专利检索_可变电阻传感器专利检索_可变电阻传感器专利检索查询

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序号	专利名	申请号	申请日	公开（公告）号	公开（公告）日	发明人
121	JPS4924683A -	JP6572672	1972-06-30	JPS4924683A	1974-03-05

122	JPS4875204A -	JP575372	1972-01-12	JPS4875204A	1973-10-11

123	JPS4316844Y1 -	JP10282867	1967-12-06	JPS4316844Y1	1968-07-12

124		UAU201606312	2016-06-10	UA112632U	2016-12-26
Пристрійдляпосиленняаудіотерапіїміститьгерметичнийкорпус, випромінювачвібрацій, підсилювачпотужності, акустичнийвхід, джереложивлення. Корпусвиконанийвидовженоюформоюз округлимикраями, невеликогорозмірупідвеличинулюдськоїдолоні, одночасноякі акустичнийвхід, іджереложивленнявикористанороз'єм TRS або USB, щозавдякидротуз'єднуєпристрійз персональнимикомп'ютерами, ноутбуками, планшетами, телефонамитаіншимимультимедійнимипристроями.
125	A device and method for determining the signal quality	DK96908056	1996-03-13	DK0815705T3	1999-06-21	BEERENDS JOHN GERARD

126	Device and method for determining the quality of an output signal.	ES96908056	1996-03-13	ES2125105T3	1999-02-16	BEERENDS JOHN GERARD
SE PROPORCIONA UN DISPOSITIVO PARA DETERMINAR LA CALIDAD DE UNA SEÑAL DE SALIDA QUE VA A SER GENERADA POR UN CIRCUITO DE PROCESADO DE SEÑAL CON RESPECTO A UNA SEÑAL DE REFERENCIA, CON UN PRIMER CIRCUITO EN SERIE PARA RECIBIR LA SEÑAL DE SALIDA Y CON UN SEGUNDO CIRCUITO EN SERIE PARA RECIBIR LA SEÑAL DE REFERENCIA, Y QUE GENERA UNA SEÑAL DE CALIDAD OBJETIVA POR MEDIO DE UN CIRCUITO DE COMBINACION ACOPLADO A LOS DOS CIRCUITOS EN SERIE. LA POBRE CORRELACION ENTRE DICHA SEÑAL DE CALIDAD OBJETIVA Y UNA SEÑAL DE CALIDAD SUBJETIVA VALORADA POR OBSERVADORES HUMANOS PUEDE SER MEJORADA CONSIDERABLEMENTE MEDIANTE REDUCCION, EN UN DISPOSITIVO DIFERENCIAL, PRESENTE EN EL CIRCUITO DE COMBINACION, PARA DETERMINAR LA DIFERENCIA ENTRE LAS DOS SEÑALES DE LOS CIRCUITOS EN SERIE, DICHA DIFERENCIA POR CIERTO VALOR, PREFERIBLEMENTE COMO UNA FUNCION DE UNA SEÑAL DE LOS CIRCUITOS EN SERIE, LA CORRELACION POBRE PUEDE SER MEJORADA MAS DISPONIENDO UN CIRCUITO DE ESCALAMIENTO ENTRE LOS DOS CIRCUITOS EN SERIE PARA ESCALAMIENTO DE AL MENOS UNA SEÑAL DEL CIRCUITO EN SERIE, AUN MAS, ES POSIBLE TAMBIEN ESCALAR LA SEÑAL DE CALIDAD COMO UNA FUNCION DE DICHO DISPOSITIVO DE ESCALAMIENTO.
127	Signal quality determining device and method	AU5144996	1996-03-13	AU5144996A	1996-10-02	BEERENDS JOHN GERARD

128	VIBRATING STRIP TRANSDUCER	CA615457	1989-09-29	CA1318724C	1993-06-01	CLEMENTS DAVID J
69344-79 There is described a vibrating strip transducer which comprises a body, having a substantially fixed mount; a thin metal strip attached to said fixed mount; a relatively movable mount attached to the opposite end of said strip, said movable mount adapted for mechanical interaction with an externally applied force; and an excitation means for exciting said strip into vibration at its resonant frequency and generating a frequency based signal output.
129	Acceleration or vibration sensing device	GB8622335	1986-09-17	GB2180655A	1987-04-01	DELL ORTO GIUSEPPE
An acceleration or vibration sensing device comprises a support structure for fixing to the body 1 the acceleration or vibrations of which it is desired to measure, and including a substrate 2 which is resiliently deformable through the effect of an acceleration of the body, at least one thick-film resistor 3 being applied to the substrate so that, in use, it undergoes deformations univocally corresponding to the deformations of the substrate, and circuit means (e.g. a bridge circuit) connected to the at least one resistor and arranged to output electrical signals indicative of the variations in its resistance. The substrate may be mounted in an air-tight or liquid-tight casing. A mass M1 may be fixed to the substrate.
130	Diaphragm microphone	FR8305609	1983-04-06	FR2525061B1	1986-12-26	FIDI WERNER; PRIBYL RICHARD; WOLF KONRAD

