Manufacturing method for semiconductor device
专利汇可以提供Manufacturing method for semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To improve a device characteristic with an absorption due to a multi- cyrstal of a lamination failure produced in manufacture of the device and a displacement by mounting a multi-crystal Si layer containing P,B,As and others on the back face of a substrate in preparing the IC on the surface of the Si single crystal substrate.
CONSTITUTION: A protective SiO
2 2 film 7 is mounted by a low temperature chemical accummulation process on the both surface of a Si single crystal substrate 1 and a film 7 on the back face is removed by a photolitho graphy. Successively, a multi-crystal Si layer 8 containing a high density of B,P,As and others is formed on the back face or a multi-crystal Si layer 8 containing no impurity is accummulated to dope those impurityes. Thereafter, the film 7 and multi crystal layer 8 sticked to the surface of the substrate are removed to make a MOS diode by a conventional process. This method is characterized in that a crystal particle field held by the multi-crystal Si and the grid disorder due to the impurity element serve to absorb a heavy metal impurity element.
COPYRIGHT: (C)1980,JPO&Japio，下面是Manufacturing method for semiconductor device专利的具体信息内容。
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