing die-to-die interconnects and associated systems and methods are disclosed herein. In one embodiment, a stacked system of microelectronic dies includes a first microelectronic die, a second microelectronic die attached to the first die, and a die-to-die interconnect electrically coupling the first die with the second die. The first die includes a back-side surface, a surface depression in the back-side surface, and a first metal contact located within the surface depression. The second die includes a front-side surface and a second metal contact located at the front-side surface and aligned with the first metal contact of the first die. The die-to-die interconnect electrically couples the first metal contact of the first die with the second metal contact of the second die and includes a flowable metal layer that at least partially fills the surface depression of the first die.
US08766457B2 Bonding structure of semiconductor package, method for fabricating the same, and stack-type semiconductor package
A bonding structure of a semiconductor package includes: a first conductive member configured to transmit an electrical signal; and a bonding pad configured to be electrically coupled to a surface of the first conductive member and comprising a plurality of sub bonding pads.
US08766456B2 Method of fabricating a semiconductor package
A method of fabricating a semiconductor package is provided, including: disposing a semiconductor element on a carrier; forming an encapsulant on the carrier to encapsulant the semiconductor element; forming at least one through hole penetrating the encapsulant; forming a hollow conductive through hole in the through hole and, at the same time, forming a circuit layer on an active surface of the semiconductor element and the encapsulant; forming an insulating layer on the circuit layer; and removing the carrier. By forming the conductive through hole and the circuit layer simultaneously, the invention eliminates the need to form a dielectric layer before forming the circuit layer and dispenses with the conventional chemical mechanical polishing (CMP) process, thus greatly improving the fabrication efficiency.
US08766450B2 Lead pin for package substrate
There is provided a lead pin for a package substrate including: a connection pin being inserted into a hole formed in an external substrate; a head part formed on one end of the connection pin; and a barrier part formed on one surface of the head part in order to block the path of a solder paste so that the solder paste is prevented from flowing so as to cover the upper portion of the head part when the head part is mounted on the package substrate.
US08766440B2 Wiring board with built-in semiconductor element
A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer.
US08766437B2 Electrode structure, wiring body, adhesive connection structure, electronic device, and method for fabricating same
There is provided an electrode structure to be electrically connected to a connection conductor by being bonded thereto with an anisotropic conductive adhesive mainly composed of a thermosetting resin, the electrode structure including an electrode for connection using an adhesive, the electrode being arranged on a base material, and an organic film serving as an oxidation preventing film configured to cover a surface of the electrode for connection using an adhesive, in which the organic film has a higher decomposition temperature than the maximum temperature of heat treatment to be performed. A wiring body and a connecting structure using an adhesive are also provided.
US08766434B2 Semiconductor module with micro-buffers
The semiconductor module includes a plurality of memory die on a first side of a substrate and a plurality of buffer die on a second side of the substrate. Each of the memory die is disposed opposite and electrically coupled to one of the buffer die.
US08766433B2 Electronic chip having channels through which a heat transport coolant can flow, electronic components and communication arm incorporating said chip
The invention relates to an electronic chip, comprising: a semiconductor substrate (6) having an active area (8) formed by at least one P doped region and at least one N doped region which form one or more P-N junctions through which most of the useful current flows when said electronic chip is in a conductive state, and at least one channel (44) through which a heat transport coolant can flow, the channel(s) passing through at least said P or N doped region of the active area. Each channel (44) is rectilinear and passes through the substrate (6) in a direction which is collinear with a direction F to the nearest ±45°, where the direction F is perpendicular to the plane of the substrate.
US08766429B2 Semiconductor packages
A semiconductor package includes a first package including a first wiring board and at least one first semiconductor chip mounted on the first wiring board, a second package stacked on the first package. The second package includes a second wiring board and at least one second semiconductor chip mounted on the second wiring board. The semiconductor package further includes at least one connection terminal connecting a plurality of signal lines of the first and second wiring boards, respectively, with each other. The semiconductor package further includes at least one ground terminal connecting a plurality of ground lines of the first and second wiring boards, respectively, with each other, and includes a side surface, and a shielding member covering a top surface and a side surface of a structure including the first and second packages and the shielding member is disposed on the at least one ground terminal.
US08766424B2 Thin substrate PoP structure
A PoP (package-on-package) package includes a bottom package with a substrate encapsulated in an encapsulant with a die coupled to the top of the substrate. At least a portion of the die is exposed above the encapsulant on the bottom package substrate. A top package includes a substrate with encapsulant on both the frontside and the backside of the substrate. The backside of the top package substrate is coupled to the topside of the bottom package substrate with at least part of the die being located in a recess in the encapsulant on the backside of the top package substrate.
US08766421B2 Semiconductor power module and method of manufacturing the same
A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block.
US08766419B2 Power module having stacked flip-chip and method of fabricating the power module
Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.
US08766414B2 Deposited semiconductor structure to minimize N-type dopant diffusion and method of making
A memory cell is provided that includes a semiconductor pillar and a reversible resistance-switching element coupled to the semiconductor pillar. The semiconductor pillar includes a heavily doped bottom region of a first conductivity type, a heavily doped top region of a second conductivity type, and a lightly doped or intrinsic middle region interposed between and contacting the top and bottom regions. The middle region includes a first proportion of germanium greater than a proportion of germanium in the top region and/or the bottom region. The reversible resistivity-switching element includes a material selected from the group consisting of NiO, Nb2O5, TiO2, HfO2, Al2O3, CoO, MgOx, CrO2, VO, BN, and AlN. Numerous other aspects are provided.
US08766413B2 Semiconductor device and method for manufacturing semiconductor device
A p anode layer (2) is formed on one main surface of an n− drift layer (1). An n+ cathode layer (3) having an impurity concentration more than that of the n− drift layer (1) is formed on the other main surface of the n− drift layer (1). An anode electrode (4) is formed on the surface of the p anode layer (2). A cathode electrode (5) is formed on the surface of the n+ cathode layer (3). An n-type broad buffer region (6) that has a net doping concentration more than the bulk impurity concentration of a wafer and less than that of the n+ cathode layer (3) and the p anode layer (2) is formed in the n− drift layer (1). The resistivity ρ0 of the n− drift layer (1) satisfies 0.12V0≦ρ0≦0.25V0 with respect to a rated voltage V0. The total amount of the net doping concentration of the broad buffer region (6) is equal to or more than 4.8×1011 atoms/cm2 and equal to or less than 1.0×1012 atoms/cm2.
US08766409B2 Method and structure for through-silicon via (TSV) with diffused isolation well
A semiconductor device and method for forming the same provide a through silicon via (TSV) surrounded by a dielectric liner. The TSV and dielectric liner are surrounded by a well region formed by thermal diffusion. The well region includes a dopant impurity type opposite the dopant impurity type of the substrate. The well region may be a double-diffused well with an inner portion formed of a first material and with a first concentration and an outer portion formed of a second material with a second concentration. The surrounding well region serves as an isolation well, reducing parasitic capacitance.
US08766407B2 Semiconductor wafer and laminate structure including the same
According to one embodiment, a semiconductor wafer includes a semiconductor substrate and an interconnect layer formed on the semiconductor substrate. In the semiconductor wafer, the semiconductor substrate includes a first region that is located on the outer periphery side of the semiconductor substrate and that is not covered with the interconnect layer. The interconnect layer includes a second region where the upper surface of the interconnect layer is substantially flat. A first insulating film is formed in the first region. The upper surface of the interconnect layer within the second region and the upper surface of the first insulating film substantially flush with each other.
US08766406B2 Self-aligned implants to reduce cross-talk of imaging sensors
A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate. The method includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements and starting at a distance below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with a top portion of the deep doped region.
US08766400B2 Electronic device containing passive components and fabrication method thereof
An electronic device and fabrication method thereof are provided. The electronic device contains a glass substrate, a patterned semiconductor substrate, having at least one opening, disposed on the glass substrate and at least one passive component having a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed between the patterned semiconductor substrate and the glass substrate.
US08766399B2 Semiconductor device
To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
US08766396B2 Vibration noise shield in a semiconductor sensor
A semiconductor device comprises a substrate, a cathode, an outer ring, an anode, an electrically insulating layer, and an electrically conducting layer. The substrate includes a semiconducting material having a first conduction type. The substrate has a first face and a second face substantially parallel to the first face. A cathode is disposed at the second face and has the first conduction type. An outer ring, having the first conduction type, is disposed at an outer perimeter of the first face of the substrate. An anode, having the second conduction type, is disposed at the first face of the substrate within an inner perimeter of the outer ring. An electrically insulating layer is disposed over the outer ring. An electrically conducting layer is disposed over the electrically insulating layer and over the outer ring. The electrically conducting layer electrically is insulated from the outer ring by the electrically insulating layer.
US08766392B2 Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same
The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
US08766391B2 Photodetector array having array of discrete electron repulsive elements
Photodetector arrays, image sensors, and other apparatus are disclosed. In one aspect, an apparatus may include a surface to receive light, a plurality of photosensitive regions disposed within a substrate, and a material coupled between the surface and the plurality of photosensitive regions. The material may receive the light. At least some of the light may free electrons in the material. The apparatus may also include a plurality of discrete electron repulsive elements. The discrete electron repulsive elements may be coupled between the surface and the material. Each of the discrete electron repulsive elements may correspond to a different photosensitive region. Each of the discrete electron repulsive elements may repel electrons in the material toward a corresponding photosensitive region. Other apparatus are also disclosed, as are methods of use, methods of fabrication, and systems incorporating such apparatus.
US08766390B2 Light-receiving device, light receiver using same, and method of fabricating light-receiving device
An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.
US08766386B2 Solid-state imaging device
A solid-state imaging device includes a semiconductor substrate having a photodiode formed therein, and a lamination structure of an insulating film and a wiring. The solid-state imaging device includes a partition wall formed on a wiring layer, constituted by an inorganic material and formed in a portion corresponding to a portion provided between the adjacent photodiodes, and a color filter constituted by an organic material and formed between the adjacent partition walls. The solid-state imaging device includes an adhesion layer constituted by an organic material and formed between a side surface of the partition wall and the color filter. An adhesive property of the adhesion layer to the color filter is higher than that of the partition wall to the color filter, and an adhesive property of the adhesion layer to the partition wall is higher than an adhesive property of the color filter to the partition wall.
US08766385B2 Filtering matrix structure, associated image sensor and 3D mapping device
Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2.Application to 3D mapping and imaging.
US08766378B2 Programmable FETs using Vt-shift effect and methods of manufacture
Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k dielectric metal gate structure includes applying a current to a gate contact of the high-k dielectric metal gate structure to raise a temperature of a metal forming a gate stack. The temperature is raised beyond a Vt shift temperature threshold for providing an on-state.
US08766372B2 Copper-filled trench contact for transistor performance improvement
Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The substrate further includes a conductive surface. A dielectric layer is formed over the substrate and has an opening exposing the conductive surface. The opening extends an entire length of the semiconductor device, partway down the entire length of the device, extending from the device onto adjacent field of the device, or and a combination thereof. A barrier layer is formed within the opening. A copper containing material fills the opening to form a first contact to the semiconductor device.
US08766368B2 Semiconductor devices having double-layered metal contacts and methods of fabricating the same
Semiconductor devices are provided. The semiconductor device includes a semiconductor substrate having a cell region and a peripheral region, first and second conductive line extending onto the semiconductor substrate to constitute a peripheral circuit, a first interlayer insulation layer on the first and second conductive lines, a first peripheral interconnection pattern on the first interlayer insulation layer of the peripheral region, a first contact plug disposed in the first interlayer insulation layer, second peripheral interconnection patterns on the second interlayer insulation layer of the peripheral region, a second contact plug disposed in the second interlayer insulation layer to electrically connect the first peripheral interconnection pattern to one of the second peripheral interconnection patterns, and a third contact plug penetrating the first and second interlayer insulation layers to electrically connect the second conductive line to another one of the second peripheral interconnection patterns.
US08766366B2 Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.
US08766364B2 Fin field effect transistor layout for stress optimization
The present disclosure describes a layout for stress optimization. The layout includes a substrate, at least two fin field effect transistors (FinFET) cells formed in the substrate, a FinFET fin designed to cross the two FinFET cells, a plurality of gates formed on the substrate, and an isolation unit formed between the first FinFET cell and the second FinFET cell. The two FinFET cells include a first FinFET cell and a second FinFET cell. The FinFET fin includes a positive charge FinFET (Fin PFET) fin and a negative charge FinFET (Fin NFET) fin. The isolation unit isolates the first FinFET cell from the second FinFET cell without breaking the FinFET fin.
US08766359B2 Lateral superjunction extended drain MOS transistor
An integrated circuit containing an extended drain MOS transistor with deep semiconductor (SC) RESURF trenches in the drift region, in which each deep SC RESURF trench has a semiconductor RESURF layer at a sidewall of the trench contacting the drift region. The semiconductor RESURF layer has an opposite conductivity type from the drift region. The deep SC RESURF trenches have depth:width ratios of at least 5:1, and do not extend through a bottom surface of the drift region. A process of forming an integrated circuit with deep SC RESURF trenches in the drift region by etching undersized trenches and counterdoping the sidewall region to form the semiconductor RESURF layer. A process of forming an integrated circuit with deep SC RESURF trenches in the drift region by etching trenches and growing an epitaxial layer on the sidewall region to form the semiconductor RESURF layer.
US08766358B2 Semiconductor structure and method for manufacturing the same
A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.
US08766354B2 Semiconductor devices including vertical channel transistors and methods of manufacturing the same
A semiconductor device including a plurality of buried word lines extending in a first direction and a plurality of buried bit lines extending in a second direction. Upper surfaces of the plurality of buried word lines and the plurality of buried bit lines are lower than an upper surface of a substrate. The distance between two active regions that constitute a pair of first active regions from among a plurality of first active regions included in a first group of active regions is less than the distance between two adjacent active regions having the plurality of buried bit lines therebetween. A method of manufacturing a semiconductor device includes forming a plurality of first trenches in a substrate, forming a plurality of first conductive patterns in the plurality of first trenches in such a manner that a pair of first conductive patterns is disposed in each of the plurality of first trenches, forming a plurality of first buried patterns in the plurality of first trenches to cover the plurality of first conductive patterns, forming a plurality of second trenches by etching the substrate between the plurality of first trenches, and forming a plurality of second buried patterns in the plurality of second trenches.
US08766352B2 Semiconductor devices and method of manufacturing the same
A semiconductor device includes a pipe channel layer formed over a substrate, a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line, a second vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a source line, a multi-layer comprising a charge trap layer and formed to surround the first vertical channel layer, the second vertical channel layer, and the pipe channel layer, an insulating barrier layer formed to surround the multi-layer, a plurality of first conductive layers formed between the pipe channel layer and the bit line, wherein the first vertical channel layer passes through the first conductive layers, and a plurality of second conductive layers formed between the pipe channel layer and the source line, wherein the second vertical layer passes through the second conductive layers.
US08766351B2 Semiconductor storage device and manufacturing method of semiconductor storage device
According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided.
US08766349B2 Semiconductor device having stacked array structure, NAND flash memory array using the same and fabrication thereof
The present invention relates to a semiconductor device, a memory array and a fabrication method thereof, and more particularly to a semiconductor device having a stacked array structure (referred to as a STAR structure: a STacked ARray structure) applicable to not only a switch device but also a memory device, a NAND flash memory array using the same as a memory device and a fabrication method thereof.
US08766343B2 Integrated circuit capacitors having sidewall supports
In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.
US08766340B2 Solid-state imaging apparatus and manufacturing method thereof
A solid-state imaging apparatus and a manufacturing method of a solid-state imaging apparatus are provided. Metal wirings 102 and 103 are formed in an effective pixel region A and out-of effective pixel region B of a semiconductor substrate 100, and an etch stop layer 118 is formed over the metal wirings 102 and 103. Moreover, an insulating film 119 is formed on the etch stop layer 118, and another metal wiring 104 is formed on the insulating film 119 in the out-of effective pixel region B. Next, the insulating film 119 in the effective pixel region A is removed by using the etch stop layer 118, and interlayer lenses 105 are formed in the step in the effective pixel region A where the insulating film 119 is removed.
US08766339B2 Highly efficient CMOS technology compatible silicon photoelectric multiplier
The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells.
US08766337B2 Semiconductor device and method for manufacturing the same
A first thin film diode (100A) has a first semiconductor layer (10A) and a first light blocking layer (12A) disposed on the substrate side of the first semiconductor layer. A second thin film diode (100B) has a second semiconductor layer (10B) and a second light blocking layer (12B) disposed on the substrate side of the second semiconductor layer. An insulating film (14) is formed between the first semiconductor layer (10A) and the first light blocking layer (12A) and between the second semiconductor layer (10B) and the second light blocking layer (12B). A thickness D1 of a portion of the insulating film (14) positioned between the first semiconductor layer (10A) and the first light blocking layer (12A) is different from a thickness D2 of a portion of the insulating film (14) positioned between the second semiconductor layer (10B) and the second light blocking layer (12B). The intensity of light in a first wavelength region incident on the first semiconductor layer (10A) is higher than the intensity of light in the first wavelength region incident on the second semiconductor layer (10B). The intensity of light in a second wavelength region including a wavelength longer than the maximum wavelength of the first wavelength region incident on the second semiconductor layer (10B) is higher than the intensity of light in the second wavelength region incident on the first semiconductor layer (10A).
US08766335B2 Semiconductor device
A semiconductor device includes a MIS transistor. The MIS transistor includes an active region surrounded by an isolation region in a semiconductor substrate, a gate insulating film formed on the active region and the isolation region, and having a high dielectric constant film, and a gate electrode formed on the gate insulating film. A nitrided region is formed in at least part of a portion of the gate insulating film that is located on the isolation region. A concentration of nitrogen contained in the nitrided region is nx, and a concentration of nitrogen contained in a portion of the gate insulating film that is located on the active region is n, wherein a relationship of nx>n is satisfied.
US08766327B2 Active chemically-sensitive sensors with in-sensor current sources
Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.
US08766323B2 Organic light emitting display apparatus and method of manufacturing the same
An organic light emitting display apparatus and method of manufacturing the organic light emitting display apparatus including a lower substrate having power lines in a non-display region that is outside a display region whereon an image is realized; and a functional layer formed between the power lines and an encapsulation substrate.
US08766321B2 Self-aligned sidewall gate GaN HEMT
A method of fabricating a GaN HEMT includes growing a first epitaxial layer on a substrate, growing a second epitaxial layer on the first epitaxial layer, growing a third epitaxial layer on the second epitaxial layer, depositing a first dielectric film on the third epitaxial layer, using dielectric films to form a first sidewall dielectric spacer, forming a sidewall gate adjacent the first sidewall dielectric spacer. The sidewall gate may be made to be less than 50 nm in length.
US08766315B2 Quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, light emitting device including the same, and fabrication method thereof
Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.
US08766313B2 Mounting board and structure of the same
A mounting board including a pair of patterned electrodes, a lower surface and an upper surface opposed thereto on which a substrate of an electronic component is to be mounted, a pass-through hole penetrating through the upper surface and the lower surface, and a peripheral side surface that defines the pass-through hole. The pass-through hole includes a plurality of penetrating grooves that are cut into the mounting board and penetrate through the upper and lower surfaces. The plurality of penetrating grooves electrically split the pair of patterned electrodes. The pair of patterned electrodes is partly positioned inside the peripheral side surface, and a connection portion connecting the at least one pair of patterned electrodes and at least one pair of patterned electrodes provided on the upper surface of the substrate of the electronic component is to be disposed inside the peripheral side surface that defines the pass-through hole.
US08766311B2 Semiconductor light emitting device and light emitting apparatus
According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
US08766310B2 Semiconductor light emitting device and method for manufacturing same
According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.
US08766309B2 Omnidirectional reflector
A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
US08766305B2 Semiconductor light emitting device and method of fabricating semiconductor light emitting device
A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate and a light extraction surface. The first electrode layer is provided on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, first conductive type semiconductor layer, and second conductive type semiconductor layer, and has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
US08766303B2 Light-emitting diode with a mirror protection layer
A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
US08766299B2 Electro-optical device and electronic apparatus comprising electro-optical device having color filter and sealing film
An electro-optic device includes a light-emitting element disposed above a substrate, an optically transparent sealing film covering the light-emitting element, and a color filter disposed on the sealing film so as to adjoin the sealing film. The sealing film includes a thin portion overlapping at least part of the light-emitting element, and a thick portion surrounding the thin portion. The thin portion and the thick portion form a recess in the sealing film. The color filter fills the recess.
US08766298B2 Encapsulant profile for light emitting diodes
A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.
US08766296B2 Highly efficient gallium nitride based light emitting diodes via surface roughening
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
US08766293B2 Light-emitting device and method for manufacturing the same
A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
US08766290B2 Mask assembly and organic light emitting diode display manufactured using the same
A mask assembly includes a frame forming an opening, and a plurality of unit masks which form a plurality of deposition openings, the longitudinal ends of the unit masks being fixed to the frame. At least two adjacent ones of the plurality of unit masks have deposition recesses formed on both sides facing each other. The width of the deposition recesses along a width direction of the unit masks is equal to or greater than the width of the deposition openings along the width direction of the unit masks.
US08766286B2 Organic opto-electric device and a method for manufacturing an organic opto-electric device
An organic opto-electric device has a layer stack with a base electrode, an organic layer assembly, a cover electrode and a contact layer. The organic layer assembly is arranged between the base electrode and the cover electrode and the cover electrode is arranged between the organic layer assembly and the contact layer. The cover electrode and the base electrode are structured to form several laterally adjacent optically active areas and the base electrode, the organic layer assembly, the cover electrode and the contact layer are interconnected by vias such that at least two optically active areas are connected in series so that a current flow through the at least two optically active areas passes in a direction between the base electrode and a cover electrode. The current flow between the at least two optically active areas passes through the contact layer, wherein the contact layer contacts the base electrode above one of the vias laterally in the interior of the two optically active areas.
US08766284B1 Stackable optoelectronics chip-to-chip interconnects and method of manufacturing
The optoelectronics chip-to-chip interconnect system includes at least one packaged chip connected on the printed-circuit-hoard (PCB) with at least one other packaged chip, opticalelectrical (O-E) conversion means, and waveguide-board. Single to multiple chips can be interconnected using this technique. Packaged chip includes semiconductor die and package based on ball-grid array or chipscale-package. O-E board includes optoelectronics and multiple electrical contacts on both board sides. Waveguide board includes electrodes transferring signals from O-E board to PCB, and the flex optical waveguide, stackable onto the PCB, to guide optical signals chip-to-chip. Electrodes can be connected to the PCB instead of on waveguide hoard. The chip-to-chip interconnection system is pin-free, compatible with the PCB. Advantages are to use the packaged chip for interconnection, while conventional PCB can be used for low speed signal connection, and transmitting part of the heat from the packaged chip to the PCB through conductors, avoiding complex cooling systems.
US08766283B2 Light-emitting diode arrangement with heat dissipating plate
The invention relates to a light-emitting arrangement, having:—at least one light-emitting diode chip (1),—a multi-layer board (17) having a base (5) of a thermally well conducting material, in particular of metal, and—an electrical insulating and thermally conducting connection layer (2) between the emission surface of the light-diode chip (1) and the board (17).
US08766280B2 Protective substrate for a device that collects or emits radiation
This substrate (11) for a device (50) that collects or emits radiation comprises a transparent polymer layer (1) and a barrier layer (2) on at least one face (1A) of the polymer layer. The barrier layer (2) consists of an antireflection multilayer of at least two thin transparent layers (21, 22, 23, 24) having both alternately lower and higher refractive indices and alternately lower and higher densities, wherein each thin layer (21, 22, 23, 24) of the constituent multilayer of the barrier layer (2) is an oxide, nitride or oxynitride layer.
US08766277B2 Semiconductor device and manufacturing method of the same
The leakage current generated in a pn junction region between a gate and a source is reduced in a junction FET using a silicon carbide substrate. In a trench junction FET using a silicon carbide substrate, nitrogen is introduced into a sidewall and a bottom surface of a trench, thereby forming an n type layer and an n+ type layer on a surface of the trench. In this manner, the pn junction region corresponding to the junction region between a p+ type gate region and an n+ type source region is exposed on a main surface of a semiconductor substrate instead of on the damaged sidewall of the trench, and also the exposed region thereof is narrowed. Accordingly, the leakage current in the pn junction region can be reduced.
