专利汇可以提供Semiconductor light detector专利检索,专利查询,专利分析的服务。并且PURPOSE: To increase a light detecting output and raise a responsive speed more higher by improving the characteristic of a semiconductor layer in each semiconductor region.
CONSTITUTION: An n-type semiconductor layer 2 is formed on an n-type semiconductor layer 1, p-type semiconductor regions 3 and 4 in the layer 2 keeping a predetermined distance from the layer 1 and n-type semiconductor regions 5 and 6 are formed in the layers 3 and 4 in the opposite side of the layer 1, and terminals 7 and 8 are provided in the layer 1 and region 6. A PIN photodiode H having the layer 1 for the N layer, the layer 2 for the I layer and the region 3 for the P layer is formed to form NPN transistors T
1 and T
2 by the layers 1 and 2, the regions 4 and 6 and the regions 3 and 5, and the region 5 is connected by a wiring 9 to the region 4. A specific resistance on the layer 2 is selectively set greater than the layer 1 and region 3, a thickness D of a region 3F is selectively set greater than the characteristic collecting wavelength of the layer 2 to the light L incident to the layer 2, the impurity for compensating a carrier density is introduced to the layer 2, and the increasing of the detecting output and the responsive speed can be materialized.
COPYRIGHT: (C)1980,JPO&Japio,下面是Semiconductor light detector专利的具体信息内容。
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