Monolithic gaas thin film solar battery
专利汇可以提供Monolithic gaas thin film solar battery专利检索，专利查询，专利分析的服务。并且PURPOSE: To realize the cost reduction for the solar battery by composing the solar battery with P-type GaAs layer, N-type GaAs layer and N-type AlXGa
1- XAs layer each, separating the solar battery into plural units with installation of N
+ -type region at the fixed region and also providing P
+ -type region to secure a serial connection.
CONSTITUTION: The solar battery is composed by giving the continuous epitaxial growth to P-type GaAs substrate 1 with N-type AlXGa
1- XAs layer 2, P-type GaAs layer 3, N-type GaAs layer 4 and N-type AlXGa
1- XAs layer 5 respectively. Then plural units of ohmic electrode 6 contianing a large amount of N-type impurity such as Ge or the like are provided in a belt formation at the fixed area on layer 5, and the impurity in electrode 6 is diffused through the heat treatment to form the isolation region composed of connected N
+ -type region 7a and 7b reaching layer 2. After this, P-type electrode 8 is formed also in a belt formation in connection to electrode 6 to form through the heat treatment the continuous P
+ -type region 9a and 9b reaching layer 3, and a serial connection is given to the isolated regions. Substrate 1 and layer 2 are then removed through etching, thus obtaining a monolithic thin film solar battery.
COPYRIGHT: (C)1979,JPO&Japio，下面是Monolithic gaas thin film solar battery专利的具体信息内容。
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