Avalnche photo diode with semiconductor hetero construction
专利汇可以提供Avalnche photo diode with semiconductor hetero construction专利检索，专利查询，专利分析的服务。并且PURPOSE: To raise efficiency and reduce noise by making up the avalanche region and photo absorption region of different materials respectively.
CONSTITUTION: In the composite semiconductors comprising 2 to 4 elements, if they may be differed in their composition from the others, being very frequently coinsident with each other in their grid constant. An avalanche photo diode can be obtained when the materials having a similar grid constant may be used, the materials with a high gain and optimum for a low noise operation are selected for an avalanche region and the material having a highest quantum efficiency for the utilizing wavelengths is used for light absorption region. For example, type n
- or i InP9, P or P
+ -type In
0.53 Ga
0.47 As10 is laminated by continuous liquid phase epitaxial on a n
+ -type InP substrate 8 to make a hetero construction substrate. A circumfernce surrender is prevented with a mesa etching, the pn junction is reverse-biased by providing an electrode. In this device, because In
0.53 Ga
0.47 As are used for the light absorption region, the complete grid matching can be obtained and the light upto about 1.7μm be detected.
COPYRIGHT: (C)1980,JPO&Japio，下面是Avalnche photo diode with semiconductor hetero construction专利的具体信息内容。
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