US08766276B2 Semiconductor device and method of manufacturing semiconductor device
A nitride semiconductor layer formed from a nitride semiconductor is provided on at least one surface side of a semiconductor substrate. Impurity regions (a source region, a drain region, and the like) are provided on one surface side in the nitride semiconductor layer and contain an impurity of a first conductivity type. In addition, amorphous regions (a first amorphous region and a second amorphous region) are a part of the impurity regions and are located in a surface layer of the impurity regions. In addition, metallic layers (a source electrode and a drain electrode) come into contact with the amorphous regions (the first amorphous region and the second amorphous region).
US08766269B2 Light-emitting device, lighting device, and electronic device
It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.
US08766267B2 Pixel structure
A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.
US08766264B2 Thin film transistor with concave region in the gate insulating layer thereof
An embodiment of the disclosed technology provides a thin film transistor device comprising a source electrode, a drain electrode, a gate electrode, an active layer corresponding to the gate electrode, and a gate insulation layer formed between the gate electrode and the active layer; a concave region corresponding to the gate electrode is provided in the gate insulation layer.
US08766257B2 Test pad structure for reuse of interconnect level masks
A test pad structure in a back-end-of-line metal interconnect structure is formed by repeated use of the same mask set, which includes a first line level mask, a first via level mask, a second line level mask, and a second via level mask. The test pad structure includes a two-dimensional array of test pads such that a first row is connected to a device macro structure in the same level, and test pads in another row are electrically connected to another device macro structure of the same design at an underlying level. The lateral shifting of electrical connection among pads located at different levels is enabled by lateral extension portions that protrude from pads and via structures that contact the lateral extension portions. This test pad structure includes more levels of testable metal interconnect structure than the number of used lithographic masks.
US08766255B2 Oxide semiconductor device including gate trench and isolation trench
A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.
US08766251B2 Functional material for printed electronic components
The invention relates to a printable precursor comprising an organometallic aluminum, gallium, neodymium, ruthenium, magnesium, hafnium, zirconium, indium and/or tin complex or a mixture thereof which contains at least one ligand from the class of the oximates, for electronic components, and to a preparation process. The invention furthermore relates to corresponding printed electronic components, preferably field-effect transistors.
US08766249B2 Nitrogenated aromatic compound, organic semiconductor material, and organic electronic device
Provided are a novel nitrogen-containing aromatic heterocyclic compound and an organic electronic device using the compound. This nitrogen-containing aromatic compound is represented by the general formula (1). Further, the present invention relates to organic electronic devices such as a light-emitting device, a thin-film transistor, and a photovoltaic device each using the nitrogen-containing aromatic compound. (L represents an m+n-valent aromatic hydrocarbon group or aromatic heterocyclic group, or a group arising from a triarylamine or a diaryl sulfone; X represents N-A, O, S, or Se; A represents an alkyl group or the like; R represent hydrogen, an alkyl group, an aromatic group, or the like; and m+n is an integer of 2 to 4.)
US08766244B2 Pixel control structure, array, backplane, display, and method of manufacturing
Pixel control structure for use in a backplane for an electronic display, including a transistor that has a gate, a source, a drain, and an organic semiconductor element. The pixel control structure is formed by a first patterned conductive layer portion, a second patterned conductive layer portion, a dielectric layer portion, and an organic patterned semiconductive layer portion. The dielectric layer portion comprises an overlap region defined by overlap of the second conductive layer portion over the first conductive layer portion. The overlap region defines an overlap boundary, defined by an edge portion of the first patterned conductive layer portion and an edge portion of the second patterned conductive layer portion. The patterned semiconductive layer portion extends over the overlap region and away from the overlap region so as to extend from both first and second edge portions.
US08766240B2 Permeation barrier for encapsulation of devices and substrates
A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second Etch Rate is greater than the first Etch Rate by a factor greater than 1.2 and the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from a single precursor material.
US08766239B2 Buffer bilayers for electronic devices
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.
US08766238B2 Polymeric anions/cations
The present invention relates to light-emitting devices and in particular organic light-emitting devices (OLEDs). In particular, the invention relates to emitter materials in which charged metal complexes are bonded to a polymer by electrostatic interactions.
US08766237B2 Homo-material heterophased quantum well
A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.
US08766235B2 Bipolar junction transistors and memory arrays
Some embodiments include methods of forming BJTs. A first type doped region is formed within semiconductor material. First and second trenches are formed within the semiconductor material to pattern an array of pedestals, and the trenches are filled with electrically insulative material. An upper portion of the first type doped region is counter-doped to form a first stack having a second type doped region over a first type doped region, and an upper portion of the first stack is then counter-doped to form a second stack having a second type doped region between a pair of first type doped regions. Some embodiments include a BJT array. A base implant region is between a pair of emitter/collector implant regions. Electrically insulative material is adjacent the base implant region, and contains at least about 7×1016 atoms/cm3 of base implant region dopant.
US08766234B1 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a high leakage dielectric layer sandwiched between two lower leakage dielectric layers. The low leakage layers can function to restrict the current flow across the selector device at low voltages. The high leakage dielectric layer can function to enhance the current flow across the selector device at high voltages.
US08766231B2 Nanoscale electronic device with barrier layers
On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.
US08766229B2 Electronic memory device
An electronic device includes a first electrode, a second electrode, and a solid electrolyte made of an ion-conducting material, the first and second electrodes being configured to form a metal dendrite. The device further includes a third electrode, an interface layer contacting the third electrode and a third surface of the electrolyte, the interface layer being an ionic insulator and an electronic insulator. The third electrode and the dendrite are arranged such that the device has two resistive states.
US08766227B1 Pinched center resistive change memory cell
A vertically oriented memory element having a narrower area near its center away from its ends is formed. Current density and heating are higher away from the ends of the memory element, thus increasing its lifetime.
US08766225B2 Storage device
According to the embodiment, a storage device includes row lines arranged parallel to one another, column lines arranged parallel to one another to intersect with the row lines, and a memory cell disposed at each of intersections of the row lines and the column lines and including a resistance-change element and a diode connected in series to the resistance-change element. The diode includes a stack of a first semiconductor region containing an impurity of a first conductivity type, a second semiconductor region containing an impurity of the first conductivity type lower in concentration than in the first semiconductor region, and a third semiconductor region containing an impurity of a second conductivity type. An impurity concentration in the second semiconductor region of the diode in a first adjacent portion adjacent to the first semiconductor region is higher than that in a second adjacent portion adjacent to the third semiconductor region.
US08766219B2 Particle beam microscope for generating material data
A method of operating a particle beam microscopy. A particle beam is scanned across a scanning region of a surface of the object. Particles are detected by a detector system for a plurality of impingement locations of the primary beam within the scanning region. A detector system generates detector signals which represent for each of the impingement locations an intensity of the detected particles. Material data of the interaction regions are calculated depending on the detector signals and depending on topography data, which represent a topography of the object surface in the scanning region.
US08766217B2 Multi-field charged particle cancer therapy method and apparatus
The invention comprises a multi-field charged particle irradiation method and apparatus. Radiation is delivered through an entry point into the tumor and Bragg peak energy is targeted to a distal or far side of the tumor from an ingress point. Delivering Bragg peak energy to the distal side of the tumor from the ingress point is repeated from multiple rotational directions. Preferably, beam intensity is proportional to radiation dose delivery efficiency. Preferably, the charged particle therapy is timed to patient respiration via control of charged particle beam injection, acceleration, extraction, and/or targeting methods and apparatus. Optionally, multi-axis control of the charged particle beam is used simultaneously with the multi-field irradiation. Combined, the system allows multi-field and multi-axis charged particle irradiation of tumors yielding precise and accurate irradiation dosages to a tumor with distribution of harmful irradiation energy about the tumor.
US08766212B2 Correction of spatial instability of an EUV source by laser beam steering
A method to align a discharge axis of a discharge radiation source with respect to optics of the lithographic apparatus includes creating a discharge in a substance in a discharge space between an anode and a cathode to form a plasma so as to generate electromagnetic radiation. The discharge is triggered by irradiating an area on a surface proximate the discharge space with an energetic beam. The position of the area is controlled in response to a property of the radiation in the lithographic apparatus and/or the temperature of a collector of the lithographic apparatus. Controlling the position of the area which is irradiated improves alignment of the discharge axis with the different lithographic modules, such as the contamination barrier, the illumination system, the substrate table and/or the projection system.
US08766194B2 Integrating sensing systems into thermostat housing in manners facilitating compact and visually pleasing physical characteristics thereof
An occupancy sensing electronic thermostat is described that includes a thermostat body, an electronic display that is viewable by a user in front of the thermostat, a passive infrared sensor for measuring infrared energy and an infrared energy directing element formed integrally with a front surface of the thermostat body. The passive infrared sensor may be positioned behind the infrared energy directing element such that infrared energy is directed thereonto by the infrared energy directing element. The thermostat may also include a temperature sensor and a microprocessor programmed to detect occupancy based on measurements from the passive infrared sensor.
US08766190B2 Pixel, pixel array, image sensor including the same, method for operating the image sensor
Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for operating the image sensor. Charges are eliminated from a first photoelectric conversion region of a photoelectric conversion section, and accumulated into the first photoelectric conversion region. Information about quantity of the charges of the first photoelectric conversion region is output, and charges are removed from a second photoelectric conversion region of the photoelectric conversion section. Accumulation of charges into the second photoelectric conversion region is started, and then information about quantity of the charges accumulated in the second photoelectric conversion region is output.Lights having wavelength bands different from each other are independently detected according to disclosed invention.
US08766188B2 Photoconductive element
A photoconductive element for performing at least one of generation and detection of terahertz radiation includes a photoconductive layer formed of a semiconductor material and configured to generate photoexcited carriers by being irradiated with excitation light, and a plurality of electrodes provided on the photoconductive layer. The material of the photoconductive layer is a material that makes a depletion layer produced in the photoconductive layer have a thickness smaller than an optical absorption length of the photoconductive layer for a wavelength of the excitation light. A film thickness of the photoconductive layer is adjusted so that the depletion layer is formed over an entirety in a direction of the film thickness within at least a portion of the photoconductive layer between the plurality of electrodes.
US08766186B2 Control aperture for an IR sensor
A control aperture for an IR sensor includes a die; an IR sensor disposed on the die and an IR opaque aperture layer on the die having an IR transmissive aperture aligned with the IR sensor for controlling the field of view and focus of the IR sensor.
US08766185B2 Charged particle beam device
The charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.
US08766180B2 High performance computing for three dimensional proton computed tomography (HPC-PCT)
A proton computed tomography (pCT) detector system, including two tracking detectors in sequence on a first side of an object to be imaged, two tracking detectors in sequence on an opposite side of the object to be imaged, a calorimeter, and a computer cluster, wherein the tracking detectors include plastic scintillation fibers. All fibers in the detector system are read out by Silicon Photomultipliers (SiPM). A method of imaging an object by emitting protons from a source through two tracking detectors, through and around the object, and through two opposite tracking detectors, detecting energy of the protons with a calorimeter, and imaging the object.
US08766166B2 Switch with multiple trigger function
The present invention relates to a switch with multiple trigger function, which comprises: a touch switch having a button thereon; a first sensor having a sensing zone; and a microcontroller coupled to the touch switch and the first sensor; when the button is pressed by an object, the touch switch is conducted, and the microcontroller executes actions corresponding to the touch switch, thereby driving a controlled device; or when the object enters the sensing zone, the first sensor senses the signal change, and the microcontroller enables the touch switch to be conducted according to the signal change, or generates a signal the same as the signal for conducting the touch switch for executing corresponding actions, thereby driving a controlled device.
US08766165B1 Pattern-based optical lens testing apparatus having a module comparing a viewed image representation to a copy of target pattern and method for using the same
A pattern method is provided for testing an optical lens. The method provides a lens for test, including a first lens surface with a focal plane in object space and a second lens surface with a focal plane in image space. Also provided is a pattern test fixture including an imaging device and a target pattern. The lens is positioned so that the imaging device is located outside the object space focal plane and the target pattern located is outside the image space focal plane. The imaging device, such as a microscope, magnification device, human eye, or camera, is used to view the target pattern. A viewed image representation of the target pattern is received in the imaging device and compared to the target pattern. More typically, the viewed image representation is compared to a target pattern copy.
US08766163B2 Control circuit and operation method for projector
A control circuit is applied into a projector and an operation method is provided for the projector. The projector includes a photo sensor provided for generating a sensing voltage according to light intensity sensed by the photo sensor. The control circuit includes a first voltage-comparing unit, a reference voltage generating unit and a second voltage-comparing unit. The first voltage-comparing unit is provided for comparing the sensing voltage and a first reference voltage, to generate a first comprising result. The reference-voltage generating unit is provided for generating a second reference voltage and determining whether adjusting the second reference voltage according to the first comparing result. The second reference voltage is relatively larger than the first reference voltage. The second voltage-comparing unit is provided for comparing the sensing voltage and the second reference voltage, to generate a second comparing result.
US08766162B2 Ambient light based gesture detection
A gesture sensing device includes one or more sensors and a processor for processing sensed voltages output from the sensors based on ambient light and/or reflected light received by the sensors. The processor determines an ambient light level and/or a distance between the target and the sensors such that, if the ambient light level exceeds an ambient light threshold and/or the distance is less than a distance threshold, the processor determines the motion of a target relative to the sensors based on the ambient light instead of the reflected light.
US08766161B2 System for controling and calibrating single photon detection devices
A single photon detection system and method are disclosed which have a control block for helping to monitor and optimize performance, especially at high detection rates. The system is based on photon detectors constructed with avalanche photodiodes (APD) gated in time to operate in the Geiger mode. An electrical reference frequency is generated which is subtracted from the APD output in order to better isolate the breakdown event. The resulting signal is sampled and analyzed to allow the control unit to optimize the magnitude and phase of the electrical reference frequency. The control unit may also change the gate pulse shape and phase, including by the use of a digital-to-analog converter. The gate pulse can be shifted off an input optical pulse so as to estimate dark count rate, or shifted to measure a reference input signal to estimate detection efficiency.
US08766156B2 Solid-state imaging device and method of manufacturing the same, and imaging apparatus
A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
US08766154B2 Opto-electronic measuring arrangement with electro-optical basic coupling
An opto-electronic measuring arrangement being independent from extraneous light includes a transmission light source and a compensation light source which sequentially emit light on a clocked phase basis. The emitted light is respectively phase-shifted. The light sources can be controlled such that the clock-synchronous signal difference between different phases becomes zero. A basic coupling light source transmits light directly to the optical receiver without the light being influenced by the measuring object. The basic coupling control current is so that a desired sensitivity of the measuring arrangement is achieved and/or a desired operating point can be set. The controllable current source for generating a clocked transmission control current and the controllable basic coupling current source for generating a clocked basic coupling control current are phase-synchronously clocked. The controllable compensation current source for generating a clocked compensation control current is clocked with the inverted clock signal of the clock generator.
US08766153B2 Vision measuring device and auto-focusing control method
A vision measuring device includes: a camera which images a workpiece and transfers image information of the workpiece; a position control unit which controls an in-focus position of the camera and outputs the in-focus position as position information representing a position in a Z-axis direction; and a vision measuring machine which performs vision measurement on the workpiece based on image information and position information. The position control unit acquires and retains position information in response to a trigger signal output from the camera or the position control unit to the other at a certain timing of an imaging period during which the camera images the workpiece. The vision measuring machine calculates position information representing a position of image information in the Z-axis direction based on image information transferred from the camera and position information output from the position control unit, and performs auto-focusing control.
US08766151B1 Cooking time independent front-facing turntable parking return for microwave oven
A microwave oven which accepts user-placement of a cook item on a turntable accessed through a usually front-facing door. The turntable is rotated during a preset cook-time. The turntable returns to the original user-placement situation near the door and concurrently stops at the end of the cook-time. This results in a simultaneous end of turntable rotation and an end of cooking, enabling the cook-item to be conveniently reparked adjacent with the access door thereby enabling safe and convenient removal immediately upon completion of the cook-time. The cook-time and the turntable operational and reparking parameters are factored to enable a maximum extent of turntable rotation during the cook time and still assure the return to the original starting location concurrent with cook-time completion.
US08766149B2 Device for magnetic heat induction and exchange to mobile streams of matter
A device is described for magnetic heat induction and subsequent heat exchange to mobile streams of matter. The device can provide efficient heating of moving gaseous, liquid, or solid masses. A cold mass is made to flow past an induction heated workpiece, whereby the cold mass becomes heated via thermal transfer from the workpiece to the cold mass. The device can include a material susceptible to heating by magnetic induction that is inserted into a tube or other containment structure. The tube can be the transport conduit for the material to be heated. An induction coil can surround the tube. The coil can be connected to a high energy LC (inductance-capacitance) resonance circuit. Resonance generates magnetic flux in the coil. The flux can interact with the workpiece inside the tube. Heat can be generated in the workpiece and can then be transmitted to the cold mass as it is conveyed past the workpiece.
US08766139B2 Engine-driven air compressor load control system and method
A system, in one embodiment, includes an engine, a generator coupled to the engine, a compressor coupled to the engine, and a controller configured to soft start the compressor. A method, in another embodiment, includes soft starting an air compressor in a portable welding unit having the air compressor, an engine coupled to the air compressor, and a welding generator coupled to the engine.
US08766134B2 Alignment features for a plasma torch connector assembly
A connector assembly for coupling a plasma torch to a receptacle including a connector body configured to receive a mating connector body. The connector body is attachable to a power supply or a plasma arc torch. One or more circumferentially shaped blades extend axially from a surface of the connector body and form a blade ring. One or more gaps can be disposed relative to the surface of the connector body. The plurality of gaps are defined by and between the circumferentially shaped blades. A distance of the gaps between the circumferentially shaped blades extends along a portion of the circumference of the blade ring. The plurality of gaps can be asymmetrically distributed about the blade ring to facilitate proper rotational alignment, and are shaped to align with corresponding circumferentially shaped blades of the mating connector body.
US08766133B2 Process for high-energy density beam welding
A high-energy density beam welding process for two panels includes a step that include placing a metal band on the upper face of at least one panel, in the axis of the desired welded joint before welding the panels, so that the metal band is inserted between the panels and the high-energy density beam during the welding step, and so that the thickness of this metal band integrates all of the geometric faults present on the surface of the welded joint.
US08766129B2 Method for separating minerals with the aid of X-ray luminescence
The method relates to the field of mineral enrichment. It involves setting a threshold value for the intensity of a luminescence signal after a given time following the end of a pulse of exciting radiation, measuring, in the course of registering the intensity of the luminescence signal of a mineral, the intensity of the luminescence signal after a given time following each pulse of exciting radiation, recording the intensity value obtained for each luminescence signal if the signal registered exceeds the set threshold value, comparing the value measured in the current period with the values obtained in the preceding periods, determining the period in which the intensity value was at its peak, and processing the luminescence signal in which the value of the measured intensity was at its peak in order to determine the separation parameters; a decision to separate the mineral to be enriched is taken in the event that the separation parameters are inside the range of given values.
US08766122B2 Push type switch
A push type switch which enables an operator to obtain an upscale impression when he operates the push type switch. A switch body 3 is rigidly fixed to a printed wiring board 5. A casing 7 having a plurality of guide grooves 71h is fixed to the printed wiring board 5. A plurality of rails 91a provided on a knob 9 capable of transmitting a pushing force to the switch body 3 are slidably inserted into the guide grooves 71h such that the knob 9 can slide on the casing 7. A grease is applied to the guide grooves 71h and the rails 91a. The viscosity of the grease is set to be within a range of 1000 to 2750 Pa.
US08766121B2 Rotary control switch
A rotary on/off control switch (100, 700, 900) provides improved torque with single click operation. Rotary on/off control switch (100) is formed of a casing (106), a drive member (108), and a carrier member (110) having frictional elements (112) coupled thereto. A lever (116) and drive member (108) provide rotation of the carrier within the casing. In response to rotation of the drive member (108), carrier member (110) and lever (116), each frictional element (112) travels against the casing generating torque for single click ON operation. Rotation past a predetermined angle causes the carrier member (110) to remain stationary for variable function control of the rotary on/off control switch (100). Reverse rotation of the drive member (108), carrier member (110) and lever (116), generates torque for single click OFF operation.
US08766120B2 Microswitch
Provided is a microswitch wherein the versatility of a lever member can be prevented from being reduced while the rigidity of the lever member is improved. The microswitch is provided with a housing containing a switch mechanism, a plunger which transmits power to the switch mechanism, and a lever member, the base end of which is supported by the housing. In the microswitch, the tip end of the plunger abuts with the bottom surface of the lever member at an intermediate position in the longitudinal direction of the lever member, and an object to be detected can abut with the top surface of the lever member on the tip end side of the lever member. Further, a first reinforcement portion is formed on the top surface of the lever member, excluding an object abutment portion with which the object to be detected is to be abutted, and a second reinforcement portion is formed on the bottom surface of the lever member, excluding a plunger abutment portion.
US08766116B2 Rotary encoder suitable for a use with a gas valve on a range
A valve stem position sensor for a gas range provides a slotted housing, wiper assembly, and printed circuit board that may be aligned to allow the sensor to be installed on the valve stem from the side of the valve stem rather than over the end of the valve stem permitting the valves to be partially installed in the gas range with the valve stems extending through the console for mechanical support during the remainder of the assembly process.
US08766114B2 Keypad apparatus for portable communication device
Provided is a keypad apparatus for a portable communication device structured to have a Printed Circuit Board (PCB) including a plurality of dome switches and a plurality of Light-Emitting Diodes (LEDs). The keypad apparatus includes a waveguide sheet portion provided on the dome switches, a plurality of printed surfaces which are printed on a top surface of the waveguide sheet portion and adjust a brightness of light from the LEDs, in a stepwise manner from a position distant from the LEDs to a position adjacent to the LEDs, and a keypad provided on the printed surfaces.
US08766113B2 Sensor mechanism body comprising two roberval mechanisms and electronic balance using the same
A sensor mechanism body having a main Roberval mechanism; a sub-Roberval mechanism provided with a second fixed column connected with an electronic balance base, a second movable column supporting the load of an internal weight placed on an engaging section, and two second beams, parallel to each other, and connecting the second movable column to the second fixed column. A first lever rockably supported by a first fulcrum, connected to one end of a first movable column of the main Roberval mechanism, and the other end connected to a second lever. The second lever rockably supported by a second fulcrum, connected to one end of a second movable column of the sub-Roberval mechanism, and the other end connected to an electromagnetic force generating device and the other end of the first lever. The second fixed column is connected to the second lever through a thin-walled connecting.
US08766105B2 Conductive sheet, method for using conductive sheet, and capacitive touch panel
A conductive Sheet, a method for using conductive sheet, and a capacitive touch panel are provided. A first conductive sheet contains two or more conductive first sense pads and a first connection for electrically connecting the adjacent first sense pads on a first transparent substrate. The first sense pads each contain a combination of two or more small lattices, the first connection contains one or more medium lattices (a first medium lattice to a fourth medium lattice), and the pitch of the medium lattices is n times larger than that of the small lattices (in which n is a real number larger than 1).
US08766103B2 Electronic component
An electronic component includes: a multilayer ceramic substrate that has a penetration electrode formed therein, and has a passive element provided on the upper face thereof; an insulating film that is provided on the multilayer ceramic substrate, and has an opening above the penetration electrode; a first connecting terminal that is provided on the insulating film so as to cover the opening, and is electrically connected to the penetration electrode; and a second connecting terminal that is provided on a region of the insulating film other than the opening region.
US08766098B2 Folding high voltage insulating column
A device for measuring current and/or voltage in a high voltage wire can be provided in a folding insulator. The mechanically folding insulator device can include a plurality of insulated sections. Pairs of insulated sections are coupled together by a link which allows for mechanical folding of said insulator device. The insulated sections of the folding insulator device have a cavity formed therein which contains an optical fiber surrounded by an insulative material.
US08766092B2 Energy collection systems and methods
An energy collection system is provided. The system can include an energy collection device and an energy concentration device disposed proximate at least a portion of the energy collection device. The energy concentration device includes a non-periodic, sub-wavelength, dielectric grating.
US08766089B2 Semiconductor substrate, electrode forming method, and solar cell fabricating method
A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.