131	SEMICONDUCTOR TRANSDUCER AND METHOD OF MANUFACTURE	GB8213885	1982-05-13	GB2122027B	1986-02-05	GREENWOOD JOHN CHRISTOPHER

132		BR6500579	1985-05-08	BR6500579U	1985-07-16	PAVANI JOSE JUNIOR

133	Production of an electrically conducting molding and device comprising such molding	GB8418798	1984-07-24	GB2144406A	1985-03-06	KHANNA SARWAN KUMAR; LYONS ALAN MICHAEL; QUICK NATHANIEL RICHARD; ROBBINS MURRAY; TOWNSEND DEAN WILLIS; WILKINS CLETUS WALTER
This invention relates to a process for manufacturing an electrically conducting resin molding, e.g., for replacement of a metallic electrode in telephone receivers. The molding comprises carbon particles and a thermosetting resin, and an improvement in its fabrication involves a two-stage heat treatment resulting in desirably low electrical resistance, high physical strength and integrity, and low noise in electroacoustic use.
134	>Semiconductor transducer and method of manufacture	GB8213885	1982-05-13	GB2122027A	1984-01-04	GREENWOOD JOHN CHRISTOPHER
A strain or pressure transducer comprises, a movable element (14) supported in an opening in a body (11) by an isthmus (15) and restrained against excessive travel by a membrane (13) which couples the element to the body and a strain sensitive device 16, e.g. a piezo resistive sensor formed by doping, which responds to displacement of the movable element. The transducer may be formed by selective etching from a laminar body of a single crystal semiconductor. The transducer may form the active element of a telephone microphone.
135	Diaphragm microphone	FR8305609	1983-04-06	FR2525061A1	1983-10-14	FIDI WERNER; PRIBYL RICHARD; WOLF KONRAD
<P>DANS UNE MEMBRANE POUR MICROPHONE CONCU SELON LE PRINCIPE ELECTROSTATIQUE OU ELECTRODYNAMIQUE, A CARACTERISTIQUE DIMENSIONNELLE MARQUEE, EN PARTICULIER A CARACTERISTIQUE A CARDIOIDE, A SUPERCARDIOIDE, A HYPERCARDIOIDE, EN FORME DE HUIT OU AUTRE SEMBLABLE, MEMBRANE QUI, TENDUE PRESENTE UNE EPAISSEUR A 8MICRONS ET UN DIAMETRE MAXIMUM DE 10MM, LA MEMBRANE EST CONSTITUEE D'UN MATERIAU ELASTIQUE EXTENSIBLE A BASE CAOUTCHOUC ET PRESENTE UNE RESONANCE PROPRE MAXIMA DE 1200HZ A 1500HZ.</P>
136	Membrane for microphones	DE3312326	1983-04-06	DE3312326A1	1983-10-13	FIDI WERNER; PRIBYL RICHARD; WOLF KONRAD

137	DE2926805C2 -	DE2926805	1979-07-03	DE2926805C2	1983-08-04	DAHLBERG, REINHARD, DR.RER.NAT., 7101 FLEIN, DE
1. Semiconductor diode arrangement with a p/n transition produced by plastic deformation, said arrangement comprising an n-doped (1) and a p-doped (2) single-crystalline semiconductor disk, characterized in that both semiconductor disks (1 and 2) comprise on one of their sides a structure with parallel walls (3), in that both semiconductor disks are combined at their structured sides such that the walls cross and contact each other, and in that as a result of the crystal deformation occurring in the semiconductor grid all of the points of contact form p/n diodes which are electrically connected in parallel.
138		AT140282	1982-04-08	ATA140282A	1983-06-15	FIDI WERNER DIPL ING; PRIBYL RICHARD ING; WOLF KONRAD ING

139	MICROPHONE DIAPHRAGM	GB8308947	1983-03-31	GB8308947D0	1983-05-11

140	CDS SOLID STATE PHASE INSENSITIVE ULTRASONIC TRANSDUCER	CA332405	1979-07-24	CA1136260A	1982-11-23	HEYMAN JOSEPH S
Title: A Phase Insensitive Ultrasonic Transducer A phase insensitive ultrasonic transducer which includes a CdS crystal that is annealed for a selected period of time and at a selected temperature to provide substantially maximum acoustic attenuation at the operating frequency of the transducer. Two electrodes are attached to the crystal with amplifier means and a signal processing system connected to one of the electrodes to provide an ultrasonic receiver.

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