Insulated-gate bipolar transistor
专利汇可以提供Insulated-gate bipolar transistor专利检索，专利查询，专利分析的服务。并且PURPOSE:To adjust the trade-off relation between latching current and ON voltage, by making a first electrode come into contact with a first region, making a second electrode come into contact with both a third region and a forth region, and specifying the width and the dosage of the third region sandwiched between a second region and the forth region. CONSTITUTION:On an N substrate 1 of a first region, is formed a low impurity concentration P layer 2 as a second region, on the surface of which an N-layer 3 of a third region is selectively formed. On the surface of the N-layer, a P layer 4 of a forth region is selectively formed. A surface region of the N-layer 3 sandwiched between the P layer 2 and the P layer 4 is made a channel region, and thereon a gate electrode 6 is formed, via a gate insulating film 5. A source electrode 7 is brought into contact with a deep N layer 9 formed on the far side from the date electrode 6 of the N-layer 3 and the P layer 4, in such a manner as to bridge them. A drain electrode 8 is brought into contact with the N layer 1. The width (w) of the channel region 3 is 2-8mum, and the dosage of ion implantation to turn the channel region 3 into an N-pole is 1X10 -4X10 /cm . The main carrier is electron, and the latching limit current is doubled or more as compared with prior ones.，下面是Insulated-gate bipolar transistor专利的具体信息内容。
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