US08766079B2 Playback apparatus, playback method, and playback program
A playback apparatus includes: a storage unit storing music data and group identification information for identifying groups in which the music data are arranged in a predetermined unit; a selection unit selecting the group identification information stored in the storage unit; a notification unit notifying the group identification information selected by the selection unit with a sound; and a playback unit playing back the notification of the group identification information in the notification unit and the music data belonging to the group identified by the group identification information selected by the selection unit.
US08766078B2 Music piece order determination device, music piece order determination method, and music piece order determination program
A music piece order determination device includes a beat information corrector, a correlation value calculator, and a music piece order determiner. The beat information corrector acquires beat position information and a tempo value in a musical composition, and corrects the beat position information such that the tempo value becomes the same value as a reference value. The correlation value calculator calculates a correlation value indicative of a degree of correlation of beat position information between respective musical compositions among a plurality of musical compositions, based on the beat position information. The music piece order determiner determines a music piece order, which is a reproduction order of musical compositions, based on the correlation value between the respective musical compositions.
US08766077B2 Music playing movement display control device, music playing movement control method and computer readable medium
A music playing movement display control device 1 includes CPU 11 that creates a time list including respective times and a time in advance of the respective times during a musical performance, based on music playing information. The CPU 11 draws on the display unit 16 a movement image of a finger showing a pressed key position on a keyboard at the respective times and a movement image of a finger showing a pressed key position on a keyboard at the times in advance to the respective times for each of the respective times during a musical performance, based on music playing information, movement information, keyboard data, structure data, and a time list.
US08766074B1 Stand for musical drum
A musical drum support stand which supports a musical drum and suspends it off the ground or floor surface. The support stand includes a base section that defines an opening and a first member typically ring-shaped and a spaced-apart second member also typically ring-shaped situated below the first member. A plurality of spaced-apart brace support members are provided to join the first member to the second member with each of the brace support members being alternatively curved in concave-convex relation and adapted for detachably receiving and securely gripping the drum shell's base section and holding it in suspension off the ground.
US08766070B2 Device for attachment of lever to tremolo bridge and kit
The present disclosure is a new solution for attachment of lever to the tremolo bridge made by a device that can be sold as a kit. Such device for attachment of lever to the tremolo bridge is made of a cylindrical device (1), of straight base, which has inside it a central channel along its entire vertical axis, and which has teeth (2) through which the lever (3) is attached to the device (1); one solid conical device (4) that has inside it a central channel along its entire vertical axis, and which allows to fit the cylindrical device (1) to the tremolo bridge (5); one or more rings (6) that make the junction between the cylindrical device (1) and the conical device (4); one metal pin (7) with external screw thread and head that crosses the—cylindrical device (1), the conical device (4) and the ring(s) (6) in order to attach them to the tremolo bridge (5); and a system (8) that together with the pin (7) will fix such set of parts to the tremolo bridge (5).
US08766068B2 Interchangeable tuners for a tailpiece of a musical instrument
In general, the present invention provides a tailpiece for a musical instrument. Among other things, the tailpiece includes a plurality of openings for receiving a plurality of strings and a detachable tuner positioned within one or more of the plurality of openings. Among other features, the tailpiece includes a set of detachable keyhole inserts positioned within one or more of the openings of the tailpiece unoccupied by a detachable tuner. Each detachable tuner is interchangeable with one of the detachable keyhole string inserts, thus allowing players to use tuners with any string desired for complete customization based on each player's preference.
US08766063B1 Wheat variety W000582Z2
A wheat variety designated W000582Z2, the plants and seeds of wheat variety W000582Z2, methods for producing a wheat plant produced by crossing the variety W000582Z2 with another wheat plant, and hybrid wheat seeds and plants produced by crossing the variety W000582Z2 with another wheat line or plant, and the creation of variants by mutagenesis or transformation of variety W000582Z2. This invention also relates to methods for producing other wheat varieties or breeding lines derived from wheat variety W000582Z2 and to wheat varieties or breeding lines produced by those methods.
US08766060B1 Maize hybrid X08C963
A novel maize variety designated X08C963 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X08C963 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X08C963 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X08C963, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X08C963. This invention further relates to methods for producing maize varieties derived from maize variety X08C963.
US08766058B1 Maize hybrid X13C761
A novel maize variety designated X13C761 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X13C761 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X13C761 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X13C761, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X13C761. This invention further relates to methods for producing maize varieties derived from maize variety X13C761.
US08766056B1 Maize variety hybrid X13B663
A novel maize variety designated X13B663 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X13B663 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X13B663 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X13B663, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X13B663. This invention further relates to methods for producing maize varieties derived from maize variety X13B663.
US08766055B1 Maize variety hybrid X18B751
A novel maize variety designated X18B751 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X18B751 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X18B751 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X18B751, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X18B751. This invention further relates to methods for producing maize varieties derived from maize variety X18B751.
US08766049B2 Soybean variety A1036413
The invention relates to the soybean variety designated A1036413. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1036413. Also provided by the invention are tissue cultures of the soybean variety A1036413 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1036413 with itself or another soybean variety and plants produced by such methods.
US08766042B2 Soybean variety D6652412
The invention relates to the soybean variety designated D6652412. Provided by the invention are the seeds, plants and derivatives of the soybean variety D6652412. Also provided by the invention are tissue cultures of the soybean variety D6652412 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety D6652412 with itself or another soybean variety and plants produced by such methods.
US08766036B1 Hybrid corn variety 1669417
The invention provides seed and plants of the hybrid corn variety designated 1669417. The invention thus relates to the plants, seeds and tissue cultures of the variety 1669417, and to methods for producing a corn plant produced by crossing a corn plant of variety 1669417 with itself or with another corn plant, such as a plant of another variety. The invention further relates to genetic complements of plants of variety 1669417.
US08766031B2 Comfortable diaper
An absorbent article, preferably a disposable absorbent article such as a diaper, is disclosed that provides an improved immobilization of absorbent polymer material when the article is fully or partially urine loaded. This absorbent core is useful for providing an absorbent article of increased wearing comfort. Specifically disclosed is an absorbent core useful for an absorbent article comprising a substrate layer and absorbent material, the absorbent material comprising an absorbent polymer material, the absorbent material optionally comprising absorbent fibrous material, the absorbent fibrous material not representing more than 20% of the weight of absorbent polymer material, wherein the absorbent material is immobilized when wet such that the absorbent core achieves a wet immobilization of more than 50%, preferably of more than 60%, 70%, 80% or 90% according to the Wet Immobilization Test described herein.
US08766029B2 Process for providing a vaporous purified crude C4 cut as a feed steam for an extractive distillation with a selective solvent
Mixtures of hydrocarbons predominantly having 4 carbon atoms per molecule known as C4 cuts are used in obtaining crude 1,3-butadiene by a thermal cracking process. Vaporous purified crude C4 cuts are produced from liquid crude C4 cuts, containing butanes, butenes, 1,3-butadiene, C3 hydrocarbons, C4 oligomers and polymers, and C5+ hydrocarbons via an extractive distillation by fist removing the C4 oligomers and polymers and the C5+ hydrocarbons and then vaporizing the liquid crude C4 cut in a vaporizer vessel. The vaporizer vessel is directly or indirectly in contact with a stripping column where liquid C4 cuts are supplied to the upper region, direct gas and liquid exchange with the vaporizer vessel occurs in the lower region, and vaporous purified crude C4 cuts are removed from the top region.
US08766028B2 Separating styrene from C6-C8 aromatic hydrocarbons
The invention disclosed relates to a process for refining a hydrocarbon feed to make substantially styrene-free C6-C8 aromatic hydrocarbons (BTX). The hydrocarbon feed, for example, unhydrotreated pyrolysis gasoline, is distilled to make a BTX rich stream containing styrene which is fractionated to separate C6 and C7 hydrocarbons from C8 hydrocarbons including styrene. Styrene in the C8 hydrocarbons reacts in the presence of a selective etherification catalyst with a C1-C3 lower alkyl alcohol to form the corresponding styrene ether, which is then separated by distillation into a styrene ether stream and a C8 hydrocarbons rich stream. The C8 hydrocarbons rich stream is then re-mixed with the C6 and C7 hydrocarbons, and sent to hydrogenation reactors to remove sulphur and olefinic hydrocarbons to form substantially styrene-free BTX.
US08766021B2 Process for producing 2,3,3,3-tetrafluoropropene
In the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf), formation of HFC-254eb as an excessively reduced product is suppressed.A process for producing 2,3,3,3-tetrafluoropropene, which comprises reacting a raw material compound gas composed of at least one of 1,1-dichloro-2,3,3,3-tetrafluoropropene and 1-chloro-2,3,3,3-tetrafluoropropene, and hydrogen gas, in the presence of a catalyst, wherein the catalyst is a catalyst having palladium supported on active carbon, and the ratio of the number of moles of the hydrogen gas to the number of moles of chlorine atoms in the raw material compound gas (H2/Cl) is at most 0.7.
US08766017B2 Integrated process for the preparation of 1,4-cyclohexanedimethanol from terephthalic acid
Disclosed is an integrated process for the preparation of 1,4-cyclohexanedimethanol from terephthalic acid. Terephthalic acid is esterified with (4-methylcyclohexyl)methanol and the terephthalate ester hydrogenated to 1,4-cyclohexanedimethanol in a 2-stage process. The (4-methylcyclohexyl)methanol that is formed during the hydrogenation step is recycled to the esterification reaction. Also disclosed is a method for purifying and recovering the 1,4-cyclohexanedimethanol product.
US08766016B2 Green and atom-economical processes for producing phenolic antioxidants
Processes for producing 1,3,5-trimethyl-2,4,6-tris(3,5-dialkyl-4-hydroxybenzyl)benzene are provided, in particular such processes that utilize 2,6-di-tert-butylphenol, paraformaldehyde, a secondary amine, mesitylene, and acetic acid.
US08766015B2 Method for preparing a glycol mono-tertiary-butylether compound
Disclosed is a method of preparing a glycol mono-tertiary-butyl ether compound using a C4 hydrocarbon mixture containing isobutene and a glycol compound as reactants, in which a glycol di-tertiary-butyl ether compound as a byproduct is decomposed into isobutene and a glycol compound and the obtained isobutene and glycol compound are recycled as reactants, whereby product yield per unit raw material may be maximized. The method includes a catalytic reaction step for preparing a glycol mono-tertiary-butyl ether compound and a glycol di-tertiary-butyl ether compound as a byproduct by reaction between a glycol compound and a C4 hydrocarbon mixture containing isobutene in the presence of an acidic catalyst, a byproduct extraction step for separating the glycol mono-tertiary-butyl ether compound and the glycol di-tertiary-butyl ether compound, prepared through the catalytic reaction step, using a hydrophilic extractant and a lipophilic extractant, and a byproduct decomposition and recycling step for decomposing the separated glycol di-tertiary-butyl ether compound into a glycol compound and isobutene and recycling the decomposed glycol compound and isobutene as the reactants to the catalytic reaction step.
US08766011B2 Method for synthesizing aminoalcohols
The present invention relates to a method for synthesizing amonoalcohols (e.g., aminoalcohols that contain an amine group that is either unsubstituted, mono-substituted, or di-substituted) and to the products formed therefrom. In one embodiment, the present invention relates to a method for synthesizing aminoalcohols from a corresponding aminoaldehyde and to the products formed therefrom. In another embodiment, the present invention relates to a method for synthesizing aminoalcohols from a corresponding aminoaldehyde via a hydrogenation process using a suitable catalyst (e.g., Raney® Nickel) and to the products formed therefrom. In still another embodiment, the present invention relates to aminoalcohols formed via direct hydrogenation from a corresponding aminoaldehyde without the intervening step of converting the aminoaldehyde starting material to a salt.
US08766007B2 Alkynyl phenyl derivative compounds for treating ophthalmic diseases and disorders
Provided are alkynyl phenyl derivative compounds, pharmaceutical compositions thereof, and methods of treating ophthalmic diseases and disorders, such as age-related macular degeneration and Stargardt's Disease, using said compounds and compositions.
US08765998B2 Production of formic acid
Processes for producing formic acid from a carbohydrate-containing material include hydrolyzing a carbohydrate-containing material (e.g., cellulose) in the presence of a mineral acid to form an intermediate hydrolysate comprising one or more sugars, and hydrolyzing the intermediate hydrolysate to form a hydrolysate product including formic acid.
US08765995B2 Process and apparatus for preparing vinyl acetate monomer
The invention provides a process for preparing vinyl acetate monomer (VAM) by reacting ethylene with acetic acid and oxygen in a tube bundle reactor in a heterogeneously catalysed, continuous gas phase process, characterized in that a high-performance catalyst with a space-time yield of more than 700 g of VAM/l of catalyst×hour is used for catalysis, and in that the tube bundle reactor comprises tubes with a ratio of inner surface area to volume of ≧130 m−1.
US08765989B2 Process
The present invention relates to a process for the preparation of S-[2-[1-(2-ethylbutyl)cyclohexylcarbonylamino]-phenyl]2-methylthiopropionate which is a useful pharmaceutical active compound.
US08765988B2 Lycopene intermediate 1, 3, 6, 10-tetra-double bond pentadec-carbon phosphonate as well as preparation method and use thereof
The invention relates to a novel important lycopene intermediate 3,7,11-trimethyl-1,3,6,10-tetraene-dodecyl diethyl phosphonate. A current lycopene intermediate 2,4,6,10-tetra-double bond pentadec-carbon phosphonate is difficult to synthesize. The invention provides a novel intermediate, which has the following synthesis steps of: preparing 2,6,10-trimethyl-3,5,9-undecane triene-1-aldehyde from pseudoionone; preparing 2,6,10-trimethyl-2,5,9-undecane triene-1-aldehyde from the 2,6,10-trimethyl-3,5,9-undecane triene-1-aldehyde; and subjecting the 2,6,10-trimethyl-2,5,9-undecane triene-1-aldehyde and tetraethyl methylenediphosphonate to condensation reaction to obtain target product. The invention can generate novel intermediate from raw material pseudoionone only by four reactions, thus the reactions are easy to control and great industrial value are achieved.
US08765986B2 Method for continuous hydrosilylation
The invention relates to a method for continuously producing silanes and/or organopolysiloxanes by hydrosilylation, in which at least one compound (A) containing at least one carbon-carbon multiple bond is reacted with at least one compound (B) comprising at least one Si—H functionality, wherein the reaction is carried out in a reaction mixing pump.
US08765984B2 Methods and systems for making thiol compounds from terminal olefinic compounds
The application discloses thiol ester molecules and α-hydroxy thiol ester molecules having a thiol group located on one of the final two carbon atoms in a carbon chain or a terminal or α-hydroxyl groups, respectively. The disclosed thiol ester molecules and or α-hydroxyl thiol ester molecules es may be made from unsaturated ester molecules having one or more terminal alkene groups. The disclosed techniques also provide methods for making unsaturated ester molecules having one or more terminal alkene groups by the metathesis of unsaturated esters having one or more internal carbon-carbon double bonds (e.g. natural source oils). The thiol ester molecules or α-hydroxy thiol ester molecule may be used in reactions with isocyanate monomers, epoxide monomer, or material having multiple alkene groups to make sealants, coatings, adhesives, and other products.
US08765981B2 Process for producing olefin oxide
A process for producing an olefin oxide which comprises reacting an olefin with oxygen in the presence of a catalyst comprising a copper oxide and a tellurium oxide.
US08765975B2 Production of dihydronepetalactone
This invention provides a process for producing dihydronepetalactone using mixtures comprising both trans-cis nepetalactone and cis-trans nepetalactone. A reaction mixture comprising trans-cis nepetalactone and cis-trans nepetalactone is first contacted with hydrogen in the presence of at least one hydrogenation catalyst under conditions that optimise the preferential conversion of trans-cis nepetalactone to dihydronepetalactone. Cis-trans nepetalactone is subsequently converted to dihydronepetalactone by contact with hydrogen in the presence of at least one hydrogenation catalyst.
US08765973B2 Etomidate analogues that do not inhibit adrenocortical steroid synthesis
The invention is directed to compounds according to formula (I): where R1 is L1C(O)OT or L1C(O)OL2C(O)OT; R2 is a substituted or unsubstituted C1-C10 alkyl, C2-C10 alkenyl, or C2-C10 alkynyl, or R1; n is an integer from 0 to 5; each R3 is independently halogen or R2; R4 and R5 are independently H, halogen, CN or CF3; L1 and L2 are each independently a bond, a substituted or unsubstituted C1-C10 alkylene, C2-C10 alkenylene, or C2-C10 alkynylene; and T is H, a substituted or unsubstituted C1-C10 alkyl, C2-C10 alkenyl, or C2-C10 alkynyl, nitrophenol, or cyclopropyl. The invention is also directed to a pharmaceutical composition comprising a compound according to formula (I) and a pharmaceutically acceptable carrier, and to methods for providing anesthesia in mammals by administering such a pharmaceutical composition.
US08765972B2 3-oxo-2,3-dihydro-1H-isoindole-4-carboxamides with selective PARP-1 inhibition
There are provided substituted 3-oxo-2,3-dihydro-1H-isoindole-4-carboxamide derivatives (I) which selectively inhibit the activity of poly (ADP-ribose) polymerase PARP-1 with respect to poly (ADP-ribose) polymerase PARP-2. The compounds of this invention are therefore useful in treating diseases such as cancer, cardiovascular diseases, central nervous system injury and different forms of inflammation. The present invention also provides methods for preparing these compounds, pharmaceutical compositions comprising these compounds, and methods of treating diseases utilizing pharmaceutical compositions comprising these compounds.
US08765968B2 Polymeric semiconductors, devices, and related methods
A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently H or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.
US08765967B2 Microcapsules with UV filter activity and process for producing them
The invention provides a process for producing microcapsules with UV filter activity, wherein at least one type of crosslinkable chromophore with UV-A and/or UV-B and/or UV-C filter activity and optionally at least one type of crosslinkable monomer which does not have UV-A and/or UV-B and/or UV-C filter activity are subjected to a crosslinking reaction in the absence of non-crosslinkable chromophores with UV-A and/or UV-B and/or UV-C filter activity and microcapsules obtainable by this process.
US08765962B1 Very efficient process for preparing an intermediate of etoricoxib
The present invention relates to an efficient process for preparing 1-(6-methylpyridin-3-yl)-2-[4-(methylsulfonyl)phenyl]ethanone, an intermediate of the synthesis of Etoricoxib. Water is employed as reaction medium.
US08765960B2 6-((S)-1- {1-[5-(2-hydroxy-ethoxy)-pyridin-2-yl]-1H-pyrazol-3-YL}-ethyl)-3H-1,3-benzothiazol-2-one as a tarp-gamma 8 dependent AMPA receptor antagonist
A TARP γ8 dependant AMPA receptor antagonist of the formula: its pharmaceutically acceptable salts, uses, and methods for its preparation are described.
US08765957B2 Process for making modulators of cystic fibrosis transmembrane conductance regulator
The invention provides a process for the preparation of a compound of Formula 1, comprising coupling a carboxylic acid of Formula 2 with an aniline of Formula 3 in the presence of a coupling agent.
US08765956B2 Nitrogen-containing heteroaryl compounds and methods of use thereof
The present invention relates to compounds suitable for use in mediating hypoxia inducible factor and for treating erythropoietin-associated conditions by increasing endogenous erythropoietin in vitro and in vivo.
US08765951B2 Acid gas absorbent composition
This invention provides novel compositions comprising substituted polyamines as acid gas scrubbing solutions and methods of using the compositions in an industrial system. The invention relates to the use of such polyamine compounds in industrial processes to remove acidic contaminants from natural and industrial fluid streams, such as natural gas, combustion gas, natural gas, synthesis gas, biogas, and other industrial fluid streams. The compositions and methods of the invention are useful for removal, absorption, or sequestration of acidic contaminants and sulfide contaminants including CO2, H2S, RSH, CS2, COS, and SO.
US08765950B2 Reagents for biomolecular labeling, detection and quantification employing raman spectroscopy
The present disclosure provides isotopically substituted compounds of the formula (II): wherein T, U, V, W, X, Y, Z, R0, R3, R4, R5 and R6 are as defined in the detailed description. The method for detection and quantification using the same is also disclosed.
US08765948B2 Processes for the preparation of uracil derivatives
The present invention relates to processes and intermediates for preparing Gonadotropin-Releasing Hormone (GnRH) receptor antagonists of structure (VI); and stereoisomers and pharmaceutically acceptable salts thereof.
US08765946B2 Methods of preparing and using quinazoline and quinoline derivatives
A method of preparing a compound of formula (I), A method for treating cancer or inhibiting growth of cancer cells including administering to a patient mammal in need thereof a pharmaceutical preparation including the compound. A method of treating or preventing a physiological disorder caused by abnormal protein tyrosine kinase activity in a mammal including administering to a mammal a pharmaceutical preparation including the compound.
US08765943B2 1,2,4-triazine suitable as a vulcanization accelerator and method for producing same
A 1,2,4-triazine of formula (I): and its process of manufacture and use.
US08765941B2 Aniline derivative having anti-RNA viral activity
Viruses, and particularly RNA viruses, have high mutation rates. Hence, antiviral agents that have been developed to date targeting protease or reverse transcriptase of viruses have quickly lost their effectiveness and resistant viruses have emerged. Also, in recent years, viral diseases caused by various new viruses such as SARS, avian influenza, and the hepatitis C have become social menaces. Therefore, the development of a novel antiviral agent that can cope with a virus resistant to an existing drug or a new virus and has a wide range of applications has been demanded. The present invention provides a novel anti-RNA viral agent and a method for use thereof. The present invention further provides an anti-RNA viral agent that is also effective against a new virus or a drug-resistant virus, and a method for use thereof.
US08765940B2 Heterocyclic compounds and their uses
Substituted bicyclic heteroaryls and compositions containing them, for the treatment of general inflammation, arthritis, rheumatic diseases, osteoarthritis, inflammatory bowel disorders, inflammatory eye disorders, inflammatory or unstable bladder disorders, psoriasis, skin complaints with inflammatory components, chronic inflammatory conditions, including but not restricted to autoimmune diseases such as systemic lupus erythematosis (SLE), myestenia gravis, rheumatoid arthritis, acute disseminated encephalomyelitis, idiopathic thrombocytopenic purpura, multiples sclerosis, Sjoegren's syndrome and autoimmune hemolytic anemia, allergic conditions including all forms of hypersensitivity, The present invention also enables methods for treating cancers that are mediated, dependent on or associated with p110 activity, including but not restricted to leukemias, such as Acute Myeloid leukaemia (AML) Myelo-dysplastic syndrome (MDS) myelo-proliferative diseases (MPD) Chronic Myeloid Leukemia (CML) T-cell Acute Lymphoblastic leukaemia (T-ALL) B-cell Acute Lymphoblastic leukaemia (B-ALL) Non Hodgkins Lymphoma (NHL) B-cell lymphoma and solid tumors, such as breast cancer.
US08765938B2 Process for production of polysaccharide and/or monosaccharide by hydrolysis of different polysaccharide
The object is to produce a polysaccharide and/or a monosaccharide efficiently by hydrolyzing a different polysaccharide efficiently. The hydrolysis of a polysaccharide is an important means for producing a monosaccharide that can be used as a starting material for the production of ethanol, the solubilization of a water-insoluble polysaccharide, and the production of a useful water-soluble low-polymeric saccharide or the like. For achieving the object, a polysaccharide to be hydrolyzed is reacted with water in the presence of a carbonaceous material having sulfonic acid group therein to cause the hydrolysis of the polysaccharide to be hydrolyzed, thereby producing a other polysaccharide and/or a monosaccharide.
US08765931B2 Double-stranded oligonucleotide compound for down-regulating the expression of CASP2 gene
The present invention relates to compositions and methods for inhibiting loss of a retinal ganglion cell in a subject, comprising non-invasively applying to the surface of the eye of the subject an ophthalmic composition comprising a therapeutically effective amount of at 5 least one siRNA which down regulates expression of a target gene associated with loss of the retinal ganglion cell, thereby inhibiting loss of the retinal ganglion cell in the subject. The methods of the invention also relate to the use of chemically modified siRNA compounds possessing structural motifs which down-regulate the expression of human genes expressed in retinal tissue in the mammalian eye.
