Crystal growth method
专利汇可以提供Crystal growth method专利检索，专利查询，专利分析的服务。并且PURPOSE: To improve the accuracy of temperature measurement of a substrate and improve the property of a crystal, by growing a crystal film after forming a film of the same material on a substrate surface which is the opposite surface for crystal growth.
CONSTITUTION: A film of the same material with a crystal film to be grown is formed on a substrate surface which is the opposite surface for crystal growth on a sapphire substrate being a single crystal insulating substrate, and after that the crystal film is grown. That is, a silicon layer 2 is vapor-deposited on the back surface of the substrate 1 by an electron beam heating deposition method, and after that the layer is heated by a heater 3 which uses contact radiation. Thus, radiation energy is reflected by the silicon layer 2 formed on the back surface in the state where a single crystal silicon film is not yet grown on the surface of the substrate 1. When the single crystal silicon film is grown on the surface of the substrate 1 after the above state, the reflecting state of radiation energy scarcely changes. Accordingly, the temperature measurement by a therocouple 4 can be performed always in a stable condition, and the measured value approximate to the practical temperature of the substrate can be obtained.
COPYRIGHT: (C)1987,JPO&Japio，下面是Crystal growth method专利的具体信息内容。
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