Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To improve the reliability of a semiconductor by forming a Schottky junction electrode on the surface of a board, forming a radiation sensitive polymer on its surface, and forming an ohmic junction electrode on the surface of another board thereby to monitor the semiconductor at a position close thereto.
CONSTITUTION: When a reference light beam is projected onto a semitransparent metal film 22 through a radiation sensitive polymer 19, a photoelectromotive force is generated at a Schottky junction formed between the film 22 and an N-type silicon base region 15 and a photoelectric current I
0 flows from an electrode 23 to a latticelike electrode 20. When radiant rays 1 are radiated on a part of the Schottky junction formed integrally with this insulating gate bipolar transistor IGBT, the absorptivity of the polymer 19 increases due to the chemical reaction of the radiation sensitive polymer 19. When the photoelectric current I
1 is measured again by projecting the reference light beam after the radiant rays 1 have been radiated, I
1 decreases more as the absorptivity increases at a higher rate and (I
0 -I
1 )/I
0 nears zero. Accordingly, the amount of radiation R can be measured by measuring the calibration curve with the radiant rays 1 backscattered in advance.
COPYRIGHT: (C)1990,JPO&Japio，下面是Semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种低损耗模块化多电平直流直流变换器及其子模块 | 2020-05-08 | 273 |
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| 车辆用逆变器系统 | 2020-05-11 | 914 |
| 电压转换器臂 | 2020-05-12 | 970 |
| 用于线圈的软关断的电路和方法 | 2020-05-12 | 818 |
| 一种放电装置及储能器件放电系统 | 2020-05-11 | 421 |
| 主体形貌顶部圆角刻蚀方法 | 2020-05-08 | 909 |
| 电池管家 | 2020-05-12 | 155 |
| 一种沟槽型绝缘栅双极晶体管及其制备方法 | 2020-05-11 | 214 |
| 具有加强结构的边缘终端装置 | 2020-05-08 | 527 |
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