US08765929B2 Promoter for use in transformation of algae
The objective of the present invention is to provide a transformation method that is applicable to a wide variety of species of algae with high efficiency. The promoter of the present invention is characterized in containing a polynucleotide constituting a non-coding region located upstream from a gene encoding a replication-associated protein of a CdebDNA virus or the like.
US08765928B2 Identification of isolated genomic nucleotide fragments from the p15 region of chromosome 11 encoding human tumor suppressing subtransferable candidate 4 (TSSC4) and variants thereof
Provided herein are isolated genomic polynucleotide fragments from the from the p15 region of chromosome 11 encoding human and tumor suppressing subtransferable candidate 4 (TSSC4) and methods of use.
US08765927B2 Identification of isolated genomic nucleotide fragments from the p15 region of chromosome 11 encoding human cluster of differentiation antigen 81 and variants thereof
Provided herein are isolated genomic polynucleotide fragments from the p15 arm of chromosome 11 and methods of use.
US08765924B2 Modified erythropoietin
This invention relates to novel protein conjugates, in particular, to novel pegylated proteins, and their methods of making and use. One aspect of the present invention relates to pegylated-erythropoietin having greater clinical efficacy and stability during shipment and storage than current erythropoietin formulations.
US08765923B2 Methods of obtaining freshwater or saltwater algae products enriched in glutelin proteins
Methods for selective extraction and fractionation of algal proteins from an algal biomass or algal culture are disclosed. A method of selective removal of products from an algal biomass provides for single and multistep extraction processes which allow for efficient separation of algal proteins. These proteins can be used as renewable sources of proteins for animal feedstocks and human food. Further, lipids remaining in the algal biomass after extraction of proteins can be used to generate renewable fuels.
US08765922B2 Device and method for separation of Neél- and brown-magnetic particles
A method and associated device for enrichment of Neél-magnetic particles from a dispersion of Brown-magnetic particles and Neél-magnetic particles. The device and method use ferromagnetic separation particles having a mean diameter of 100 to 250 μm located in a alternating magnetic field. The ferromagnetic separation particles have a magnetically and chemically inert coating.
US08765917B2 CD37-binding molecules and immunoconjugates thereof
Novel anti-cancer agents, including, but not limited to, antibodies and immunoconjugates, that bind to CD37 are provided. Methods of using the agents, antibodies, or immunoconjugates, such as methods of inhibiting tumor growth are further provided.
US08765915B2 Modified coagulation factor VIIa with extended half-life
The present invention relates to the fields of Factor VII (FVII) and Factor VIIa (FVIIa) albumin linked polypeptides. More specifically, the invention relates to cDNA sequences coding for human Factor VII and Factor VIIa and derivatives genetically fused to a cDNA coding for human serum albumin which may be linked by oligonucleotides which code for intervening peptidic linkers such encoded derivatives exhibiting improved stability and extended functional plasma half-life, recombinant expression vectors containing such cDNA sequences, host cells transformed with such recombinant expression vectors, recombinant polypeptides and derivatives which do have biological activities of the unmodified wild type protein but having improved stability and prolonged shelf-life and processes for the manufacture of such recombinant proteins and their derivatives. The invention also covers a transfer vector for use in human gene therapy, which comprises such modified DNA sequences.
US08765913B2 Human frizzled (FZD) receptor polypeptides and methods of use thereof for treating cancer and inhibiting growth of tumor cells
The present invention relates to compositions and methods for characterizing, diagnosing, and treating cancer. In particular the invention provides the means and methods for the diagnosis, characterization, prognosis and treatment of cancer and specifically targeting cancer stem cells. The present invention provides a soluble FZD receptor comprising an extracellular domain of a human FZD receptor that inhibits growth of tumor cells. The present invention still further provides a soluble receptor comprising a Fri domain of a human FZD receptor that binds a ligand of a human FZD receptor and said soluble receptor is capable of inhibiting tumor growth. The present invention still further provides a method of treating cancer comprising administering a soluble FZD receptor comprising for example, either an extracellular domain of a human FZD receptor or a Fri domain of a human FZD receptor, in an amount effective to inhibit tumor growth.
US08765909B2 Metastin derivatives and use thereof
The present invention provides stable metastin derivatives having excellent biological activities (a cancer metastasis suppressing activity, a cancer growth suppressing activity, a gonadotropic hormone secretion stimulating activity, sex hormone secretion stimulating activity, etc.). By substituting the constituent amino acids of metastin with specific amino acids, the metastin derivatives of the present invention achieve more improved blood stability, solubility, etc., reduced gelation tendency, improved pharmacokinetics, as well as exhibit an excellent cancer metastasis suppressing activity or a cancer growth suppressing activity. The metastin derivatives of the present invention also have a gonadotropic hormone secretion suppressing activity, sex hormone secretion suppressing activity, etc.
US08765902B2 Method for the production of polyamides in extruders
In a process for preparing a polyamide based on dicarboxylic acids and diamines in an extruder, a solid mixture comprising a monomer mixture composed of 50 mol % of dicarboxylic acid mixture composed of from 60 to 88 % by weight of terephthalic acid and from 12 to 40% by weight of isophthalic acid, in which up to 20% by weight of the dicarboxylic acid mixture may also be replaced by other dicarboxylic acids, and 50 mol % of hexamethylenediamine which may be up to 20% by weight replaced by other C2-30-diamines, in a corotatory twin-screw extruder for a residence time of from 10 seconds to 30 minutes, is heated to a temperature in the range from 150 to 400° C. while removing steam and if appropriate diamines through venting orifices.
US08765900B2 Aliphatic moisture-curable resins, coating compositions, and related processes
The present disclosure is directed to an aliphatic isocyanate-based moisture-curable resin. The disclosed resin may include an aliphatic isocyanate functional material and an cycloaliphatic isocyanate functional material. The resin may be used to formulate a coating composition that may exhibit no substantial sag when applied at a wet film thickness of at least 6 mils, and no substantial blistering when cured to a dry film thickness of at least 6 mils.
US08765899B2 Carbosilane polymer compositions for anti-reflective coatings
A silicon polymer material, which has a silicon polymer backbone with chromophore groups attached directly to at least a part of the silicon atoms, the polymer further exhibiting carbosilane bonds. The film forming composition and resulting coating properties can be tailored to suit the specific exposure wavelength and device fabrication and design requirements. By using two different chromophores the refractive index and the absorption co-efficient can be efficiently tuned. By varying the proportion of carbosilane bonds, and a desired Si-content of the anti-reflective coating composition can be obtained.
US08765898B2 Process for producing water-absorbing polymer particles
The invention relates to a process for producing water-absorbing polymer particles, comprising handling water-absorbing polymer particles in intermediate silos, storage silos and/or big bag filing stations that are connected with vent lines having a mitered joint.
US08765896B2 Acrylic copolymer with high heat resistance and high strength, and optical film comprising the same
The present invention relates to an acrylic copolymer having high heat resistance and high strength, and an optical film comprising the same, and more particularly, to an acrylic copolymer for optical films in which alkyl (meth)acrylate monomers; (meth)acrylate monomers comprising aromatic rings and/or aliphatic rings; and (meth)acrylamide monomers are included and polymerized. An acrylic copolymer according to the present invention is excellent in heat resistance while maintaining transparency. Further, an optical film comprising a compound resin including the acrylic copolymer has superior transparency and heat resistance and is excellent in formability, adhesion, retardation properties, and durability.
US08765894B2 Norbornene-type polymers having quaternary ammonium functionality
Embodiments of the present disclosure encompass vinyl addition and ROMP polymers having at least one type of repeating unit that encompasses a comprise N+(CH3)3OH− moiety. Other embodiments in accordance with the disclosure include alkali anion-exchange membranes (AAEMs) made from one of such polymers, anion fuel cells (AFCs) that encompass such AAEMs and components of such AFCs, other than the AAEM, that encompass one of such polymers.
US08765891B2 Laminate of an acrylic resin composition layer containing triazine based ultra-violet compounds and an organosiloxane resin composition layer
It is an object of the present invention to provide a laminate having excellent weatherability and abrasion resistance as well as adhesion.The present invention relates to a laminate comprising a base, a first layer formed by thermally curing an acrylic resin composition and a second layer formed by thermally curing an organosiloxane resin composition, all of which are formed in the mentioned order, wherein the acrylic resin composition comprises: (A) an acrylic copolymer which contains at least 70 mol % of a recurring unit represented by the following formula (A): wherein X is a hydrogen atom or methyl group, and Y is a methyl group, ethyl group, cycloalkyl group, hydroxyalkyl group having 2 to 5 carbon atoms or triazine-based ultraviolet absorber residue; (B) a blocked polyisocyanate compound; (C) a curing catalyst; and (D) a triazine-based ultraviolet absorber, and the organosiloxane resin composition comprises: (E) colloidal silica and (F) a hydrolysis condensate of an alkoxysilane.
US08765883B2 Stabilized polymeric thiol reagents
Disclosed are water soluble polymeric conjugates comprising the structure POLY-[Y—S—S-A]x, where POLY is a water soluble polymer; Y is a hydrocarbon-based spacer group, x is 1 to 2, S—S is a disulfide group attached to an sp3 hybridized carbon of Y; and A is a covalently linked residue of a pharmacologically active molecule. Preferably, the water soluble polymer is a PEG polymer. Also disclosed are polymeric reagents useful to prepare such conjugates, and methods of their formation and use.
US08765880B2 Terminal-modified difunctional sulfur-containing polymers, compositions thereof and methods of use
Disclosed are terminal-modified difunctional sulfur-containing polymers that are the reaction products of a sulfur-containing diol, an aldehyde or a ketone, and a compound containing a functional group. Compositions comprising the terminal-modified difunctional sulfur-containing polymers useful as sealants are also disclosed.
US08765879B2 Modified recycled polyester resin and molded article using the same
To provide a modified recycled polyester resin that has stable moldability, is capable of producing as a by-product only a small amount of gel-like material during the process of modification to allow stable cross-linking reaction, and can prevent the possibility of recleavage, and to provide a molded article using the same. The modified recycled polyester resin contains a recycled PET resin having a carboxyl group, and a modifying agent having an epoxy group and an oxazoline group, ends of the carboxyl group of the recycled PET resin being modified with the modifying agent, wherein a mole ratio between the oxazoline group and the epoxy group is within a range of 100:90 to 100:0.01, and an additive amount of the modifying agent is 0.001 to 15 parts by mass with respect to 100 parts by mass of the recycled PET resin.
US08765878B2 Resin composition and resin molded product
Provided is a resin composition including a compound in which a vinyl group in a side chain of a phosphazene compound is bonded to an α carbon in an aliphatic polyester resin.
US08765877B2 Multifunctional chain shuttling agents
The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes.
US08765871B2 Non-porous thermoformable polyurethane solid
The subject disclosure presents systems and methods for manufacturing a non-porous thermoformable polyurethane solid by combining an uncured polyurethane resin with Aluminum Trihydrate (ATH), a plurality of particulates, molecular sieves, and color particulates. This combination is mixed in a vacuum for a time period sufficient to initiate an exothermic reaction within the mixture. After the time period, the exothermically reacting mixture is allowed to cure to form the polyurethane solid. The curing may occur in a mold, i.e. by pouring or injecting the mixture into the mold. Alternatively, the mixture may be sprayed on to a surface and allowed to cure.
US08765869B2 Olefin polymers having associative groups, and adhesives containing same
The present invention relates to olefin polymers having associative groups containing nitrogen heterocyclic compounds, to hot-melt adhesives including such polymers, and to method for producing same. Specifically, the invention relates to a polymer comprising units from ethylene and from a monomer having associative groups, said monomer including a polymerizing reactive group and an associative group containing nitrogen heterocyclic compounds.
US08765868B2 Resin composition for insulating film or surface-protective film of electronic components, method for producing pattern-cured film and electronic components
A resin composition includes: (A) a polymer having a structural unit shown by the formula (I), and an acidic functional group or a group derived therefrom at both of the terminals; wherein X1 is a di- to octa-valent organic group, Y1 is a di- to octa-valent organic group, R1 is a hydrogen atom or an organic group having 1 to 20 carbon atoms, R2 is a hydrogen atom or a monovalent organic group, when plural R1s or R2s exist, the plural R1s or R2s may be the same or different, p and q are independently an integer of 0 to 4, l and m are independently an integer of 0 to 2, and n is an integer of 2 or more indicating the number of structural units; (B) a solvent; and (C) a compound shown by formula (II) wherein R3 is a monovalent organic group.
US08765867B2 Heat-resistant resin paste and method for producing same
An object of the present invention is to provide a heat-resistant resin paste that enables the formation of a precise pattern, exhibits excellent adhesiveness, heat resistance and flexibility, and enables a shortening of the production time, as well as a method for producing thereof. The present invention relates to a heat-resistant resin paste, comprising a first organic solvent (A1), a second organic solvent (A2) that comprises a lactone, a heat-resistant resin (B) that is soluble in a mixed organic solvent of (A1) and (A2), and a heat-resistant resin filler (C) that is soluble in (A1) but insoluble in (A2), wherein (C) is dispersed within a solution comprising (A1), (A2) and (B).
US08765866B2 Additive for a thermoplastic resin, a process for producing the same, a thermoplastic resin composition, and a shaped article
Disclosed is an additive for a thermoplastic resin, which provides a thermoplastic resin composition excellent in formability and also provides a shaped article excellent in surface appearance and flame retardance.The additive for a thermoplastic resin comprises tetrafluoroethylene polymer (A) and alkyl methacrylate polymer (B) containing 50% by mass or more of units of alkyl methacrylate having an alkyl group with carbon numbers of 2 to 6.
US08765860B2 Injection molding composition and producing method thereof
An injection molding composition, having a small fluctuation characteristic and a better characteristic, is provided. The above composition is the injection molding composition comprising a ferrite powder which is a collection of ferrite particles, a first binder and a second binder. A weight and a specific surface area of the ferrite powders are represented by Wp and S, and a weight and a density of the first binder and the second binder is represented by Wb1, Wb2, and Db1, Db2. A hypothetical thickness Tb1 of the first binder is 2.0 to 15.0, and a hypothetical thickness Tb2 of the second binder is 16.5 to 32.0. In the composition, it is preferable that coated ferrite particles coating the outer circumference of the ferrite particles with the first binder and the second binder exist. Tb1 [nm]=(Wb1×103)/(Db1×Wp×S)  formula (1) Tb2 [nm]=(Wb2×103)/(Db2×Wp×S)  formula (2)
US08765859B2 Polymer-filler coupling additives
Polymer-filler coupling compounds with the formula B-A-Sx—N are claimed. In these compounds, B is an azaheterocyclic oxygen or sulfur containing moiety, or an allyltin moiety; Sx is a polysulfide, where x is between 2 and about 10; A is a linking atom or group that forms a bridge between B and Sx; and N is a blocking group. Sx can be a disulfide. N can be a conventional blocking group or other group such as -A-B. Methods for using the polymer-filler coupling compounds to modify polymers containing unsaturated carbon-carbon bonds and promote filler dispersion are also claimed. Additionally, vulcanizable rubber compositions containing the polymer-filler coupling compounds and methods for making vulcanized rubber compositions using the polymer-filler coupling compounds are also claimed.
US08765857B2 Particulate water retaining material for cultivating plant having water absorbent resin as main component
A particulate water retaining material for cultivating plant comprising (A) a carboxyl group-containing water-insoluble water absorbent resin and (B) a polyvalent metal compound, by having the compound (B) deposited on the rerin (A), it is made possible to possess an outstanding water absorbing property without impairing the growth of a plant.
US08765850B2 Polyacetal resin composition and preparation process thereof
Provided is a polyacetal resin composition obtained from a raw material composition containing a polyacetal resin, a hydrazine derivative, and a compound for lowering the melting point of the hydrazine derivative, wherein a mixture of the hydrazine derivative and the compound satisfies both of the following conditions: T1
US08765849B2 Reinforced flame-retardant polyamide composition
The invention relates to a composition comprising, relative to the total weight of the composition: between 25% and 52% by weight of at least one semi-crystalline or amorphous polyamide, having an amine chain-end content of less than 0.040 meq/g, between 24% and 40% by weight of at least one reinforcer, and between 24% and 35% by weight of at least one metal salt, optionally contained in a polymer, chosen from a metal salt of phosphinic acid, a metal salt of diphosphinic acid, and a mixture thereof. The invention also relates to the process for preparing this composition and its use.
US08765848B2 Modified waxes, a process for their preparation, and their use
The invention relates to waxes modified with sterically hindered amines, to a process for their preparation and to their use for stabilizing organic material.
US08765845B2 Hydraulic binder composition
Compositions comprising a hydraulic binder such as cement or gypsum and a hydroxypropyl guar derivative that comprises unsubstituted linear or branched C6-C8 alkyl chains possess excellent water retention characteristics.
US08765844B2 Rubber composition, its manufacturing method and pneumatic tire
A manufacturing method of rubber composition for tire tread or the other, which is comprised of adding 30-110 mass parts of silica powders to 100 mass parts of diene rubber component and adding silane coupling agent by 3-15 mass % of the silica powders, comprising: preparing hetero-modified SBR having hetero atom functional group; a first kneader-mixing step, in which 60-85 mass parts of the diene rubber component including no less than 20 mass % of the hetero-modified SBR is mixed in a kneader device with substantially all of the reinforcing fillers; taking out of obtained mixture to give a master batch; and second kneader-mixing step, in which the master batch is mixed substantially solely with remaining mass parts of the diene component.
US08765842B2 Method for producing polymeric solids
The invention relates to a method for producing polymeric solids free of auxiliary emulators starting from polymer latices (dispersion), wherein a polymer dispersion with a starting ph-value greater than 9 is set to a ph-value of 6 to 9 by adding gaseous carbon dioxide and the polymer dispersion is subsequently coagulated by shearing and/or freezing.
US08765838B2 Non-aqueous ink composition for inkjet printing
A non-aqueous ink composition for inkjet printing, comprising 5 to 15% by mass of pigment relative to a mass of the non-aqueous ink composition, a pigment dispersant in such an amount that a mass ratio of the pigment dispersant to the pigment ranges from 0.2 to 2.0, and an organic solvent, the pigment dispersant comprising (A) a polyamide having a polyester side chain and/or a copolymer of vinylpyrrolidone and a C10-40 alkene, and (B) an alkyl(alkyl)acrylate copolymer having a C12-25 alkyl group and a nitrogen-containing group in such an amount that a mass ratio of the dispersant (B) to a total of the dispersant (A) and the dispersant (B), (B)/[(A)+(B)], ranges from 0.75 to 0.99. The ink composition has good storage stability and causes no satellite even printed in an environment of a low temperature.
US08765837B2 Dental curable composition
[Problems] To provide a chemical polymerization type curable composition which can achieve a very large strength of adhesion even without irradiated with light, and is used in the field of dental therapy.[Means for Solution] A dental curable composition comprising (A) a polymerizable monomer component containing an acidic group-containing polymerizable monomer, (B) water, and (C) a chemical polymerization initiator component comprising a radical-generating species and a reactive species that generates radicals upon reacting with the radical-generating species; wherein, the dental curable composition is stored being divided into a plurality of packages, and is polymerized and cured by mixing together the components contained in the packages; and wherein one package (I) among the packages contains the component (A) and the component (B), and, further, contains polyvalent metal ions in an amount of 0.3 to 10 meq per gram of the polymerizable monomer component (A) contained in the package; and the chemical polymerization initiator (C) is stored being divided into at least two packages so that the radical-generating species and the reactive species do not come in contact with each other.
US08765835B2 Epdxy resin composition having monocyclic aliphatic hydrocarbon ring
There is provided a curable composition having a low viscosity and high cationic curability. A curable composition including an epoxy compound of Formula (1): [in Formula (1), A is a monocyclic aliphatic hydrocarbon group optionally containing an epoxy group; R1, R2, R3 and R4 are independently a hydrogen atom or a C1-10 alkyl group; n1 and n2 are independently an integer of 2 to 6; n3 and n4 are individually an integer of 2; and n5 and n6 are individually an integer of 1], and an acid generator.
US08765834B2 Crosslinked polyolefin polymer blends
Crosslinked polyolefin blends, methods for their production, and articles made of the same are provided. In at least one specific embodiment, the polyolefin blends comprise a first polymer formed in a first reactor and a second polymer formed in a second reactor. The first and second polymers, as well as the resulting blend, may comprise units derived from propylene, ethylene, and a diene. The blended composition can then be compounded with one or more coagents, antioxidants, UV sensitizers, and/or other additives and crosslinked, preferably by exposure to UV radiation and/or energetic photons. The crosslinked polymers are particularly useful for making fibers, films, and nonwovens.
US08765829B2 Phenolic foam
A phenolic foam is made by foaming and curing a foamable phenolic resin composition that comprises a phenolic resin, a blowing agent, an acid catalyst and an inorganic filler. The blowing agent comprises an aliphatic hydrocarbon containing from 1 to 8 carbon atoms and the inorganic filler is at least one selected from a metal hydroxide, a metal oxide, a metal carbonate and a metal powder. The phenolic foam has a pH of 5 or more. The phenolic foam has a higher pH value compared with conventional phenolic foam and reduces corrosion risk when in contact with metallic materials. The phenolic foam maintains excellent long-term stable thermal insulation performance, low water uptake and fire resistance performance and by using a hydrocarbon blowing agent, does not harm the environment as an ozone depleting or global warming material.
US08765827B2 Multifunctional biocomposite additive compositions and methods
Biocomposite compositions and compositions, which include dried distillers solubles, and which can be used in making biocomposite compositions are described. Methods for preparing the compositions are also described.
US08765826B2 Expandable composite resin particles for long-term storage, pre-expanded particles formed therefrom and expanded molded articles
Expandable composite resin particles for long-term storage, comprising 500 to 5000 ppm of water and 7.5 to 11.0% by weight of pentane in composite resin of polyolefin-based resin and polystyrene-based resin.
US08765824B2 Ethanol stable polyether epoxy based membrane for ethanol and aromatics separation
The present invention is directed to a membrane for ethanol and aromatics separation that is stable in an alcohol containing environment. The membrane is a polyether epoxy resin having an aliphatic substituted epoxide. The invention also teaches a method to control the flux and selectivity of the membrane.
US08765822B2 Concentrated inverse latex, process for preparing it and industrial use thereof
A composition in the form of a positive latex includes: a) 50-80 wt. % of at least one cross-linked, branched, or linear organic polymer (P), b) 5-10 wt. % of a water-in-oil (W/O) emulsifying system (S1), c) 5-45 wt. % of at least one oil, and d) 0-5 wt. % of water. Between 0.01 mol. % and 10 mol. % of the monomeric patterns of the monomer P include at least one neutral monomer of formula (I): C(R1)(R3)═C(R2)—C(═O)—O—(CH2—CH2—O)n—R4 (I) wherein the radicals R1, R2 and R3, which are the same or different, independently represent a hydrogen atom or a linear or branched alkyl radical including between 1 and 4 carbon atoms, the radical R4 represents a linear or branched, saturated or unsaturated, aliphatic radical including between 6 and 30 carbon atoms, and n represents a number between 1 and 50. A production method and use are also described.
US08765818B1 Tannin formulation for treating GI spasms in a subject having Crohn's disease or ulcerative colitis
Methods of treating gastrointestinal spasms are provided. For example, methods of treating gastrointestinal spasms are provided, such methods not requiring the use of systemic drugs that have shown to (i) provide slow relief, (ii) cause adverse side effects, (iii) limit activities, (iv) worsen existing gastrointestinal conditions, (v) be unrecommended in several gastrointestinal conditions that include gastrointestinal spasms, or (vi) be unrecommended in the absence of diarrhea.
US08765817B1 Selective inhibitors of EG5 motors and methods of use
Embodiments of the present invention comprises a compound of formula I or its enantiomer, diastereomer, stereoisomer or its pharmaceutically acceptable salt, methods of use and methods of synthesis.
US08765814B2 N-hydroxyformamide derivative and medicament containing same
A compound represented by the following general formula (I) which has ADAM17 inhibitory activity, or a salt thereof, or a solvate thereof: wherein X represents a phenylene group; Y represents a hydrogen atom, —(CH2)mR1 or the like; R1 represents —NR5COR2, —NR5SO2R2 or —NR3R4; R2 represents a C1-C6 alkyl group, an aryl group, or a C1-C6 alkoxy group; R3 and R4 represent a C1-C6 alkyl group and the like; R5 represents a hydrogen atom or a C1-C6 alkyl group or the like; m indicates an integer of from 0 to 4; and Z represents a hydrogen atom or a C1-C6 alkyl group.
