Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To increase the working efficiency for the manufacture the semiconductor device by providing the ferromagnetic substance layer to the whole or part of the semiconductor wafer surface and placeing and fixing the wafer on the wafer cutting device featuring the magnetic force to suck the ferromagnetic substance layer to perform the cutting process.
CONSTITUTION: N-type GaAsP layer 4 is epitaxial-grown on N-type GaAS substrate 5, and the P-type impurity is diffused with Si
3 N
4 film 2 used as the mask to form P-type region 3. Thus, the PN-junction is produced. Then AlP side electrode 1 is attached, and AuGe layer 6 functioning as the N-side electrode, Ni layer 7 (ferromagnetic material) and Au layer 8 are coated in lamination to the back of substrate 5. On the other hand, electromagnet 15 is provided under stage 14 of the dicing saw onto which diode 12 thus formed is placed, and diode 12 sticked to adhesive tape 13 of a low adhesion force is placed on stage 14 with Ni layer 7 set downward. After this, electromagnet 15 is made to conduct to suck and adhere diode 12 and then cut by the dicing saw blade in the X and Y directions
COPYRIGHT: (C)1979,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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