专利汇可以提供Semiconductor diode laser array device专利检索,专利查询,专利分析的服务。并且PURPOSE: To obtain a diode laser array which radiates large-output light energy with a narrow beam by making the longitudinal and transversal dimensions of a structure which emits coherent light from the surface much larger than the wavelength of the emitted light.
CONSTITUTION: An active layer 3 held between GaAlAs waveguide layers 8 and 9 is provided on a GaAlAs substrate 1 attached to a heat sink 2 and most of a diffraction grating coupler 4 is formed in the layer 9. On the projecting sections of a waveguide 6, GaAlAs 11 is deposited and covered with metallic layers 12. At the ends of a diffraction grating, metallic layers 12 are provided through an insulating layer 13 and conductors 14 bridge the layers 12. The wavy bottom surfaces of the grooves of the grating 4 are alternately coated with films 16 having larger reflectivity and films 17 having smaller reflectivity and the pitch of the grating 4 is made smaller than the wavelength of light in the material, matched to the light mode of 45° from the normal line, and intensifies only one ray of light of transverse mode. When a Bragg reflector is provided below the active layer 3, a surface light beam is directly emitted from the surface of the grating 4 and a beam reflected by the Bragg reflector is refracted on the surface and advances in parallel with the surface beam. When a laser array is constituted in such a way, a large output can be obtained with a narrow beam.
COPYRIGHT: (C)1989,JPO,下面是Semiconductor diode laser array device专利的具体信息内容。
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