Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To reduce leakage current flowed between two elements by forming a semiconductor layer on a semi-insulating substrate, forming a photodiode and a MISFET on the semiconductor layer while contaiing it, forming an element separating region therebetween, and removing the semiconductor layer thereon. CONSTITUTION:An N type InP layer 14, a P type In0.53Ga0.47As layer 15 and an N type InP layer 16 are laminated on a semi-insulating InP substrate 11, grown in a vapor phase, and mesa etched to form a PIN photodiode 13 on one end of the substrate 11. Then, Zn is diffused through the remaining layer 14 to form an element separating P type region 25 in the substrate 1. Thereafter, MISFET elements 12 are formed on a region opposed to the photodiode 13 at both sides of the region 25, the layer 14 on the region 25 is removed, an SiO2 film 19 is coated thereon, and electrodes 20, 22 are coated on the end of the layer 14 and the elements 12. Thus, the current flowed from the electrode 20 to the electrode 22 is interrupted by the region 25 to increase the input resistance of the elements 12.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| X射线和伽玛射线光电二极管 | 2020-05-11 | 220 |
| 一种集成锁定支路的平衡零拍探测器 | 2020-05-12 | 92 |
| 一种偏振无关光场重建与码间干扰补偿系统与方法 | 2020-05-12 | 914 |
| 一种双级级联低噪声掺铒光纤放大器光学系统 | 2020-05-11 | 781 |
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