US08765806B2 Biocidal composition of 2,6-dimethyl-M-dioxane-4-OL acetate and methods of use
Provided is a biocidal composition comprising 2,6-dimethyl-m-dioxane-4-ol acetate and an isothiazolinone biocidal compound. The composition is useful for controlling microorganisms in aqueous or water containing systems.
US08765802B2 Kinase inhibitors, compositions thereof, and methods of use therewith
Provided herein are Compounds having the following structure: wherein A, L, X and ring B are as defined herein, compositions comprising an effective amount of a Compound and methods for treating or preventing cancer, hypoxia, diabetes, stroke, autoimmune disease or a condition treatable or preventable by inhibition of Chk2, the ATM-Chk2 pathway or RSK2 comprising administering an effective amount of a Compound to a patient in need thereof.
US08765801B2 Polymorphs of azabicyclohexane
The invention provides polymorphic crystalline forms of acid addition salts of (+)-1-(3,4-dichlorophenyl)-3-azabicyclo[3.1.0]hexane designated as polymorph form A, polymorph form B and polymorph form C, where polymorph form A is more thermodynamically stable than the other forms, methods for preparing and using such polymorph forms and pharmaceutical compositions containing such polymorph forms.
US08765799B2 Streptospirole derivatives
The invention relates to streptospirole derivatives of the general formula (I), wherein R1, R2, R3, X1, X2, Y1 and Y2 are as defined herein, a process for the preparation of said compounds by fermenting the microorganism Streptomyces sp. ST 108140 (DSM 19369) and optionally derivatizing the compounds produced by said microorganism, a pharmaceutical composition comprising at least one compound of the formula (I), and the use of a compound of the formula (I) for the preparation of a medicament for the treatment and/or prophylaxis of bacterial infections.
US08765798B2 Peptide derivatives with therapeutic activity
Dipeptide compounds containing a histidine residue proved to have interesting blocking activity on secondary products from lipid oxidative stress, in particular on unsaturated aldehydes such as malondialdehyde and hydroxynonenal, which are known to contribute to the inset of quite a number of chronic pathologies such as neurodegenerative, inflammatory chronic, cardiovascular diseases, diabetes complications and cataract.
US08765797B2 TG2 inhibitors and uses thereof
Methods and compounds for treating cancer, dmg resistance and/or metastasis are described herein. These methods and compounds can inhibit the expression of aberrant TG2 expression and/or inhibit the binding of GTP to TG2, and thereby prevent the induction of epithelial to mesenchymal transition of cancer cells, and a stem cell-like phenotype.
US08765796B2 Compounds, methods and formulations for the oral delivery of a glucagon-like peptide (GLP-1) compound or a melanocortin-4 receptor (MC4) agonist peptide
The present invention relates to novel compounds, methods, and formulations useful for the oral delivery of a GLP-1 compound or an MC4 agonist peptide.
US08765794B2 Compositions and methods for wound care
The present disclosure relates to compositions for and methods of repairing the stratum corneum, compositions and methods for inhibiting excessive transepidermal water loss, compositions for and methods of treating skin that is distressed or wounded as a result of a disease or other biological condition or process (as distinguished from wounds resulting from trauma), compositions for and methods of treating chronic wounds, and compositions for the inhibition and treatment of necrosis and extended quiescence that result in cellular necrosis instead of normal proliferation.
US08765791B2 Method of treating cancer using a neuropeptide Y 5R (NP Y5R) antagonist
The present invention relates to methods for treating cancer by administering a therapeutically effective amount of compound of formula (I), such as selective NPY5R antagonist MK-0557 (trans-N-[1-(2-fluorophenyl)-3-pyrazolyl]-3-oxospiro[6-azaisobenzofuran-1(3H), 1′-cyclohexane]-4′-carboxamide), or a pharmaceutically acceptable salt thereof, to a subject in need thereof The methods can further comprise administering a chemotherapeutic agent to the subject in need thereof.
US08765785B2 Solifenacin salts
The invention concerns fumarate salts of solifenacin, as well as pharmaceutical compositions comprising fumarate salts of solifenacin. The invention furthermore concerns a process for preparing solifenacin and salts thereof. The fumarate salt provides improved properties over the known solifenacin salts, especially in terms of its stability. The novel process for its preparation is furthermore improved over known processes for preparing solifenacin in that it provides a higher yield and recovers a greater amount of starting material.
US08765783B2 Pharmaceutical composition for treatment of disease due to vascular constriction or vasodilation
A therapeutic and/or preventing agent for a disease due to vascular constriction or vasodilation comprising a EDG-5 modulator. Since EDG-5 modulator specifically binds EDG-5 and shows antagonistic or agonistic action, EDG-5 antagonist is useful for treating and/or preventing for a disease due to vascular constriction, for example, cerebrovascular spasmodic disorder after subarachnoid hemorrhage or stroke, cardiovasucular spasmodic disorder, hypertension, renal disease, cardiac infarction, cardiac angina, arrhythmia, facilitation of the portal blood pressure involved in liver cirrhosis, varicosity involved in liver cirrhosis and the like, or EDG-5 agonist is useful for treating and/or preventing for a disease due to vasodilation of blood vessels, for example, chronic headache (such as migraine, tension-type headache, mixed-type headache thereof, or migrainous neuralgia), haemorrhoid, congestive disorder and the like.
US08765779B2 Tricyclic derivatives and their pharmaceutical use and compositions
This application relates to tricyclic compounds of Formula I: including all stereoisomers, mixtures of stereoisomers, and salts thereof. This application also relates to compositions comprising compounds of Formula I and uses therefore.
US08765778B2 Rifamycin derivatives
Disclosed are rifamycin derivatives having antibacterial activities, wherein the compounds have the following general formula: wherein: R is hydrogen or acetyl; R1 and R2 are independently selected from the group consisting of hydrogen, (C1-4) alkyl, benzyloxy, mono- and di-(C1-3) alkylamino-(C1-4)alkyl, (C1-3)alkoxy, (C1-4) alkyl, hydroxy-methyl, hydroxy-(C2-4)-alkyl, and nitro or R1 and R2 taken together with two consecutive carbon atoms of the pyridine nucleus form a benzene ring optionally substituted by one or two methyl or ethyl groups and R3 is hydroxyalkyl (C1-4). In addition, processes to obtain these compounds are described.
US08765776B2 Antihypertensive pharmaceutical composition
Provided is an antihypertensive pharmaceutical composition containing Fimasartan, a pharmaceutically acceptable salt thereof, a solvate thereof or a hydrate thereof as an angiotensin II receptor blocker, and Amlodipine, an isomer thereof, a pharmaceutically acceptable salt thereof, a solvate thereof or a hydrate thereof as a calcium channel blocker.
US08765775B2 Anti-angiogenic compounds
The invention relates to compounds of formula 1, tautomers and salts thereof, wherein R1, R2, R3, R4, and R5 have the meanings indicated in the specification. These compounds are receptor tyrosine kinase EphB4 inhibitors useful for the treatment of angiogenesis dependent cancers and intraocular neovascular syndromes. The invention further relates to a method termed ALTA (anchor-based library tailoring) of selecting compounds from a large compound library for screening as EphB4 inhibitors by computational procedures.
US08765772B2 Purine derivatives for use in the treatment of allergic, inflammatory and infectious diseases
The present invention relates to compounds of formula (I): wherein R1 is C1-6alkylamino, C1-6alkoxy, or C3-7cycloalkyloxy; m is an integer having a value of 3 to 6; n is an integer having a value of 0 to 4; and salts thereof are inducers of human interferon. Compounds which induce human interferon may be useful in the treatment of various disorders, for example the treatment of allergic diseases and other inflammatory conditions for example allergic rhinitis and asthma, the treatment of infectious diseases and cancer, and may also be useful as vaccine adjuvants.
US08765771B2 Condensed pyridine or condensed pyrimidine derivative, and medicinal agent comprising same
The present invention relates to provision of a novel compound that has an activity of promoting insulin secretion from pancreatic β cells and thus is useful as a prophylaxis and/or therapeutic agent for diseases caused by hyperglycemia such as diabetes mellitus, andthe compound represented by the following formula (1): wherein one of A and B represents a nitrogen atom and the other represents a nitrogen atom or CR10, X represents an oxygen atom, a sulfur atom or —(CH2)n-N(R12)—, Y represents an oxygen atom, a sulfur atom or —N(R13)—, and R1 to R9 each represent a hydrogen atom or another substituent, or a salt thereof, or a solvate of the compound or the salt.
US08765768B2 Heterocyclic compounds and their uses
Substituted bicyclic heteroaryls having the general formula (I) and compositions containing them, for the treatment of general inflammation, arthritis, rheumatic diseases, osteoarthritis, inflammatory bowel disorders, inflammatory eye disorders, inflammatory or unstable bladder disorders, psoriasis, skin complaints with inflammatory components, chronic inflammatory conditions, including but not restricted to autoimmune diseases such as systemic lupus erythematosis (SLE), myestenia gravis, rheumatoid arthritis, acute disseminated encephalomyelitis, idiopathic thrombocytopenic purpura, multiples sclerosis, Sjoegren's syndrome and autoimmune hemolytic anemia, allergic conditions including all forms of hypersensitivity, The present invention also enables methods for treating cancers that are mediated, dependent on or associated with p1 108 activity, including but not restricted to leukemias, such as Acute Myeloid leukaemia (AML), Myelodysplastic syndrome (MDS), myelo-proliferative diseases (MPD), Chronic Myeloid Leukemia (CML), T-cell Acute Lymphoblastic leukaemia (T-ALL), B-cell Acute Lymphoblastic leukaemia (B-ALL), Non Hodgkins Lymphoma (NHL), B-cell lymphoma and solid tumors, such as breast cancer.
US08765763B2 Substituted piperazines as CGRP antagonists
The present invention relates to new CGRP-antagonists of general formula I wherein R1, R2, R3, Ra, Rb, Rc, X, Y and Z are defined as mentioned hereinafter, the individual diastereomers, the individual enantiomers and the salts thereof, particularly the physiologically acceptable salts thereof with inorganic or organic acids or bases, medicaments containing these compounds, the use thereof and processes for the preparation thereof.
US08765762B2 Pyrazolopyridazines and methods for treating retinal-degerative diseases and hearing loss associated with usher syndrome
Compounds, compositions and methods for the treatment of retinal degenerative diseases, such as retinitis pigmentosa, Leber's congenital Amaurosis, Syndromic retinal degenerations, age-related macular degeneration and Usher Syndrome, and hearing loss associated with Usher Syndrome are described herein.
US08765758B2 Compositions and methods for eye whitening
The invention provides compositions and methods for whitening of eyes. The provided compositions and methods utilize low concentrations of selective α-2 adrenergic receptor agonists. The compositions preferably include brimonidine.
US08765754B2 Pyrrolotriazine compounds
A compound of formula (I): wherein all symbols have the same meanings as defined in the specification; a salt thereof, a solvate thereof, an N-oxide thereof, or a prodrug thereof, has a Btk inhibitory activity, and is useful as a method for preventing and/or treating a rheumatoid arthritis, an autoimmune disease, a B cell lymphoma of cancer, and the like.
US08765749B2 1,6-disubstituted indole compounds as protein kinase inhibitors
Disclosed are a 1,6-substituted indole compound having a protein kinase inhibition activity, a pharmaceutically acceptable salt, and a pharmaceutical composition for prevention and treatment of cancers caused by abnormal cell growth comprising the compound as an effective ingredient.Since the novel indole compound exhibits superior inhibition activity against various protein kinases involved in growth factor signal transduction, it is useful as an agent for preventing or treating cancers caused by abnormal cell growth.
US08765746B2 Heteroaryls and uses thereof
This invention provides compounds of formula I-A or I-B: wherein HY, G1, G2, R2, R12, W1, W2, n, and Ring A are as described in the specification. The compounds are inhibitors of PI3K and/or mTor and are thus useful for treating proliferative, inflammatory, or cardiovascular disorders.
US08765745B2 Compounds for enzyme inhibition
One aspect of the invention relates to inhibitors that preferentially inhibit immunoproteasome activity over constitutive proteasome activity. In certain embodiments, the invention relates to the treatment of immune related diseases, comprising administering a compound of the invention. In certain embodiments, the invention relates to the treatment of cancer, comprising administering a compound of the invention.
US08765743B2 Compounds
The invention is directed to compounds of formula (I) and salts thereof. The compounds of the invention are inhibitors of PI3-kinase activity.
US08765741B2 5,6-dihydro-1H-pyridin-2-one compounds
The invention is directed to 5,6-dihydro-1H-pyridin-2-one compounds of Formula I wherein X is CR3, and A is and pharmaceutical compositions containing such compounds that are useful in treating infections by hepatitis C virus.
US08765739B2 Azetidine compound and pharmaceutical use thereof
Compounds of formula [I]: wherein each symbol is as defined in the description, or a pharmaceutically acceptable salts or solvates thereof.
US08765734B2 Piperidin-4-yl azetidine derivatives as JAK1 inhibitors
The present invention provides piperidin-4-yl azetidine derivatives, as well as their compositions and methods of use, that modulate the activity of Janus kinase 1 (JAK1) and are useful in the treatment of diseases related to the activity of JAK1 including, for example, inflammatory disorders, autoimmune disorders, cancer, and other diseases.
US08765733B2 Amine substituted methanesulfonamide derivatives as vanilloid receptor ligands
The invention relates to amine substituted methanesulfonamide derivatives as vanilloid receptor ligands, to pharmaceutical compositions containing these compounds and also to these compounds for use in the treatment and/or prophylaxis of pain and further diseases and/or disorders.
US08765731B2 Benzimidazole analogues for the treatment or prevention of flavivirus infections
Compounds represented by formula I: or pharmaceutically acceptable salts and solvates thereof, wherein A, B, B′, X, Y, R1, R1′, R2, R2′, R3, R3′, R5, R5′, R6, m, n, or p are as defined herein, are useful for treating flaviviridae viral infections.
US08765730B2 1-hydroxyimino-3-phenyl-propanes
This invention relates to novel 1-hydroxyimino-3-phenyl-propanes of the formula wherein R1 to R10 are as defined in the description and in the claims, as well as pharmaceutically acceptable salts thereof. These compounds are GPBAR1 agonists and may be used as medicaments for the treatment of diseases such as type II diabetes.
US08765727B2 Macrocyclic compounds and their use as kinase inhibitors
The present invention relates to macrocyclic compounds of Formula I: or pharmaceutically acceptable salts thereof or quaternary ammonium salts thereof wherein constituent members are provided hereinwith, as well as their compositions and methods of use, which are JAK/ALK inhibitors useful in the treatment of JAK/ALK-associated diseases including, for example, inflammatory and autoimmune disorders, as well as cancer.
US08765726B2 Use of pyridone derivatives in the prevention or treatment of tissue or organ toxicity induced by cytotoxic agents and radiation
The present invention is directed to a novel use of pyridone derivatives such as pirfenidone for the prevention and treatment of damages to tissues or organs induced by various cytotoxic agents, such as chemotherapeutic agents, biologics, immunosuppressants and radiation. Such prophylactic and/or therapeutic effects of the pyridone derivatives make it possible to increase therapeutic dosages of the cytotoxic agent, thereby enhancing the therapeutic efficacy of the cytotoxic agent and radiation therapy.
US08765716B2 Pharmaceutical composition containing docetaxel-cyclodextrin inclusion complex and its preparing process
A docetaxel inclusion complex having improved water-solubility (up to 15 mg/ml) and stability (stability constant Ka=2056 M−1-13051 M−1), comprises docetaxel and hydroxypropyl-beta-cyclodextrin and/or sulfobutyl-beta-cyclodextrin in a ratio of 1:10-150. The method includes steps as follows: docetaxel dissolved in ethanol is added into water solution of cyclodextrin via stirring, until docetaxel is completely dissolved; said solution is filtered in 0.2-04 μm microporous membrane then ethanol is removed through reduced pressure to obtain the inclusion complex in a liquid form; or ethanol, followed by water is removed through reduced pressure, then dried to obtain the inclusion complex in a solid form.
US08765715B2 Method of providing hemostasis using flexible bioresorbable foam
A method of providing hemostasis of bleeding tissue. A flexible bioresorbable foam is formed that consists essentially of carboxymethylcellulose. The flexible bioresorbable foam is crosslinked. Chain scission is performed on the crosslinked flexible bioresorbable foam to provide the flexible bioresorbable foam with a selected in-vivo residence time of between about 3 days and about 14 days. Hemostasis is caused by applying the flexible bioresorbable foam to bleeding tissue. The flexible bioresorbable foam is resorbed in-vivo. The selected in-vivo residence time is a time between the flexible bioresorbable foam being applied to the tissue and the flexible bioresorbable foam having been substantially completely absorbed into the tissue.
US08765713B2 Method for determination of sensitivity to anti-cancer agent
A marker for determining sensitivity of a patient to an anti-cancer agent, and novel cancer therapeutic means employing the marker, wherein the marker for determining sensitivity to an anti-cancer agent is a protein or a fragment, where in the protein or a fragment thereof exhibits a peak at m/z of 5,300 to 5,400, a peak at m/z of 6,130 to 6,230, a peak at m/z of 7,000 to 7,080 a peak at m/z of 7,840 to 7,920, a peak at m/z of 8,920 to 9,000, a peak at m/z of 12,440 to 12,560, a peak at m/z of 17,100 to 17,270, a peak at m/z of 18,290 to 18,470, a peak at m/z of 24,660 to 24,750, a peak at m/z of 35,980 to 36,290, a peak at m/z of 8,650 to 8,750, a peak at m/z of 9,100 to 9,200, a peak at m/z of 11,760 to 11,890, the peaks being determined by means of a mass spectrometer.
US08765699B2 Oligoribonucleotides and methods of use thereof for treatment of alopecia, acute renal failure and other diseases
The invention relates to a double-stranded compound, preferably an oligoribonucleotide, which down-regulates the expression of a human p53 gene. The invention also relates to a pharmaceutical composition comprising the compound, or a vector capable of expressing the oligoribonucleotide compound, and a pharmaceutically acceptable carrier. The present invention also contemplates a method of treating a patient suffering from alopecia or acute renal failure or other diseases comprising administering to the patient the pharmaceutical composition in a therapeutically effective dose so as to thereby treat the patient. The alopecia may be induced by chemotherapy or radiotherapy, and the patient may be suffering from cancer, in particular breast cancer.
US08765689B2 Anti-ageing peptides modulating survivin and compositions including same
Peptide compounds of the general formula (I) R1-(AA)n-X1—X2-Arg-Glu-Met-Asn-Trp-X3-(AA)p-R2 modulating the survivin protein are described. Furthermore, cosmetic or pharmaceutical compositions, including at least one peptide of the general formula (I), in a physiologically acceptable medium are described. Additionally, methods for treating the cutaneous signs of ageing and photo-ageing, treating the skin against external aggressions, and limiting hair loss and/or stimulating hair growth are described.
US08765685B2 Methods for treating edema by administering a Soluble Hyaluronidase Glycoprotein (sHASEGP)
Provided are soluble neutral active Hyaluronidase Glycoproteins (sHASEGP's), methods of manufacture, and their use to facilitate administration of other molecules or to alleviate glycosaminoglycan associated pathologies. Minimally active polypeptide domains of the soluble, neutral active sHASEGP domains are described that include asparagine-linked sugar moieties required for a functional neutral active hyaluronidase domain. Included are modified amino-terminal leader peptides that enhance secretion of sHASEGP. Sialated and pegylated forms of the sHASEGPs also are provided. Methods of treatment by administering sHASEGPs and modified forms thereof also are provided.
US08765683B2 T-140 peptide analogs having CXCR4 super-agonist activity for cancer therapy
The present invention is directed to novel therapeutic uses of T-140 analog peptides and compositions comprising same. Specifically, the invention provides compositions and methods useful in cancer therapy.
US08765677B2 Omega conotoxin peptides
This invention relates to an isolated, synthetic or recombinant peptide, wherein the peptide comprises the sequence: C K G K G A Xaa1 C R Xaa2 Xaa3 Xaa4 Y Xaa5 C C Xaa6 G Xaa7 C R Xaa8 Xaa9 R C SEQ ID NO: 1 wherein Xaa1, Xaa3, Xaa4, Xaa6, Xaa7 and Xaa8 are independently selected from serine and threonine; Xaa2 is selected from arginine and lysine; Xaa5 is selected from aspartic acid and glutamic acid; and Xaa9 is selected from glycine, alanine, valine, leucine and isoleucine.
US08765676B2 Calcium sensing receptor modulating compounds and pharmaceutical use thereof
Calcium-sensing receptor (CaSR) modulating substituted cyclopentylene compounds represented in formula I (wherein X is CH or N) and pharmaceutical compositions thereof are useful for treating diseases.
US08765674B2 Methods useful in the treatment of bone resorption diseases
The invention relates to a combined pharmaceutical preparation comprising parathyroid hormone and a bone resorption inhibitor, said preparation being adapted for (a) the administration of parathyroid hormone during a period of approximately 6 to 24 months; (b) after the administration of parathyroid hormone has been terminated, the administration of a bone resorption inhibitor during a period of approximately 12 to 36 months.
US08765673B2 Methods for promoting wound healing and/or reducing scar formation
The present invention provides methods for promoting wound healing and/or reducing scar formation, by administering to an individual in need thereof one or more of the heat shock protein 20-derived polypeptides disclosed herein.
US08765672B2 Method of modulating release of biomolecules having heparin-binding affinity
The present invention relates to a method of modulating a release of biomolecules having heparin-binding affinity, and more specifically, to a method of modulating a release of biomolecules having heparin-binding affinity, using thiolated heparin adsorbed on metal surface. According to the present invention, it is possible to modulate various biomolecules having heparin-binding affinity such as growth factors spatiotemporally by external electrical stimulations, without causing cytotoxicity and having deteriorating effects on cell activity. Thus, the present invention can be applied for various biomedical and biotechnical fields including drug delivery, biosensor, and cell culture.
US08765670B2 GDF3 propeptides and related methods
In certain aspects, the present invention provides compositions and methods for regulating body weight, in particular, for treating obesity and obesity-associate disorders. The present invention also provides methods of screening compounds that modulate activity of GDF3. The compositions and methods provided herein are also useful in treating diseases associated with abnormal activity of GDF3.
US08765669B2 Glycosylated GLP-1 peptide
Oligosaccharide chain added GLP-1 peptides are more stable in blood and more active in controlling blood-sugar levels than GLP-1 peptides without added oligosaccharides. Oligosaccharide chain added GLP-1 peptides having GLP-1 activity include at least one or at least two amino acids each substituted with an oligosaccharide chain added amino acid in GLP-1; a peptide having the amino acid sequence of GLP-1 with deletion, substitution or addition of one or several amino acids; or a GLP-1 analog. Oligosaccharide chain added GLP-1 peptides with at least one amino acid substituted with an oligosaccharide chain added amino acid include an oligosaccharide chain with oligo hyaluronic acid. Oligosaccharide chain added amino acids include oligosaccharide chains attached to amino acids via linkers.
US08765665B2 Albumin-free factor VIII formulations
A Factor VIII composition formulated without albumin, comprising the following formulation excipients in addition to Factor VIII: 4% to 10% of a bulking agent selected from the group consisting of mannitol, glycine and alanine; 1% to 4% of a stabilizing agent selected from the group consisting of sucrose, trehalose, raffinose, and arginine; 1 mM to 5 mM calcium salt; 100 mM to 300 mM NaCl; and a buffering agent for maintaining a pH of approximately between 6 and 8. Alternatively, the formulation can comprise 2% to 6% hydroxyethyl starch; 1% to 4% of a stabilizing agent selected from the group consisting of sucrose, trehalose, raffinose, and arginine; 1 mM to 5 mM calcium salt; 100 mM to 300 mM NaCl; and a buffering agent for maintaining a pH of approximately between 6 and 8. In a further embodiment, the formulation can comprise: 300 mM to 500 mM NaCl; 1% to 4% of a stabilizing agent selected from the group consisting of sucrose, trehalose, raffinose, and arginine; 1 mM to 5 mM calcium salt; and a buffering agent.
