High frequency multi-resonator of trapped energy type
阅读：692发布：2023-03-24
专利汇可以提供High frequency multi-resonator of trapped energy type专利检索，专利查询，专利分析的服务。并且A high frequency piezoelectric multi-resonator of trapped energy type for use in an electric filter circuit comprises a thin wafer and two or more electrode units disposed on the wafer wherein a barrier for preventing vibrations from being transmitted from one of these electrode units to another through the wafer is provided for improving the spurious response characteristic of the multiresonator.，下面是High frequency multi-resonator of trapped energy type专利的具体信息内容。
1. A high-frequency multi-resonator of trapped energy type for use in an electric circuit comprising: a thin wafer of piezoelectric material; at least two spaced apart electrode units provided on said wafer; and a barrier formed in said wafer in the form of an elongated slot passing completely through said wafer and extending through an intermediate portion between said two electrode units so that a line from any position on one of said electrode units to any position on the other of said two electrode units is intersected by said slot, whereby a resonant interaction between said two electrode units during the operation of said multi-resonator can be reduced or substantially eliminated.
2. A high frequency multi-resonator as claimed in claim 1, wherein the width of said slot is approximately 0.5 mm.
3. A high frequency multi-resonator as claimed in claim 1, wherein said two electrode units are positioned on both sides of said slot in equally spaced relationship with respect to said slot.
4. A high-frequency multi-resonator as claimed in claim 1, wherein each electrode unit comprises a first circularly shaped electrode element disposed on one surface of said wafer and a second circularly shaped electrode element of the same diameter as said first element disposed opposite said first element on the other side of said wafer therefrom, said second element having a separating gap therein, so as to be formed of a pair of arcuate-shaped electrodes separated from each other on said other side of said first electrode element and wherein the length of the slot is greater than the diameter of any one of the electrode units.
5. A high frequency multi-resonator as claimed in claim 1, wherein the minimum distance between one of the electrode units to one of the lengthwise edges of the slot adjacent to said one of said electrode units is such thAt a ratio of the thickness of the wafer to said minimum distance is preferably more than 10.
6. A high frequency multi-resonator as claimed in claim 1, wherein the number of said slots is more than two.
7. A high frequency multi-resonator as claimed in claim 1, wherein said slot is formed by the use of a cutting machine having a rotary disc of the thickness substantially equal to the width of said barrier.
8. A high frequency multi-resonator as claimed in claim 5, wherein said wafer is made of ceramic material.
9. A high frequency multi-resonator according to claim 1, wherein said slot is an elongated slot extends from one edge of said wafer to a portion thereof separated from said one edge and adjacent a second edge opposite said one edge.
10. A high frequency multi-resonator as claimed in claim 1, wherein said slot extends between portions of said wafer adjacent the opposed edges thereof.
11. A high frequency multi-resonator as claimed in claim 1, wherein said electrode units are circularly shaped and said slot is elongated and has a length greater than the diameter of an electrode unit.
12. A high frequency multi-resonator as claimed in claim 1, wherein said slot is in the form of a ring-shaped opening.
13. A high frquency multi-resonator as claimed in claim 1, wherein said wafer is circularly shaped.
14. A high frequency multi-resonator as claimed in claim 13, wherein said electrode units are circularly shaped.
15. A high-frequency multi-resonator as claimed in claim 4, further including first electrical conductive means disposed on said one surface of said wafer for electrically connecting said first circularly shaped electrode elements together and second electrical conductive means disposed on said other surface of said wafer for electrically connecting the electrodes of said pairs making up said second electrode elements which are arranged opposite each other on either side of said slot.
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