Stripline radiation detection apparatus专利检索-平带电位微电子学专利检索查询-专利查询网

Stripline radiation detection apparatus

阅读：159发布：2023-04-11

专利汇可以提供Stripline radiation detection apparatus专利检索，专利查询，专利分析的服务。并且A sheet of semiconductor material on the opposite planar sides of which a plurality of spaced apart, parallel stripline electrodes are disposed. The electrodes are offset with respect to each other by a predetermined angle, and the resistance of the semiconductor material and the potential applied to the electrodes are selected so that the depth of the field zone created is equal approximately to the distance between the oppositely disposed electrodes at their crosswise points of intersection. The electrodes on the upper side of the sheet are spaced apart by a distance equal to at least twice the combined thickness of the sheet of semiconductor material and the electrodes.，下面是Stripline radiation detection apparatus专利的具体信息内容。

权利要求

1. An apparatus for detecting ionizing radiation, comprising: a planar sheet of semiconductor material; and a plurality of stripline electrodes disposed on opposite planar surfaces of said sheet and offset from each other by a predeTermined angle, said electrodes on one of said sheet surfaces being spaced apart by a distance which is at least equal to twice the thickness of the sheet of semiconductor material and said electrodes on both of said surfaces in combination, the length of said sheet and said semiconductor material being chosen so as to provide a predetermined electrical resistance which, in response to a selected voltage applied to said electrodes, creates a field zone of a depth equal approximately to the distance between oppositely disposed electrodes at their planar crosswise points of intersection.

2. The apparatus as recited in claim 1, wherein said electrodes comprise metallic material vapor deposited on said semiconductor material.

3. The apparatus as recited in claim 1, wherein said electrodes comprise doped metallic material diffused into said semiconductor material.

4. The apparatus as recited in claim 1, wherein said electrodes comprise metallic material which is ion implanted into said semiconductor material.

5. The apparatus as recited in claim 1, wherein said electrodes are offset with respect to each other on said sides of said sheet by an angle of approximately 90*.

6. The apparatus as recited in claim 1, wherein said ratio of the spacing of the electrode strips on said one side of said sheet to the combined thickness of the sheet and electrodes is at least 5:1.

7. The apparatus as recited in claim 1, wherein the surface of said sheet is coated between said electrodes on said one side thereof with a layer of oxidized material.

8. The apparatus as recited in claim 7, wherein said layer of oxidized material comprises silicon dioxide.

9. The apparatus as recited in claim 1, wherein the surfaces of said electrodes are coated with a layer of oxidized material.

10. The apparatus as recited in claim 9, wherein said layer of oxidized material comprises silicon dioxide.

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