专利汇可以提供Insulated gate bipolar transistor专利检索,专利查询,专利分析的服务。并且An insulated gate bipolar transistor (IGBT) permits a large current to uniformly flow. A plurality of single crystal island regions (61) are formed in a supporting substrate (2) using dielectric films (1). Formed in each of the island regions are an n⁻ first region (61), a p second region (41) within the first region, an n⁺ third region (32) within the second region (41) and a p⁺⁺ fourth region (11) between the first region (61) and the dielectric film. All of these regions are exposed to the surface of the island region. Formed on the surface of the island region are a first main electrode (E) kept in ohmic contact with the second (41) and third (32) regions, a second main electrode (C) kept in ohmic contact with the fourth region (11) and a control electrode (G) located on the second (41) and third region (32) through an insulator (6).,下面是Insulated gate bipolar transistor专利的具体信息内容。
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