Insulated-gate bipolar transistor
专利汇可以提供Insulated-gate bipolar transistor专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent an element itself from becoming a latching state by laminating a resistance layer on the opposite contact face of a source electrode. CONSTITUTION:After a base layer 3 and a source electrode 8 in contact with a source layer 4 are formed, a resistance layer 10 is formed thereon. The resistance layer is formed, for example, of a polycrystalline silicon having 1-2mum of thickness, and its impurity concentration is so regulated as to approx. 5-50mOMEGA of resistance value. Further, a metal electrode 11 is laminated on the layer 10 to connect it to a source terminal S. When a current of 100Angstrom flows to this insulated gate type bipolar transistor, a voltage drop between both side faces of the layer 10 becomes 0.5-5V. Since the layer 10 is contained also in a gate circuit, a voltage between a gate and a source is reduced by 0.5-5V thereby to suppress a gate voltage, thereby limiting a current. Thus, a voltage drop due to a lateral resistance under the layer 4 becomes small, thereby reducing a danger of latching.，下面是Insulated-gate bipolar transistor专利的具体信息内容。
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