US08765662B2 NOGO receptor binding protein
The invention provides Sp35 polypeptides and fusion proteins thereof, Sp35 antibodies and antigen-binding fragments thereof and nucleic acids encoding the same. The invention also provides compositions comprising, and methods for making and using, such Sp35 antibodies, antigen-binding fragments thereof, Sp35 polypeptides and fusion proteins thereof.
US08765655B2 Degreasing all purpose cleaning compositions and methods
This invention encompasses compositions of surfactant-based products containing anionic and nonionic sufactants, one or more sequestering agents, a glycol solvent for the preparation of liquid cleaning compositions. The surfactant-based product may be any type of cleaning product based on surfactants, which include a sequestering agent. Specifically, the invention relates to a cleaning composition with desirable cleansing properties possessing increased grease cutting.
US08765653B2 Formulations and method for post-CMP cleaning
The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant.The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.
US08765652B2 Method of making a formulation for deactivating nucleic acids
The present invention relates to reagents for use in deactivating nucleic acids and methods of making and using the same.
US08765648B2 Dry lubricant for conveying containers
The passage of a container along a conveyor is lubricated by applying to the container or conveyor a mixture of a water-miscible silicone material and a water-miscible lubricant. The mixture can be applied in relatively low amounts, to provide thin, substantially non-dripping lubricating films. In contrast to dilute aqueous lubricants, the lubricants of the invention provide drier lubrication of the conveyors and containers, a cleaner conveyor line and reduced lubricant usage, thereby reducing waste, cleanup and disposal problems.
US08765646B2 High solids content slurries and methods
A slurry and method are disclosed for low damage gravel packing. The slurry comprises a solids mixture comprising a plurality of volume-averaged particle size distribution (PSD) modes such that a packed volume fraction (PVF) exceeds 0.75; a carrier fluid in an amount to provide a solids volume fraction (SVF) less than the PVF of the solids mixture; and a stability additive to inhibit settling of the solids mixture. The method comprises circulating the slurry into a wellbore to deposit the slurry downhole; terminating the slurry circulation for a period of time, wherein the stability additive inhibits settling of the solids mixture; and thereafter circulating the deposited slurry in contact with a surface of a screen. Stability additives disclosed include colloidal particles, hydratable polymer particles, and particles having an aspect ratio above 6.
US08765641B2 Chip production, hybridization and data interpretation for antibody and protein microarrays
An antibody microarray screen including a substrate, monoclonal and polyclonal antibodies that are purified immunoglobins, wherein the antibodies are spotted on predetermined positions on the substrate, and fluids unprocessed for immunoglobulin isolation (e.g., anti-sera, ascites fluids, or hybridoma culture media), wherein the unprocessed fluids are spotted on the predetermined positions on the substrate. Production of drug-metabolizing enzyme antibody microarrays containing closely related cytochromes P450 is disclosed. Methods of manufacturing an antibody microarray, an internal control molecule for use in an antibody microarray, a method of determining optimal spotting concentrations of IgG and a method to increase a detectable signal with microarray analysis are disclosed.
US08765635B2 Absorption cell manufacturing method
A manufacturing method of an absorption cell includes preparing a first absorption layer formed of a mixture of a first absorbent and a second absorbent having a higher density than the first absorbent; coating the surface of the first absorption layer with a protective layer formed of a low-carbonizing point material and the second absorbent so as to prevent generation of dust particles from the first absorption layer; and removing the low-carbonizing point material from the protective layer so as to form a second absorption layer including a plurality of pore parts through which a fluid flows to the first absorption layer.
US08765633B2 Catalyst for production of ethylene oxide and method for production of ethylene oxide
A catalyst for the production of ethylene oxide in high efficiency and high selectivity, as well as stably for a long period of time is provided.A catalyst for the production of ethylene oxide comprising silver and a reaction promoter supported on a porous carrier comprising α-alumina as a main component, characterized in that a relative standard deviation of silver supporting rate of each particle of the catalyst is 0.001 or more and 0.1 or less.
US08765631B2 Cerium oxide-zirconium oxide composite oxide and method for producing the same
The present invention provides a cerium oxide-zirconium oxide based composite oxide that has a large OSC at a low temperature and that has a suitable OSC, and a method for readily producing the composite oxide. Specifically, the present invention provides a cerium oxide-zirconium oxide based composite oxide comprising a mixture of (1) a cerium-zirconium composite oxide from a melting process and (2) cerium dioxide from a wet process, and a method for producing a cerium oxide-zirconium oxide based composite oxide, the method comprising dispersing a cerium-zirconium composite oxide from a melting process in a cerium-containing solution, neutralizing the resulting dispersion; and then performing a heat treatment.
US08765630B2 Catalysts having enhanced stability, efficiency and/or activity for alkylene oxide production
A catalyst for the manufacture of alkylene oxide, for example ethylene oxide, by the vapor-phase epoxidation of alkene containing impregnated silver and at least one efficiency-enhancing promoter on an inert, refractory solid support, said support incorporating a sufficient amount of zirconium component (present and remaining substantially as zirconium silicate) as to enhance at least one of catalyst activity, efficiency and stability as compared to a similar catalyst which does not contain the zirconium component.
US08765629B2 Process for preparing V-Ti-P catalysts for synthesis of 2,3-unsaturated carboxylic acids
The invention relates to a catalyst composition comprising a mixed oxide of vanadium, titanium, and phosphorus. The titanium component is derived from a water-soluble, redox-active organo-titanium compound. The catalyst composition is highly effective at facilitating the vapor-phase condensation of formaldehyde with acetic acid to generate acrylic acid, particularly using an industrially relevant aqueous liquid feed.
US08765628B2 Poison resistant catalyst systems and associated processes
Exemplary embodiments of the present invention relate to the processing of hydrocarbon-containing feedstreams in the presence of an active catalyst component comprising a surface, and a metal oxide film coated on the surface of the active catalyst component. The catalysts and processes of the present invention can improve overall hydrogenation, product conversion, as well as improved resistance to catalytic deactivation due to sulfur and nitrogen compounds present in the hydrocarbon feedstreams.
US08765627B2 Catalyst system, method of manufacture and use
The present invention relates to a catalyst system, to a method of manufacturing this system, and also to uses of this system. The catalyst system of the invention is characterized in that it comprises molecules of a polymer having, at one of its ends or along the chain, one or more polar functional groups; a solvent, said solvent, due to the fact of said polar functional group of said polymer, provoking and maintaining, when said molecules of the polymer are introduced thereinto, an organization of said molecules of the polymer into aggregates, micelles or vesicles so that the polar functional groups of said polymer are located inside the aggregates, micelles or vesicles formed; and a catalyst activator and a catalyst trapped in said aggregates, micelles or vesicles of said polymer. The catalyst system of the present invention may be used, for example, for catalyzing a (co)polymerization of olefins.
US08765625B2 Engine exhaust catalysts containing copper-ceria
An emission control catalyst includes copper-ceria to boost low temperature CO oxidation performance, generate exothermic heat during the process, and reduce HC and NOx emissions. As a result, system performance is boosted at equal catalyst cost or maintained at a reduced catalyst cost. In one embodiment, an engine exhaust catalyst includes a first washcoat layer having at least one of a platinum-based catalyst, a palladium-based catalyst, and combinations thereof; and a second washcoat layer having copper-ceria.
US08765624B2 Coating suspension for coating catalyst substrates
A coating suspension for coating catalyst substrates comprises at least two different particulate metal and/or semi-metal oxides with a sedimentation mass (MS), characterized in that the sedimentation mass (MS) of the particulate metal and/or semi-metal oxide with the smallest sedimentation mass is between 70% and 100% of the sedimentation mass of the particulate metal and/or semi-metal oxide with the largest sedimentation mass. Further, a method for producing a coating suspension, the use of the coating suspension to coat a catalyst substrate, as well as a catalyst produced using the coating suspension are disclosed.
US08765619B2 Glass-ceramic plate
A glass-ceramic plate of lithium aluminosilicate free of arsenic and antimony, the optical transmission of which, for a thickness of 4 mm, is between 0.2 and 4% for at least one wavelength between 400 and 500 nm.
US08765615B1 Quartz-based MEMS resonators and methods of fabricating same
A quart resonator for use in lower frequency applications (typically lower than the higher end of the UHF spectrum) where relatively thick quartz members, having a thickness greater than ten microns, are called for. A method for fabricating same resonator includes providing a first quart substrate; thinning the first quartz substrate to a desired thickness; forming a metallic etch stop on a portion of a first major surface of the first quartz substrate; adhesively attaching the first major surface of the first quartz substrate with the metallic etch stop formed thereon to a second quartz substrate using a temporary adhesive; etching a via though the first quartz substrate to the etch stop; forming a metal electrode on a second major surface of the first quartz substrate, the metal electrode penetrating the via in the first quartz substrate to make ohmic contact with the metallic etch stop; bonding the metal electrode formed on the second major surface of the first quartz substrate to a pad formed on a substrate bearing oscillator drive circuitry to form a bond there between; and dissolving the temporary adhesive to thereby release the second quartz substrate from the substrate bearing oscillator drive circuitry and a portion of the first quartz substrate bonded thereto via the bond formed between the metal electrode formed on the second major surface of the first quartz substrate to and the pad formed on the substrate bearing oscillator drive circuitry.
US08765612B2 Double patterning process
A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.
US08765608B2 Methods for forming trenches
Methods for making a semiconductor device are disclosed. The method includes forming a plurality of gate stacks on a substrate, forming an etch buffer layer on the substrate, forming a dielectric material layer on the etch buffer layer, forming a hard mask layer on the substrate, wherein the hard mask layer includes one opening, and etching the dielectric material layer to form a plurality of trenches using the hard mask layer and the etch buffer layer as an etch mask.
US08765607B2 Active tiling placement for improved latch-up immunity
A semiconductor device includes CMP dummy tiles (36) that are converted to active tiles by forming well regions (42) at a top surface of the dummy tiles, forming silicide (52) on top of the well regions, and forming a metal interconnect structure (72, 82) in contact with the silicided well tie regions for electrically connecting the dummy tiles to a predetermined supply voltage to provide latch-up protection.
US08765606B2 Silicon surface preparation
Methods are provided for producing a pristine hydrogen-terminated silicon wafer surface with high stability against oxidation. The silicon wafer is treated with high purity, heated dilute hydrofluoric acid with anionic surfactant, rinsed in-situ with ultrapure water at room temperature, and dried. Alternatively, the silicon wafer is treated with dilute hydrofluoric acid, rinsed with hydrogen gasified water, and dried. The silicon wafer produced by the method is stable in a normal clean room environment for greater than 3 days and has been demonstrated to last without significant oxide regrowth for greater than 8 days.
US08765605B2 Surface treatment for a fluorocarbon film
A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.
US08765604B2 Interconnection structure for an integrated circuit
The disclosure relates to a method of fabricating an interconnection structure of an integrated circuit, comprising the steps of: forming a first conductive element within a first dielectric layer; depositing a first etch stop layer above the first conductive element and the first dielectric layer; forming an opening in the first etch stop layer above the first conductive element, to form a first connection area; depositing a second dielectric layer above the etch stop layer and above the first conductive element in the connection area; etching the second dielectric layer to form at least one hole which is at least partially aligned with the connection area; and filling the hole with a conductive material to form a second conductive element in electrical contact with the first conductive element.
US08765600B2 Contact structure for reducing gate resistance and method of making the same
A semiconductor device having a gate on a substrate with source/drain (S/D) regions adjacent to the gate. A first dielectric layer overlays the gate and the S/D regions, the first dielectric layer having first contact holes over the S/D regions with first contact plugs formed of a first material and the first contact plugs coupled to respective S/D regions. A second dielectric layer overlays the first dielectric layer and the first contact plugs. A second contact hole formed in the first and second dielectric layers is filled with a second contact plug formed of a second material. The second contact plug is coupled to the gate and interconnect structures formed in the second dielectric layer, the interconnect structures coupled to the first contact plugs. The second material is different from the first material, and the second material has an electrical resistance lower than that of the first material.
US08765598B2 Conductive structures, systems and devices including conductive structures and related methods
Conductive structures include a plurality of conductive steps and a contact extending at least partially therethrough in communication with at least one of the plurality of conductive steps and insulated from at least another one of the conductive steps. Devices may include such conductive structures. Systems may include a semiconductor device and a stair step conductive structure having a plurality of contacts extending through a step of the stair step conductive structure. Methods of forming conductive structures include forming contacts in contact holes formed through at least one conductive step of a conductive structure. Methods of forming electrical connections in stair step conductive structures include forming contacts in contact holes formed through each step of the stair step conductive structure.
US08765596B1 Atomic layer profiling of diffusion barrier and metal seed layers
Material is removed from a substrate surface (e.g., from a bottom portion of a recessed feature on a partially fabricated semiconductor substrate) by subjecting the surface to a plurality of profiling cycles, wherein each profiling cycle includes a net etching operation and a net depositing operation. An etching operation removes a greater amount of material than is being deposited by a depositing operation, thereby resulting in a net material etch-back per profiling cycle. About 2-10 profiling cycles are performed. The profiling cycles are used for removing metal-containing materials, such as diffusion barrier materials, copper line materials, and metal seed materials by PVD deposition and resputter. Profiling with a plurality of cycles removes metal-containing materials without causing microtrenching in an exposed dielectric. Further, overhang is reduced at the openings of the recessed features and sidewall material coverage is improved. Integrated circuit devices having higher reliability are fabricated.
US08765595B2 Thick on-chip high-performance wiring structures
Methods for fabricating a back-end-of-line (BEOL) wiring structure, BEOL wiring structures, and design structures for a BEOL wiring structure. The BEOL wiring may be fabricated by forming a first wire in a dielectric layer and annealing the first wire in an oxygen-free atmosphere. After the first wire is annealed, a second wire is formed in vertical alignment with the first wire. A final passivation layer, which is comprised of an organic material such as polyimide, is formed that covers an entirety of a sidewall of the second wire.
US08765594B2 Method of fabricating semiconductor device allowing smooth bump surface
A method of fabricating a semiconductor device, includes: removing, after forming solder for forming a plurality of bumps on a semiconductor substrate, an oxide film formed on a surface of the solder while heating the semiconductor substrate with first radiant heat; and heating the semiconductor substrate with an amount of second radiant heat that is greater than the amount of the first radiant heat by holding the semiconductor substrate at a position apart from a front surface of a heater stage at a predetermined distance to reflow the solder from which the oxide film is removed.
US08765592B2 Multi-landing contact etching
A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a second die area having the top dielectric, a hard mask, and a gate electrode. The top dielectric layer is etched to form a semiconductor contact while etching at least a portion the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is deposited. A photosensitive material is patterned to generate a third opening in the photosensitive material over the semiconductor contact and a fourth opening inside the gate contact area. The ILD is etched through to reopen the semiconductor contact while etching through the ILD and residual hard mask if present to provide a gate contact to the gate electrode.
US08765588B2 Semiconductor process
A semiconductor process includes the following steps. An interdielectric layer is formed on a substrate and the interdielectric layer has a first recess and a second recess. A metal layer is formed to cover the surface of the interdielectric layer, the first recess and the second recess. Partially fills a sacrificed material into the first recess and the second recess so that a portion of the metal layer in each of the recesses is respectively covered. The uncovered metal layer in each of the recesses is removed. The sacrificed material is removed. An etching process is performed to remove the remaining metal layer in the first recess and reserve the remaining metal layer in the second recess.
US08765587B2 Method of manufacturing non-volatile memory devices
A method of manufacturing non-volatile memory devices includes forming a gate insulating layer and a first conductive layer over a semiconductor substrate, etching the first conductive layer and the gate insulating layer to expose part of the semiconductor substrate, forming trenches at a target depth of the semiconductor substrate by repeatedly performing a dry etch process for etching the exposed semiconductor substrate and a cleaning process for removing residues generated in the dry etch process, forming isolation layers within the trenches, forming a dielectric layer on a surface of the entire structure in which the isolation layers are formed, and forming a second conductive layer on the dielectric layer.
US08765586B2 Methods of forming metal silicide regions on semiconductor devices
Disclosed herein are various methods of forming metal silicide regions on semiconductor devices. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, performing a selective metal silicide formation process to form metal silicide regions in source/drain regions formed in or above the substrate, after forming the metal silicide regions, removing the sacrificial gate structure to define a gate opening and forming a replacement gate structure in the gate opening, the replacement gate structure comprised of at least one metal layer.
US08765585B2 Method of forming a borderless contact structure employing dual etch stop layers
Each gate structure formed on the substrate includes a gate dielectric, a gate conductor, a first etch stop layer, and a gate cap dielectric. A second etch stop layer is formed over the gate structures, gate spacers, and source and drain regions. A first contact-level dielectric layer and a second contact-level dielectric layer are formed over the second etch stop layer. Gate contact via holes extending at least to the top surface of the gate cap dielectrics are formed. Source/drain contact via holes extending to the interface between the first and second contact-level dielectric layers are subsequently formed. The various contact via holes are vertically extended by simultaneously etching exposed gate cap dielectrics and exposed portions of the first contact-level dielectric layer, then by simultaneously etching the first and second etch stop layers. Source/drain contact vias self-aligned to the outer surfaces gate spacers are thereby formed.
US08765583B2 Angled multi-step masking for patterned implantation
An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The mask and substrate are tilted at a first angle relative to the incoming ion beam. After the substrate is exposed to the ion beam, the mask and substrate are tilted at a second angle relative to the ion beam and a subsequent implant step is performed. Through the selection of the aperture size and shape, the cross-section of the mask, the distance between the mask and the substrate and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions.
US08765578B2 Edge protection of bonded wafers during wafer thinning
A method of edge protecting bonded semiconductor wafers. A second semiconductor wafer and a first semiconductor wafer are attached by a bonding layer/interface and the second semiconductor wafer undergoes a thinning process. As a part of the thinning process, a first protective layer is applied to the edges of the second and first semiconductor wafers. A third semiconductor wafer is attached to the second semiconductor wafer by a bonding layer/interface and the third semiconductor wafer undergoes a thinning process. As a part of the thinning process, a second protective layer is applied to the edges of the third semiconductor wafer and over the first protective layer. The first, second and third semiconductor wafers form a wafer stack. The wafer stack is diced into a plurality of 3D chips while maintaining the first and second protective layers.
US08765567B2 Nonvolatile memory elements
Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
US08765563B2 Trench confined epitaxially grown device layer(s)
Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric. In embodiments, non-planar devices CMOS devices having high carrier mobility may be made from the semiconductor device layer.
US08765561B2 Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate; performing a planarizing process to partially remove the contact etch stop layer; partially removing the dummy gate; and performing a thermal treatment on the contact etch stop layer.
US08765557B2 Method for manufacturing silicon carbide semiconductor device
A first layer constituting a first surface of a silicon carbide layer and of a first conductivity type is prepared. An internal trench is formed at a face opposite to the first surface of the first layer. Impurities are implanted such that the conductivity type of the first layer is inverted on the sidewall of the internal trench. By the implantation of impurities, there are formed from the first layer an implantation region located on the sidewall of the internal trench and of a second conductivity type, and a non-implantation region of the first conductivity type. A second layer of the first conductivity type is formed, filling the internal trench, and constituting the first region together with the non-implantation region.
US08765555B2 Phase change memory cells and methods of forming phase change memory cells
A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between.
US08765554B2 Compound semiconductor device and method for manufacturing the same
A gate electrode is formed so as to embed an electrode material in a recess for an electrode, which has been formed in a structure of stacked compound semiconductors, through a gate insulation film, and also a field plate electrode that comes in Schottky contact with the structure of the stacked compound semiconductors is formed by embedding an electrode material in a recess for an electrode, which has been formed in the structure of the stacked compound semiconductors so that the field plate electrode directly comes in contact with the structure of the stacked compound semiconductors at least on the bottom face of the recess for the electrode.
US08765551B2 Non-volatile memory device having vertical structure and method of manufacturing the same
According to an example embodiment, a non-volatile memory device includes a semiconductor layer pattern on a substrate, a plurality of gate patterns and a plurality of interlayer insulating layer patterns that are alternately stacked along a side wall of the semiconductor layer pattern, and a storage structure between the plurality of gate patterns and the semiconductor layer pattern. The semiconductor layer pattern extends in a vertical direction from the substrate. The gate patterns are recessed in a direction from a side wall of the interlayer insulating layer patterns opposing the side wall of the semiconductor layer pattern. A recessed surface of the gate patterns may be formed to be vertical to a surface of the substrate.
US08765549B2 Capacitor for interposers and methods of manufacture thereof
Capacitor designs for substrates, such as interposers, and methods of manufacture thereof are disclosed. In an embodiment, a capacitor is formed between a through via and a lower level metallization layer. The capacitor may be, for example, a planar capacitor formed on the substrate or on a dielectric layer formed over the substrate.
US08765548B2 Capacitors and methods of manufacture thereof
Semiconductor devices, capacitors, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a capacitor includes forming a first material over a workpiece, and patterning the first material, forming a first capacitor plate in a first region of the workpiece and forming a first element in a second region of the workpiece. A second material is formed over the workpiece and over the patterned first material. The second material is patterned, forming a capacitor dielectric and a second capacitor plate in the first region of the workpiece over the first capacitor plate and forming a second element in a third region of the workpiece.
US08765547B2 Area-efficient capacitor using carbon nanotubes
An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the one or more carbon nanotubes from the metal coating.
US08765543B2 Method of making an ultrahigh density vertical NAND memory device with shielding wings
A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first layer and a second layer over a substrate, where the first layer includes a conductive or semiconductor control gate material and the second layer includes an insulating material. The method also includes etching the stack to form at least one opening in the stack, selectively etching the first layer to form first recesses, forming a conductive or semiconductor liner having a clam shape in the first recesses, forming a blocking dielectric over the conductive or semiconductor liner in the first recesses, forming a plurality of discrete charge storage segments separated from each other in the first recesses over the blocking dielectric, forming a tunnel dielectric over a side wall of the discrete charge storage segments exposed in the at least one opening, and forming a semiconductor channel in the opening.
US08765542B1 Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regions
One method disclosed includes forming a gate structure of a transistor above a surface of a semiconducting substrate, forming a sidewall spacer proximate the gate structure, forming a sacrificial layer of material above the protective cap layer, sidewall spacer and substrate, forming an OPL layer above the sacrificial layer, reducing a thickness of the OPL layer such that, after the reduction, an upper surface of the OPL layer is positioned at a level that is below a level of an upper surface of the protective cap layer, performing a first etching process to remove the sacrificial layer from above the protective cap layer to expose the protective cap layer for further processing, performing a second etching process to remove the protective cap layer and performing at least one process operation to remove at least one of the OPL layer or the sacrificial layer from above the surface of the substrate.
US08765541B1 Integrated circuit and a method to optimize strain inducing composites
A method to design an IC is disclosed to provide a uniform deposition of strain-inducing composites is disclosed. The method to design the IC comprises, determining a total strain-inducing deposition area on an IC design. Then, the total strain inducing deposition area is compared with a predefined size. A dummy diffusion area is modified to increase the total strain-inducing deposition area, when the total strain-inducing deposition area is below the predefined size. Finally, the strain-inducing deposition area is optimized. A method to manufacture the IC and the IC is also disclosed.
US08765538B2 Three dimensional semiconductor memory devices and methods of forming the same
Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
US08765537B2 Metal gate fill by optimizing etch in sacrificial gate profile
A high-k metal gate electrode is formed with reduced gate voids. An embodiment includes forming a replaceable gate electrode, for example of amorphous silicon, having a top surface and a bottom surface, the top surface being larger than the bottom surface, removing the replaceable gate electrode, forming a cavity having a top opening larger than a bottom opening, and filling the cavity with metal. The larger top surface may be formed by etching the bottom portion of the amorphous silicon at greater temperature than the top portion, or by doping the top and bottom portions of the amorphous silicon differently such that the bottom has a greater lateral etch rate than the top.
US08765534B2 Method for improved mobility using hybrid orientation technology (HOT) in conjunction with selective epitaxy and related apparatus
A semiconductor apparatus includes a first substrate and a second substrate located over a first portion of the first substrate and separated from the first substrate by a buried layer. The semiconductor apparatus also includes an epitaxial layer located over a second portion of the first substrate and isolated from the second substrate. The semiconductor apparatus further includes a first transistor formed at least partially in the second substrate and a second transistor formed at least partially in or over the epitaxial layer. The second substrate and the epitaxial layer have bulk properties with different electron and hole mobilities. At least one of the transistors is configured to receive one or more signals of at least about 5V. The first substrate could have a first crystalline orientation, and the second substrate could have a second crystalline orientation.
