Insulated-gate bipolar transistor
专利汇可以提供Insulated-gate bipolar transistor专利检索，专利查询，专利分析的服务。并且PURPOSE: To suppress the operation of a parasitic transistor and to prevent the occurrence of latch-up, by connecting a voltage bias circuit means between the source of a field effect transistor and the collector layer of a bipolar transistor, and leading out a control terminal and a pair of main terminals.
CONSTITUTION: When a bipolar transistor 32 is conducted, a voltage that is generated across an equivalent resistor 34 is applied between the base and the emitter of a parasitic transistor 33. This phenomenon causes the occurrence of latch-up. To prevent the occurrence of the latch-up, a bias circuit means 40 is connected between a collector (c) of a bipolar transistor block 32 on the output side of the equivalent resistor 34 and a source (s) of a field effect transistor 31. As the bias circuit means 40, a diode 41, a resistor 42 or a circuit wherein both parts are connected in parallel is used.
COPYRIGHT: (C)1989,JPO&Japio，下面是Insulated-gate bipolar transistor专利的具体信息内容。
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