专利汇可以提供Bias voltage generating circuit of avalanche photodiode专利检索,专利查询,专利分析的服务。并且PURPOSE: To use APD as a light receiving element for light communication transmission device by securing a temperature compensation for amplification degree of an avalanche photodiode (APD) and a breakdown voltage temperature dependence characteristic compensation.
CONSTITUTION: A normal pn-junction semiconductor element 20 is provided in a circuit to generate bias voltage with which to set an actuating point of avalanche photodiode (APD), a voltage working on both ends of the element 20 is applied to input terminals 21, 22 of a DC amplifier 23, and a terminal voltage of the element 20 is amlified by a given multiplying factor to output a temperature compensating voltage. The temperature compensating voltage from the amplifier 23 is applied to an input end 24 of a DC boosting circuit 26, and an optimal bias voltage is supplied to APD working as a load by means of a reference setting voltage applied to an input end 25. From availability that the terminal voltage of the element 20 changes linearly against temperature change, the multiplying factor for the amplifier 23 and the boosting ratio of the circuit 26 are set at given values, and a temperature compensation for the amplification degree of APD and a breakdown voltage temperature dependence characteristic-compensation are securely carried out.
COPYRIGHT: (C)1980,JPO&Japio,下面是Bias voltage generating circuit of avalanche photodiode专利的具体信息内容。
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