US08765531B2 Method for manufacturing a metal pad structure of a die, a method for manufacturing a bond pad of a chip, a die arrangement and a chip arrangement
A method for manufacturing a metal pad structure of a die is provided, the method including: forming a metal pad between encapsulation material of the die, wherein the metal pad and the encapsulation material are separated from each other by a gap; and forming additional material in the gap to narrow at least a part of the gap.
US08765530B1 Methods of manufacture of top port surface mount silicon condenser microphone packages
The present invention relates to a surface mount package for a silicon condenser microphone and methods for manufacturing the surface mount package. The surface mount package uses a limited number of components which simplifies manufacturing and lowers costs, and features a substrate that performs functions for which multiple components were traditionally required, including providing an interior surface on which the silicon condenser die is mechanically attached, providing an interior surface for making electrical connections between the silicon condenser die and the package, and providing an exterior surface for surface mounting the package to a device's printed circuit board and for making electrical connections between package and the device's printed circuit board.
US08765529B2 Semiconductor device and method for manufacturing the same
A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a sealing resin, through which the connection electrode passes, for sealing the semiconductor chip.
US08765528B2 Underfill process and materials for singulated heat spreader stiffener for thin core panel processing
A method of making a microelectronic package, and a microelectronic package made according to the method. The method includes: bonding and thermally coupling a plurality of IC dies to an IHS panel to yield a die-carrying IHS panel, and mounting the die-carrying IHS panel onto a substrate panel including a plurality of package substrates by mounting perimeter ribs of the IHS panel to a corresponding pattern of sealant on the substrate panel and by mounting each of the plurality of dies to a corresponding one of the plurality of package substrates to yield a combination including the die-carrying IHS panel mounted to the substrate panel. Other embodiments are also disclosed and claimed.
US08765527B1 Semiconductor device with redistributed contacts
A method of assembling Redistributed Chip Package (RCP) semiconductor devices. An active die structure is encapsulated in a molding compound with internal electrical contacts of the active die structure positioned at an active face of an encapsulation layer. A dummy die structure is positioned at a back face of the encapsulation layer. A redistribution layer is formed at an active face of the encapsulation layer. The redistribution layer includes a layer of insulating material and redistribution electrical interconnections. The insulating material is built up with grooves along saw streets. External electrical contacts exposed at a surface of the redistribution layer are connected with the redistribution electrical interconnections. The dummy die structure is removed and then the semiconductor devices are singulated.
US08765525B2 Method of manufacturing an integrated circuit packaging system including lasering through encapsulant over interposer
A method of manufacture of an integrated packaging system includes: providing a substrate; mounting an integrated circuit on the substrate; mounting an interposer substrate having an interposer pad on the integrated circuit; covering an encapsulant over the integrated circuit and the interposer substrate; forming a hole through the encapsulant aligned over the interposer pad; and placing a conductive connector on and in direct contact with the interposer pad.
US08765521B2 Variable resistance memory devices and methods of manufacturing the same
According to example embodiments, a variable resistance memory device include an ohmic pattern on a substrate; a first electrode pattern including a first portion that has a plate shape and contacts a top surface of the ohmic pattern and a second portion that extends from one end of the first portion to a top; a variable resistance pattern electrically connected to the first electrode pattern; and a second electrode pattern electrically connected to the variable resistance pattern, wherein one end of the ohmic pattern and the other end of the first portion are disposed on the same plane.
US08765520B2 Methods of manufacturing photovoltaic electrodes
A photovoltaic electrode is made by the following steps: (a) depositing on a substrate a dispersion comprising powdered semiconductor particles in a dispersion medium; (b) removing the majority of the dispersion medium to leave the powdered semiconductor particles in a deposition layer on the substrate; (c) creating a plasma using microwave energy excitation; (d) exposing the deposition layer to said microwave-excited plasma for a sufficient time to sinter the nanoparticles thereby adhering them to the substrate; and (e) absorbing a dye into said sintered deposition layer. The electrode thus obtained exhibits improved performance relative to conventional sintered electrodes.
US08765518B1 Chalcogenide solutions
Improved chalcogenide solutions are provided. In one aspect, a method of forming an aqueous selenium-containing solution is provided. The method includes the following step. Water, ammonium hydroxide, elemental selenium, and elemental aluminum are contacted under conditions sufficient to form the aqueous selenium-containing solution. The conditions may include sonication for a period of time of from about 1 minute to about 10 minutes and/or stirring for a period of time of from about 10 minutes to about 72 hours at a temperature of from about 20° C. to about 25° C. A method of fabricating a photovoltaic device is also provided.
US08765517B2 Image sensors including hydrophobic interfaces and methods of fabricating the same
A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
US08765513B2 Solar cell and method of manufacturing the same
Provided are a solar cell and a method of manufacturing the same. The method includes: preparing a bottom substrate including sequentially stacked first and second portions, each of the first and second portions including a plurality of grains, wherein the maximum grain size of the second portion is less than the minimum grains size of the first portion; exposing the first portion of the bottom substrate by removing the second portion of the bottom substrate; and forming a photovoltaic conversion layer on the first portion of the bottom substrate.
US08765505B2 Multi-luminous element and method for manufacturing same
The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.
US08765497B2 Packaging and function tests for package-on-package and system-in-package structures
A method includes placing a plurality of bottom units onto a jig, wherein the plurality of bottom units is not sawed apart and forms an integrated component. Each of the plurality of bottom units includes a package substrate and a die bonded to the package substrate. A plurality of upper component stacks is placed onto the plurality of bottom units, wherein solder balls are located between the plurality of upper component and the plurality of bottom units. A reflow is performed to join the plurality of upper component stacks with respective ones of the plurality of bottom units through the solder balls.
US08765495B1 Method of forming pattern of doped region
A method of forming a pattern of doped region includes the following steps. At first, a device layout pattern including a gate layout pattern and a doped region layout pattern is provided to a computer system. Subsequently, the device layout pattern is split into a plurality of sub regions, and the sub regions have different pattern densities of the gate layout pattern. Then, at least an optical proximity correction (OPC) calculation is respectively performed on the doped region layout pattern in each of the sub regions to respectively form a corrected sub doped region layout pattern in each of the sub regions. Afterwards, the corrected sub doped region layout patterns are combined to form a corrected doped region layout pattern, and the corrected doped region layout pattern is outputted onto a mask through the computer system.
US08765484B2 Optically encoded particles
The invention concerns a particle having a code embedded in its physical structure by refractive index changes between different regions of the particle. In preferred embodiments, a thin film possesses porosity that varies in a manner to produce a code detectable in the reflectivity spectrum.
US08765483B2 Explosives detection substrate and methods of using the same
Provided herein are explosives detection substrates which include an electrospun (electro)sprayed and/or dry spun aromatic polymer, such as polystyrene, and a small molecule fluorophore. Methods for detecting an explosive material using such substrates are also provided.
US08765482B2 Method and apparatus for lighted test strip
A test strip with a sample chamber is secured to a meter. The sample chamber in the portion of the test strip that extends out of the meter is illuminated by transmitting light from a light source inside the meter internally through the test strip towards the sample chamber. By way of analogy, the test strip acts in a fashion similar to a fiber optic cable or optical wave guide by transmitting the light from the meter to the remotely located sample chamber that extends outside the meter. The user is then able to easily see the sample chamber of the test strip in dark conditions so that the user is able to readily align the sample chamber with the drop of fluid on the skin as well as view the sample chamber in order to ensure proper filling. The light also illuminates a test strip slot into which the test strip is inserted.
US08765480B2 Method for recovering metal and kit for recovery of metal for use in the same
A method for recovering a metal, capable of recovering a metal easily without requiring the use of an organic medium, is provided. A first complex between a first chelating agent and a metal present in a sample is formed in a first mixture prepared by mixing the first chelating agent and the sample. Then, the first complex is recovered from the first mixture, and a second complex between the metal derived from the first complex and a second chelating agent is formed in a second mixture prepared by mixing the first complex and an aqueous solution of the second chelating agent. The aqueous solution is under the pH conditions where the first chelating agent can be insoluble in the aqueous solution. Then, a liquid fraction containing the second complex is recovered from the second mixture. Thus, the metal can be recovered.
US08765479B1 Methods for determining the risk of coronary heart disease and clinical manifestations of coronary heart disease
The present disclosure provides methods to predict the risk of CHD and/or clinical manifestations of CHD in a subject. In one embodiment, the method involves measuring the levels or concentration of apo A1, a subclass of HDL, HDL3, or a combination of the foregoing. The methods of the present disclosure are particularly useful when the subject has reached target levels of one or more lipoproteins, such as, but not limited to, LDL or HDL or subclass of the foregoing.
US08765470B2 Reprogramming immortalized B-cells to induced pluripotent stem cells
Methods and composition for providing induced pluripotent stem (iPS) cells are provided. For example, in certain aspects methods including reprogramming B lymphocytes transformed by episomal vectors such as Epstein-Barr virus-based vectors are described. Furthermore, the invention provides induced pluripotent stem cells essentially free of exogenous elements and having B cell immunoglobin variable region rearrangement.
US08765462B2 IL-12 immunotherapy for cancer
Compositions and methods for delivering immune modulatory molecules to result in a therapeutic effect are disclosed. The compositions and methods use stably integrating lentiviral delivery systems. The methods are useful for therapeutically and prophylactically treating cancer such as leukemia.
US08765461B2 HIV antisense proteins
Disclosed is a novel HIV gene comprising a set of open reading frames encoded with the template as the plus strand of the proviral DNA, and located in the region of HIV-1 long terminal repeat. The genes encode a set of antisense proteins, (HAPs) as well as smaller proteins, related to, and containing structural motif resembling that of chemokine proteins. Depending upon the ribosomal frameshift, a plurality of proteins may be translated from the antisense RNA. The smaller proteins have similarity with chemokine SDF-1 and may play a role as a cofactor with gp120 in the binding to and entry of HIV to a target cell.
US08765460B2 Photobioreactor system for mass production of microorganisms
A photobioreactor system for mass production of microorganisms is disclosed. Water with microorganisms suspended therein is sprayed through a nozzle to create droplets. These droplets have a high surface area to volume ratio enabling efficient light transfer and gas diffusion. The water may also be passed through channels between two transparent plates, wherein superior mixing is achieved along with a high surface to volume ratio. The water is preferably circulated through a dark holding tank Active and passive flashing lights of different wavelengths are used to promote growth of the microorganisms when the water is sprayed and/or passing through the transparent plates.
US08765459B2 Apparatus and methods for manipulation and optimization of biological systems
The invention provides systems and methods for manipulating biological systems, for example to elicit a more desired biological response from a biological sample, such as a tissue, organ, and/or a cell. In one aspect, the invention operates by efficiently searching through a large parametric space of stimuli and system parameters to manipulate, control, and optimize the response of biological samples sustained in the system. In one aspect, the systems and methods of the invention use at least one optimization algorithm to modify the actuator's control inputs for stimulation, responsive to the sensor's output of response signals. The invention can be used, e.g., to optimize any biological system, e.g., bioreactors for proteins, and the like, small molecules, polysaccharides, lipids, and the like. Another use of the apparatus and methods includes is for the discovery of key parameters in complex biological systems.
US08765454B2 Fluidic devices and methods for multiplex chemical and biochemical reactions
The present invention describes microfluidic devices that provide novel fluidic structures to facilitate the separation of fluids into isolated, pico-liter sized compartments for performing multiplexing chemical and biological reactions. Applications of the novel devices including biomolecule synthesis, polynucleotide amplification, and binding assays are also disclosed.
US08765452B1 Flow tube reactor
Devices, systems and methods for increasing fermentation rates of microbes via biostimulation are provided. Electrodes are preferably positioned along an interior or exterior of a tube-shaped component to administer electromagnetic/electric pulses to a solution comprising a microbe. Systems can advantageously be used in new biofuels production plants, or in existing biofuels production plants without the need for significant retrofits.
US08765450B2 Compositions and methods for waste remediation
The present invention relates to compositions and methods for the bioremediation of hydrocarbon-containing waste, such as drill mud and drill cuttings from oil and gas wellbores, drill waste deposit sites, oil spills, oil and gas production waste, and contaminated surfaces, using wood chips comprising microorganisms of mountain pine beetle.
US08765449B2 Three stage, multiple phase anaerobic digestion system and method
A three stage, multiple phase anaerobic digestion system and method designed to separate the biological phases, optimize microbial activity in each phase, and significantly increase system reliability and energy production. The system physically separates the biological phases of anaerobic digestion based on particle size, particle density, and solubility of metabolic products. The system allows a complex multi-phased biological system to develop without the need for excessive control or operator intervention.
US08765437B2 Manufacture of active highly phosphorylated human N-acetylgalactosamine-6-sulfatase and uses thereof
This invention provides compositions of active highly phosphorylated human N-acetylgalactosamine-6-sulfatase (GALNS), and pharmaceutical compositions and formulations thereof, methods of producing and purifying GALNS, and its use in the diagnosis, prophylaxis, or treatment of diseases and conditions, including particularly lysosomal storage diseases that are caused by, or associated with, a deficiency in the GALNS enzyme, e.g., Mucopolysaccharidosis IVa (MPS IVa or Morquio A syndrome).
US08765435B2 DNA polymerases with increased 3′-mismatch discrimination
Disclosed are mutant DNA polymerases having increased 3′-mismatch discrimination relative to a corresponding, unmodified polymerase. The mutant polymerases are useful in a variety of disclosed primer extension methods. Also disclosed are related compositions, including recombinant nucleic acids, vectors, and host cells, which are useful, e.g., for production of the mutant DNA polymerases.
US08765434B2 Polynucleotide encoding a maltotriosyl transferase
The object is to provide a novel glycosyltransferase and the use thereof, the glycosyltransferase catalyzes transglucosylation of maltotriose units under conditions which can be employed for the processing of foods or the like. Provided is a maltotriosyl transferase which acts on polysaccharides and oligosaccharides having α-1,4 glucoside bonds, and has activity for transferring maltotriose units to saccharides, the maltotriosyl transferase acting on maltotetraose as substrate to give a ratio between the maltoheptaose production rate and maltotriose production rate of 9:1 to 10:0 at any substrate concentration ranging from 0.67 to 70% (w/v).
US08765431B2 Method for enzymatic production of decarboxylated polyketides and fatty acids
Disclosed herein are methods of preparing alkenes from beta-hydroxy or beta-sulfate carboxylic acid or carboxylic acid derivatives using thioesterase and optionally a sulfotransferase.
US08765428B2 Flow-through biological conversion of lignocellulosic biomass
The present invention is directed to a process for biologically converting carbohydrates from lignocellulosic biomass comprising the steps of: suspending lignocellulosic biomass in a flow-through reactor, passing a reaction solution into the reactor, wherein the solution is absorbed into the biomass substrate and at least a portion of the solution migrates through said biomass substrate to a liquid reservoir, recirculating the reaction solution in the liquid reservoir at least once to be absorbed into and migrate through the biomass substrate again. The biological converting of the may involve hydrolyzing cellulose, hemicellulose, or a combination thereof to form oligosaccharides, monomelic sugars, or a combination thereof; fermenting oligosaccharides, monomelic sugars, or a combination thereof to produce ethanol, or a combination thereof. The process can further comprise removing the reaction solution and processing the solution to separate the ethanol produced from non-fermented solids.
US08765422B2 D4 desaturases and D5 elongases
Disclosed are methods and compositions related to ONC-T18, D4-desaturases, D5 elongases, their isolation, characterization, production, identification, and use for fatty acid production, as well as organisms containing these compositions and organisms expressing them.
US08765421B2 Method for producing coenzyme Q10 by fermentation using stock culture from solid phase fermentation
A method for producing coenzyme Q10 by using stock culture from solid phase fermentation. The strain used in this method is Rhodobacter sphaeroides. Strain passaging is carried out by culturing in a slant medium. After steam cooking and air drying, solid medium is subpackaged and sterilized, wherein said solid medium includes solid components and liquid components. The fresh culture of Rhodobacter sphaeroides on the slant medium is added with sterile water, and the resultant bacterial suspension is added into the solid medium, cultured and used as stock culture for primary fermentation. The method of the present invention can enhance the fermentation level of coenzyme Q10, reduce the cascades of fermentation, shorten production cycle, simplify production processes, and lower production cost.
US08765418B2 Detection of HPV
The present invention provides compositions and methods for the detection and characterization of HPV sequences. More particularly, the present invention provides compositions, methods and kits for using invasive cleavage structure assays (e.g. the INVADER assay) to screen nucleic acid samples, e.g., from patients, for the presence of any one of a collection of HPV sequences. The present invention also provides compositions, methods and kits for screening sets of HPV sequences in a single reaction container.
US08765415B2 Methods for enhanced protein production
The present invention provides a method of increasing protein production in a cell culture by growing cells that produce the protein (e.g., the growth phase) in a perfusion cell culture to a high cell density (i.e., at least above about 40×106 cells/N mL) and then switching to a protein production phase, wherein the cells are cultured in a fed-batch cell culture. The present invention further provides a method for clarifying a protein from a cell culture by adjusting the pH of the cell culture to below neutral pH (i.e., below a pH of 7) and settling the cell culture, such that the cell culture separates to form a supernatant layer and a cell-bed layer, wherein the protein is in the supernatant layer.
US08765413B2 Cell cultivation process
This invention relates to a cell culture process for the production of polypeptides in mammalian CHO cells characterized by one or more temperature and pH shifts which are adjusted in respect to their timing and step size to reduce cell death, increase product yield and improve product quality.
US08765412B2 Method for making multispecific antibodies having heteromultimeric and common components
The invention relates to a method of preparing heteromultimeric polypeptides such as bispecific antibodies, bispecific immunoadhesins and antibody-immunoadhesin chimeras. The invention also relates to the heteromultimers prepared using the method. Generally, the method provides a multispecific antibody having a common light chain associated with each heteromeric polypeptide having an antibody binding domain. Additionally the method further involves introducing into the multispecific antibody a specific and complementary interaction at the interface of a first polypeptide and the interface of a second polypeptide, so as to promote heteromultimer formation and hinder homomultimer formation; and/or a free thiol-containing residue at the interface of a first polypeptide and a corresponding free thiol-containing residue in the interface of a second polypeptide, such that a non-naturally occurring disulfide bond is formed between the first and second polypeptide. The method allows for the enhanced formation of the desired heteromultimer relative to undesired heteromultimers and homomultimers.
US08765407B2 L-amino acid producing bacterium and method of producing L-amino acid
An L-amino acid is produced by culturing an L-amino acid-producing bacterium which belongs to the Enterobacteriaceae family and which has been modified so that the activity of an iron transporter is increased by enhancing expression of one or more genes of the following genes: tonB gene, fepA gene, and fecA.
US08765405B2 Method for producing sugar liquid
A sugar liquid containing only very small amounts of fermentation-inhibiting substances is produced by a method for producing a sugar liquid using a cellulose-containing biomass as a raw material, the method including: (1) a step of hydrolyzing a cellulose-containing biomass to produce an aqueous sugar solution; and (2) a step of filtering the obtained aqueous sugar solution through a nanofiltration membrane and/or reverse osmosis membrane to collect a purified sugar liquid from the feed side, while removing fermentation-inhibiting substances from the permeate side.
US08765404B2 Microbial engineering for the production of fatty acids and fatty acid derivatives
Some aspects of this invention relate to methods useful for the conversion of a carbon source to a biofuel or biofuel precursor using engineered microbes. Some aspects of this invention relate to the discovery of a key regulator of lipid metabolism in microbes. Some aspects of this invention relate to engineered microbes for biofuel or biofuel precursor production.
US08765402B2 Copolymer containing 3-hydroxyalkanoate unit and lactate unit, and its manufacturing method
The present invention relates to a copolymer comprising 3-hydroxyalkanoate monomer unit and lactate monomer unit, or their preparing method. More specifically, the present invention relates to a method for preparing a copolymer comprising lactate monomer and 3-hydroxyalkanoate monomer, wherein the method comprises culturing a cell or plant comprising the gene of enzyme converting lactate and 3-hydroxyalkanoate into lactyl-CoA and 3-hydroxyalkanoyl-CoA, respectively, and polyhydroxyalkanoate synthase gene together, and the copolymer made by the method. The copolymer of the present invention is a biodegradable polymer being able to be usefully used instead of conventional synthetic plastic, and the copolymer can be used also for medical use.
US08765401B2 Method and apparatus for producing histological sections with a microtome
A method and apparatus for producing histological sections by means of a microtome are suggested. A histological section of predefined thickness is produced with a microtome from a block comprising a tissue sample. A carrier material is applied with an application apparatus onto the block prior to before production of the histological section. To ensure that the histological sections do not roll up, and to enable improved downline processing of the histological sections as compared with a carrier material embodied in the form of an endless strip and that the carrier material is cut out prior to application to a size and/or a shape that corresponds substantially to the cross-sectional area of the block; and that the cut-out carrier material is then applied onto the block. The suggested apparatus is designed to apply the carrier material onto a histological section to be prepared by a microtome.
US08765399B2 Cultures and protocols for diagnosis of toxigenic Clostridium difficile
Disclosed are culture media, protocols and kits for diagnosis of toxigenic Clostridium difficile, where the culture medium comprises Cooked Meat Medium with glucose; yeast extract; taurocholate; cycloserine; and cefoxitin.
US08765395B2 Method and medium for detecting the presence or absence of methicillin resistant Staphylococcus aureus in a first generation biological test sample
A presence/absence test for Staphylococcus aureus (S. aureus) involves placing a first generation test sample in a solution that will clot in the presence of S. aureus. The solution contains components that will selectively grow S. aureus and also contains clotting factors that will react with S. aureus, if S. aureus is present in the sample, to clot the solution. Examples of specimen samples that can be tested include nasal swabs and lesion swabs, among others. The test can also be modified to detect the presence or absence of methicillin resistant S. Aureus (MRSA).
US08765393B2 Endotoxin-binding ligands and their use
An affinity ligand-matrix conjugate of the structure Z-Spacer-[NX-A]m-NY-A-NK2 is useful for the isolation, separation, purification, characterization, identification or quantification of endotoxins in an aqueous system, wherein m is an integer of at least one; each A independently represents an optionally substituted linear, branched or cyclic saturated hydrocarbon chain containing 1 to 6 carbon atoms; each X independently represents hydrogen or alkyl; Y is X or A-NX2; and Z is a support matrix attached to the ligand through an optional spacer arm (Spacer).
US08765392B2 Methods for diagnosis of myelodysplastic syndromes (MDS)
The present invention relates to methods and kits for diagnosing, ascertaining the clinical course of myelodysplastic syndrome (MDS) and ascertaining response to a therapy regimen of myelodysplastic syndrome. Specifically the invention provides methods and kits useful in the diagnosis and determination of clinical parameters associated with MDS based on surface markers unique to MDS.
US08765388B2 VHZ for diagnosis and treatment of cancer
We provide VHZ for use in a method of treatment, prophylaxis or alleviation of a cancer, such as breast cancer, in an individual. We provide an anti-VHZ agent for the treatment, prophylaxis or alleviation of cancer. We further provide a kit for detecting breast cancer in an individual or susceptibility of the individual to breast cancer comprising means for detection of VHZ expression in the individual or a sample taken from him or her as well as a method of detecting a cancer cell, the method comprising detecting modulation of expression, amount or activity of VHZ in the cell.
US08765387B2 Method of diagnosing Sjogren's disease
Provided are methods and compositions for determining whether an individual has Sjögren's disease (SD). The method entails determining in a biological sample from the individual the presence of antibodies directed to salivary gland protein 1 (SP-I), parotid secretory protein (PSP), carbonic anhydrase 6 (C A6), or determining a combination of the antibodies. Determining that the individual has SD is based on the presence of the antibodies. The method provides for detection of early SD. Kits for antibody detection containing the antigens to which the antibodies of SD patients are directed are also provided.
