专利汇可以提供Method of performing a surface treatment respectively on the via and the trench in a dual damascene process专利检索,专利查询,专利分析的服务。并且The present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process by the plasma having the inclined angle. The residual and/or the metal surface oxide on the bottom of the via are removed in the via and the trench etching process, and the surface treatment is performed on the surface of the trench, thereby preventing the poor electrical and increasing the adhesive force between the surface of the trench and the barrier metal layer, resulting in solving the disadvantage which the surface treatment can not be respectively performed and the trench according to the prior art.,下面是Method of performing a surface treatment respectively on the via and the trench in a dual damascene process专利的具体信息内容。
What is claimed is:
1. Field of the Invention
The present invention relates to a surface treatment method of the dual damascene process, more particularly, to a method of performing a surface treatment respectively on the via and the trench in a dual damascene process.
2. Description of the Prior Art
In the dual damascene process, when completed the via and the trench etching process, a surface treatment process is needed to be perform, in order to remove the residual and/or the metal surface oxide in the via and to increase the adhesive force between the barrier layer and the intermetal dielectric layer.
In the current technology, there are two method of performing the surface treatment. One is an isotropic plasma, as shown in
In view of the above problems, the present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process.
The present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process, which the surface treatment is respectively performed on the bottom of the via and the surface of the trench based on the different requirements of the surface status of the via and the trench.
The present invention also provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process, which discloses a method of performing the surface treatment on the via and the trench in a dual damascene process by using the plasma having the inclined angle, because the inclined angle of the plasma is adjusted based on the ratio of the via and the trench, thereby providing a more free surface treatment method.
The present invention also provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process, thereby obtaining the better status of the via bottom and the trench surface.
To achieve the aforementioned objects and more, a preferred embodiment of the present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process, comprising: providing a semiconductor substrate having integrated circuits, forming a metal layer, an intermetal dielectric layer thereon sequentially, and wherein a via and a trench are sequentially formed on the intermetal dielectric layer; performing a first plasma surface treatment on a bottom of the via; and performing a second plasma surface treatment on a surface of the trench, and a forward direction of an ion beam is at an angle to the normal of the bottom of the via while performing the second surface treatment.
These and other objectives of the present invention will become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings,
The present invention provides a method of performing a pre-separated treatment respectively on the via and the trench in a dual damascene process. As shown in
Next, the value of a specific angle θ0, which is obtained by tan θ0=a/b, is obtained by the value a and b. As shown in
Next, a process recipe is set. First, the process recipe is set based on the requirement of the bottom of the via 18. A first plasma surface treatment is then performed on the wafer. The process recipe is set based the requirement of the surface of the trench 20. A second plasma surface treatment is then performed on the wafer.
When the surface treatment is performed on the bottom of the via and the surface of the trench according to the present invention, a surface treatment is performed on the bottom of the via 18 first. The surface treatment is performed by using the one-way or same-way plasma based on the process requirement. As shown in
Additional, based on the requirement of the surface of the trench 20, as shown in
By controlling the magnetic force magnitude of the emitting electromagnetism 22 and operating the electromagnetism, a deflection angle generated by the gas ion plasma 26 is determined after the dissociation, thereby enlarging the probability of the treated wafer surface subjected by using the plasma to perform a surface treatment by using the plasma beam having the inclined angle. Therefore, the present invention also applies on the other surface treatment which requires the plasma.
The embodiment above is only intended to illustrate the present invention; it does not, however, to limit the present invention to the specific embodiment. Accordingly, various modifications and changes may be made without departing from the spirit and scope of the present invention as described in the following claims.
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