US08765386B2 Oral fluid rapid assay for hepatitis C virus (HCV) antibodies using non-antibody labeling of IgA molecules recognizing HCV peptide epitopes
A method and device to detect Hepatitis C (HCV) antibodies in oral fluid is provided. This method introduces a non-antibody detection molecule that labels all classes of patient antibodies in oral fluid, followed by the specific concentration of labeled anti-HCV antibodies by selective capture in a trapping zone consisting of peptide antigens derived from the HCV genome. Signal generated by the labeled antibodies present in the trapping zone is proportional to the number of anti-HCV antibodies bound to the antigens present in the trapping zone. Presence of signal derived from the capture of antibody/detection molecule complexes in the trapping zone is indicative of past exposure to HCV.
US08765383B2 Methods of predicting cancer risk using gene expression in premalignant tissue
The present disclosure provides methods for assessing a patient's cancer risk and/or recurrence risk, which methods comprise assaying, in a biological sample obtained from the gastrointestinal (GI) tract of the patient, an expression level of a risk gene. The present disclosure also provides methods involving a cancer risk/recurrence risk sequence, i.e. the V600E mutation of the BRAF gene, which is useful for assessing cancer risk and/or recurrence risk in a patient.
US08765382B2 Genome sequence analysis using tagged amplicons
The invention provides methods and kits for ordering sequence information derived from one or more target polynucleotides. In one aspect, one or more tiers or levels of fragmentation and aliquoting are generated, after which sequence information is obtained from fragments in a final level or tier. Each fragment in such final tier is from a particular aliquot, which, in turn, is from a particular aliquot of a prior tier, and so on. For every fragment of an aliquot in the final tier, the aliquots from which it was derived at every prior tier is known, or can be discerned. Thus, identical sequences from overlapping fragments from different aliquots can be distinguished and grouped as being derived from the same or different fragments from prior tiers. When the fragments in the final tier are sequenced, overlapping sequence regions of fragments in different aliquots are used to register the fragments so that non-overlapping regions are ordered. In one aspect, this process is carried out in a hierarchical fashion until the one or more target polynucleotides are characterized, e.g. by their nucleic acid sequences, or by an ordering of sequence segments, or by an ordering of single nucleotide polymorphisms (SNPs), or the like.
US08765381B2 Method for pairwise sequencing of target polynucleotides
The invention relates to methods for pairwise sequencing of a double-stranded polynucleotide template, which methods result in the sequential determination of nucleotide sequences in two distinct and separate regions of the polynucleotide template. Using the methods of the invention it is possible to obtain two linked or paired reads of sequence information from each double-stranded template on a clustered array, rather than just a single sequencing read from one strand of the template.
US08765379B2 Nucleic acid sequence analysis from combined mixtures of amplified fragments
The invention provides methods and kits for ordering sequence information derived from one or more target polynucleotides. In one aspect, one or more tiers or levels of fragmentation and aliquoting are generated, after which sequence information is obtained from fragments in a final level or tier. Each fragment in such final tier is from a particular aliquot, which, in turn, is from a particular aliquot of a prior tier, and so on. For every fragment of an aliquot in the final tier, the aliquots from which it was derived at every prior tier is known, or can be discerned. Thus, identical sequences from overlapping fragments from different aliquots can be distinguished and grouped as being derived from the same or different fragments from prior tiers. When the fragments in the final tier are sequenced, overlapping sequence regions of fragments in different aliquots are used to register the fragments so that non-overlapping regions are ordered. In one aspect, this process is carried out in a hierarchical fashion until the one or more target polynucleotides are characterized, e.g. by their nucleic acid sequences, or by an ordering of sequence segments, or by an ordering of single nucleotide polymorphisms (SNPs), or the like.
US08765378B2 Method and kit for determination of thymidine kinase activity and use thereof
A method and assay kit for determination of thymidine kinase (TK) activity in a biological sample, such as blood, serum, plasma, Cerebral Spinal Fluid (CSF), pleural fluid, ascites, tissues, cells and extracts thereof, is described. The method comprises contacting, in a buffer, a Basic Reaction Mixture comprising: solid surface-attached primer and/or template, a modified deoxy nucleoside, such as BromodeoxyUridine, IododeoxyUridine, Fluorodeoxy-Uridine or VinyldexoyThymidine as a kinase enzyme substrate, a phosphate donor, a nucleotide polymerizing enzyme, and a kinase enzyme source devoid of TK activity, such as a yeast extract, with the biological sample. After incubation the amount of modified deoxy nucleoside that has been incorporated into the solid surface-attached primer and/or template, is determined and the TK activity present in the biological sample is directly proportional to the amount of incorporated modified deoxy nucleoside. The method and assay kit are useful in the diagnosing, prognosis monitoring of disease progression and treatment effects of cell-proliferation disorders or diseases, such as cancer, and in the screening of compounds, e.g. new drug candidates, affecting enzymatic pathways, which may obstruct the formation of thymidine phosphates or interfere with nucleic acid synthesis.
US08765375B2 Method for sequencing polynucleotides by forming separate fragment mixtures
The invention provides methods and kits for ordering sequence information derived from one or more target polynucleotides. In one aspect, one or more tiers or levels of fragmentation and aliquoting are generated, after which sequence information is obtained from fragments in a final level or tier. Each fragment in such final tier is from a particular aliquot, which, in turn, is from a particular aliquot of a prior tier, and so on. For every fragment of an aliquot in the final tier, the aliquots from which it was derived at every prior tier is known, or can be discerned. Thus, identical sequences from overlapping fragments from different aliquots can be distinguished and grouped as being derived from the same or different fragments from prior tiers. When the fragments in the final tier are sequenced, overlapping sequence regions of fragments in different aliquots are used to register the fragments so that non-overlapping regions are ordered. In one aspect, this process is carried out in a hierarchical fashion until the one or more target polynucleotides are characterized, e.g. by their nucleic acid sequences, or by an ordering of sequence segments, or by an ordering of single nucleotide polymorphisms (SNPs), or the like.
US08765371B2 Method for the in vitro detection and differentiation of pathophysiological conditions
The invention relates to a method for the in vitro detection and/or differentiation and/or progress observation of pathophysiological conditions with the aid of sample nucleic acids, including determination of gene activities by means of a plurality of polynucleotides, determination of gene activities of at least one internal reference gene, and formation of an index value from the single determined normalized gene activities of a multigene biomarker indicating the pathophysiological condition.
US08765368B2 Cancer risk biomarker
The present disclosure relates to methods and compositions for identifying biomarkers that indicate a biological state, in particular cancer or predisposition to cancer. Also provided are methods and compositions for identifying a greater risk for a cancer-related condition in an subject.
US08765366B2 Clinical correlates
A method of assessing an intracellular pathogen infection and/or monitoring an intracellular pathogen infection in an individual comprises determining whether the individual has (a) T-cells that secrete IFN-γ only, (b) T-cells that secrete IL-2 only or (c) T-cells that secrete both IFN-γ and IL-2 in response to an intracellular pathogen antigen and optionally determining any change in this cytokine profile.
US08765365B2 Sperm cell separation system
A sperm cell process system providing to generate sperm cell insemination samples having controlled sperm cell fertility characteristics of sperm cells.
US08765364B2 Ex vivo methods for validating substance testing with human organs and/or tissues
Methods of validating results of assessments of test substances using human-derived tissues and/or organs, particularly tissues and/or organs unsuitable for transplantation, include assessing the suitability of the organ and/or tissue for substance testing, as well as inter-organ variability and use of exogenous and/or endogenous controls.
US08765363B2 Method of forming a resist pattern with multiple post exposure baking steps
A method of forming a integrated circuit pattern. The method includes coating a photoresist layer on a substrate; performing a lithography exposure process to the photoresist layer; performing a multiple-step post-exposure-baking (PEB) process to the photoresist layer; and developing the photoresist layer to form a patterned photoresist layer.
US08765362B2 Patterning method
According to one embodiment, a patterning method includes exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images.
US08765361B2 Reticle and manufacturing method of solid-state image sensor
A reticle includes a repetition pattern and a peripheral pattern, one of which has a first side in a first direction and the other a second side in the first direction. The first side has a first length that is n times the second length of the second side, where n is an integer equal to or larger than 1. The first pattern has at least one of first misalignment measurement patterns provided at positions distant by a third length and ((the third length)+(n−1).times.(the second length)) from an upper end of the first pattern. The third length is equal to or smaller than the second length. The second pattern has a second misalignment measurement pattern provided at a position distant by the third length from an upper end of the second pattern.
US08765355B2 Radiation sensitive resin composition, method for forming a pattern, polymer and compound
A radiation sensitive resin composition includes a first polymer having a group represented by a following formula (1), and a radiation sensitive acid generator. n is an integer of 2 to 4. X represents a single bond or a bivalent organic group. A represents a (n+1) valent linking group. Each Q independently represents a group that includes an alkali-dissociable group.
US08765353B2 Resist composition and method for producing semiconductor device
A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent.
US08765352B2 Resist composition, method of forming resist pattern, novel compound, and acid generator
A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the acid-generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below (wherein Z+ represents an organic cation).
US08765349B2 Method of manufacturing toner, apparatus for manufacturing toner, and method of manufacturing resin particles
A method of manufacturing toner is provided. In the method, toner constituents are dissolved or dispersed in an organic solvent to prepare a toner constituents liquid. The toner constituents liquid is degassed so that the toner constituents liquid includes dissolved oxygen in an amount of 3 mg/L or less. The toner constituents liquid is vibrated in a chamber having at least one nozzle to form a liquid column resonance standing wave in the toner constituents liquid. The toner constituents liquid is discharged from the nozzle disposed within an area including an antinode of the liquid column resonance standing wave to form the toner constituents liquid into liquid droplets. The liquid droplets are dried to solidify the liquid droplets into solid particles.
US08765346B2 Magnetic single-component developer
A magnetic single-component developer includes a spherical toner containing at least a magnetic powder and not containing a release agent in a binder resin, and a nonspherical toner containing at least a magnetic powder and a release agent in a binder resin. According to measurements taken from a scanning electron microscope image taken from 100 toner particles in the magnetic single-component developer, the spherical toner has a circularity of 0.980 or more, the nonspherical toner has a circularity of 0.960 or less, and a particle number ratio (A)/(B) of the number (A) of particles of the spherical toner to the number (B) of particles of the nonspherical toner is 3/7 or more and 5/5 or less.
US08765345B2 Sustainable toners
Disclosed is a polyester resin containing the polycondensation product of (a) at least one diacid, acid ester, or diester, and (b) at least two diols. The at least two diols include a disproportionated rosin diol and 2,2-bis(4-hydroxyphenyl)propane. Also disclosed is a toner composition having particles which include the disclosed polyester resin. Further disclosed is a method of preparing the disclosed polyester resin, and a method of forming toner particles that includes the disclosed polyester resin.
US08765343B2 Electrostatic latent image developing toner, electrostatic latent image developing toner manufacturing method, toner cartridge, image forming method, and image forming apparatus
An electrostatic latent image developing toner contains a binder resin, a colorant, europium, and bismuth.
US08765337B2 Multilayer type electrophotographic photoconductor and image forming apparatus
The present invention is to provide a multilayer type electrophotographic photoconductor capable of stably obtaining a high image quality image over a long term by restraining the exposure memory and the photo memory, and an image forming apparatus comprising such a multilayer type electrophotographic photoconductor. A multilayer type electrophotographic photoconductor comprising a charge generating layer containing at least a charge generating agent on a base member directly or via an intermediate layer, and a charge transporting layer containing at least a charge transporting agent and a binder resin formed successively, wherein the light absorption degree at a 680 nm wavelength light beam in the photoconductive layer of the multilayer type electrophotographic photoconductor is of a value of 0.8 or less, and the light absorption degree at a 450 nm wavelength light beam is of a value of 1.0 or more, and an image forming apparatus comprising such a multilayer type electrophotographic photoconductor are provided.
US08765332B2 Green curable composition, color filter and method of producing same
The invention provides a green curable composition including a colorant in an amount of 47.5% by mass or more with respect to the total solid content of the green curable composition, the colorant containing a halogenated copper phthalocyanine pigment and a barbituric acid derivative yellow pigment at a ratio of from 6/4 to 3/7 (halogenated copper phthalocyanine pigment/barbituric acid derivative yellow pigment); a colored pattern formed from the green curable composition; a color filter including the colored pattern; a solid-state image sensor including the color filter; and a method of producing the color filter.
US08765331B2 Reducing edge die reflectivity in extreme ultraviolet lithography
Extreme ultraviolet lithography (EUVL) masks and methods of manufacturing are provided. A method includes forming a sub-resolution phase shift grating in a multilayer reflective film beneath a border region of an absorber layer of an extreme ultraviolet lithography (EUVL) mask. The sub-resolution phase shift grating reduces a reflectivity of the border region of the mask.
US08765325B2 Solid oxide fuel cell and method for producing the same
An object of the present invention is to provide a fuel cell preventing formation of a diffusion layer containing Ca and other elements, and having an excellent power generation performance at low temperature by preventing breakdown of a crystal structure of an electrolyte by firing. Disclosed is a solid oxide fuel cell which includes an inner electrode, a solid electrolyte, and an outer electrode, each sequentially laminated on the surface of a porous support. The porous support contains forsterite, and has a Ca element content of 0.2 mass % or less in terms of CaO in a surface region at the inner electrode side.
US08765322B2 Fuel cell support structure and method of assembly/disassembly thereof
A fuel cell installation includes a support structure and a cell stack assembly that is removably insertable into the support structure from an uninstalled position to an installed position during an installation procedure. The cell stack assembly includes a fitting. An interfacing structure is mounted on one of the support structure in the cell stack assembly. The interfacing structure carries a connector that is configured to receive the fitting in interconnected relationship. At least one of the fitting and the connector floats in a plane relative to the support structure during the installation procedure. In operation, the fitting engages the connector when the cell stack assembly is inserted into the support structure. The fitting is repositioned relative to the connector to ensure that the fitting and connector are aligned with one another and connected upon installation.
US08765321B2 Transition metal nitride, separator for fuel cells, fuel cell stack, fuel cell vehicle, method of manufacturing transition metal nitride, and method of manufacturing separator for fuel cells
A transition metal nitride is obtained by a nitriding treatment of a surface of a base material including a transition metal or an alloy of the transition metal, and the transition metal nitride has a crystal structure of an M4N type and a crystal structure of an ε-M2˜3N type, and is formed over a whole area of the surface of the base material and continuously in a depth direction from the surface.
US08765320B2 External manifold for minimizing external leakage of reactant from cell stack
A fuel cell assembly (110, 210) has a plurality of fuel cell component elements (112) extending between a pair of end plates (114, 115) to form a stack (116), and plural reactant gas manifolds (120, 220; 122, 222; 124, 224; 126, 226) mounted externally of and surrounding the stack, in mutual, close sealing relationship to prevent leakage of reactant gas in the manifolds to the environment external to the manifolds. The reactant gas manifolds are configured and positioned to maximize sealing contact with smooth surfaces of the stack and the manifolds. One embodiment is configured for an oxidant reactant manifold (120, 124) to overlie the region where the fuel reactant manifold (122, 126) engages the stack. Another embodiment further subdivides an oxidant reactant manifold to include a liquid flow channel (270, 274), which liquid flow channel overlies the region where the fuel reactant manifold (122, 126) engages the stack.
US08765319B2 Method and device for operating a fuel cell system having a recirculation blower disposed in a fuel circuit of the fuel cell system
The invention relates to a method and a device for operating a fuel cell system (1) having a recirculation blower (11) disposed in a fuel circuit of the fuel cell system (1) by means of which the fuel (BS) exiting the fuel cell system (1) on the anode side is resupplied, said blower being driven by an air-driven drive turbine (12), wherein the air-driven drive turbine (12) is impacted by compressed air (vL).
US08765317B2 Fuel cell system
A fuel cell system has a fuel cell stack and a controller. The fuel cell stack is formed by stacking cells. The controller executes first cell voltage recovery processing when the cell voltage of a first cell group, placed at each end of the fuel cell stack, is below a first lower limit voltage threshold and executes second cell voltage recovery processing, which is different from the first cell voltage recovery processing, when the cell voltage of a second cell group, placed at substantially the center of the fuel cell stack, is below a second lower limit voltage threshold.
US08765315B2 Fuel cell system and method of controlling fuel cell system
Deterioration at the start-up and deterioration during the leaving period are suppressed in a good balance. As a system shutdown process, a controller (30) causes consumption of the air (oxygen) present in an oxidant electrode of a fuel cell stack (1) (oxygen consumption control). Further, after the termination of the oxygen consumption control, the controller (30) performs control to set a medium pressure hydrogen valve (13) and a hydrogen pressure adjustment valve (14) in a closed state. The controller (30) thereby causes hydrogen to be held in a passage located between the medium pressure hydrogen valve (13) and the hydrogen pressure adjustment valve (14). During a system shutdown period, a predetermined amount of hydrogen (medium pressure hydrogen) held in the hydrogen supply passage (L1) at a position between the medium pressure hydrogen valve (13) and the hydrogen pressure adjustment valve (14) can be supplied to the fuel electrode of the fuel cell stack (1) through a bypass passage (L2).
US08765314B2 Fuel cell system and method for stopping operation of fuel cell system
A fuel cell system includes a fuel cell; a fuel gas supplying unit supplying the fuel gas into the fuel cell on the anode side thereof; an oxidizing agent gas supplying unit supplying the oxidizing agent gas into the fuel cell on the cathode side thereof; a raw material gas supplying unit supplying the raw material gas into the fuel cell; and a controlling unit controlling the supply of the fuel gas, the oxidizing agent gas and the raw material gas. After switching the output of electric power or the fuel cell off, the fuel gas supplying unit suspends the supply of the fuel gas, the oxidizing agent gas supplying unit suspends the supply of the oxidizing agent gas and the raw material gas supplying unit supplies the raw material gas into the fuel cell to purge the fuel cell on the cathode side.
US08765310B2 Nonaqueous electrolytic solution and nonaqueous electrolyte secondary battery using the same
A nonaqueous electrolytic solution which may suppress the overcharge of a battery and a nonaqueous electrolyte secondary battery using the solution are provided. The overcharge of the battery is suppressed by undergoing the electrolytic polymerization in the solution when the battery is overcharged, and simultaneously more effectively suppressed by increasing the internal resistance of the battery. The nonaqueous electrolytic solution comprises a polymer which undergoes the electrolytic polymerization in the range of 4.3V or more to 5.5V or less at the lithium metal standard voltage, having a repeating unit represented by the formula (1), an electrolytic salt and a nonaqueous solvent. [where, A is a functional group which undergoes the electrolytic polymerization in the range of 4.3V or more to 5.5V or less at the lithium metal standard voltage, R and R′ are each independently an hydrogen atom or a methyl group]
US08765307B2 Stacked nonaqueous electrolyte battery, manufacturing method thereof and stacking apparatus therefor
A stacked nonaqueous electrolyte battery, a method of manufacturing the battery, and a stacking apparatus for the battery are provided. The stacked nonaqueous electrolyte battery includes a plurality of electrode bodies alternately stacked, each of the electrode bodies including an anode and a cathode laminated through a separator. The separator has a raised edge portion leading along an edge portion of one of the anode and the cathode, and the raised edge portions of the plurality of the separators overlap one another.
US08765305B2 Cathode active material for lithium secondary battery, process for preparing the same and reactor for use in the same process
The present invention relates to a cathode active material for a lithium secondary battery and a process for preparing the same. In accordance with the present invention, the cathode active material having a high packing density was designed and synthesized and thus provided is a cathode active material for a lithium secondary battery exhibiting structural stability such as improved characteristics for charge/discharge, service life and high-rate and thermal stability, by modifying surface of the electrode active material with amphoteric or basic compounds capable of neutralizing acid produced around the cathode active material.
US08765304B2 Non-aqueous electrolyte battery, battery pack, and vehicle
According to one embodiment, a non-aqueous electrolyte battery includes an outer case, a negative electrode, a positive electrode including a current collector and a positive electrode layer formed on surface of the current collector and opposed to the negative electrode layer, and a non-aqueous electrolyte, wherein the positive electrode layer includes a layered lithium nickel cobalt manganese composite oxide and a lithium cobalt composite oxide, the positive electrode layer has a pore volume with a pore diameter of 0.01 to 1.0 μm, the pore volume being 0.06 to 0.25 mL per 1 g of a weight of the positive electrode layer, and a pore surface area within the pore volume range is 2.4 to 8 m2/g.
US08765299B2 Electrode assembly and secondary battery including the same
An electrode assembly and a secondary battery including the electrode assembly are disclosed. The electrode assembly includes a first electrode, a second electrode, and a separator disposed between the first and second electrodes. A film is disposed on at least one edge of at least one of the first and second electrodes.
US08765294B2 Asymmetric type BF3 complex
A main object is to provide an asymmetric type BF3 complex which is useful as a solvent for a liquid electrolyte for electrochemical device, in which the liquid electrolyte has a wide potential window and is particularly excellent in oxidation resistance. To attain the object, an asymmetric type BF3 complex is represented by the following general formula (1): (in the general formula (1), each of R1 and R2 is an alkyl group having 1 to 6 carbon atoms and may be the same or different, and R1 and R2 may be branched or may form a ring).
US08765293B2 Electric storage device
Provided is an electric storage device that can ensure seal in a peripheral area of a portion in a defining wall of a case through which a rivet passes even when a rivet is inserted through the defining wall of the case and the rivet is caulked. The electric storage device includes: an electrode assembly; a case that houses the electrode assembly, the case including a defining wall; and a rivet, wherein a peripheral area of a portion in the defining wall through which the rivet passes has a higher hardness than the remaining area.
US08765290B2 Rechargeable battery with terminal junction and prong
A rechargeable battery 100 includes a plurality of electrode assemblies 10; a case 34 housing the electrode assemblies 10; at least one electrode terminal 21, 22, electrically connected to the electrode assemblies 10 by a lead tab 40, 50, the lead tab 50 including a terminal junction part 51; and a prong portion extending from the terminal junction plate, the prong portion comprising a plurality of prongs 53, 54, each of the prongs having a main body 53a electrically connected to one of the electrode assemblies 10 and an angled body 53b bent at one angle from the main body 53a.
US08765289B2 Power supply unit with bus bar module
A power supply unit includes: a plurality of batteries each of which has a positive electrode 8 at one end and a negative electrode at the other end; and a bus bar module connecting the batteries in series. The bus bar module includes: a plurality of bus bars each having a pair of connecting parts respectively connected to the electrodes adjacent to each other of the batteries adjacent to each other, and a coupling part coupling the pair of connecting parts to each other; a plurality of terminals each elastically clamping the electrodes and the connecting parts to electrically connect the electrodes to the connecting parts; and a plate to which the bus bars and the terminals are attached. The electrodes are formed in a flat plate shape, and thickness directions of the electrodes which are connected to each other by the bus bar are perpendicular to each other.
US08765286B2 Electrochemical device
An electrochemical device is disclosed. The device comprises a casing having a recess with an opening on a top face of the recess, a lid configured to block the recess of the casing so that the recess is watertight and airtight, a rechargeable and dischargeable storage element and an electrolytic solution enclosed in the recess, and a separate sheet interposed between the first and second electrode sheets, the separate sheet having a higher liquid absorption section interposed between the first and second electrode sheets, and a lower liquid absorption section continuously connected to the higher liquid absorption section, having a liquid absorption smaller than that of the higher liquid absorption section and extending outwardly with respect to the first and second electrode sheets. The lower liquid absorption section has a thickness greater than that of the higher liquid absorption section.
US08765284B2 Multi-cell battery
A flexible battery includes a first substrate layer with a first cell portion, a second cell portion, and a bridge portion connecting the first and second cell portions. An electrical bridge electrically couples a first electrochemical cell to a second electrochemical cell in series or parallel, and an electrical bridge is flexible and extends across the bridge portion of the first substrate layer. A second substrate layer is connected to the first substrate layer such that both of the first and second electrochemical cells are separately sealed. The flexible battery is configured to be folded over itself along the bridge portion such that the first and second electrochemical cells are arranged in a covering relationship. Optionally, an open gap area is disposed over the bridge portion of the first substrate to facilitate folding the flexible battery over itself along a line extending through the bridge portion.
US08765282B2 Battery assemblies
A battery module includes first, second, and third stacked battery cells, the second battery cell being arranged between the first battery cell and the third battery cell. The battery module further includes a first heat transfer layer arranged between the first battery cell and the second battery cell and a second heat transfer layer arranged between the second battery cell and the third battery cell. The battery module may further include a fluid conduit coupled to the first heat transfer layer and the second heat transfer layer.